SVC371T [ONSEMI]

APPLICATION SPECIFIC DIODE ARRAY,SO;
SVC371T
型号: SVC371T
厂家: ONSEMI    ONSEMI
描述:

APPLICATION SPECIFIC DIODE ARRAY,SO

测试 二极管
文件: 总3页 (文件大小:49K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number :EN5135A  
SVC371  
Diffused Junction Type Silicon Diode  
Composite Varactor Diode for AM Receiver  
Low-Voltage Electronic Tuning Applications  
Features  
Package Dimensions  
unit:mm  
· Excellent large-input characteristics because of dual-  
varactor composite type.  
1268  
· The number of manufacturing processes can be  
reduced and automatic mounting is possible because  
of composite type.  
[SVC371]  
· High capacitance ratio and high quality factor.  
· Facilitates tuning circuit configuration because the  
cathodes of three dual-type elements are separated  
from each other, resulting in almost no interelement  
coupling.  
· Possible to offer the SVC371 devices in a tape reel  
packaging.  
· Surface mount type.  
1:Anode  
2:Cathode  
3:Anode  
4:Cathode  
5:Anode  
6:Anode  
7:Cathode  
8:Anode  
SANYO:SOP8  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
V
Reverse Voltage  
V
R
Tj  
16  
125  
Junction Temperature  
Storage Temperature  
Tstg  
–55 to +125  
˚C  
˚C  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
16  
max  
Breakdown Voltage  
V
I
=10µA  
=20V  
R
V
(BR)R  
R
Reverse Current (One diode)  
I
V
V
V
V
V
100  
nA  
pF  
pF  
pF  
R
Interterminal Capacitance (Average)  
C
=1V, f=1MHz*1  
=6V, f=1MHz  
=8V, f=1MHz  
=1V, f=1MHz  
460*  
540*  
1V  
R
R
R
R
C
50  
6V  
C
19  
200  
26  
8V  
Quality Factor  
Q
Capacitance Ratio  
Matching Tolerance*2  
CR  
C
/C , f=1MHz  
18.5  
1V 8V  
C  
| CRFN–COSC–0.25pF | / COSC, V =1V, f=1MHz  
2.5  
3.0  
3.0  
%
%
%
m
R
V
V
=6V, f=1MHz  
=8V, f=1MHz  
R
R
Note)*1:1MHz signal:20mVrms.  
Note)*2:Calculate using the average of tow diodes contained in each element of OSC, RF1, RF2.  
Note)*:The SVC371 is classified by C as follows:  
1V  
Electrical Connection  
Rank  
C
(pF)  
1V  
R
S
T
460.0 to 491.0  
482.0 to 515.0  
505.0 to 540.0  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
33098HA (KT)/52595GI (KOTO)/TA-0335 No.5135-1/3  
SVC371  
No.5135-2/3  
SVC371  
No products described or contained herein are intended for use in surgical implants, life-support systems,  
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and  
the like, the failure of which may directly or indirectly cause injury, death or property loss.  
Anyone purchasing any products described or contained herein for an above-mentioned use shall:  
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,  
subsidiaries and distributors and all their officers and employees, jointly and severally, against any  
and all claims and litigation and all damages, cost and expenses associated with such use:  
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or  
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of  
their officers and employees jointly or severally.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-  
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees  
are made or implied regarding its use or any infringements of intellectual property rights or other rights of  
third parties.  
This catalog provides information as of March, 1998. Specifications and information herein are subject to  
change without notice.  
PS No.5135-3/3  

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