STK984-190-E_16 [ONSEMI]
MOSFET Power Module 40 V, 30 A, Compact DIP;
| 型号： | STK984-190-E_16 |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET Power Module 40 V, 30 A, Compact DIP |
| 文件： | 总11页 (文件大小：698K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STK984-190-E
MOSFET Power Module
40 V, 30 A, Compact DIP
The STK984-190-E is a MOSFET power module containing 6 MOSFETs
in a three-phase bridge (B6) configuration and a seventh MOSFET used
as a reverse battery protection switch. The compact module is 29.6 mm
18.2 mm and is 4.3 mm high (see package drawing for specification
details). The MOSFET module uses a DBC substrate for excellent
thermal performance. The module is suitable for 12 V automotive and
industrial applications with motors rated up to 300 W.
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PACKAGE PICTURE
Features
Three-phase MOSFET bridge with reverse battery protection switch
Device is PPAP capable.
Compact 29.6 mm 18.2 mm dual in-line package
Motor power up to 300 W for 12 V systems
40 V MOSFETs with 30 A continuous and 85 A pulse current ratings
RDS(ON) = 9.5 m max
QGD = 9.8 nC typical
Typical Applications
Automotive Pumps
Automotive Fans
MARKING DIAGRAM
12 V Industrial Motors
STK984-190-E = Specific Device Code
A = Year
B = Month
C = Production Site
DD = Factory Lot Code
Device marking is on package underside
ORDERING INFORMATION
Shipping
(Qty / Packing)
Device
Package
MODULE SPCM24
29.6x18.2 DIP S3
(Pb-Free)
STK984-190-E
16 / Tube
Figure 1: Functional Diagram
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
June 2016 - Rev. 0
STK984-190-E/D
STK984-190-E
VBAT
VS CHP
CP1P
VGL
CP2P
CP1N
CP2N
LV8907
STK984-190
VCC
V3RI
V3RO
COM
WH
VH
PWMIN
LIN_PWMIN
TXD
UH
WOUT
VOUT
UOUT
WL
RXD
CSB
SCLK
SI
VL
SO
EN
UL
PWMIN
FG
SUL
SVL
DIAG
WAKE
TEST
SWL
Key
RF
RFSENS
THTH
PGND
LGND
AGND
V3RI
Figure 2: Application Schematic Example
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STK984-190-E
Figure 3: Block Diagram
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STK984-190-E
PIN FUNCTION DESCRIPTION
Pin
Name
Description
1
2
W
W Phase Output
W
W Phase Output
W Phase Output
Power Ground
Power Ground
Power Ground
V Phase Output
V Phase Output
V Phase Output
U Phase Output
U Phase Output
U Phase Output
3
W
4
PG
PG
PG
V
5
6
7
8
V
9
V
10
11
12
13
14
17
18
19
20
22
26
28
32
34
38
U
U
U
VB2
VB2
VB1
VB1
VB1
COM
HINU
LINU
HINV
HINW
LINV
LINW
Positive Supply for 3-phase bridge
Positive Supply for 3-phase bridge
Positive Supply to reverse battery protect switch
Positive Supply to reverse battery protect switch
Positive Supply to reverse battery protect switch
Gate of reverse battery protect switch
High side gate phase U
Low side gate phase U
High side gate phase V
High side gate phase W
Low side gate phase V
Low side gate phase W
Note: Pins 15, 16, 21, 23, 24, 25, 27, 29, 30, 31, 33, 35, 36, 37 are not present
Table 1: Pin Function Description
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STK984-190-E
ABSOLUTE MAXIMUM RATINGS (Notes 1,2)
Rating
Symbol
Conditions
Value
Unit
Drain−to−Source Voltage
Control Input Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
VDSS
40
+/20
30
V
V
Vin max
ID max
ID pulse
Pd max
Tj max
Tc
COM to VB1; HINx to x; LINx to PG (x = U,V,W)
DC
A
Pulse ( t = 10 μs)
85
A
p
Each channel Tc = 25C
36
W
C
C
V
Junction Temperature
175
Operating Temperature
40 to 150
1000
ESD Capability, Human Body
Model
ESDHBM
ESD Capability, Machine
Model
ESDMM
Tstg
200
V
Storage Temperature
40 to 150
C
Package mounting torque
Case mounting screw. Thermal Grease
0.6
Nm
1. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device
functionality should not be assumed, damage may occur and reliability may be affected.
2. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for
Safe Operating parameters.
RECOMMENDED OPERATING RANGES (Note 3)
Rating
Symbol
Test Conditions
VB1 to PG; VB2 to PG
Min
Typ
Max
Unit
Supply Voltage
VBmax
8
13.5
18
V
Control Input Voltage
Vin
COM to VB1; HINx to x; LINx to PG
(x = U,V,W)
-
10
18
V
Drain Current
ID
Tc = 125C , VGS = 10 V
-
-
27
A
Operating Substrate Temperature
Package mounting torque
Tc
Module Substrate Temperature
‘M3’ type screw. Thermal Grease.
40
-
-
125
0.6
C
0.4
Nm
3. Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to
stresses beyond the Recommended Operating Ranges limits may affect device reliability.
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STK984-190-E
ELECTRICAL CHARACTERISTICS (Note 4)
at Tc=25C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Each MOSFET die to outside of
case
Chip-Case Resistance
Θj-c
-
-
-
4.1
-
C/W
Drain-to-Source Breakdown
Voltage
VBR(DSS)
VGS = 0 V, ID = 250 µA
40
V
Drain-to-Source Breakdown
Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
VBR(DSS)
/TJ
Note 5
-
-
40.8
-
-
mV/C
IDSS
VGS = 0 V, VDS = 40 V
VGS = 0 V, VGS = ±20 V
1.0
±100
3.5
-
μA
nA
Gate-to-Source Leakage Current
Gate Threshold Voltage
IGSS
VGS(TH)
1.5
-
-
V
Negative Gate Threshold Voltage
Temperature Coefficient
VGS(TH)/
/
Note 5
7
mV/C
TJ
Drain-to-source ON resistance
RDS(ON)
VGS = 10 V, ID = 15 A, Note 5
VGS = 5V, ID = 10 A, Note 5
-
-
-
7.6
10.9
0.285
-
-
mΩ
mΩ
V
Output Saturation Voltage / Each
FET (incudes the wiring resistance)
VDS(sat)
VGS = 10 V, ID = 30 A
0.38
VB2 to VB1, VB2 to U/V/W; U/V/W
to PG
Forward Transconductance
Input Capacitance
gFS
Ciss
Coss
Crss
QG(TOT)
QG(TH)
QGS
QGD
td(on)
tr
Note 5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.54
1725
220
160
33
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
VGS = 0 V, VDS = 25 V, 10 MHz,
Note 5
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
V
Output Capacitance
Reverse transfer capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-on delay time
Rise time
VGS = 10 V, VDS = 32 V, ID = 30 A,
Note 5
2.0
7.2
9.8
VGS = 10 V, VDS = 32 V, ID = 30 A,
10.2
17.9
22.9
4.5
RG = 2.5 Ω, Note 5
Turn-off delay time
Fall time
td(off)
tf
Forward Diode Voltage
Reverse Recovery Time
Charge Time
VSD
tRR
VGS = 10 V, ISD = 10 A, Note 5
0.83
24.8
14.6
10.2
15.5
VGS = 0 V, ISD = 30 A,
dISD/dt = 100 A/µs
Note 5
ns
ns
ns
nC
tA
Discharge Time
tB
Reverse Recovery Charge
QRR
4. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Typical data taken from packaged discrete device characteristics
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STK984-190-E
TYPICAL CHARACTERISTICS
Figure 5 ID versus VDS for different temperatures
Figure 4 ID versus VDS for different VGS values
(VGS = 10 V)
(Tj = 175C)
Figure 9 ISD versus VSD for different temperatures
Figure 8 Current Rating
Figure 7 Switching losses versus drain current
Figure 6 Switching losses versus gate resistance
Tj = 175C, Id = 30 A, Rg = 51 Ω, L = 40 H
Tj = 175C, Id = 30 A, L = 40 H
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STK984-190-E
TYPICAL CHARACTERISTICS
Dotted line
Figure 13 Thermal Impedance
Figure 12 Safe Operating Area
Figure 10 Gate Charge Characteristics
Figure 11 Capacitance Characteristics
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STK984-190-E
Mounting Instructions
Item
Recommended Condition
Pitch
26.0±0.1 mm (Please refer to Package Outline Diagram)
Diameter : M3
Screw head types: pan head, truss head, binding head
Screw
Plane washer dimensions (Figure 14)
D = 7 mm, d = 3.2 mm and t = 0.5 mm JIS B 1256
Washer
Material: Aluminum or Copper
Warpage (the surface that contacts IPM ) : 50 to 50 μm
Screw holes must be countersunk.
No contamination on the heat sink surface that contacts IPM.
Heat sink
Torque
Grease
Temporary tightening : 50 to 60 % of final tightening on first screw
Temporary tightening : 50 to 60 % of final tightening on second screw
Final tightening : 0.4 to 0.6Nm on first screw
Final tightening : 0.4 to 0.6Nm on second screw
Silicone grease.
Thickness : 50 to 100 μm
Uniformly apply silicon grease to whole back.
Thermal foils are only recommended after careful evaluation. Thickness, stiffness and
compressibility parameters have a strong influence on performance.
Not recommended
Recommended
Figure 14: Module Mounting details: components; washer drawing; need for even spreading of thermal grease
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STK984-190-E
PACKAGE DIMENSIONS
unit : mm
MODULE SPCM24 29.6x18.2 DIP S3
CASE MODBL
ISSUE A
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STK984-190-E
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