SMUN5114T3G [ONSEMI]
PNP Bipolar Digital Transistor (BRT);
| 型号： | SMUN5114T3G |
| 厂家： | 
ONSEMI |
| 描述： | PNP Bipolar Digital Transistor (BRT) 小信号双极晶体管 |
| 文件： | 总13页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTA114EET1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−75/SOT−416 package which is designed for low power
surface mount applications.
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PNP SILICON BIAS
RESISTOR TRANSISTORS
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
R1
Features
BASE
(INPUT)
R2
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
PIN 2
EMITTER
(GROUND)
• The SC−75/SOT−416 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
• Pb−Free Packages are Available
3
2
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Symbol
Value
50
Unit
Vdc
SC−75 (SOT−416)
CASE 463
V
V
CBO
CEO
STYLE 1
Collector-Emitter Voltage
Collector Current
50
Vdc
I
100
mAdc
C
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Total Device Dissipation, FR−4 Board
P
D
(Note 1) @ T = 25°C
Derate above 25°C
200
1.6
mW
mW/°C
A
xx M G
G
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
q
JA
600
°C/W
Total Device Dissipation, FR−4 Board
P
D
xx
=
Specific Device Code
xx = (Refer to page 2)
Date Code*
(Note 2) @ T = 25°C
Derate above 25°C
300
2.4
mW
mW/°C
A
M
G
=
=
Thermal Resistance, Junction−to−Ambient
(Note 2)
R
q
JA
400
°C/W
Pb−Free Package
(Note: Microdot may be in either location)
Junction and Storage Temperature Range
T , T
−55 to
+150
°C
*Date Code orientation may vary depending
upon manufacturing location.
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006 − Rev. 6
DTA114EET1/D
DTA114EET1 Series
ORDERING INFORMATION AND RESISTOR VALUES
†
Device
DTA114EET1
Marking
R1 (K)
R2 (K)
Package
Shipping
SC−75
3000 Tape & Reel
3000 Tape & Reel
6A
10
10
DTA114EET1G
SC−75
(Pb−Free)
DTA124EET1
SC−75
3000 Tape & Reel
3000 Tape & Reel
6B
6C
6D
6E
6F
6H
43
22
47
22
47
47
∞
DTA124EET1G
SC−75
(Pb−Free)
DTA144EET1
SC−75
3000 Tape & Reel
3000 Tape & Reel
DTA144EET1G
SC−75
(Pb−Free)
DTA114YET1
SC−75
3000 Tape & Reel
3000 Tape & Reel
10
DTA114YET1G
SC−75
(Pb−Free)
DTA114TET1
SC−75
3000 Tape & Reel
3000 Tape & Reel
10
DTA114TET1G
SC−75
(Pb−Free)
DTA143TET1
SC−75
3000 Tape & Reel
3000 Tape & Reel
4.7
2.2
4.7
4.7
22
∞
DTA143TET1G
SC−75
(Pb−Free)
DTA123EET1
SC−75
3000 Tape & Reel
3000 Tape & Reel
2.2
4.7
47
47
47
100
22
DTA123EET1G
SC−75
(Pb−Free)
DTA143EET1
SC−75
3000 Tape & Reel
3000 Tape & Reel
DTA143EET1G
SC−75
(Pb−Free)
DTA143ZET1
SC−75
3000 Tape & Reel
3000 Tape & Reel
6K
6L
DTA143ZET1G
SC−75
(Pb−Free)
DTA124XET1
SC−75
3000 Tape & Reel
3000 Tape & Reel
DTA124XET1G
SC−75
(Pb−Free)
DTA123JET1
SC−75
3000 Tape & Reel
3000 Tape & Reel
6M
6N
6P
2.2
100
47
DTA123JET1G
SC−75
(Pb−Free)
DTA115EET1
SC−75
3000 Tape & Reel
3000 Tape & Reel
DTA115EET1G
SC−75
(Pb−Free)
DTA144WET1
SC−75
3000 Tape & Reel
3000 Tape & Reel
DTA144WET1G
SC−75
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
DTA114EET1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V = 50 V, I = 0)
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CB
E
CBO
CEO
Collector−Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
Emitter−Base Cutoff Current
(V = 6.0 V, I = 0)
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
EBO
EB
C
Collector−Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
(BR)CEO
Collector−Emitter Breakdown Voltage (Note 3)
(I = 2.0 mA, I = 0)
C
B
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 4)
DC Current Gain
(V = 10 V, I = 5.0 mA)
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
h
FE
35
60
80
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
140
140
250
250
15
CE
C
80
160
160
8.0
15
80
80
80
80
80
27
140
130
140
150
140
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
−
−
0.25
Vdc
Vdc
C
E
(I = 10 mA, I = 5 mA)
DTA123EET1
C
B
(I = 10 mA, I = 1 mA)
DTA114TET1/DTA143TET1
DTA143ZET1/DTA124XET1
DTA143EET1
C
B
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
OL
DTA114EET1
DTA124EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA144EET1
DTA115EET1
DTA144WET1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 5.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 4.0 V, R = 1.0 kW)
CC
B
L
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
DTA114EET1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
A
Characteristic
ON CHARACTERISTICS (Note 6)
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kW)
V
OH
4.9
−
−
Vdc
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)
DTA114TET1
CC
B
L
DTA143TET1
DTA123EET1
DTA143EET1
Input Resistor
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
kW
15.4
1.54
70
32.9
Resistor Ratio
R /R
1
−
2
DTA114EET1/DTA124EET1
DTA144EET1/DTA115EET1
DTA114YET1
DTA114TET1/DTA143TET1
DTA123EET1/DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA144WET1
0.8
0.17
−
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
0.8
1.2
0.055
0.38
0.038
1.7
0.185
0.56
0.056
2.6
6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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4
DTA114EET1 Series
250
200
150
100
50
R
q
JA
= 600°C/W
0
−ꢀ50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 2. Normalized Thermal Response
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5
DTA114EET1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EET1
1000
1
V
= 10 V
CE
I /I = 10
C B
T ꢁ=ꢁ75°C
A
T ꢁ=ꢁ−25°C
A
25°C
ꢀ0.1
100
−25°C
25°C
75°C
ꢀ0.01
10
ꢀ20
I , COLLECTOR CURRENT (mA)
1
10
100
0
ꢀ40
50
I , COLLECTOR CURRENT (mA)
C
C
Figure 3. VCE(sat) versus IC
Figure 4. DC Current Gain
4
3
100
10
1
25°C
75°C
f = 1 MHz
l = 0 V
E
T ꢁ=ꢁ−25°C
A
T = 25°C
A
2
1
0
ꢀ0.1
ꢀ0.01
V
= 5 V
O
ꢀ0.001
0
10
20
30
40
50
0
1
ꢀ2
3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
ꢀ9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 5. Output Capacitance
Figure 6. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢁ=ꢁ−25°C
A
10
25°C
75°C
1
ꢀ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 7. Input Voltage versus Output Current
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6
DTA114EET1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTA123EET1
1
1000
V
= 10 V
CE
I /I = 10
C B
75°C
100
0.1
−25°C
75°C
25°C
25°C
0.01
10
1
T = −25°C
A
0.001
0
5
10
15
20
25
30
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 8. VCE(sat) versus IC
Figure 9. DC Current Gain
12
10
8
100
10
1
f = 1 MHz
l = 0 V
E
75°C
T = 25°C
A
25°C
6
T = −25°C
A
0.1
4
0.01
2
V
= 5 V
O
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 10. Output Capacitance
Figure 11. Output Current versus Input Voltage
10
T = −25°C
A
1
75°C
25°C
V
= 0.2 V
O
0.1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 12. Input Voltage versus Output Current
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7
DTA114EET1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTA124EET1
1000
10
V
= 10 V
CE
I /I = 10
C B
T ꢁ=ꢁ75°C
A
1
25°C
25°C
T ꢁ=ꢁ−25°C
A
−25°C
100
75°C
ꢀ0.1
10
0.01
1
10
I , COLLECTOR CURRENT (mA)
0
ꢀ20
I , COLLECTOR CURRENT (mA)
ꢀ40
ꢀ50
100
C
C
Figure 13. VCE(sat) versus IC
Figure 14. DC Current Gain
4
3
2
100
25°C
75°C
f = 1 MHz
l = 0 V
T ꢁ=ꢁ−25°C
A
E
10
1
T = 25°C
A
ꢀ0.1
1
0
ꢀ0.01
V
= 5 V
ꢀ9
O
ꢀ0.001
0
1
ꢀ2
ꢀ3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
10
0
10
20
30
40
50
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 15. Output Capacitance
Figure 16. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢁ=ꢁ−25°C
A
10
25°C
75°C
1
ꢀ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 17. Input Voltage versus Output Current
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8
DTA114EET1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTA144EET1
1
1000
I /I = 10
C B
T ꢁ=ꢁ75°C
A
T ꢁ=ꢁ−25°C
A
25°C
25°C
75°C
−25°C
100
ꢀ0.1
ꢀ0.01
10
0
10
20
30
40
1
10
I , COLLECTOR CURRENT (mA)
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 18. VCE(sat) versus IC
Figure 19. DC Current Gain
1
100
25°C
−25°C
T ꢁ=ꢁ75°C
A
f = 1 MHz
l = 0 V
E
0.8
10
1
T = 25°C
A
0.6
0.4
ꢀ0.1
ꢀ0.01
0.2
0
V
= 5 V
ꢀ5
O
ꢀ0.001
0
10
20
30
40
50
0
1
2
3
ꢀ4
ꢀ6
ꢀ7
ꢀ8
ꢁ9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 20. Output Capacitance
Figure 21. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢁ=ꢁ−25°C
A
25°C
75°C
10
1
ꢁ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 22. Input Voltage versus Output Current
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9
DTA114EET1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114YET1
1
180
T ꢁ=ꢁ75°C
A
I /I = 10
C B
V
= 10 V
CE
160
140
120
100
80
T ꢁ=ꢁ−25°C
A
25°C
−25°C
25°C
0.1
75°C
0.01
60
40
20
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 23. VCE(sat) versus IC
Figure 24. DC Current Gain
4.5
4
100
10
1
T ꢁ=ꢁ75°C
f = 1 MHz
l = 0 V
A
25°C
E
3.5
3
T = 25°C
A
−25°C
2.5
2
1.5
1
0.5
0
V
= 5 V
O
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 25. Output Capacitance
Figure 26. Output Current versus Input Voltage
10
+12 V
V
= 0.2 V
25°C
O
T ꢁ=ꢁ−25°C
A
75°C
Typical Application
for PNP BRTs
1
LOAD
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 27. Input Voltage versus Output Current
Figure 28. Inexpensive, Unregulated Current Source
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10
DTA114EET1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — DTA115EET1
1
1000
75°C
T = −25°C
A
100
25°C
0.1
75°C
25°C
10
1
−25°C
V
= 10 V
I /I = 10
CE
C
B
0.01
0
1
2
3
4
5
6
7
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 29. Maximum Collector Voltage versus
Collector Current
Figure 30. DC Current Gain
100
10
1.2
25°C
75°C
1.0
0.8
0.6
0.4
f = 1 MHz
I
= 0 V
E
T = −25°C
A
T = 25°C
A
1
0.2
0
V
= 5 V
8
O
0.1
0
1
2
3
4
5
6
7
9
10
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 31. Output Capacitance
Figure 32. Output Current versus Input Voltage
100
T = −25°C
A
25°C
10
V
= 0.2 V
O
75°C
1
0
2
4
6
8
10 12
14
16 18 20
I , COLLECTOR CURRENT (mA)
C
Figure 33. Input Voltage versus Output Current
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11
DTA114EET1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — DTA144WET1
1
1000
75°C
T = −25°C
A
75°C
T = −25°C
A
0.1
100
25°C
25°C
V
= 10 V
CE
I /I = 10
C
B
0.01
10
0
5
10 15
20 25 30 35 40 45 50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 34. Maximum Collector Voltage versus
Collector Current
Figure 35. DC Current Gain
100
10
1
1.4
75°C
f = 1 MHz
1.2
1.0
0.8
0.6
0.4
I
= 0 V
E
T = −25°C
A
T = 25°C
A
25°C
0.1
0.01
V
= 5 V
O
0.2
0
0.001
0
1
2
3
4
5
6
7
8
9
10 11
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 36. Output Capacitance
Figure 37. Output Current versus Input Voltage
100
V
= 0.2 V
O
T = −25°C
A
10
75°C
25°C
1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 38. Input Voltage versus Output Current
http://onsemi.com
12
DTA114EET1 Series
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE F
NOTES:
−E−
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN NOM MAX MIN
0.70
A1 0.00
INCHES
NOM MAX
3
e
−D−
A
0.80
0.05
0.90 0.027 0.031 0.035
0.10 0.000 0.002 0.004
0.30 0.006 0.008 0.012
0.25 0.004 0.006 0.010
1.65 0.059 0.063 0.067
0.90 0.027 0.031 0.035
0.04 BSC
1
b 3 PL
0.20 (0.008)
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
1.60
M
D
H
0.20 (0.008) E
E
L
0.10
1.50
0.20 0.004 0.006 0.008
1.70 0.061 0.063 0.065
H
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
L
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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