SMMBFJ310L [ONSEMI]

JFET - VHF/UHF Amplifier Transistor; JFET - VHF / UHF放大器晶体管


型号：	SMMBFJ310L
厂家：	ONSEMI
描述：	JFET - VHF/UHF Amplifier Transistor JFET - VHF / UHF放大器晶体管晶体放大器晶体管
文件：	总5页 (文件大小：167K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMBFJ309L, MMBFJ310L,

SMMBFJ310L

JFET - VHF/UHF Amplifier

Transistor

N−Channel

http://onsemi.com

Features

2 SOURCE

• AEC−Q101 Qualified and PPAP Capable

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

GATE

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

1 DRAIN

MAXIMUM RATINGS

Rating

Drain−Source Voltage

Symbol

Value

Unit

Vdc

SOT−23 (TO−236)

CASE 318

Gate−Source Voltage

Vdc

STYLE 10

Gate Current

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

MARKING DIAGRAM

Total Device Dissipation FR−5 Board,

(Note 1) T = 25°C

225

1.8

mW/°C

Derate above 25°C

6x M G

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

556

°C/W

°C

T , T

−55 to +150

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

6x = Device Code

x = U for MMBFJ309L

x = T for MMBFJ310L, SMMBFJ310L

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBFJ309LT1G

SOT−23

(Pb−Free)

3,000 / Tape &

Reel

MMBFJ310LT1G

SOT−23

(Pb−Free)

3,000 / Tape &

Reel

SMMBFJ310LT1G SOT−23

(Pb−Free)

3,000 / Tape &

Reel

SMMBFJ310LT3G SOT−23

(Pb−Free)

10,000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

November, 2011 − Rev. 5

MMBFJ309LT1/D

MMBFJ309L, MMBFJ310L, SMMBFJ310L

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Gate−Source Breakdown Voltage

(I = −1.0 mAdc, V = 0)

−25

−

Vdc

(BR)GSS

Gate Reverse Current (V = −15 Vdc)

−

−1.0

nAdc

mAdc

GSS

Gate Reverse Current (V = −15 Vdc, T = 125°C)

Gate Source Cutoff Voltage

MMBFJ309

MMBFJ310, SMMBFJ310

GS(off)

−1.0

−2.0

−

−4.0

−6.5

Vdc

(V = 10 Vdc, I = 1.0 nAdc)

ON CHARACTERISTICS

Zero−Gate−Voltage Drain Current

MMBFJ309

MMBFJ310, SMMBFJ310

−

mAdc

Vdc

DSS

(V = 10 Vdc, V = 0)

Gate−Source Forward Voltage

(I = 1.0 mAdc, V = 0)

−

1.0

GS(f)

SMALL−SIGNAL CHARACTERISTICS

Forward Transfer Admittance

|Y |

8.0

−

250

5.0

2.5

−

mmhos

(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)

Output Admittance

|y |

(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)

Input Capacitance

−

iss

(V = −10 Vdc, V = 0 Vdc, f = 1.0 MHz)

Reverse Transfer Capacitance

(V = −10 Vdc, V = 0 Vdc, f = 1.0 MHz)

−

rss

Equivalent Short−Circuit Input Noise Voltage

(V = 10 Vdc, I = 10 mAdc, f = 100 Hz)

−

nVń Hz

http://onsemi.com

MMBFJ309L, MMBFJ310L, SMMBFJ310L

= 10 V

T = -ꢀ55°C

+ꢀ25°C

DSS

+ꢀ25°C

+150°C

+ꢀ25°C

-ꢀ55°C

-1.0

-5.0

-4.0

-3.0

-2.0

- V , GATE-SOURCE VOLTAGE (VOLTS)

- V , GATE-SOURCE CUTOFF VOLTAGE (VOLTS)

DSS

Figure 1. Drain Current and Transfer

Characteristics versus Gate−Source Voltage

100 k

10 k

120

1.0 k

100

7.0

4.0

= -ꢀ2.3 V =

= -ꢀ5.7 V =

1.0 k

100

GS(off)

1.0

0.01

0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100

10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0

I , DRAIN CURRENT (mA)

, GATE SOURCE VOLTAGE (VOLTS)

Figure 2. Common−Source Output

Admittance and Forward Transconductance

versus Drain Current

Figure 3. On Resistance and Junction

Capacitance versus Gate−Source Voltage

http://onsemi.com

MMBFJ309L, MMBFJ310L, SMMBFJ310L

|S |, |S

|S |, |S |

12 22

0.85 0.45

0.79 0.39

0.73 0.33

0.67 0.27

0.61 0.21

0.55 0.15

0.060 1.00

0.048 0.98

0.036 0.96

0.024 0.94

0.012 0.92

0.90

6.0

3.0

2.4

1.8

1.2

0.6

= 10 V

= 10 mA

T = 25°C

= 10 V

= 10 mA

T = 25°C

100

200

300

500 700 1000

100

200

300

500 700 1000

f, FREQUENCY (MHz)

Figure 4. Common−Gate Y Parameter

Figure 5. Common−Gate S Parameter

Magnitude versus Frequency

, q

21 11

q , q

12 22

, q

11 12

, q

21 22

180° 50°

170° 40°

160° 30°

150° 20°

140° 10°

-ꢀ20° 87°

-ꢀ20°

-ꢀ20° 120°

-ꢀ40° 100°

-ꢀ60° 80°

-ꢀ80° 60°

-ꢀ100° 40°

-ꢀ120° 20°

-ꢀ40° 86°

-ꢀ60°

-ꢀ20°

-ꢀ40°

-ꢀ60°

-ꢀ80°

-ꢀ100°

-ꢀ80° 85°

-ꢀ100°

-ꢀ120° 84°

-ꢀ140°

= 10 V

= 10 mA

-ꢀ160° 83°

-ꢀ180°

T = 25°C

130°

0°

100

-ꢀ200° 82°

200

300

500 700 1000

100

200

300

500 700 1000

f, FREQUENCY (MHz)

Figure 6. Common−Gate Y Parameter

Phase−Angle versus Frequency

Figure 7. S Parameter Phase−Angle

versus Frequency

http://onsemi.com

MMBFJ309L, MMBFJ310L, SMMBFJ310L

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

SEE VIEW C

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

MILLIMETERS

INCHES

DIM

MIN

0.89

0.01

0.37

0.09

2.80

1.20

1.78

0.10

0.35

2.10

0°

NOM

1.00

0.06

0.44

0.13

2.90

1.30

1.90

0.20

0.54

2.40

−−−

MAX

MIN

0.035

0.001

0.015

0.003

0.110

0.047

0.070

0.004

0.014

0.083

0°

NOM

0.040

0.002

0.018

0.005

0.114

0.051

0.075

0.008

0.021

0.094

−−−

MAX

0.044

0.004

0.020

0.007

0.120

0.055

0.081

0.012

0.029

0.104

10°

1.11

0.10

0.50

0.18

3.04

1.40

2.04

0.30

0.69

2.64

10°

0.25

STYLE 10:

VIEW C

PIN 1. DRAIN

2. SOURCE

3. GATE

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

2.0

0.079

0.9

0.035

inches

SCALE 10:1

0.8

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

MMBFJ309LT1/D

http://onsemi.com

SMMBFJ310L [ONSEMI]

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