SMMBFJ177LT1G [ONSEMI]
P 沟道 JFET 晶体管;型号: | SMMBFJ177LT1G |
厂家: | ONSEMI |
描述: | P 沟道 JFET 晶体管 小信号场效应晶体管 |
文件: | 总3页 (文件大小:45K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMBFJ177LT1
JFET Chopper
P−Channel − Depletion
Features
• Pb−Free Package is Available
http://onsemi.com
2 SOURCE
MAXIMUM RATINGS
Rating
3
Symbol
Value
25
Unit
Vdc
Vdc
GATE
Drain−Gate Voltage
Reverse Gate−Source Voltage
V
DG
V
GS(r)
−25
1 DRAIN
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
3
SOT−23 (TO−236AB)
CASE 318−08
STYLE 10
THERMAL CHARACTERISTICS
1
Total Device Dissipation FR−5 Board
(Note 1)
P
D
225
1.8
mW
2
T = 25°C
mW/°C
A
MARKING DIAGRAM
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
R
556
°C/W
°C
q
JA
6Y MG
G
Junction and Storage Temperature
T , T
J
−55 to +150
stg
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
1
6Y = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
MMBFJ177LT1
MMBFJ177LT1G
SOT−23
3000 Tape & Reel
3000 Tape & Reel
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
November, 2005 − Rev. 3
MMBFJ177LT1/D
MMBFJ177LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (V = 0, I = 1.0 mAdc)
V
(BR)GSS
30
−
−
Vdc
nAdc
Vdc
DS
D
Gate Reverse Current (V = 0 Vdc, V = 20 Vdc)
I
GSS
1.0
2.5
DS
GS
Gate Source Cutoff Voltage (V = 15 Vdc, I = 10 nAdc)
V
GS(off)
0.8
DS
D
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (V = 0, V = 15 Vdc) (Note 2)
I
DSS
1.5
−
20
1.0
300
11
mAdc
nAdc
W
GS
DS
Drain Cutoff Current (V = 15 Vdc, V = 10 Vdc)
I
D(off)
DS
GS
Drain Source On Resistance (I = 500 mAdc)
r
−
D
DS(on)
Input Capacitance
C
−
pF
iss
rss
V
DS
= 0, V = 10 Vdc
GS
f = 1.0 MHz
Reverse Transfer Capacitance
C
−
5.5
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%.
http://onsemi.com
2
MMBFJ177LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236AB)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
SEE VIEW C
3
H
E
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
E
c
MILLIMETERS
INCHES
1
2
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
b
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0.25
e
q
A
L
H
E
A1
L1
VIEW C
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MMBFJ177LT1/D
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