SMMBT3906L [ONSEMI]
General Purpose Transistor;
| 型号： | SMMBT3906L |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistor |
| 文件： | 总7页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT3906L, SMMBT3906L
General Purpose Transistor
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
www.onsemi.com
COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
V
V
−40
Vdc
CEO
Collector−Base Voltage
−40
−5.0
−200
−800
Vdc
Vdc
CBO
EBO
3
Emitter−Base Voltage
1
Collector Current − Continuous
Collector Current − Peak (Note 3)
THERMAL CHARACTERISTICS
I
C
mAdc
mAdc
2
I
CM
SOT−23 (TO−236)
CASE 318
STYLE 6
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
P
D
(Note 1) @ T = 25°C
225
1.8
mW
mW/°C
A
MARKING DIAGRAM
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
R
556
°C/W
q
JA
2A M G
P
D
Substrate, (Note 2) @ T = 25°C
300
2.4
mW
mW/°C
G
A
Derate above 25°C
1
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
2A = Specific Device Code
T , T
J
−55 to +150
M
= Date Code*
stg
G
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
3. Reference SOA curve.
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT3906LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
MMBT3906LT3G
SMMBT3906LT1G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
SMMBT3906LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 12
MMBT3906LT1/D
MMBT3906L, SMMBT3906L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = −1.0 mAdc, I = 0)
−40
−40
−5.0
−
−
−
C
B
Collector−Base Breakdown Voltage
(I = −10 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
Vdc
(I = −10 mAdc, I = 0)
−
E
C
Base Cutoff Current
I
BL
nAdc
nAdc
(V = −30 Vdc, V = −3.0 Vdc)
−50
−50
CE
EB
Collector Cutoff Current
I
CEX
(V = −30 Vdc, V = −3.0 Vdc)
−
CE
EB
ON CHARACTERISTICS (Note 4)
DC Current Gain
H
−
FE
(I = −0.1 mAdc, V = −1.0 Vdc)
60
80
−
−
C
CE
(I = −1.0 mAdc, V = −1.0 Vdc)
C
CE
(I = −10 mAdc, V = −1.0 Vdc)
100
60
300
−
C
CE
(I = −50 mAdc, V = −1.0 Vdc)
C
CE
(I = −100 mAdc, V = −1.0 Vdc)
30
−
C
CE
Collector−Emitter Saturation Voltage
(I = −10 mAdc, I = −1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−0.25
−0.4
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = −10 mAdc, I = −1.0 mAdc)
V
BE(sat)
−0.65
−
−0.85
−0.95
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
MHz
pF
T
(I = −10 mAdc, V = −20 Vdc, f = 100 MHz)
250
−
−
C
CE
Output Capacitance
C
obo
(V = −5.0 Vdc, I = 0, f = 1.0 MHz)
4.5
10
CB
E
Input Capacitance
C
pF
ibo
(V = −0.5 Vdc, I = 0, f = 1.0 MHz)
−
EB
C
Input Impedance
h
kW
ie
re
fe
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
C
2.0
0.1
100
3.0
−
12
CE
−4
Voltage Feedback Ratio
h
h
X 10
−
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
C
10
CE
Small−Signal Current Gain
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
C
400
60
CE
Output Admittance
h
oe
mmhos
dB
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
C
CE
Noise Figure
NF
(I = −100 mAdc, V = −5.0 Vdc, R = 1.0 kW, f = 1.0 kHz)
C
4.0
CE
S
SWITCHING CHARACTERISTICS
Delay Time
t
t
−
−
−
−
35
35
d
(V = −3.0 Vdc, V = 0.5 Vdc,
CC
BE
ns
ns
I
C
= −10 mAdc, I = −1.0 mAdc)
B1
Rise Time
t
r
Storage Time
225
75
s
(V = −3.0 Vdc, I = −10 mAdc,
CC
C
I
B1
= I = −1.0 mAdc)
B2
Fall Time
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
www.onsemi.com
2
MMBT3906L, SMMBT3906L
3 V
3 V
< 1 ns
+9.1 V
275
275
< 1 ns
+0.5 V
10 k
10 k
0
C
< 4 pF*
C < 4 pF*
S
S
1N916
10.6 V
300 ns
10 < t < 500 ms
1
t
1
10.9 V
DUTY CYCLE = 2%
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T = 25°C
J
T = 125°C
J
10
5000
V
CC
I /I = 10
= 40 V
3000
2000
7.0
C B
C
5.0
obo
1000
700
C
ibo
500
3.0
2.0
300
200
Q
T
Q
A
100
70
1.0
0.1
50
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
REVERSE BIAS (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 3. Capacitance
Figure 4. Charge Data
500
500
I /I = 10
C B
V
= 40 V
CC
300
200
300
200
I = I
B1 B2
I /I = 20
C B
100
70
100
70
t @ V = 3.0 V
r CC
50
50
15 V
30
20
30
20
I /I = 10
C B
40 V
10
10
7
2.0 V
7
5
t @ V = 0 V
OB
d
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50
70 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 6. Fall Time
Figure 5. Turn−On Time
www.onsemi.com
3
MMBT3906L, SMMBT3906L
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0
4.0
3.0
2.0
1.0
0
12
SOURCE RESISTANCE = 200 W
= 1.0 mA
f = 1.0 kHz
I
= 1.0 mA
C
I
C
10
8
I
C
= 0.5 mA
SOURCE RESISTANCE = 200 W
= 0.5 mA
I
C
SOURCE RESISTANCE = 2.0 k
= 50 mA
6
I
C
4
I
= 50 mA
C
SOURCE RESISTANCE = 2.0 k
= 100 mA
I
= 100 mA
C
2
I
C
0
0.1 0.2
0.4
1.0 2.0 4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
g
Figure 7.
Figure 8.
h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
300
200
100
70
50
30
20
100
70
10
7
50
30
5
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 9. Current Gain
Figure 10. Output Admittance
20
10
10
7.0
5.0
7.0
5.0
3.0
2.0
3.0
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
www.onsemi.com
4
MMBT3906L, SMMBT3906L
TYPICAL STATIC CHARACTERISTICS
1000
100
10
V
CE
= 1 V
T = 150°C
J
25°C
-ꢀ55°C
1.0
10
100
1000
I , COLLECTOR CURRENT (mA)
C
Figure 13. DC Current Gain
1.0
0.8
0.6
0.4
T = 25°C
J
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 14. Collector Saturation Region
www.onsemi.com
5
MMBT3906L, SMMBT3906L
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
1.4
I /I = 10
C
B
I /I = 10
C
B
150°C
1.2
1.0
0.8
0.6
25°C
−55°C
−55°C
25°C
150°C
0.10
0.4
0.2
0.05
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
1000
100
I , COLLECTOR CURRENT (A)
I , COLLECTOR CURRENT (A)
C
C
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 16. Base Emitter Saturation Voltage vs.
Collector Current
1.4
1.2
1.0
0.8
0.6
1000
V
CE
= 1 V
V
CE
= 2 V
T = 25°C
A
−55°C
25°C
100
150°C
0.4
0.2
10
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
I , COLLECTOR CURRENT (A)
I , COLLECTOR CURRENT (mA)
C
C
Figure 17. Base Emitter Voltage vs. Collector
Current
Figure 18. Current Gain Bandwidth vs.
Collector Current
1
1.0
0.5
1 ms
10 ms
1 s
100 ms
+25°C TO +125°C
q
FOR V
CE(sat)
VC
Thermal Limit
0.1
0
-ꢀ55°C TO +25°C
-ꢀ0.5
-ꢀ1.0
+25°C TO +125°C
-ꢀ55°C TO +25°C
0.01
q
FOR V
VB
BE(sat)
-ꢀ1.5
-ꢀ2.0
Single Pulse Test
@ T = 25°C
A
0.001
0.01
0.1
1
(Vdc)
10
0
20
40
60
80 100 120 140 160 180 200
I , COLLECTOR CURRENT (mA)
C
V
CE
Figure 19. Temperature Coefficients
Figure 20. Safe Operating Area
www.onsemi.com
6
MMBT3906L, SMMBT3906L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
STYLE 6:
SEE VIEW C
SIDE VIEW
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
0.90
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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◊
MMBT3906LT1/D
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