SMF15C [ONSEMI]
5-Line Transient Voltage Suppressor Array; 5 ,线路瞬态电压抑制器阵列型号: | SMF15C |
厂家: | ONSEMI |
描述: | 5-Line Transient Voltage Suppressor Array |
文件: | 总4页 (文件大小:49K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMF05C, SMF12C, SMF15C,
SMF24C
5−Line Transient Voltage
Suppressor Array
This 5−line voltage transient suppressor array is designed for
application requiring transient voltage protection capability. It is
intended for use in over−transient voltage and ESD sensitive
equipment such as computers, printers, automotive electronics,
networking communication and other applications. This device
features a monolithic common anode design which protects five
independent lines in a single SC−88 package.
http://onsemi.com
SC−88 FIVE TRANSIENT
VOLTAGE SUPPRESSOR
100 W PEAK POWER
MARKING DIAGRAM
Features
• Protects up to 5−Line in a Single SC−88 Package
• Peak Power Dissipation − 100 W (8 x 20 ms Waveform)
• ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model
and Class C (Exceeding 400 V) per Machine Model.
SC−88
CASE 419B
STYLE 24
DEVM
1
• Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8 kV (Contact)
• Flammability Rating of UL 94 V−0
• Pb−Free Package is Available
6J
6K
6L
6M
M
= SMF05C
= SMF12C
= SMF15C
= SMF24C
= Date Code
Applications
• Hand−Held Portable Applications
• Networking and Telecom
• Automotive Electronics
• Serial and Parallel Ports
• Notebooks, Desktops, Servers
PIN ASSIGNMENT
PIN1. CATHODE
1
2
3
6
5
4
2. ANODE
3 CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
MAXIMUM RATINGS (T =25°C unless otherwise specified)
J
Symbol
Rating
Value
Unit
P
PK
1
Peak Power Dissipation
100
W
ORDERING INFORMATION
8 x 20 ms Double Exponential Waveform
(Note 1)
†
Device
Package
SC−88
Shipping
TJ
Operating Junction Temperature Range
Storage Temperature Range
−40 to 125
−55 to 150
260
°C
°C
°C
V
SMF05CT1
SMF05CT2*
SMF05CT2G*
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
T
STG
SC−88
T
L
Lead Solder Temperature (10 s)
SC−88
(Pb−Free)
ESD
Human Body Model (HBM)
Machine Model (MM)
IEC 61000−4−2 Air (ESD)
IEC 61000−4−2 Contact (ESD)
16000
400
15000
15000
SMF12CT1
SC−88
3000/Tape & Reel
SMF15CT1
SMF24CT1
SC−88
SC−88
3000/Tape & Reel
3000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Nonrepetitive current pulse per Figure 3.
*The “T2” suffix refers to an alternate tape & reel
orientation.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
June, 2004 − Rev. 1
SMF05C/D
SMF05C, SMF12C, SMF15C, SMF24C
SMF05C ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
Conditions
Min
Typ
Max
5.0
Unit
V
V
RWM
(Note 2)
I = 1 mA, (Note 3)
V
BR
6.2
7.2
V
T
Reverse Leakage Current
Clamping Voltage
I
V
= 5 V
0.07
5.0
mA
V
R
RWM
V
I
PP
I
PP
= 5 A (8 x 20 ms Waveform)
= 8 A (8 x 20 ms Waveform)
9.8
C
C
Clamping Voltage
V
12.5
8.0
V
Maximum Peak Pulse Current
Capacitance
I
PP
8 x 20 ms Waveform
= 0 V, f = 1 MHz (Line to GND)
A
C
V
R
80
130
pF
J
SMF12C ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
Conditions
Min
Typ
0.01
Max
12
Unit
V
V
RWM
(Note 2)
I = 1 mA, (Note 3)
V
BR
13.3
15
V
T
Reverse Leakage Current
Clamping Voltage
I
R
V
RWM
= 12 V
1.0
21
mA
V
V
C
I
PP
I
PP
= 3 A (8 x 20 ms Waveform)
= 6 A (8 x 20 ms Waveform)
Clamping Voltage
V
C
23
V
Maximum Peak Pulse Current
Capacitance
I
8 x 20 ms Waveform
= 0 V, f = 1 MHz (Line to GND)
6.0
60
A
PP
C
V
R
40
pF
J
SMF15C ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise specified)
J
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
Conditions
Min
Typ
0.01
Max
15
Unit
V
V
RWM
(Note 2)
I = 1 mA, (Note 3)
V
BR
17
19
V
T
Reverse Leakage Current
Clamping Voltage
I
R
V
RWM
= 15 V
1.0
23
mA
V
V
I
PP
I
PP
= 1 A (8 x 20 ms Waveform)
= 5 A (8 x 20 ms Waveform)
C
C
Clamping Voltage
V
29
V
Maximum Peak Pulse Current
Capacitance
I
8 x 20 ms Waveform
= 0 V, f = 1 MHz (Line to GND)
5.0
45
A
PP
C
V
R
33
pF
J
SMF24C ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise specified)
J
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
Conditions
Min
Typ
0.01
Max
24
Unit
V
V
RWM
(Note 2)
I = 1 mA, (Note 3)
V
BR
26.7
32
V
T
Reverse Leakage Current
Clamping Voltage
I
R
V
RWM
= 24 V
1.0
40
mA
V
V
I
= 1 A (8 x 20 ms Waveform)
= 2.5 A (8 x 20 ms Waveform)
C
C
PP
PP
Clamping Voltage
V
I
44
V
Maximum Peak Pulse Current
Capacitance
I
8 x 20 ms Waveform
= 0 V, f = 1 MHz (Line to GND)
2.5
25
A
PP
C
V
R
21
pF
J
2. TVS devices are normally selected according to the working peak reverse voltage (V
or continuous peak operating voltage level.
), which should be equal or greater than the DC
RWM
3. V is measured at pulse test current I .
BR
T
http://onsemi.com
2
SMF05C, SMF12C, SMF15C, SMF24C
TYPICAL PERFORMANCE CURVES
(T = 25°C unless otherwise specified)
J
100
90
80
70
60
50
40
30
20
10
0
100
t
r
PEAK VALUE I
@ 8 ms
RSM
90
80
70
60
50
40
30
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
P
HALF VALUE I
/2 @ 20 ms
RSM
t
P
20
10
0
0
25
50
75
100
125
150
175
200
0
20
40
t, TIME (ms)
60
80
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Pulse Derating Curve
Figure 2. 8 × 20 ms Pulse Waveform
100
10
1
100
SMF24C
SMF05C
SMF15C
SMF12C
SMF12C
SMF15C
SMF05C
SMF24C
10
1
0
5
10
15
0
5
10
15
20
25
I , PEAK PULSE CURRENT (A)
PP
V
BR
, REVERSE VOLTAGE (V)
Figure 3. Clamping Voltage vs Peak Pulse Current
Figure 4. Junction Capacitance vs Reverse Voltage
http://onsemi.com
3
SMF05C, SMF12C, SMF15C, SMF24C
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE 02U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
A
G
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
A
B
C
D
G
H
J
K
N
S
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
6
1
5
4
3
S
−B−
0.65 BSC
−−−
0.10
0.10
0.10
0.25
0.30
2
0.20 REF
0.079 0.087
2.00
2.20
D 6 PL
STYLE 24:
PIN 1. CATHODE
2. ANODE
M
M
B
0.2 (0.008)
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
N
J
C
H
K
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
SMF05C/D
相关型号:
SMF15C-LF-T13
Trans Voltage Suppressor Diode, 100W, 15V V(RWM), Bidirectional, 5 Element, Silicon, ROHS AND REACH COMPLIANT, PLASTIC, SC-70, 6 PIN
PROTEC
SMF15C-LF-T7
Trans Voltage Suppressor Diode, 100W, 15V V(RWM), Bidirectional, 5 Element, Silicon, ROHS AND REACH COMPLIANT, PLASTIC, SC-70, 6 PIN
PROTEC
SMF15C-T13
Trans Voltage Suppressor Diode, 100W, 15V V(RWM), Bidirectional, 5 Element, Silicon, PLASTIC, SC-70, 6 PIN
PROTEC
SMF15CA
Trans Voltage Suppressor Diode, 1000W, 15V V(RWM), Bidirectional, 1 Element, Silicon, SMF, 2 PIN
DIOTEC
SMF15CA-T1
Trans Voltage Suppressor Diode, 1000W, 15V V(RWM), Bidirectional, 1 Element, Silicon,
WTE
SMF15CA-T1-LF
Trans Voltage Suppressor Diode, 1000W, 15V V(RWM), Bidirectional, 1 Element, Silicon,
WTE
©2020 ICPDF网 联系我们和版权申明