SNSS35200MR6T1G [ONSEMI]

低饱和压晶体管，PNP，35 V，5.0 A;


型号：	SNSS35200MR6T1G
厂家：	ONSEMI
描述：	低饱和压晶体管，PNP，35 V，5.0 A 开关光电二极管小信号双极晶体管
文件：	总6页 (文件大小：65K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NSS35200MR6T1G

35 V, 5 A, Low V_CE(sat)

PNP Transistor

ON Semiconductor’s e PowerEdge family of low V

CE(sat)

transistors are miniature surface mount devices featuring ultra low

saturation voltage (V ) and high current gain capability. These

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

CE(sat)

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35 VOLTS

5.0 AMPS

PNP LOW V_CE(sat)TRANSISTOR

EQUIVALENT R_DS(on)100 mW

Typical application are DC−DC converters and power management

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e PowerEdge devices to be

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

COLLECTOR

1, 2, 5, 6

BASE

• This is a Pb−Free Device

MAXIMUM RATINGS (T = 25°C)

EMITTER

Rating

Symbol

Max

−35

Unit

Vdc

Adc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

CEO

CBO

EBO

−55

−5.0

−2.0

−5.0

Collector Current − Continuous

Collector Current − Peak

Electrostatic Discharge

TSOP−6

CASE 318G

STYLE 6

ESD

HBM Class 3

MM Class C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

DEVICE MARKING

VS8

VS8 = Specific Device Code

= Date Code

ORDERING INFORMATION

†

Device

Package

Shipping

NSS35200MR6T1G TSOP−6 3000/Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

June, 2005 − Rev. 0

NSS35200MR6/D

NSS35200MR6T1G

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

(Note 1)

625

T = 25°C

Derate above 25°C

5.0

mW/°C

°C/W

Thermal Resistance,

Junction−to−Ambient

(Note 1)

200

Total Device Dissipation

(Note 2)

1.0

T = 25°C

Derate above 25°C

8.0

mW/°C

°C/W

Thermal Resistance,

Junction−to−Ambient

120

Thermal Resistance,

Junction−to−Lead #1

1.75

°C/W

Total Device Dissipation

(Single Pulse < 10 sec.)

Dsingle

(Notes 2 & 3)

Junction and Storage

Temperature Range

T , T

−55 to +150

°C

stg

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 X 1.0 inch Pad.

3. Refer to Figure 9.

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NSS35200MR6T1G

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typical

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I = −10 mAdc, I = 0)

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

−35

−55

−5.0

−

−45

−65

−

Collector−Base Breakdown Voltage

(I = −0.1 mAdc, I = 0)

Emitter−Base Breakdown Voltage

(I = −0.1 mAdc, I = 0)

Vdc

−7.0

−

Collector Cutoff Current

(V = −35 Vdc, I = 0)

mAdc

CBO

−0.03

−0.01

−0.1

Collector−Emitter Cutoff Current

(V = −35 Vdc)

CES

EBO

−

CES

Emitter Cutoff Current

(V = −4.0 Vdc)

−

ON CHARACTERISTICS

DC Current Gain (Note 4)

(I = −1.0 A, V = −1.5 V)

100

200

−

400

−

(I = −1.5 A, V = −1.5 V)

(I = −2.0 A, V = −3.0 V)

Collector−Emitter Saturation Voltage (Note 4)

(I = −0.8 A, I = −0.008 A)

CE(sat)

−

−0.125

−0.175

−0.260

−0.15

−0.20

−0.31

(I = −1.2 A, I = −0.012 A)

(I = −2.0 A, I = −0.02 A)

Base−Emitter Saturation Voltage (Note 4)

(I = −1.2 A, I = −0.012 A)

BE(sat)

−

−0.68

−0.81

−0.85

Base−Emitter Turn−on Voltage (Note 4)

(I = −2.0 A, V = −3.0 V)

BE(on)

−0.875

Cutoff Frequency

(I = −100 mA, V = −5.0 V, f = 100 MHz)

MHz

100

−

650

100

−

Input Capacitance (V = −0.5 V, f = 1.0 MHz)

Cibo

600

Output Capacitance (V = −3.0 V, f = 1.0 MHz)

Cobo

−

Turn−on Time (V = −10 V, I = −100 mA, I = −1 A, R = 3 W)

−

off

Turn−off Time (V = −10 V, I = I = −100 mA, I = 1 A, R = 3 W)

−

225

−

4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

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NSS35200MR6T1G

0.25

I /I = 50

C B

0.1

0.20

0.15

0.10

I /I = 100

C B

100°C

25°C

−55°C

0.01

0.05

0.001

0.01

0.1

1.0

0.001

0.01

0.1

1.0

I , COLLECTOR CURRENT (AMPS)

Figure 1. Collector Emitter Saturation Voltage

versus Collector Current

Figure 2. Collector Emitter Saturation Voltage

versus Collector Current

1.6

1.4

1.2

1.0

0.8

0.6

0.4

1.0

0.8

0.6

0.4

100°C

25°C

−55°C

25°C

100°C

−55°C

0.2

0.001

0.01

0.1

1.0

0.001

0.01

0.1

1.0

I , COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain versus

Collector Current

Figure 4. Base Emitter Saturation Voltage

versus Collector Current

1.1

1.0

0.9

0.8

0.7

0.6

0.5

750

700

650

600

550

500

450

400

100°C

25°C

−55°C

0.4

0.3

350

300

0.001

0.01

0.1

1.0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

I , COLLECTOR CURRENT (AMPS)

, EMITTER BASE VOLTAGE (VOLTS)

Figure 5. Base Emitter Turn−On Voltage

versus Collector Current

Figure 6. Input Capacitance

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NSS35200MR6T1G

225

200

175

150

125

100

1 s 100 ms 10 ms

1 ms

100 ms

1.0

0.1

SINGLE PULSE AT T = 25°C

amb

0.01

0.1

1.0

100

5.0

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

, COLLECTOR BASE VOLTAGE (VOLTS)

Figure 7. Output Capacitance

Figure 8. Safe Operating Area

1.0

0.1

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

0.001

0.00001

0.0001

0.001

0.01

0.1

t, TIME (sec)

1.0

100

1000

Figure 9. Normalized Thermal Response

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NSS35200MR6T1G

PACKAGE DIMENSIONS

TSOP−6

CASE 318G−02

ISSUE P

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. DIMENSIONS A AND B DO NOT INCLUDE

MOLD FLASH, PROTRUSIONS, OR GATE

BURRS.

MILLIMETERS

INCHES

DIM

MIN

0.90

0.01

0.25

0.10

2.90

1.30

0.85

0.20

2.50

0°

NOM

1.00

0.06

0.38

0.18

3.00

1.50

0.95

0.40

2.75

−

MAX

MIN

0.035

0.001

0.010

0.004

0.114

0.051

0.034

0.008

0.099

0°

NOM

0.039

0.002

0.014

0.007

0.118

0.059

0.037

0.016

0.108

−

MAX

0.043

0.004

0.020

0.010

0.122

0.067

0.041

0.024

0.118

10°

1.10

0.10

0.50

0.26

3.10

1.70

1.05

0.60

3.00

10°

0.05 (0.002)

STYLE 6:

PIN 1. COLLECTOR

2. COLLECTOR

3. BASE

4. EMITTER

5. COLLECTOR

6. COLLECTOR

SOLDERING FOOTPRINT*

2.4

0.094

0.95

0.037

1.9

0.075

0.95

0.037

0.7

0.028

1.0

inches

0.039

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

NSS35200MR6/D

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SNSS35200MR6T1G [ONSEMI]

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