SMUN2211T1_技术文档

MUN2211T1, SMUN2211T1,

NSVMUN2211T1 Series

Bias Resistor Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

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This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base−emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the

SC−59 package which is designed for low power surface

mount applications.

NPN SILICON

BIAS RESISTOR

TRANSISTORS

Features

SC−59

CASE 318D

STYLE 1

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

PIN 3

COLLECTOR

(OUTPUT)

• Moisture Sensitivity Level: 1

PIN 2

BASE

(INPUT)

R

1

• ESD Rating − Human Body Model: Class 1

− Machine Model: Class B

2

PIN 1

EMITTER

(GROUND)

• The SC−59 Package can be Soldered Using Wave or Reflow

• The Modified Gull−Winged Leads Absorb Thermal Stress During

Soldering Eliminating the Possibility of Damage to the Die

• AEC−Q101 Qualified and PPAP Capable

MARKING DIAGRAM

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

• Pb−Free Packages are Available*

8x M G

G

1

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

A

8x = Device Code (Refer to page 2)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

50

Unit

Vdc

M

= Date Code*

V

CBO

CEO

G

= Pb−Free Package

V

50

Vdc

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

I

C

100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

See detailed ordering and shipping information in the table on

page 2 of this data sheet.

DEVICE MARKING INFORMATION

See specific marking information in the Device Marking and

Resistor Values table on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

1

Publication Order Number:

January, 2012 − Rev. 15

MUN2211T1/D

MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

P

D

T = 25°C

230 (Note 1)

338 (Note 2)

1.8 (Note 1)

2.7 (Note 2)

mW

A

Derate above 25°C

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Lead

Junction and Storage Temperature Range

R

540 (Note 1)

370 (Note 2)

°C/W

°C

q

JA

R

264 (Note 1)

287 (Note 2)

q

JL

T , T

J

−55 to +150

stg

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 x 1.0 inch Pad.

DEVICE MARKING AND RESISTOR VALUES

†

Device

Package

Marking

8A

R1 (K)

10

R2 (K)

Shipping

MUN2211T1

SC−59

10

3,000/Tape & Reel

MUN2211T1G,

SMUN2211T1G

SC−59

(Pb−Free)

8A

10

MUN2211T3

SC−59

8A

10

10,000/Tape & Reel

MUN2211T3G,

SMUN2211T3G

SC−59

(Pb−Free)

MUN2212T1

SC−59

8B

22

3,000/Tape & Reel

MUN2212T1G,

SMUN2212T1G,

NSVMUN2212T1G

SC−59

(Pb−Free)

MUN2213T1

SC−59

8C

47

3,000/Tape & Reel

MUN2213T1G,

SMUN2213T1G

SC−59

(Pb−Free)

MUN2214T1

SC−59

8D

10

47

3,000/Tape & Reel

MUN2214T1G,

SMUN2214T1G

SC−59

(Pb−Free)

MUN2214T3

SC−59

8D

10

47

10,000/Tape & Reel

MUN2214T3G,

SMUN2214T3G

SC−59

(Pb−Free)

MUN2215T1

SC−59

8E

10

∞

3,000/Tape & Reel

MUN2215T1G

SC−59

(Pb−Free)

MUN2216T1

SC−59

8F

4.7

∞

3,000/Tape & Reel

MUN2216T1G,

SMUN2216T1G

SC−59

(Pb−Free)

MUN2230T1

SC−59

8G

1.0

3,000/Tape & Reel

MUN2230T1G,

SMUN2230T1G

SC−59

(Pb−Free)

MUN2231T1 (Note 3)

MUN2231T1G (Note 3)

SC−59

8H

2.2

3,000/Tape & Reel

SC−59

(Pb−Free)

MUN2232T1

SC−59

8J

4.7

3,000/Tape & Reel

MUN2232T1G,

SMUN2232T1G

SC−59

(Pb−Free)

MUN2233T1

SC−59

8K

4.7

47

3,000/Tape & Reel

MUN2233T1G,

NSVMUN2233T1G

SC−59

(Pb−Free)

MUN2234T1 (Note 3)

SC−59

8L

22

47

3,000/Tape & Reel

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2

MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

DEVICE MARKING AND RESISTOR VALUES

MUN2234T1G (Note 3)

SC−59

(Pb−Free)

8L

22

47

3,000/Tape & Reel

MUN2236T1

SC−59

8N

100

3,000/Tape & Reel

MUN2236T1G

SC−59

(Pb−Free)

MUN2237T1

SC−59

8P

47

22

3,000/Tape & Reel

MUN2237T1G

SC−59

(Pb−Free)

MUN2240T1 (Note 3)

SC−59

8T

47

∞

3,000/Tape & Reel

MUN2240T1G,

SMUN2240T1G (Note 3)

SC−59

(Pb−Free)

MUN2241T1 (Note 3)

MUN2241T1G (Note 3)

SC−59

8U

100

∞

3,000/Tape & Reel

SC−59

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

3. New devices. Updated curves to follow in subsequent data sheets.

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3

MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (V = 50 V, I = 0)

I

−

100

500

nAdc

mAdc

CB

E

CBO

Collector-Emitter Cutoff Current (V = 50 V, I = 0)

CE

B

CEO

Emitter-Base Cutoff Current

(V = 6.0 V, I = 0)

I

EBO

EB

C

MUN2211T1, SMUN2211T1

−

0.5

0.2

MUN2212T1, SMUN2212T1, NSVMUN2212T1

MUN2213T1, SMUN2213T1

MUN2214T1, SMUN2214T1

MUN2215T1

0.1

0.2

0.9

MUN2216T1, SMUN2216T1

MUN2230T1, SMUN2230T1

MUN2231T1

MUN2232T1, SMUN2232T1

MUN2233T1, NSVMUN2233T1

MUN2234T1

MUN2236T1

MUN2237T1

MUN2240T1, SMUN2240T1

MUN2241T1

1.9

4.3

2.3

1.5

0.18

0.13

0.05

0.13

0.2

0.1

Collector-Base Breakdown Voltage

V

Vdc

(BR)CBO

(I = 10 mA, I = 0)

50

−

C

E

Collector-Emitter Breakdown Voltage (Note 4)

(I = 2.0 mA, I = 0)

(BR)CEO

C

B

ON CHARACTERISTICS (Note 4)

DC Current Gain

h

FE

(V = 10 V, I = 5.0 mA)

CE

C

MUN2211T1, SMUN2211T1

MUN2212T1, SMUN2212T1, NSVMUN2212T1

MUN2213T1, SMUN2213T1

MUN2214T1, SMUN2214T1

MUN2215T1

MUN2216T1, SMUN2216T1

MUN2230T1, SMUN2230T1

MUN2231T1

MUN2232T1, SMUN2232T1

MUN2233T1, NSVMUN2233T1

MUN2234T1

MUN2236T1

MUN2237T1

35

60

−

100

140

350

5.0

80

160

3.0

8.0

15

30

80

200

150

140

350

80

MUN2240T1, SMUN2240T1

MUN2241T1

160

Collector-Emitter Saturation Voltage

V

Vdc

CE(sat)

(I = 10 mA, I = 0.3 mA)

C

B

MUN2211T1, SMUN2211T1

MUN2212T1, SMUN2212T1, NSVMUN2212T1

MUN2213T1, SMUN2213T1

MUN2214T1, SMUN2214T1

MUN2236T1

−

0.25

(I = 10 mA, I = 5 mA)

C

B

MUN2230T1, SMUN2230T1

MUN2231T1

−

0.25

MUN2237T1

MUN2241T1

(I = 10 mA, I = 1 mA)

C

B

MUN2215T1

−

0.25

MUN2216T1, SMUN2216T1

MUN2232T1, SMUN2232T1

MUN2233T1, NSVMUN2233T1

MUN2234T1

MUN2240T1, SMUN2240T1

4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.

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MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)

A

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS (Note 5) (Continued)

Output Voltage (on)

V

OL

Vdc

(V = 5.0 V, V = 2.5 V, R = 1.0 kW)

CC

B

L

MUN2211T1, SMUN2211T1

MUN2212T1, SMUN2212T1, NSVMUN2212T1

MUN2214T1, SMUN2214T1

MUN2215T1

MUN2216T1, SMUN2216T1

MUN2230T1, SMUN2230T1

MUN2231T1

−

0.2

MUN2232T1, SMUN2232T1

MUN2233T1, NSVMUN2233T1

MUN2234T1

(V = 5.0 V, V = 3.5 V, R = 1.0 kW)

CC

B

L

−

0.2

MUN2213T1, SMUN2213T1

MUN2240T1, SMUN2240T1

(V = 5.0 V, V = 5.5 V, R = 1.0 kW)

CC

B

L

−

0.2

MUN2236T1

(V = 5.0 V, V = 4.0 V, R = 1.0 kW)

CC

B

L

MUN2237T1

(V = 5.0 V, V = 5.0 V, R = 1.0 kW)

CC

B

L

MUN2241T1

Output Voltage (off)

(V = 5.0 V, V = 0.5 V, R = 1.0 kW)

V

OH

Vdc

CC

B

L

MUN2211T1, SMUN2211T1

MUN2212T1, SMUN2212T1, NSVMUN2212T1

MUN2213T1, SMUN2213T1

MUN2214T1, SMUN2214T1

MUN2233T1, NSVMUN2233T1

MUN2234T1

4.9

−

(V = 5.0 V, V = 0.050 V, R = 1.0 kW)

CC

B

L

4.9

−

MUN2230T1, SMUN2230T1

(V = 5.0 V, V = 0.25 V, R = 1.0 kW)

CC

B

L

4.9

−

MUN2215T1

MUN2216T1, SMUN2216T1

MUN2231T1

MUN2232T1, SMUN2232T1

MUN2236T1

MUN2237T1

MUN2240T1, SMUN2240T1

MUN2241T1

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5

MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)

A

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS (Note 5) (Continued)

Input Resistor

R

kW

1

MUN2211T1, SMUN2211T1

MUN2212T1, SMUN2212T1, NSVMUN2212T1

MUN2213T1, SMUN2213T1

MUN2214T1, SMUN2214T1

MUN2215T1

7.0

15.4

32.9

7.0

10

22

13

28.6

61.1

13

47

10

7.0

13

MUN2216T1, SMUN2216T1

MUN2230T1, SMUN2230T1

MUN2231T1

MUN2232T1, SMUN2232T1

MUN2233T1, NSVMUN2233T1

MUN2234T1

MUN2236T1

MUN2237T1

MUN2240T1, SMUN2240T1

MUN2241T1

3.3

4.7

1.0

2.2

4.7

22

100

47

100

6.1

0.7

1.3

1.5

2.9

3.3

6.1

3.3

6.1

15.4

70

28.6

130

61.1

130

32.9

70

Resistor Ratio

R /R

1 2

MUN2211T1, SMUN2211T1

MUN2212T1, SMUN2212T1, NSVMUN2212T1

MUN2213T1, SMUN2213T1

MUN2214T1, SMUN2214T1

MUN2215T1

0.8

0.17

−

1.0

0.21

−

1.2

0.25

−

MUN2216T1, SMUN2216T1

MUN2230T1, SMUN2230T1

MUN2231T1

MUN2232T1, SMUN2232T1

MUN2233T1, NSVMUN2233T1

MUN2234T1

MUN2236T1

MUN2237T1

MUN2240T1, SMUN2240T1

MUN2241T1

−

0.8

0.055

0.38

0.8

1.7

−

1.0

0.12

0.47

1.0

2.15

−

1.2

0.185

0.56

1.2

2.6

−

5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.

350

300

250

200

150

100

R

= 370°C/W

50

0

q

JA

−50

0

50

100

150

T , AMBIENT TEMPERATURE (°C)

A

Figure 1. Derating Curve

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MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS − MUN2211T1, SMUN2211T1

1

1000

I /I = 10

C B

V

CE

= 10 V

T ꢀ=ꢀ-25°C

A

T ꢀ=ꢀ75°C

A

25°C

75°C

25°C

-25°C

0.1

100

0.01

0.001

10

0

20

40

60

80

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 2. V_CE(sat)versus I_C

Figure 3. DC Current Gain

4

3

100

10

25°C

75°C

f = 1 MHz

I = 0 V

E

T ꢀ=ꢀ-25°C

A

T = 25°C

A

1

0.1

2

1

0

0.01

0.001

V = 5 V

O

0

10

20

30

40

50

0

1

2

3

4

5

6

7

8

9

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 4. Output Capacitance

Figure 5. Output Current versus Input Voltage

10

T ꢀ=ꢀ-25°C

A

V = 0.2 V

O

25°C

75°C

1

0.1

0

10

20

30

40

50

I , COLLECTOR CURRENT (mA)

C

Figure 6. Input Voltage versus Output Current

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7

MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS − MUN2212T1, SMUN2212T1, NSVMUN2212T1

1000

1

V

CE

= 10 V

I /I = 10

C B

T ꢀ=ꢀ-25°C

A

T ꢀ=ꢀ75°C

A

25°C

75°C

0.1

-25°C

100

0.01

10

0.001

1

10

100

0

20

40

60

80

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 7. V_CE(sat)versus I_C

Figure 8. DC Current Gain

4

3

2

1

0

100

10

1

75°C

25°C

f = 1 MHz

T ꢀ=ꢀ-25°C

A

I = 0 V

E

T = 25°C

A

0.1

0.01

V = 5 V

O

0.001

0

10

20

30

40

50

0

2

4

6

8

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 9. Output Capacitance

Figure 10. Output Current versus Input Voltage

100

V = 0.2 V

O

T ꢀ=ꢀ-25°C

A

10

1

25°C

75°C

0.1

0

10

20

30

40

50

I , COLLECTOR CURRENT (mA)

C

Figure 11. Input Voltage versus Output Current

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MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS − MUN2213T1, SMUN2213T1

10

1

1000

T ꢀ=ꢀ-25°C

A

I /I = 10

C B

V

CE

= 10 V

T ꢀ=ꢀ75°C

A

25°C

75°C

25°C

-25°C

100

0.1

0.01

10

1

10

100

0

20

40

60

80

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 12. V_CE(sat)versus I_C

Figure 13. DC Current Gain

1

100

10

1

25°C

75°C

f = 1 MHz

I = 0 V

E

T ꢀ=ꢀ-25°C

A

0.8

T = 25°C

A

0.6

0.4

0.1

0.01

0.2

0

V = 5 V

O

0.001

0

10

20

30

40

50

0

2

4

6

8

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 14. Output Capacitance

Figure 15. Output Current versus Input Voltage

100

V = 0.2 V

O

T ꢀ=ꢀ-25°C

A

25°C

75°C

10

1

0.1

0

10

20

30

40

50

I , COLLECTOR CURRENT (mA)

C

Figure 16. Input Voltage versus Output Current

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9

MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS − MUN2214T1, SMUN2214T1

1

300

T ꢀ=ꢀ-25°C

A

I /I = 10

C B

T ꢀ=ꢀ75°C

A

V

CE

= 10

250

200

150

100

25°C

75°C

25°C

0.1

-25°C

0.01

50

0

0.001

0

20

40

60

80

1

2

4

6

8

10 15 20 40 50 60 70 80 90 100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 17. V_CE(sat)versus I_C

Figure 18. DC Current Gain

4

3.5

3

100

10

1

75°C

25°C

f = 1 MHz

l = 0 V

E

T = 25°C

A

2.5

T ꢀ=ꢀ-25°C

A

2

1.5

1

0.5

0

V = 5 V

O

0

2

4

6

8

10 15 20 25 30 35 40 45 50

0

2

4

6

8

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 19. Output Capacitance

Figure 20. Output Current versus Input Voltage

10

T ꢀ=ꢀ-25°C

A

V = 0.2 V

O

25°C

75°C

1

0.1

0

10

20

30

40

50

I , COLLECTOR CURRENT (mA)

C

Figure 21. Input Voltage versus Output Current

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MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2215T1

1000

1

V

CE

= 10 V

I /I = 10

C

B

75°C

T = −25°C

A

75°C

100

0.1

25°C

−25°C

25°C

0.01

10

1

0.001

0

20

30

40

50

1

10

100

10

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 22. V_CE(sat)versus I_C

Figure 23. DC Current Gain

100

10

1

4.5

4

75°C

f = 1 MHz

= 0 V

T = 25°C

A

I

E

3.5

3

25°C

2.5

2

T = −25°C

A

0.1

1.5

1

0.01

V

O

= 5 V

0.5

0.001

0

1

2

3

4

5

6

7

8

9

10

5

10 15 20 25 30 35 40 45 50

V , INPUT VOLTAGE (VOLTS)

in

V , REVERSE BIAS VOLTAGE (VOLTS)

R

Figure 24. Output Capacitance

Figure 25. Output Current versus Input Voltage

10

T = −25°C

A

1

25°C

75°C

V

O

= 0.2 V

40

0.1

0

10

20

30

50

I , COLLECTOR CURRENT (mA)

C

Figure 26. Input Voltage versus Output Current

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MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2216T1, SMUN2216T1

1

1000

V

CE

= 10 V

75°C

I /I = 10

C

B

T = −25°C

A

75°C

25°C

100

0.1

−25°C

25°C

0.01

10

1

0.001

0

20

30

40

50

1

10

100

10

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 27. V_CE(sat)versus I_C

Figure 28. DC Current Gain

100

10

1

4.5

4

75°C

f = 1 MHz

= 0 V

T = 25°C

A

I

E

25°C

3.5

3

T = −25°C

A

2.5

2

0.1

1.5

1

0.01

V

= 5 V

9

O

0.5

0.001

0

1

2

3

4

5

6

7

8

10

5

10 15 20 25 30 35 40 45 50

V , INPUT VOLTAGE (VOLTS)

in

V , REVERSE BIAS VOLTAGE (VOLTS)

R

Figure 29. Output Capacitance

Figure 30. Output Current versus Input Voltage

10

T = −25°C

A

1

25°C

75°C

V

O

= 0.2 V

0.1

0

10

20

30

40

50

I , COLLECTOR CURRENT (mA)

C

Figure 31. Input Voltage versus Output Current

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12

MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2230T1, SMUN2230T1

100

1

I /I = 10

C

B

75°C

0.1

75°C

−25°C

10

25°C

0.01

T = −25°C

A

V

CE

= 10 V

0.001

1

0

10

20

30

40

50

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 32. V_CE(sat)versus I_C

Figure 33. DC Current Gain

4.5

4

100

10

1

75°C

f = 1 MHz

= 0 V

T = 25°C

A

I

E

3.5

3

25°C

2.5

2

T = −25°C

A

0.1

1.5

1

0.01

V

O

= 5 V

0.5

0

0.001

5

10 15 20 25 30 35 40 45 50

0

1

2

3

4

5

6

7

8

9

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 34. Output Capacitance

Figure 35. Output Current versus Input Voltage

10

T = −25°C

A

75°C

1

25°C

V

O

= 0.2 V

40

0.1

0

10

20

30

50

I , COLLECTOR CURRENT (mA)

C

Figure 36. Input Voltage versus Output Current

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13

MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2232T1, SMUN2232T1

1000

1

V

CE

= 10 V

I /I = 10

C

B

75°C

25°C

75°C

100

0.1

−25°C

25°C

T = −25°C

A

0.01

10

1

0.001

0

10

20

30

40

50

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 37. V_CE(sat)versus I_C

Figure 38. DC Current Gain

6

5

4

3

2

1

100

10

1

f = 1 MHz

= 0 V

T = 25°C

A

75°C

I

E

25°C

T = −25°C

A

0.1

0.01

V

O

= 5 V

0

0.001

5

10 15 20 25 30 35 40 45 50

0

1

2

3

4

5

6

7

8

9

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 39. Output Capacitance

Figure 40. Output Current versus Input Voltage

10

T = −25°C

A

1

75°C

25°C

V

O

= 0.2 V

40

0.1

0

10

20

30

50

I , COLLECTOR CURRENT (mA)

C

Figure 41. Input Voltage versus Output Current

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14

MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2233T1, NSVMUN2233T1

1000

1

V

CE

= 10 V

I /I = 10

C

B

75°C

T = −25°C

A

100

0.1

75°C

25°C

−25°C

25°C

0.01

10

1

0.001

0

5

10

15

20

25

30

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 42. V_CE(sat)versus I_C

Figure 43. DC Current Gain

4

3.5

3

100

10

1

75°C

f = 1 MHz

= 0 V

T = 25°C

A

I

E

25°C

2.5

2

T = −25°C

A

0.1

1.5

1

0.01

V

O

= 5 V

0.5

0

0.001

5

10 15 20 25 30 35 40 45 50

0

1

2

3

4

5

6

7

8

9

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 44. Output Capacitance

Figure 45. Output Current versus Input Voltage

10

T = −25°C

A

1

75°C

25°C

V

O

= 0.2 V

20

0.1

0

5

10

15

25

I , COLLECTOR CURRENT (mA)

C

Figure 46. Input Voltage versus Output Current

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15

MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS − MUN2236T1

1

1000

V

CE

= 10 V

I /I = 10

C

B

T = −25°C

A

75°C

25°C

75°C

T = −25°C

A

0.1

100

10

0.01

0

5

10

15

20

25

30

35

40

0.1

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 47. V_CE(sat)versus I_C

Figure 48. DC Current Gain

100

5

4.5

4

75°C

f = 1 MHz

= 0 V

T = −25°C

A

l

E

T = 25°C

A

3.5

3

10

1

25°C

2.5

2

1.5

1

V

O

= 5 V

35

0.5

0

0.1

0

5

10

15

20

25

30

35

40

45

0

5

10

15

20

25

30

40

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 49. Output Capacitance

Figure 50. Output Current versus Input Voltage

100

25°C

75°C

V

O

= 0.2 V

T = −25°C

A

10

1

0.1

0

5

10

15

20

25

30

35

I , COLLECTOR CURRENT (mA)

C

Figure 51. Input Voltage versus Output Current

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16

MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS − MUN2237T1

1

1000

V

CE

= 10 V

I /I = 10

C

B

75°C

25°C

T = −25°C

A

25°C

75°C

T = −25°C

A

100

0.1

10

1

0.01

0

5

10

15

20

25

30

35

40

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 52. V_CE(sat)versus I_C

Figure 53. DC Current Gain

2

1.8

1.6

1.4

1.2

1

100

10

1

75°C

T = −25°C

A

25°C

0.8

0.6

0.4

0.1

f = 1 MHz

= 0 V

T = 25°C

A

0.01

V

O

= 5 V

14

l

E

0.2

0

0.001

0

5

10

15

20

25

30

35

40

45

0

2

4

6

8

10

12

16

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 54. Output Capacitance

Figure 55. Output Current versus Input Voltage

100

V

O

= 0.2 V

T = −25°C

A

25°C

75°C

10

1

0

5

10

15

20

25

30

35

40

I , COLLECTOR CURRENT (mA)

C

Figure 56. Input Voltage versus Output Current

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17

MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

TYPICAL APPLICATIONS FOR NPN BRTs

+12 V

ISOLATED

LOAD

FROM mP OR

OTHER LOGIC

Figure 57. Level Shifter: Connects 12 or 24 Volt Circuits to Logic

+12 V

V

CC

OUT

IN

LOAD

Figure 58. Open Collector Inverter:

Inverts the Input Signal

Figure 59. Inexpensive, Unregulated Current Source

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18

MUN2211T1, SMUN2211T1, NSVMUN2211T1 Series

PACKAGE DIMENSIONS

SC−59

CASE 318D−04

ISSUE G

NOTES:

D

ꢁꢂ1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

ꢁꢂ2. CONTROLLING DIMENSION: MILLIMETER.

MILLIMETERS

INCHES

NOM

3

DIM

A

A1

b

c

D

E

e

L

MIN

1.00

0.01

0.35

0.09

2.70

1.30

1.70

0.20

2.50

NOM

1.15

0.06

0.43

0.14

2.90

1.50

1.90

0.40

2.80

MAX

1.30

0.10

0.50

0.18

3.10

1.70

2.10

0.60

3.00

MIN

MAX

0.051

0.004

0.020

0.007

0.122

0.067

0.083

0.024

0.118

E

H

E

2

1

0.039

0.001

0.014

0.003

0.106

0.051

0.067

0.008

0.099

0.045

0.002

0.017

0.005

0.114

0.059

0.075

0.016

0.110

b

e

H

E

C

STYLE 1:

A

PIN 1. EMITTER

2. BASE

3. COLLECTOR

L

A1

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

2.4

0.094

1.0

0.039

mm

inches

ǒ

Ǔ

SCALE 10:1

0.8

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

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Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

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Order Literature: http://www.onsemi.com/orderlit

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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

MUN2211T1/D

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19


型号：	SMUN2211T1
厂家：	ONSEMI
描述：	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN 开关光电二极管晶体管
文件：	总19页 (文件大小：221K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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