SMF22AT1 [ONSEMI]
1000W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 498-01, SOD-123FL, 2 PIN;型号: | SMF22AT1 |
厂家: | ONSEMI |
描述: | 1000W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 498-01, SOD-123FL, 2 PIN 光电二极管 电视 |
文件: | 总8页 (文件大小:60K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMF5.0AT1 Series
Zener Transient
Voltage Suppressor
SOD−123 Flat Lead Package
The SMF5.0A Series is designed to protect voltage sensitive
components from high voltage, high energy transients. Excellent
clamping capability, high surge capability, low zener impedance and
fast response time. Because of its small size, it is ideal for use in
cellular phones, portable devices, business machines, power supplies
and many other industrial/consumer applications.
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PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
5 - 170 VOLTS
Specification Features:
• Stand-off Voltage: 5 - 170 Volts
200 WATT PEAK POWER
• Peak Power - 200 Watts @ 1 ms (SMF5.0A - SMF58A)
Peak Power - 175 Watts @ 1 ms (SMF60A - SMF170A)
• Maximum Clamp Voltage @ Peak Pulse Current
1
2
• Low Leakage
• Response Time is Typically < 1 ns
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
IEC61000-4-2 Level 4 ESD Protection
1: CATHODE
2: ANODE
IEC61000-4-4 40 A ESD Protection
• Low Profile - Maximum Height of 1.0 mm
• Small Footprint - Footprint Area of 8.45 mm
2
• Supplied in 8 mm Tape and Reel - 3,000 Units per Reel
• Cathode Indicated by Polarity Band
SOD-123FL
CASE 498
PLASTIC
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL94, VO
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
MARKING DIAGRAM
1
2
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
D
XX
CATHODE
ANODE
XX = Specific Device Code
= Date Code
D
ORDERING INFORMATION
Device
SMFxxxAT1
Package
Shipping
3,000/Tape & Reel
SOD-123FL
LEAD ORIENTATION IN TAPE:
Cathode Lead to Sprocket Holes
Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
SMF5.0AT1/D
March, 2003 - Rev. 0
SMF5.0AT1 Series
MAXIMUM RATINGS
Rating
Maximum P Dissipation (PW-10/1000 ms) (Note 1) SMF60A - SMF170A
Symbol
Value
175
Unit
W
P
pk
P
pk
P
pk
pk
Maximum P Dissipation (PW-10/1000 ms) (Note 1) SMF5.0A - SMF58A
200
W
pk
Maximum P Dissipation @ T = 25°C, (PW-8/20 ms) (Note 2)
1000
W
pk
A
DC Power Dissipation @ T = 25°C (Note 3)
Derate above 25°C
Thermal Resistance from Junction to Ambient (Note 3)
°P °
385
4.0
325
°mW
mW/°C
°C/W
A
D
R
θ
JA
Thermal Resistance from Junction to Lead (Note 3)
Operating and Storage Temperature Range
R
26
°C/W
°C
θ
Jcathode
T , T
-55 to +150
J
stg
1. Non-repetitive current pulse at T = 25°C, per waveform of Figure 2.
A
2. Non-repetitive current pulse at T = 25°C, per waveform of Figure 3.
A
3. Mounted with recommended minimum pad size, DC board FR-4.
ELECTRICAL CHARACTERISTICS (T = 25°C unless
A
I
otherwise noted, V = 3.5 V Max. @ I (Note 4) = 12 A)
F
F
I
F
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
V
C
PP
V
C
V
V
V
Working Peak Reverse Voltage
BR RWM
RWM
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V
I
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
F
I
Forward Current
I
PP
V
F
Forward Voltage @ I
F
Uni-Directional TVS
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
duty cycle = 4 pulses per minute maximum.
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2
SMF5.0AT1 Series
ELECTRICAL CHARACTERISTICS (T = 30°C unless otherwise noted, V = 1.25 Volts @ 200 mA)
L
F
V
RWM
(V)
V
BR
@ I (V) (Note 6)
I
T
I
R
@ V
V
I
(A)
T
RWM
C(Max)
PP(Max)
(Note 5)
5
Min
Nom
6.7
Max
(mA)
10
10
10
10
1
(mA)
400
400
250
100
50
25
10
5
(V)
9.2
(Note 7)
21.7
19.4
17.9
16.7
15.5
14.7
13.9
13.0
11.8
11.0
10.1
9.3
Device
SMF5.0A
SMF6.0A
SMF6.5A
SMF7.0A
SMF7.5A
SMF8.0A
SMF8.5A
SMF9.0A
SMF10A
SMF11A
SMF12A
SMF13A
SMF14A
SMF15A
SMF16A
SMF17A
SMF18A
SMF20A
SMF22A
SMF24A
SMF26A
SMF28A
SMF30A
SMF33A
SMF36A
SMF40A
SMF43A
SMF45A
SMF48A
SMF51A
SMF54A
SMF58A
SMF60A
SMF64A
SMF70A
SMF75A
SMF78A
SMF85A
SMF90A
SMF100A
SMF110A
SMF120A
SMF130A
SMF150A
SMF160A
SMF170A
Marking
KE
KG
KK
KM
KP
KR
KT
6.4
6.67
7.22
7.78
8.33
8.89
9.44
10
7
6
7.02
7.6
7.37
7.98
8.6
10.3
11.2
12
6.5
7
8.2
7.5
8
8.77
9.36
9.92
10.55
11.7
12.85
14
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86
12.9
13.6
14.4
15.4
17
1
8.5
9
1
KV
KX
KZ
1
10
11
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20
1
2.5
2.5
2.5
1
1
18.2
19.9
21.5
23.2
24.4
26
LE
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
1
LG
LK
15.15
16.4
17.6
18.75
19.9
21
1
1
1
8.6
LM
LP
1
1
8.2
1
1
7.7
LR
1
1
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
7.2
LT
1
1
6.8
LV
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40
23.35
25.6
28.1
30.4
32.8
35.1
38.7
42.1
46.8
50.3
52.65
56.1
59.7
63.15
67.8
70.2
74.85
81.9
87.7
91.25
99.2
105.5
117
1
1
6.2
LX
1
1
5.6
LZ
1
1
5.1
ME
MG
MK
MM
MP
MR
MT
MV
MX
MZ
NE
NG
NK
NM
NP
NR
NT
NV
NX
NZ
PE
PG
PK
PM
PP
PR
1
1
4.8
1
1
4.4
1
1
4.1
1
1
3.8
1
1
3.4
44.4
47.8
50
1
1
3.1
1
1
2.9
1
1
2.8
53.3
56.7
60
1
1
2.6
1
1
2.4
1
1
2.3
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100
111
1
1
2.1
1
1
1.8
1
1
1.7
1
1
1.5
92.1
95.8
104
1
1
121
126
137
146
162
177
193
209
243
259
275
1.4
1
1
1.4
1
1
1.3
111
1
1
1.2
123
1
1
1.1
122
133
144
167
178
189
128.5
140
135
1
1
1.0
147
1
1
0.9
151.5
176
159
1
1
0.8
185
1
1
0.7
187.5
199
197
1
1
0.7
209
1
1
0.6
5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (V
than the DC or continuous peak operating voltage level.
) which should be equal to or greater
RWM
6. V measured at pulse test current I at ambient temperature of 25°C.
BR
T
7. Surge current waveform per Figure 2 and derate per Figure 3.
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3
SMF5.0AT1 Series
TYPICAL PROTECTION CIRCUIT
Z
in
LOAD
V
in
V
L
10,000
1000
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50%
P
t
r
OF I
.
RSM
100
t ≤ 10 µs
r
PEAK VALUE - I
RSM
I
RSM
2
HALF VALUE -
50
0
100
10
t
P
1.0
10
100
t , PULSE WIDTH (ms)
1000
10,000
0
1
2
3
4
t, TIME (ms)
P
Figure 1. Pulse Rating Curve
Figure 2. 10 X 1000 ms Pulse Waveform
160
140
120
100
90
80
70
60
50
40
30
20
t
r
PEAK VALUE I
@ 8 ms
RSM
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
100
80
HALF VALUE I /2 @ 20 ms
RSM
60
t
P
40
20
0
10
0
0
25
50
75
100
125
150
0
20
40
t, TIME (ms)
60
80
T , AMBIENT TEMPERATURE (°C)
A
Figure 3. 8 X 20 ms Pulse Waveform
Figure 4. Pulse Derating Curve
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4
SMF5.0AT1 Series
3
2.5
2
1
0.7
0.5
0.3
0.2
PULSE WIDTH
T
L
10 ms
0.1
0.07
0.05
1.5
1
1 ms
0.03
0.02
0.5
0
100 µs
10 µs
10 20
0.01
0.1 0.2
0.5
1
2
5
50 100
25
50
75
100
125
150
175
D, DUTY CYCLE (%)
T, TEMPERATURE (°C)
Figure 6. Steady State Power Derating
Figure 5. Typical Derating Factor for Duty Cycle
1000
100
1.2
1.0
0.8
0.6
0.4
MEASURED @ ZERO BIAS
MEASURED @ 50% V
RWM
10
1
0.2
0
1
10
100
1000
-55
25
85
150
WORKING PEAK REVERSE VOLTAGE (VOLTS)
T, TEMPERATURE (°C)
Figure 7. Forward Voltage
Figure 8. Capacitance versus Working Peak
Reverse Voltage
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5
SMF5.0AT1 Series
INFORMATION FOR USING THE SOD-123 FLAT LEAD SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
RECOMMENDED FOOTPRINT FOR SOD-123FL
0.91
0.036
1.22
0.048
2.36
0.093
4.19
mm
inches
0.165
POWERMITE POWER DISSIPATION
The power dissipation of the SOD-123 Flat Lead is a
function of the mounting pad size. This can vary from the
minimum pad size for soldering to a pad size given for
maximum power dissipation. Power dissipation for a
one can calculate the power dissipation of the device which
in this case is 385 milliwatts.
150°C - 25°C
PD =
= 385 milliwatts
325°C/W
surface mount device is determined by T
, the
J(max)
The 325°C/W for the SOD-123 Flat Lead package
assumes the use of the recommended footprint on a glass
epoxy printed circuit board to achieve a power dissipation
of 385 milliwatts. There are other alternatives to achieving
higher power dissipation from the SOD-123 Flat Lead
package. Another alternative would be to use a ceramic
substrate or an aluminum core board such as Thermal
Clad . Using a board material such as Thermal Clad, an
aluminum core board, the power dissipation can be doubled
using the same footprint.
maximum rated junction temperature of the die, R , the
thermal resistance from the device junction to ambient, and
θJA
the operating temperature, T . Using the values provided
A
on the data sheet for the SOD-123 Flat Lead package, P
can be calculated as follows:
D
TJ(max) - TA
PD =
Rθ
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T of 25°C,
A
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
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6
SMF5.0AT1 Series
OUTLINE DIMENSIONS
Transient Voltage Suppressor - Surface Mounted
200 Watt Peak Power
SOD-123FL
CASE 498-01
ISSUE O
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
E
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED
ON FLAT SECTION OF THE LEAD: BETWEEN 0.10
AND 0.25 MM FROM THE LEAD TIP.
D
A
H
MILLIMETERS
DIM MIN MAX
INCHES
MIN
POLARITY INDICATOR
OPTIONAL AS NEEDED
MAX
0.071
0.114
0.039
0.043
0.037
0.004
0.008
0.150
8 °
C
A
B
C
D
E
H
J
1.50
2.50
0.90
0.70
0.55
0.00
0.10
3.40
0 °
1.80 0.059
2.90 0.098
1.00 0.035
1.10 0.028
0.95 0.022
0.10 0.000
0.20 0.004
3.80 0.134
K
L
K
L
8 °
0 °
J
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7
SMF5.0AT1 Series
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
JAPAN: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800-282-9855 Toll Free USA/Canada
SMF5.0AT1/D
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