SMMBT918LT1 [ONSEMI]
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AF, CASE 318-08, 3 PIN;
| 型号： | SMMBT918LT1 |
| 厂家： | 
ONSEMI |
| 描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AF, CASE 318-08, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT918LT1
VHF/UHF Transistor
NPN Silicon
Features
• Pb−Free Package is Available
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
1
BASE
Collector−Emitter Voltage
V
CEO
V
CBO
V
EBO
15
Vdc
Collector−Base Voltage
30
3.0
50
Vdc
Vdc
2
EMITTER
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
I
mAdc
C
3
Characteristic
Symbol
Max
Unit
1
Total Device Dissipation FR−5 Board,
P
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
2
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556
°C/W
SOT−23 (TO−236)
CASE 318
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
STYLE 6
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
MARKING DIAGRAM
T , T
J
−55 to +150
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M3B M G
G
1
M3B = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT918LT1
MMBT918LT1G
SOT−23
3000 / Tape & Reel
3000 / Tape & Reel
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 5
MMBT918LT1/D
MMBT918LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 3.0 mAdc, I = 0)
15
30
3.0
−
−
−
C
B
Collector−Base Breakdown Voltage
(I = 1.0 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
Vdc
−
E
C
Collector Cutoff Current
(V = 15 Vdc, I = 0)
I
nAdc
CBO
50
CB
E
ON CHARACTERISTICS
DC Current Gain
h
−
FE
(I = 3.0 mAdc, V = 1.0 Vdc)
C
20
−
−
CE
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
0.4
1.0
C
B
Base−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
−
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
MHz
pF
T
(I = 4.0 mAdc, V = 10 Vdc, f = 100 MHz)
600
−
C
CE
Output Capacitance
C
obo
(V = 0 Vdc, I = 0, f = 1.0 MHz)
−
−
3.0
1.7
CB
E
(V = 10 Vdc, I = 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
pF
dB
ibo
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
EB
−
−
2.0
6.0
−
C
Noise Figure
NF
(I = 1.0 mAdc, V = 6.0 Vdc, R = 50 W, f = 60 MHz) (Figure 1)
C
CE
S
Power Output
P
mW
dB
out
(I = 8.0 mAdc, V = 15 Vdc, f = 500 MHz)
C
30
11
CB
Common−Emitter Amplifier Power Gain
(I = 6.0 mAdc, V = 12 Vdc, f = 200 MHz)
G
pe
−
C
CB
V
BB
V
CC
EXTERNAL
100 k
1000 pF BYPASS
0.018 mF
0.018 mF
50 W
RF
VM
3
C
G
G
0.018 mF
0.018 mF
NF TEST CONDITIONS
TEST CONDITIONS
pe
ꢀI = 1.0 mA
C
ꢀV = 6.0 VOLTS
ꢀI = 6.0 mA
C
ꢀV = 12 VOLTS
CE
CE
ꢀR = 50 W
S
ꢀf = 60 MHz
ꢀf = 200 MHz
Figure 1. NF, Gpe Measurement Circuit 20−200
http://onsemi.com
2
MMBT918LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
3
H
E
E
c
1
2
MILLIMETERS
INCHES
b
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.25
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
e
q
A
L
A1
L1
VIEW C
H
E
2.10
2.40
2.64
0.083
0.094
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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For additional information, please contact your
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MMBT918LT1/D
相关型号：
SMMBTA06LT1
500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN
ONSEMI
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