SMMBT3906LT1G [ONSEMI]
General Purpose Transistor; 通用晶体管
| 型号： | SMMBT3906LT1G |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistor |
| 文件： | 总7页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT3906L, SMMBT3906L
General Purpose Transistor
PNP Silicon
Features
• AEC−Q101 Qualified and PPAP Capable
http://onsemi.com
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
−40
Unit
Vdc
Collector−Emitter Voltage
Collector−Base Voltage
V
CEO
V
CBO
V
EBO
−40
Vdc
3
Emitter−Base Voltage
−5.0
−200
−800
Vdc
1
Collector Current − Continuous
Collector Current − Peak (Note 3)
I
C
mAdc
mAdc
2
I
CM
SOT−23 (TO−236)
CASE 318
THERMAL CHARACTERISTICS
STYLE 6
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
P
D
(Note 1) @ T = 25°C
225
1.8
mW
mW/°C
A
MARKING DIAGRAM
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
R
556
°C/W
q
JA
2A M G
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) @ T = 25°C
300
2.4
mW
mW/°C
G
A
Derate above 25°C
1
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
2A = Specific Device Code
T , T
J
−55 to +150
M
= Date Code*
stg
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
3. Reference SOA curve.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT3906LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
MMBT3906LT3G
SMMBT3906LT1G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
SSMBT3906LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
November, 2011 − Rev. 10
MMBT3906LT1/D
MMBT3906L, SMMBT3906L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = −1.0 mAdc, I = 0)
−40
−40
−5.0
−
−
−
C
B
Collector−Base Breakdown Voltage
(I = −10 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
Vdc
(I = −10 mAdc, I = 0)
−
E
C
Base Cutoff Current
I
BL
nAdc
nAdc
(V = −30 Vdc, V = −3.0 Vdc)
−50
−50
CE
EB
Collector Cutoff Current
I
CEX
(V = −30 Vdc, V = −3.0 Vdc)
−
CE
EB
ON CHARACTERISTICS (Note 4)
DC Current Gain
H
−
FE
(I = −0.1 mAdc, V = −1.0 Vdc)
60
80
100
60
30
−
−
300
−
−
C
CE
(I = −1.0 mAdc, V = −1.0 Vdc)
C
CE
CE
CE
CE
(I = −10 mAdc, V = −1.0 Vdc)
C
(I = −50 mAdc, V = −1.0 Vdc)
C
(I = −100 mAdc, V = −1.0 Vdc)
C
Collector−Emitter Saturation Voltage
(I = −10 mAdc, I = −1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−0.25
−0.4
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = −10 mAdc, I = −1.0 mAdc)
V
BE(sat)
−0.65
−
−0.85
−0.95
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
MHz
pF
T
(I = −10 mAdc, V = −20 Vdc, f = 100 MHz)
250
−
−
C
CE
Output Capacitance
C
obo
(V = −5.0 Vdc, I = 0, f = 1.0 MHz)
4.5
10
CB
E
Input Capacitance
C
pF
ibo
(V = −0.5 Vdc, I = 0, f = 1.0 MHz)
−
EB
C
Input Impedance
h
kW
ie
re
fe
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
2.0
0.1
100
3.0
−
12
C
CE
−4
Voltage Feedback Ratio
h
h
X 10
−
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
C
10
CE
Small−Signal Current Gain
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
400
60
C
CE
Output Admittance
h
oe
mmhos
dB
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
C
CE
Noise Figure
NF
(I = −100 mAdc, V = −5.0 Vdc, R = 1.0 kW, f = 1.0 kHz)
4.0
C
CE
S
SWITCHING CHARACTERISTICS
Delay Time
t
t
−
−
−
−
35
35
d
(V = −3.0 Vdc, V = 0.5 Vdc,
CC
BE
ns
ns
I
= −10 mAdc, I = −1.0 mAdc)
C
B1
Rise Time
t
r
Storage Time
225
75
s
(V = −3.0 Vdc, I = −10 mAdc,
CC
C
I
B1
= I = −1.0 mAdc)
B2
Fall Time
t
f
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
http://onsemi.com
2
MMBT3906L, SMMBT3906L
3 V
3 V
< 1 ns
+9.1 V
275
275
< 1 ns
+0.5 V
10 k
10 k
0
C
< 4 pF*
C < 4 pF*
S
S
1N916
10.6 V
300 ns
10 < t < 500 ms
1
t
1
10.9 V
DUTY CYCLE = 2%
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T = 25°C
J
T = 125°C
J
10
5000
V
CC
I /I = 10
= 40 V
3000
2000
7.0
C B
C
5.0
obo
1000
700
C
ibo
500
3.0
2.0
300
200
Q
T
Q
A
100
70
1.0
0.1
50
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
REVERSE BIAS (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 3. Capacitance
Figure 4. Charge Data
500
500
I /I = 10
C B
V
= 40 V
CC
300
200
300
200
I = I
B1 B2
I /I = 20
C B
100
70
100
70
t @ V = 3.0 V
r CC
50
50
15 V
30
20
30
20
I /I = 10
C B
40 V
10
10
7
2.0 V
7
5
t @ V = 0 V
OB
d
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50
70 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 6. Fall Time
Figure 5. Turn−On Time
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3
MMBT3906L, SMMBT3906L
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0
4.0
3.0
2.0
1.0
0
12
SOURCE RESISTANCE = 200 W
= 1.0 mA
f = 1.0 kHz
I
= 1.0 mA
C
I
C
10
8
I
C
= 0.5 mA
SOURCE RESISTANCE = 200 W
= 0.5 mA
I
C
SOURCE RESISTANCE = 2.0 k
6
I
C
= 50 mA
4
I
= 50 mA
C
SOURCE RESISTANCE = 2.0 k
= 100 mA
I
= 100 mA
C
2
I
C
0
0.1 0.2
0.4
1.0 2.0 4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
g
Figure 7.
Figure 8.
h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
300
200
100
70
50
30
20
100
70
10
7
50
30
5
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 9. Current Gain
Figure 10. Output Admittance
20
10
10
7.0
5.0
7.0
5.0
3.0
2.0
3.0
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
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4
MMBT3906L, SMMBT3906L
TYPICAL STATIC CHARACTERISTICS
1000
100
10
V
CE
= 1 V
T = 150°C
J
25°C
-ꢀ55°C
1.0
10
100
1000
I , COLLECTOR CURRENT (mA)
C
Figure 13. DC Current Gain
1.0
0.8
0.6
0.4
T = 25°C
J
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 14. Collector Saturation Region
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5
MMBT3906L, SMMBT3906L
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
1.4
I /I = 10
C
B
I /I = 10
C
B
150°C
1.2
1.0
0.8
0.6
25°C
−55°C
−55°C
25°C
150°C
0.10
0.4
0.2
0.05
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
1000
100
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 16. Base Emitter Saturation Voltage vs.
Collector Current
1.4
1.2
1.0
0.8
0.6
1000
V
= 1 V
CE
V
= 2 V
T = 25°C
CE
A
−55°C
25°C
100
10
150°C
0.4
0.2
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. Base Emitter Voltage vs. Collector
Current
Figure 18. Current Gain Bandwidth vs.
Collector Current
1
1.0
0.5
1 ms
10 ms
1 s
100 ms
+25°C TO +125°C
q
FOR V
CE(sat)
VC
Thermal Limit
0.1
0
-ꢀ55°C TO +25°C
-ꢀ0.5
-ꢀ1.0
+25°C TO +125°C
-ꢀ55°C TO +25°C
0.01
q
FOR V
VB
BE(sat)
-ꢀ1.5
-ꢀ2.0
Single Pulse Test
@ T = 25°C
A
0.001
0.01
0.1
1
(Vdc)
10
0
20
40
60
80 100 120 140 160 180 200
I , COLLECTOR CURRENT (mA)
C
V
CE
Figure 19. Temperature Coefficients
Figure 20. Safe Operating Area
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6
MMBT3906L, SMMBT3906L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
−−−
MAX
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
10°
c
1
2
b
0.25
e
q
H
A
E
q
L
STYLE 6:
A1
L1
VIEW C
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MMBT3906LT1/D
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