SPZT751T1G [ONSEMI]
高电流 PNP 双极晶体管;
| 型号： | SPZT751T1G |
| 厂家： | 
ONSEMI |
| 描述： | 高电流 PNP 双极晶体管 小信号双极晶体管 |
| 文件： | 总6页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PZT751T1
Preferred Device
PNP Silicon Planar
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in
industrial and consumer applications. The device is housed in the
SOT−223 package which is designed for medium power surface
mount applications.
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Features
• High Current: 2.0 A
• The SOT−223 Package can be soldered using wave or reflow.
• SOT−223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
SOT−223 PACKAGE
HIGH CURRENT
PNP SILICON TRANSISTOR
SURFACE MOUNT
COLLECTOR 2, 4
• NPN Complement is PZT651T1
• Pb−Free Package is Available
BASE
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
EMITTER 3
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Symbol
Value
60
Unit
Vdc
Vdc
Vdc
Adc
MARKING
DIAGRAM
V
CEO
V
80
CBO
EBO
V
5.0
2.0
TO−261AA
D
I
C
CASE 318E
ZT 751
STYLE 1
(1)
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
D
0.8
6.4
W
mW/°C
A
Storage Temperature Range
Junction Temperature
T
−65 to 150
°C
°C
stg
ZT 751 = Specific Device Code
T
150
J
D
= Date Code
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
ORDERING INFORMATION
Thermal Resistance from Junction−to−
Ambient in Free Air
R
156
°C/W
q
JA
Device
Package
Shipping
PZT751T1
SOT−223
1000 / Tape & Reel
1000 / Tape & Reel
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
T
L
260
10
°C
PZT751T1G
SOT−223
(Pb−Free)
Sec
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum
recommended footprint.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
January, 2004 − Rev. 4
PZT751T1/D
PZT751T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
60
80
5.0
−
−
−
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 10 mAdc, I = 0)
C
B
Collector−Emitter Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
−
Vdc
E
C
Base−Emitter Cutoff Current
(V = 4.0 Vdc)
EB
I
0.1
100
mAdc
nAdc
EBO
Collector−Base Cutoff Current
I
−
CBO
(V = 80 Vdc, I = 0)
CB
E
ON CHARACTERISTICS (Note 2)
DC Current Gain
C
h
FE
−
(I = 50 mAdc, V = 2.0 Vdc)
75
75
75
40
−
−
−
−
CE
(I = 500 mAdc, V = 2.0 Vdc)
C
CE
(I = 1.0 Adc, V = 2.0 Vdc)
C
CE
(I = 2.0 Adc, V = 2.0 Vdc)
C
CE
Collector−Emitter Saturation Voltages
(I = 2.0 Adc, I = 200 mAdc)
V
Vdc
CE(sat)
−
−
0.5
0.3
C
B
(I = 1.0 Adc, I = 100 mAdc)
C
B
Base−Emitter Voltages
(I = 1.0 Adc, V = 2.0 Vdc)
V
−
1.0
1.2
−
Vdc
Vdc
MHz
BE(on)
C
CE
Base−Emitter Saturation Voltage
(I = 1.0 Adc, I = 100 mAdc)
V
−
BE(sat)
C
B
Current−Gain−Bandwidth
(I = 50 mAdc, V = 5.0 Vdc, f = 100 MHz)
f
T
75
C
CE
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
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2
PZT751T1
NPN
PNP
300
270
250
225
T = 125°C
J
V
CE
= −2.0 V
V
CE
= 2.0 V
T = 125°C
J
240
210
200
175
150
125
100
75
25°C
180
150
120
90
25°C
−ꢀ55°C
−ꢀ55°C
60
50
30
25
0
0
10
20
50 100 200
500 1.0 A 2.0 A 4.0 A
−10 −ꢀ20
−ꢀ50 −100 −ꢀ200 −ꢀ500 −1.0 A −2.0 A −4.0 A
I , COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
C
Figure 1. Typical DC Current Gain
NPN
Figure 2. Typical DC Current Gain
PNP
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−2.0
−1.8
−1.6
−1.4
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
0
V
@ I /I = 10
C B
BE(sat)
V
@ I /I = 10
C B
BE(sat)
V
BE(on)
@ V = 2.0 V
CE
V
BE(on)
@ V = 2.0 V
CE
V
@ I /I = 10
C B
CE(sat)
V
@ I /I = 10
C B
CE(sat)
50
100
200
500
1.0 A
2.0 A
4.0 A
−50
−100
−200
−500 −1.0 A −2.0 A −4.0 A
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. On Voltages
Figure 4. On Voltages
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3
PZT751T1
NPN
PNP
1.0
0.9
0.8
0.7
−1.0
−0.9
−0.8
−0.7
T = 25°C
J
T = 25°C
J
0.6
0.5
0.4
0.3
0.2
0.1
0
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
0
I
C
= 10 mA
I
C
= 100 mA
I
C
= 500 mA
I
C
= 2.0 A
I
= −500 mA
I = −2.0 A
C
C
I
C
= −10 mA
I
C
= −100 mA
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100 200 500
−0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100−200 −500
I , BASE CURRENT (mA)
B
I , BASE CURRENT (mA)
B
Figure 5. Collector Saturation Region
NPN
Figure 6. Collector Saturation Region
PNP
10
−10
4.0
2.0
1.0
−4.0
−2.0
−1.0
100 ms
100 ms
1.0 ms
1.0 ms
MPS65
MPS75
0
MPS65
0.5
−0.5
0
MPS75
1
0.2
0.1
−0.2
−0.1
1
T = 25°C
A
T = 25°C
A
T
= 25°C
T = 25°C
C
C
0.05
−0.05
WIRE LIMIT
WIRE LIMIT
THERMAL LIMIT
THERMAL LIMIT
0.02
0.01
−0.02
−0.01
SECOND BREAKDOWN LIMIT
5.0 10 20
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
SECOND BREAKDOWN LIMIT
−5.0 −10 −20
V , COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
1.0
2.0
50
100
−1.0
−2.0
−50
−100
V
CE
Figure 7. Safe Operating Area
Figure 8. Safe Operating Area
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4
PZT751T1
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE K
NOTES:
A
F
ꢁꢂ1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
ꢁꢂ2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
MIN
6.30
3.30
1.50
0.60
2.90
2.20
MAX
6.70
3.70
1.75
0.89
3.20
2.40
0.100
0.35
2.00
1.05
10
4
2
A
B
C
D
F
0.249
0.130
0.060
0.024
0.115
0.087
0.263
0.145
0.068
0.035
0.126
0.094
S
B
1
3
G
H
J
0.0008 0.0040 0.020
D
0.009
0.060
0.033
0
0.014
0.078
0.041
10
0.24
1.50
0.85
0
K
L
L
G
M
S
J
_
_
_
_
0.264
0.287
6.70
7.30
C
STYLE 1:
PIN 1. BASE
0.08 (0003)
M
H
2. COLLECTOR
3. EMITTER
4. COLLECTOR
K
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
ǒ
Ǔ
1.5
0.059
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
PZT751T1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION
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Order Literature: http://www.onsemi.com/litorder
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Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
PZT751T1/D
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