SS25 [ONSEMI]

2.0 A 肖特基势垒整流器;
SS25
型号: SS25
厂家: ONSEMI    ONSEMI
描述:

2.0 A 肖特基势垒整流器

光电二极管
文件: 总6页 (文件大小:65K)
中文:  中文翻译
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SS22, SS24  
Surface Mount  
Schottky Power Rectifier  
SMB Power Surface Mount Package  
These devices employ the Schottky Barrier principle in a  
metal−to−silicon power rectifier. Features epitaxial construction with  
oxide passivation and metal overlay contact. Ideally suited for low  
voltage, high frequency switching power supplies; free wheeling  
diodes and polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
Features  
2 AMPERES  
20, 40 VOLTS  
Compact Package with J−Bend Leads Ideal for Automated Handling  
Highly Stable Oxide Passivated Junction  
Guardring for Over−Voltage Protection  
Low Forward Voltage Drop  
Pb−Free Package is Available  
Mechanical Characteristics  
Case: Molded Epoxy  
SMB  
CASE 403A  
PLASTIC  
Epoxy Meets UL 94 V−0 @ 0.125 in  
Weight: 95 mg (approximately)  
Cathode Polarity Band  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
MARKING DIAGRAM  
Available in 12 mm Tape, 2500 Units per 13 in Reel, Add “T3”  
Suffix to Part Number  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
AYWW  
SS2xG  
G
ESD Ratings: Machine Model = C  
ESD Ratings: Human Body Model = 3B  
SS2x  
x
= Specific Device Code  
= 2 or 4  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
SS22T3  
Package  
SMB  
Shipping  
2500/Tape & Reel  
2500/Tape & Reel  
2500/Tape & Reel  
SS24T3  
SMB  
SS24T3G  
SMB  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
July, 2005 − Rev. 2  
SS24/D  
SS22, SS24  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
V
RWM  
SS22  
SS24  
V
20  
40  
R
Average Rectified Forward Current  
I
2.0  
A
A
O
(At Rated V , T = 100°C)  
R
L
Peak Repetitive Forward Current  
I
FRM  
3.0  
(At Rated V , Square Wave,  
R
100 kHz, T = 105°C)  
C
Non−Repetitive Peak Surge Current  
I
75  
A
FSM  
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)  
Storage/Operating Case Temperature  
T
, T  
−55 to +150  
−55 to +125  
10,000  
°C  
°C  
stg  
C
Operating Junction Temperature  
T
J
Voltage Rate of Change  
dv/dt  
V/ms  
(Rated V , T = 25°C)  
R
J
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit  
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,  
damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance,  
Junction−to−Lead (Note 1)  
Thermal Resistance,  
°C/W  
R
24  
80  
q
JL  
Junction−to−Ambient (Note 2)  
R
q
JA  
ELECTRICAL CHARACTERISTICS  
v
I
T = 25°C  
T = 125°C  
V
F
J
J
Maximum Instantaneous Forward Voltage (Note 3)  
see Figure 2  
0.50  
0.46  
(i = 2.0 A)  
F
T = 25°C  
J
T = 100°C  
J
mA  
R
Maximum Instantaneous Reverse Current (Note 3)  
see Figure 4  
0.4  
5.7  
(V = 40 V)  
R
1. Mounted with minimum recommended pad size, PC Board FR4.  
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.  
3. Pulse Test: Pulse Width 250 ms, Duty Cycle 2.0%.  
http://onsemi.com  
2
 
SS22, SS24  
100  
10  
100  
10  
T = 125°C  
J
T = 125°C  
J
25°C  
1.0  
0.1  
1.0  
0.1  
100°C  
100°C  
−ꢀ40°C  
25°C  
0.1  
0.3  
0.5  
0.7  
0.9  
0.1  
0.3  
0.5  
0.7  
0.9  
v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)  
F
V , MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)  
F
Figure 1. Typical Forward Voltage  
Figure 2. Maximum Forward Voltage  
100E−3  
10E−3  
1.0E−3  
100E−6  
10E−6  
1.0E−6  
100E−3  
10E−3  
1.0E−3  
100E−6  
10E−6  
1.0E−6  
T = 125°C  
J
T = 125°C  
J
100°C  
25°C  
100°C  
25°C  
0
10  
20  
30  
40  
0
10  
20  
30  
40  
V , REVERSE VOLTAGE (VOLTS)  
R
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 3. Typical Reverse Current  
Figure 4. Maximum Reverse Current  
2.5  
2.0  
1.5  
1.0  
1.2  
1.0  
0.8  
0.6  
0.4  
FREQ = 20 kHz  
dc  
SQUARE WAVE  
dc  
Ipk/Io = p  
SQUARE WAVE  
Ipk/Io = 5.0  
Ipk/Io = 10  
Ipk/Io = p  
Ipk/Io = 5.0  
Ipk/Io = 20  
Ipk/Io = 10  
Ipk/Io = 20  
0.5  
0
0.2  
0
25  
45  
65  
85  
105  
125  
0
0.5  
1.0  
1.5  
2.0  
2.5  
T , LEAD TEMPERATURE (°C)  
L
I , AVERAGE FORWARD CURRENT (AMPS)  
O
Figure 5. Current Derating  
Figure 6. Forward Power Dissipation  
http://onsemi.com  
3
SS22, SS24  
1000  
125  
115  
105  
95  
R
= 24°C/W  
tja  
T = 25°C  
J
43°C/W  
63°C/W  
100  
80°C/W  
85  
93°C/W  
75  
65  
10  
0
5.0  
10  
15  
20  
25  
30  
35  
40  
0
5.0  
10  
15  
20  
25  
30  
35  
40  
V , REVERSE VOLTAGE (VOLTS)  
R
V , DC REVERSE VOLTAGE (VOLTS)  
R
Figure 7. Capacitance  
Figure 8. Typical Operating Temperature Derating*  
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-  
verse voltage conditions. Calculations of T therefore must include forward and reverse power effects. The allowable operating  
J
T may be calculated from the equation:  
J
T = T  
J
− r(t)(Pf + Pr) where  
Jmax  
r(t) = thermal impedance under given conditions,  
Pf = forward power dissipation, and  
Pr = reverse power dissipation  
This graph displays the derated allowable T due to reverse bias under DC conditions only and is calculated as T = T  
− r(t)Pr,  
J
J
Jmax  
where r(t) = Rthja. For other power applications further calculations must be performed.  
1.0E+00  
1.0E−01  
1.0E−02  
50%  
20%  
10%  
5.0%  
2.0%  
1.0%  
1.0E−03  
1.0E−04  
R
= R  
tjl*r(t)  
tjl(t)  
0.00001  
0.0001  
0.001  
0.01  
0.1  
t, TIME (s)  
1.0  
10  
100  
1000  
Figure 9. Thermal Response — Junction to Case  
1.0E+00  
1.0E−01  
1.0E−02  
50%  
20%  
10%  
5.0%  
2.0%  
1.0%  
1.0E−03  
1.0E−04  
R
= R  
tjl*r(t)  
tjl(t)  
0.00001  
0.0001  
0.001  
0.01  
0.1  
t, TIME (s)  
1.0  
10  
100  
1000  
Figure 10. Thermal Response — Junction to Ambient  
http://onsemi.com  
4
SS22, SS24  
PACKAGE DIMENSIONS  
SMB  
CASE 403A−03  
ISSUE E  
H
E
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
E
2. CONTROLLING DIMENSION: INCH.  
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.  
MILLIMETERS  
INCHES  
DIM  
A
A1  
b
c
D
MIN  
1.90  
0.05  
1.96  
0.15  
3.30  
4.06  
5.21  
0.76  
NOM  
2.13  
0.10  
2.03  
0.23  
3.56  
4.32  
5.44  
1.02  
MAX  
MIN  
NOM  
0.084  
0.004  
0.080  
0.009  
0.140  
0.170  
0.214  
0.040  
MAX  
0.095  
0.006  
0.083  
0.012  
0.150  
0.180  
0.220  
0.050  
2.41  
0.15  
2.11  
0.30  
3.81  
4.57  
5.59  
1.27  
0.075  
0.002  
0.077  
0.006  
0.130  
0.160  
0.205  
0.030  
b
D
E
H
E
L
0.51 REF  
L1  
0.020 REF  
A
A1  
c
L
L1  
SOLDERING FOOTPRINT*  
2.261  
0.089  
2.743  
0.108  
2.159  
0.085  
mm  
inches  
ǒ
Ǔ
SCALE 8:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
5
SS22, SS24  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
SS24/D  

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