SS8050DTA [ONSEMI]
NPN外延硅晶体管;
| 型号： | SS8050DTA |
| 厂家： | 
ONSEMI |
| 描述： | NPN外延硅晶体管 放大器 晶体管 |
| 文件： | 总6页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
NPN Epitaxial Silicon
Transistor
TO−92−3
CASE 135AN
SS8050
1
2
3
Features
• 2 W Output Amplifier of Portable Radios in Class B Push−Pull
Operation
• Complementary to SS8550
TO−92−3
CASE 135AR
• Collector Current: I = 1.5 A
C
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
2
3
Compliant
1. Emitter
2. Base
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
3. Collector
Parameter
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Symbol
Value
Unit
V
V
CBO
V
CEO
V
EBO
40
MARKING DIAGRAM
25
6
V
V
AS8
050x
YWW
I
C
1.5
A
Junction Temperature
Storage Temperature
T
J
150
°C
°C
T
STG
−65 to 150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
S8050x
= Specific Device Code
Line 1: A = Assembly Location
Line 2: x = B, C or D
Line 3: Y = Year
THERMAL CHARACTERISTICS (Note 1)
(T = 25°C unless otherwise noted)
A
WW= Work Week
Parameter
Power Dissipation
Symbol
Value
1
Unit
W
P
D
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Derate Above 25°C
8
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient
R
125
q
JA
1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)
with minimum land pattern size.
© Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
February, 2022 − Rev. 2
SS8050/D
SS8050
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
Conditions
= 100 mA, I = 0
Min.
40
25
6
Typ.
Max.
Unit
V
BV
BV
BV
I
I
CBO
CEO
EBO
C
E
= 2 mA, I = 0
V
C
B
I
= 100 mA, I = 0
V
E
C
I
V
= 35 V, I = 0
100
100
nA
nA
CBO
CB
EB
CE
CE
CE
E
I
Emitter Cut−Off Current
V
V
V
V
= 6 V, I = 0
C
EBO
h
FE1
h
FE2
h
FE3
DC Current Gain
= 1 V, I = 5 mA
45
85
40
C
= 1 V, I = 100 mA
300
C
= 1 V, I = 800 mA
C
V
V
(sat)
(sat)
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Base−Emitter On Voltage
I
I
= 800 mA, I = 80 mA
0.5
1.2
1
V
V
CE
BE
C
C
B
= 800 mA, I = 80 mA
B
V
(on)
V
V
V
= 1 V, I = 10 mA
V
BE
CE
CB
CE
C
C
ob
f
T
Output Capacitance
= 10 V, I = 0, f = 1 MHz
9.0
pF
MHz
E
Current Gain Bandwidth Product
= 10 V, I = 50 mA
100
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
hFE CLASSIFICATION
Classification
B
C
D
h
FE2
85 ~ 160
120 ~ 200
160 ~ 300
ORDERING INFORMATION
Part Number
Top Mark
S8050B
S8050C
S8050C
S8050D
S8050D
Package
Shipping
SS8050BBU
TO−92−3, case 135AN (Pb−Free)
TO−92−3, case 135AN (Pb−Free)
TO−92−3, case 135AR (Pb−Free)
TO−92−3, case 135AN (Pb−Free)
TO−92−3, case 135AR (Pb−Free)
10,000 Units/ Bulk Box
10,000 Units/ Bulk Box
2,000 Units/ Fan−Fold
10,000 Units/ Bulk Box
2,000 Units/ Fan−Fold
SS8050CBU
SS8050CTA
SS8050DBU
SS8050DTA
www.onsemi.com
2
SS8050
TYPICAL PERFORMANCE CHARACTERISTICS
0.5
0.4
0.3
0.2
0.1
1000
VCE = 1V
IB = 3.0 mA
IB = 2.5 mA
100
IB = 2.0 mA
IB = 1.5 mA
10
IB = 1.0 mA
IB = 0.5 mA
1
0.1
0
0.4
0.8
1.2
1.6
2.0
1
10
100
1000
I , COLLECTOR CURRENT [mA]
C
V , COLLECTOR−EMITTER VOLTAGE [V]
CE
Figure 1. Static Characteristic
Figure 2. DC Current Gain
10000
1000
100
10
1
IC = 10 IB
VCE = 1V
VBE(sat)
100
10
VCE(sat)
0.1
0.1
1
10
100
1000
0
0.2
, BASE−EMITTER VOLTAGE [V]
BE
0.4
0.6
0.8
1.0
1.2
I , COLLECTOR CURRENT [mA]
V
C
Figure 3. Base−Emitter Saturation Voltage and
Collector−Emitter Saturation Voltage
Figure 4. Base−Emitter On Voltage
1000
100
1000
VCE = 10V
f = 1 MHz
IE = 0
100
10
1
10
1
1
10
100
1
10
100
400
V , COLLECTOR−BASE VOLTAGE [V]
CB
I , COLLECTOR CURRENT [mA]
C
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
www.onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.825x4.76
CASE 135AN
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13880G
TO−92 3 4.825X4.76
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.83x4.76 LEADFORMED
CASE 135AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
TO−92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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