SZ1.5SMC8.2AT3G [ONSEMI]

DIODE TVS DIODE, Transient Suppressor;
SZ1.5SMC8.2AT3G
型号: SZ1.5SMC8.2AT3G
厂家: ONSEMI    ONSEMI
描述:

DIODE TVS DIODE, Transient Suppressor

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1.5SMC6.8AT3G Series,  
SZ1.5SMC6.8AT3G Series  
1500 Watt Peak Power  
Zener Transient Voltage  
Suppressors  
http://onsemi.com  
Unidirectional*  
SURFACE MOUNT  
ZENER OVERVOLTAGE  
TRANSIENT SUPPRESSORS  
5.8 78 VOLTS  
The SMC series is designed to protect voltage sensitive  
components from high voltage, high energy transients. They have  
excellent clamping capability, high surge capability, low zener  
impedance and fast response time. The SMC series is supplied in  
ON Semiconductor’s exclusive, cost-effective, highly reliable  
1500 WATT PEAK POWER  
®
SURMETIC package and is ideally suited for use in  
communication systems, automotive, numerical controls, process  
controls, medical equipment, business machines, power supplies and  
many other industrial/consumer applications.  
SMC  
CASE 403  
Specification Features  
Working Peak Reverse Voltage Range 5.8 to 77.8 V  
Standard Zener Breakdown Voltage Range 6.8 to 91 V  
Peak Power 1500 W @ 1.0 ms  
Cathode  
Anode  
ESD Rating of Class 3 (> 16 kV) per Human Body Model  
Maximum Clamp Voltage @ Peak Pulse Current  
Low Leakage < 5.0 mA Above 10 V  
UL 497B for Isolated Loop Circuit Protection  
Maximum Temperature Coefficient Specified  
Response Time is Typically < 1.0 ns  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AECQ101 Qualified and  
PPAP Capable  
These are PbFree Devices are Available**  
MARKING DIAGRAM  
AYWW  
xxxAG  
G
xxxA = Specific Device Code  
(See Table on Page 3)  
= Assembly Location  
= Year  
WW = Work Week  
A
Y
G
= PbFree Package  
(Note: Microdot may be in either location)  
Mechanical Characteristics  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
ORDERING INFORMATION  
Device***  
Package  
Shipping  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
1.5SMCxxxAT3G  
SMC  
(PbFree)  
2,500 /  
Tape & Reel  
260°C for 10 Seconds  
LEADS: Modified LBend providing more contact area to bond pads  
POLARITY: Cathode indicated by molded polarity notch  
MOUNTING POSITION: Any  
SZ1.5SMCxxxAT3G  
SMC  
(PbFree)  
2,500 /  
Tape & Reel  
***The “T3” suffix refers to a 13 inch reel.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
**Bidirectional devices will not be available in this series.  
**For additional information on our PbFree strategy and soldering details,  
please download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Individual devices are listed on page 3 of this data sheet.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
February, 2014 Rev. 11  
1.5SMC6.8AT3/D  
1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series  
MAXIMUM RATINGS  
Rating  
Peak Power Dissipation (Note 1) @ T = 25°C, Pulse Width = 1 ms  
Symbol  
Value  
1500  
4.0  
Unit  
W
P
PK  
L
DC Power Dissipation @ T = 75°C  
P
D
W
L
Measured Zero Lead Length (Note 2)  
Derate Above 75°C  
54.6  
18.3  
mW/°C  
°C/W  
Thermal Resistance, JunctiontoLead  
R
q
JL  
DC Power Dissipation (Note 3) @ T = 25°C  
P
0.75  
6.1  
165  
W
mW/°C  
°C/W  
A
D
Derate Above 25°C  
Thermal Resistance from JunctiontoAmbient  
R
q
JA  
Forward Surge Current (Note 4) @ T = 25°C  
I
200  
A
A
FSM  
Operating and Storage Temperature Range  
T , T  
65 to +150  
°C  
J
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. 10 X 1000 ms, nonrepetitive  
2. 1 in. square copper pad, FR4 board  
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.  
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless  
A
I
otherwise noted, V = 3.5 V Max. @ I (Note 5) = 100 A)  
F
F
I
F
Symbol  
Parameter  
I
Maximum Reverse Peak Pulse Current  
Clamping Voltage @ I  
PP  
V
C
PP  
V
C
V
V
V
Working Peak Reverse Voltage  
BR RWM  
RWM  
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V  
I
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
I
T
QV  
Maximum Temperature Coefficient of V  
BR  
BR  
I
PP  
I
F
Forward Current  
UniDirectional TVS  
V
F
Forward Voltage @ I  
F
5. 1/2 sine wave or equivalent, PW = 8.3 ms nonrepetitive duty  
cycle  
http://onsemi.com  
2
 
1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series  
ELECTRICAL CHARACTERISTICS  
Breakdown Voltage  
V
C
@ I (Note 8)  
PP  
V
RWM  
V
BR  
V (Note 7)  
@ I  
V
C
I
PP  
(Note 6)  
I
R
@ V  
QV  
BR  
T
RWM  
Device  
V
mA  
Min  
Nom  
Max  
mA  
V
A
%/5C  
0.057  
0.061  
0.065  
Marking  
Device*  
1.5SMC6.8AT3G  
1.5SMC7.5AT3G  
1.5SMC8.2AT3G  
6V8A  
7V5A  
8V2A  
5.8  
6.4  
7.02  
1000  
500  
200  
6.45  
7.13  
7.79  
6.8  
7.5  
8.2  
7.14  
7.88  
8.61  
10  
10  
10  
10.5  
11.3  
12.1  
143  
132  
124  
1.5SMC10AT3G  
1.5SMC12AT3G  
1.5SMC13AT3G  
10A  
12A  
13A  
8.55  
10.2  
11.1  
10  
5
5
9.5  
11.4  
12.4  
10  
12  
13  
10.5  
12.6  
13.7  
1
1
1
14.5  
16.7  
18.2  
103  
90  
82  
0.073  
0.078  
0.081  
1.5SMC15AT3G  
1.5SMC16AT3G  
1.5SMC18AT3G  
1.5SMC20AT3G  
15A  
16A  
18A  
20A  
12.8  
13.6  
15.3  
17.1  
5
5
5
5
14.3  
15.2  
17.1  
19  
15  
16  
18  
20  
15.8  
16.8  
18.9  
21  
1
1
1
1
21.2  
22.5  
25.2  
27.7  
71  
67  
59.5  
54  
0.084  
0.086  
0.088  
0.09  
1.5SMC22AT3G  
1.5SMC24AT3G  
1.5SMC27AT3G  
1.5SMC30AT3G  
22A  
24A  
27A  
30A  
18.8  
20.5  
23.1  
25.6  
5
5
5
5
20.9  
22.8  
25.7  
28.5  
22  
24  
27  
30  
23.1  
25.2  
28.4  
31.5  
1
1
1
1
30.6  
33.2  
37.5  
41.4  
49  
45  
40  
36  
0.092  
0.094  
0.096  
0.097  
1.5SMC33AT3G  
1.5SMC36AT3G  
1.5SMC39AT3G  
1.5SMC43AT3G  
33A  
36A  
39A  
43A  
28.2  
30.8  
33.3  
36.8  
5
5
5
5
31.4  
34.2  
37.1  
40.9  
33  
36  
39  
43  
34.7  
37.8  
41  
1
1
1
1
45.7  
49.9  
53.9  
59.3  
33  
30  
28  
0.098  
0.099  
0.1  
45.2  
25.3  
0.101  
1.5SMC47AT3G  
1.5SMC51AT3G  
1.5SMC56AT3G  
1.5SMC62AT3G  
47A  
51A  
56A  
62A  
40.2  
43.6  
47.8  
53  
5
5
5
5
44.7  
48.5  
53.2  
58.9  
47  
51  
56  
62  
49.4  
53.6  
58.8  
65.1  
1
1
1
1
64.8  
70.1  
77  
23.2  
21.4  
19.5  
17.7  
0.101  
0.102  
0.103  
0.104  
85  
1.5SMC68AT3G  
1.5SMC75AT3G  
1.5SMC82AT3G  
1.5SMC91AT3G  
68A  
75A  
82A  
91A  
58.1  
64.1  
70.1  
77.8  
5
5
5
5
64.6  
71.3  
77.9  
86.5  
68  
75  
82  
91  
71.4  
78.8  
86.1  
95.5  
1
1
1
1
92  
16.3  
14.6  
13.3  
12  
0.104  
0.105  
0.105  
0.106  
103  
113  
125  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
6. A transient suppressor is normally selected according to the working peak reverse voltage (V  
the DC or continuous peak operating voltage level.  
), which should be equal to or greater than  
RWM  
7. V measured at pulse test current I at an ambient temperature of 25°C.  
BR  
T
8. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data 1500 Watt at the beginning of this group.  
* Include SZ-prefix devices where applicable.  
http://onsemi.com  
3
 
1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series  
100  
10  
PULSE WIDTH (t ) IS DEFINED  
P
AS THAT POINT WHERE THE PEAK  
NONREPETITIVE  
PULSE WAVEFORM  
SHOWN IN FIGURE 2  
t 10 ms  
rꢀ  
CURRENT DECAYS TO 50%  
OF I .  
PP  
100  
50  
0
PEAK VALUE - I  
PP  
I
PP  
2
HALF VALUE -  
1
t
P
0.1  
0.1 ms  
1 ms  
10 ms  
100 ms  
1 ms  
10 ms  
0
1
2
3
4
t , PULSE WIDTH  
P
t, TIME (ms)  
Figure 1. Pulse Rating Curve  
Figure 2. Pulse Waveform  
160  
140  
120  
1000  
500  
V
BR  
ꢀ(NOM)ꢀ=ꢀ6.8ꢀTOꢀ13ꢀV  
20ꢀV  
T ꢀ=ꢀ25°C  
L
t ꢀ=ꢀ10ꢀms  
P
43ꢀV  
24ꢀV  
200  
100  
50  
75ꢀV  
120ꢀV  
100  
80  
180ꢀV  
20  
10  
60  
40  
20  
0
5
2
1
0.3  
0.5 0.7  
1
2
3
5
7
10  
20 30  
0
25  
50  
75  
100  
125  
150  
T , AMBIENT TEMPERATURE (°C)  
A
DV , INSTANTANEOUS INCREASE IN V ABOVE V (NOM) (VOLTS)  
BR BR BR  
Figure 4. Dynamic Impedance  
Figure 3. Pulse Derating Curve  
UL RECOGNITION  
The entire series has Underwriters Laboratory  
Recognition for the classification of protectors (QVGQ2)  
under the UL standard for safety 497B and File #E210057.  
Many competitors only have one or two devices recognized  
or have recognition in a non-protective category. Some  
competitors have no recognition at all. With the UL497B  
recognition, our parts successfully passed several tests  
including Strike Voltage Breakdown test, Endurance  
Conditioning, Temperature test, Dielectric Voltage-Withstand  
test, Discharge test and several more.  
Whereas, some competitors have only passed a  
flammability test for the package material, we have been  
recognized for much more to be included in their Protector  
category.  
http://onsemi.com  
4
 
1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series  
APPLICATION NOTES  
Response Time  
minimum lead lengths and placing the suppressor device as  
close as possible to the equipment or components to be  
protected will minimize this overshoot.  
In most applications, the transient suppressor device is  
placed in parallel with the equipment or component to be  
protected. In this situation, there is a time delay associated  
with the capacitance of the device and an overshoot  
condition associated with the inductance of the device and  
the inductance of the connection method. The capacitive  
effect is of minor importance in the parallel protection  
scheme because it only produces a time delay in the  
transition from the operating voltage to the clamp voltage as  
shown in Figure 5.  
The inductive effects in the device are due to actual  
turn-on time (time required for the device to go from zero  
current to full current) and lead inductance. This inductive  
effect produces an overshoot in the voltage across the  
equipment or component being protected as shown in  
Figure 6. Minimizing this overshoot is very important in the  
application, since the main purpose for adding a transient  
suppressor is to clamp voltage spikes. The SMC series have  
a very good response time, typically < 1.0 ns and negligible  
inductance. However, external inductive effects could  
produce unacceptable overshoot. Proper circuit layout,  
Some input impedance represented by Z is essential to  
in  
prevent overstress of the protection device. This impedance  
should be as high as possible, without restricting the circuit  
operation.  
Duty Cycle Derating  
The data of Figure 1 applies for non-repetitive conditions  
and at a lead temperature of 25°C. If the duty cycle increases,  
the peak power must be reduced as indicated by the curves  
of Figure 7. Average power must be derated as the lead or  
ambient temperature rises above 25°C. The average power  
derating curve normally given on data sheets may be  
normalized and used for this purpose.  
At first glance the derating curves of Figure 7 appear to be  
in error as the 10 ms pulse has a higher derating factor than  
the 10 ms pulse. However, when the derating factor for a  
given pulse of Figure 7 is multiplied by the peak power value  
of Figure 1 for the same pulse, the results follow the  
expected trend.  
http://onsemi.com  
5
1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series  
TYPICAL PROTECTION CIRCUIT  
Z
in  
LOAD  
V
in  
V
L
V
in  
(TRANSIENT)  
OVERSHOOT DUE TO  
INDUCTIVE EFFECTS  
V
V
V
in  
(TRANSIENT)  
V
L
V
L
V
in  
t
d
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT  
t
t
Figure 5.  
Figure 6.  
1
0.7  
0.5  
0.3  
0.2  
PULSE WIDTH  
10 ms  
0.1  
0.07  
0.05  
1 ms  
0.03  
0.02  
100 ms  
10 ms  
0.01  
0.1 0.2  
0.5  
1
2
5
10 20  
50 100  
D, DUTY CYCLE (%)  
Figure 7. Typical Derating Factor for Duty Cycle  
http://onsemi.com  
6
1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series  
PACKAGE DIMENSIONS  
SMC  
CASE 40303  
ISSUE E  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
H
E
2. CONTROLLING DIMENSION: INCH.  
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.  
4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03.  
E
MILLIMETERS  
INCHES  
DIM  
A
A1  
b
c
D
E
H
E
L
MIN  
1.90  
0.05  
2.92  
0.15  
5.59  
6.60  
7.75  
0.76  
NOM  
2.13  
0.10  
3.00  
0.23  
5.84  
6.86  
7.94  
1.02  
MAX  
MIN  
NOM  
0.084  
0.004  
0.118  
0.009  
0.230  
0.270  
0.313  
0.040  
MAX  
0.095  
0.006  
0.121  
0.012  
0.240  
0.280  
0.320  
0.050  
2.41  
0.15  
3.07  
0.30  
6.10  
7.11  
8.13  
1.27  
0.075  
0.002  
0.115  
0.006  
0.220  
0.260  
0.305  
0.030  
b
D
L1  
0.51 REF  
0.020 REF  
A
c
A1  
L
L1  
SOLDERING FOOTPRINT*  
4.343  
0.171  
3.810  
0.150  
2.794  
0.110  
mm  
inches  
ǒ
Ǔ
SCALE 4:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
SURMETIC is a registered trademark of Semiconductor Components Industries, LLC (SCILLC).  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81358171050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
1.5SMC6.8AT3/D  

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