SMMBT2222AWT1G [ONSEMI]
NPN 双极晶体管;
| 型号： | SMMBT2222AWT1G |
| 厂家： | 
ONSEMI |
| 描述： | NPN 双极晶体管 放大器 光电二极管 小信号双极晶体管 |
| 文件： | 总6页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT2222AWT1
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−323/SC−70 package which
is designed for low power surface mount applications.
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Features
COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
MAXIMUM RATINGS
BASE
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
40
Unit
Vdc
2
V
CEO
V
CBO
V
EBO
EMITTER
75
Vdc
6.0
Vdc
Collector Current − Continuous
I
C
600
mAdc
3
SC−70
CASE 419
STYLE 3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
1
2
Total Device Dissipation FR−5 Board
P
D
150
mW
T = 25°C
A
Thermal Resistance, Junction−to−Ambient
R
833
°C/W
°C
q
JA
MARKING DIAGRAM
Junction and Storage Temperature
T , T
J
−55 to +150
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
P1 M G
G
1
P1 = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT2222AWT1G
SC−70 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
October, 2010 − Rev. 5
MMBT2222AWT1/D
MMBT2222AWT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 1)
V
40
75
6.0
−
−
−
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
C
B
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
−
Vdc
E
C
Base Cutoff Current
(V = 60 Vdc, V = 3.0 Vdc)
I
BL
20
10
nAdc
nAdc
CE
EB
Collector Cutoff Current
(V = 60 Vdc, V = 3.0 Vdc)
I
−
CEX
CE
EB
ON CHARACTERISTICS (Note 1)
DC Current Gain (Note 1)
H
−
FE
(I = 0.1 mAdc, V = 10 Vdc)
35
50
−
−
C
CE
(I = 1.0 mAdc, V = 10 Vdc)
C
CE
(I = 10 mAdc, V = 10 Vdc)
75
−
C
CE
(I = 150 mAdc, V = 10 Vdc)
100
40
300
−
C
CE
(I = 500 mAdc, V = 10 Vdc)
C
CE
Collector−Emitter Saturation Voltage (Note 1)
(I = 150 mAdc, I = 15 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
0.3
1.0
C
B
(I = 500 mAdc, I = 50 mAdc)
C
B
Base−Emitter Saturation Voltage (Note 1)
(I = 150 mAdc, I = 15 mAdc)
V
BE(sat)
0.6
−
1.2
2.0
C
B
(I = 500 mAdc, I = 50 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
300
−
−
MHz
pF
T
(I = 20 mAdc, V = 20 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
8.0
30
obo
(V = 10 Vdc, I = 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
−
pF
ibo
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
EB
C
Input Impedance
h
0.25
−
1.25
4.0
375
200
4.0
kW
ie
re
fe
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)
CE
C
−4
Voltage Feedback Ratio
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)
h
h
X 10
−
CE
C
Small−Signal Current Gain
75
25
−
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)
CE
C
Output Admittance
h
oe
mmhos
dB
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)
CE
C
Noise Figure
NF
(V = 10 Vdc, I = 100 mAdc, R = 1.0 kW, f = 1.0 kHz)
CE
C
S
SWITCHING CHARACTERISTICS
Delay Time
t
t
−
−
−
−
10
25
d
(V = 3.0 Vdc, V = −0.5 Vdc,
CC
BE
ns
ns
I
= 150 mAdc, I = 15 mAdc)
C
B1
Rise Time
Storage Time
Fall Time
t
r
225
60
s
(V = 30 Vdc, I = 150 mAdc,
CC
C
I
B1
= I = 15 mAdc)
B2
t
f
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
MMBT2222AWT1
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ꢀ30 V
200
+ꢀ30 V
1.0 to 100 ms,
1.0 to 100 ms,
200
+16 V
DUTY CYCLE ≈ 2.0%
+16 V
0
DUTY CYCLE ≈ 2.0%
0
1 k
< 20 ns
1N914
-14 V
1 kW
C * < 10 pF
S
-ꢀ2 V
C * < 10 pF
S
< 2 ns
-ꢀ4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
1000
700
500
T = 125°C
J
300
200
25°C
100
70
-55°C
50
30
20
V
V
= 1.0 V
= 10 V
CE
CE
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200 300
500 700 1.0 k
I , COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
1.0
0.8
T = 25°C
J
I = 1.0 mA
C
0.6
0.4
0.2
0
10 mA
150 mA
500 mA
50
0.005
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
I , BASE CURRENT (mA)
B
Figure 4. Collector Saturation Region
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3
MMBT2222AWT1
200
100
500
V
= 30 V
I /I = 10
C B
CC
I /I = 10
300
T = 25°C
J
C B
t′ = t - 1/8 t
f
s
s
I = I
B1 B2
200
70
50
t @ V = 30 V
CC
r
t @ V
T = 25°C
J
= 2.0 V
= 0
d
t @ V
EB(off)
EB(off)
100
70
d
30
20
t
f
50
30
20
10
7.0
5.0
10
3.0
2.0
7.0
5.0
5.0 7.0 10
20 30
50 70 100
200 300 500
5.0 7.0 10
20 30
50 70 100
200 300 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Turn−On Time
Figure 6. Turn−Off Time
10
10
R = OPTIMUM
S
R = SOURCE
f = 1.0 kHz
S
R = RESISTANCE
I = 1.0 mA, R = 150 W
S
C
8.0
8.0
S
500 mA, R = 200 W
S
I = 50 mA
C
100 mA, R = 2.0 kW
S
100 mA
50 mA, R = 4.0 kW
S
500 mA
6.0
4.0
2.0
0
6.0
4.0
2.0
0
1.0 mA
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
R , SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
S
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
500
V
= 20 V
CE
T = 25°C
20
J
300
200
C
eb
10
7.0
5.0
100
C
cb
3.0
2.0
70
50
0.1 0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
1.0
2.0 3.0
5.0 7.0 10
20
30
I , COLLECTOR CURRENT (mA)
50 70 100
REVERSE VOLTAGE (VOLTS)
C
Figure 9. Capacitances
Figure 10. Current−Gain Bandwidth Product
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4
MMBT2222AWT1
1
1.3
1.2
I /I = 10
I /I = 10
C
B
C
B
1.1
150°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
−55°C
25°C
0.1
−55°C
150°C
25°C
0.3
0.2
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
+0.5
0
V
= 1 V
CE
R
for V
CE(sat)
q
VC
−55°C
25°C
-ꢀ0.5
-ꢀ1.0
-ꢀ1.5
150°C
R
for V
BE
-ꢀ2.0
-ꢀ2.5
q
VB
0.3
0.2
0.001
0.01
0.1
1
0.1 0.2 0.5 1.0 2.0
5.0 10 20
50 100 200 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (A)
C
Figure 14. Temperature Coefficients
Figure 13. Base Emitter Voltage vs. Collector
Current
10
10 ms
1 ms
100 ms
1
1 s
Thermal Limit
0.1
0.01
Single Pulse Test
@ T = 25°C
A
0.001
0.01
0.1
1
(Vdc)
10
100
V
CE
Figure 15. Safe Operating Area
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5
MMBT2222AWT1
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE M
D
NOTES:
e1
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
MILLIMETERS
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
E
H
E
DIM
MIN
0.80
0.00
NOM
0.90
0.05
MAX
1.00
0.10
MIN
0.032
0.000
MAX
0.040
0.004
1
2
A
A1
A2
b
c
D
0.7 REF
0.35
0.18
2.10
1.24
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
E
e
1.30
0.65 BSC
0.425 REF
2.10
0.026 BSC
0.017 REF
0.083
e1
L
c
H
2.00
2.40
0.079
0.095
E
A2
A
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBT2222AWT1/D
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