SZBZX84B22LT1G [ONSEMI]
Zener Voltage Regulators;
| 型号： | SZBZX84B22LT1G |
| 厂家： | 
ONSEMI |
| 描述： | Zener Voltage Regulators 测试 光电二极管 |
| 文件： | 总7页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZX84BxxxLT1G,
BZX84CxxxLT1G Series,
SZBZX84BxxxLT1G,
SZBZX84CxxxLT1G Series
Zener Voltage Regulators
http://onsemi.com
225 mW SOT−23 Surface Mount
SOT−23
CASE 318
STYLE 8
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
3
1
Features
Cathode
Anode
• 225 mW Rating on FR−4 or FR−5 Board
• Zener Breakdown Voltage Range − 2.4 V to 75 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• Tight Tolerance Series Available (See Page 4)
MARKING DIAGRAM
xxx M G
G
1
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
xxx
M
= Device Code
= Date Code*
= Pb−Free Package
G
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
ORDERING INFORMATION
†
Device
Package
Shipping
BZX84CxxxLT1G
SOT−23
3,000 /
(Pb−Free)
Tape & Reel
SZBZX84CxxxLT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BZX84CxxxLT3G
SOT−23
10,000 /
(Pb−Free)
Tape & Reel
SZBZX84CxxxLT3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
BZX84BxxxLT1G
SOT−23
3,000 /
(Pb−Free)
Tape & Reel
SZBZX84BxxxLT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BZX84BxxxLT3G
SOT−23
10,000 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
May, 2013 − Rev. 17
BZX84C2V4LT1/D
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Total Power Dissipation on FR−5 Board,
P
D
(Note 1) @ T = 25°C
225
1.8
556
mW
mW/°C
°C/W
A
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
Total Power Dissipation on Alumina
P
D
Substrate, (Note 2) @ T = 25°C
300
2.4
417
mW
mW/°C
°C/W
A
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
Junction and Storage Temperature Range
T , T
−65 to +150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR−5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C
A
I
unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
F
F
I
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
Z
Maximum Zener Impedance @ I
V V
Z R
ZT
ZT
V
I
V
F
R
ZT
I
Reverse Leakage Current @ V
Reverse Voltage
R
R
I
V
R
I
F
Forward Current
V
F
Forward Voltage @ I
F
QV
Maximum Temperature Coefficient of V
Z
Z
C
Max. Capacitance @ V = 0 and f = 1 MHz
R
Zener Voltage Regulator
http://onsemi.com
2
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
A
F
F
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
V
@ I
(Volts)
V
(V)
= 1 mA
V
(V)
Max Reverse
Leakage
Current
q
VZ
Z1
Z2
Z3
= 5 mA
@ I
@ I = 20 mA
(mV/k)
@ I = 5 mA
ZT1
ZT1
ZT2
(Note 3)
ZT3
Z
(W)
@ I
5 mA
Z
(W)
@ I
1 mA
Z
ZT3
(W)
@ I =
ZT3
(Note 3)
ZT1
ZT2
(Note 3)
C (pF)
I
V
R
Volts
Device
=
=
@ V = 0
R
ZT1
ZT2
R
@
Min
Nom
2.4
2.7
3
Max
2.6
Min
1.7
Max
2.1
2.4
2.7
2.9
3.3
3.5
4
Min
Max
3.2
Min
Max
0
mA
Device*
BZX84C2V4LT1G
BZX84C2V7LT1G
BZX84C3V0LT1G
BZX84C3V3LT1G
BZX84C3V6LT1G
BZX84C3V9LT1G
BZX84C4V3LT1G
BZX84C4V7LT1/T3G
BZX84C5V1LT1/T3G
BZX84C5V6LT1/T3G
BZX84C6V2LT1/T3G
BZX84C6V8LT1/T3G
BZX84C7V5LT1G
BZX84C8V2LT1G
BZX84C9V1LT1/T3G
BZX84C10LT1G
Marking
f = 1 MHz
20 mA
Z11
Z12
Z13
Z14
Z15
Z16
W9
Z1
2.2
2.5
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
600
600
600
600
600
600
600
500
480
400
150
80
2.6
3
50
50
1
1
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
450
2.9
1.9
3.6
50
50
40
40
30
30
15
15
10
6
20
10
5
0
450
450
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
120
110
105
100
85
2.8
3.2
2.1
3.3
3.6
3.9
4.1
4.4
4.5
5
3.9
1
0
3.1
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
3.5
2.3
4.2
1
0
3.4
3.8
2.7
4.5
5
1
0
3.7
4.1
2.9
4.7
3
1
−2.5
0
4
4.6
3.3
5.1
3
1
4.4
5
3.7
4.7
5.3
6
5.4
3
2
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Z2
4.8
5.4
4.2
5.9
2
2
Z3
5.2
6
4.8
5.2
5.8
6.4
7
6.3
1
2
Z4
5.8
6.6
5.6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14
6.8
3
4
Z5
6.4
7.2
6.3
7.4
6
2
4
1.2
Z6
7
7.9
6.9
80
8
6
1
5
2.5
Z7
7.7
8.7
7.6
80
7.7
8.5
9.4
10.4
11.4
12.5
13.9
15.4
16.9
18.9
20.9
22.9
8.8
6
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
5
3.2
Z8
8.5
9.6
8.4
100
150
150
150
170
200
200
225
225
250
250
9.7
8
6
3.8
Z9
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
9.3
10.7
11.8
12.9
14.2
15.7
17.2
19.2
21.4
23.4
25.7
10
10
10
15
20
20
20
20
25
25
7
4.5
BZX84C11LT1G
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
11
10.2
11.2
12.3
13.7
15.2
16.7
18.7
20.7
22.7
8
5.4
BZX84C12LT1G
12
8
6.0
BZX84C13LT1G
13
8
7.0
BZX84C15LT1/T3G
BZX84C16LT1G
15
15.5
17
10.5
11.2
12.6
14
15.4
16.8
9.2
16
10.4
12.4
14.4
16.4
18.4
BZX84C18LT1/T3G
BZX84C20LT1G
18
19
20
21.1
23.2
25.5
BZX84C22LT1G
22
85
BZX84C24LT1G
24
80
V
Below
= 0.1 m-
A
Max Reverse
Leakage
Current
q
VZ
(mV/k) Below
Z2
V
Below
= 2 mA
@ I
ZT2
V Below
Z3
Z1
Z
Z
Z
@ I
ZT1
@ I
ZT3
= 10 mA
ZT1
ZT2
ZT3
@ I
= 2 mA
ZT1
Below
Below
Below
C (pF)
I
V
R
Device
Marking
@ I
ZT1
=
@ I
0.5 mA
=
@ I
10 mA
=
@ V = 0
R
ZT4
ZT3
R
@
Min
Nom
Max
28.9
32
Min
Max
28.9
32
Min
Max
29.3
32.4
35.4
38.4
41.5
46.5
50.5
54.6
60.8
67
(V)
18.9
21
Min
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
mA
Device*
BZX84C27LT1G
BZX84C30LT1G
BZX84C33LT1/T3G
BZX84C36LT1G
BZX84C39LT1G
BZX84C43LT1G
BZX84C47LT1G
BZX84C51LT1G
BZX84C56LT1G
BZX84C62LT1G
BZX84C68LT1G
BZX84C75LT1G
2 mA
f = 1 MHz
Y10
Y11
Y12
Y13
Y14
Y15
Y16
Y17
Y18
Y19
Y20
Y21
25.1
28
31
34
37
40
44
48
52
58
64
70
27
30
33
36
39
43
47
51
56
62
68
75
80
80
25
300
300
325
350
350
375
375
400
425
450
475
500
25.2
28.1
31.1
34.1
37.1
40.1
44.1
48.1
52.1
58.2
64.2
70.3
45
50
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
70
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
57.4
63.4
69.4
70
70
70
45
40
40
40
40
35
35
35
35
80
35
55
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
38
90
38
60
41
130
150
170
180
200
215
240
255
41
70
46
46
80
50
50
90
54
54
100
110
120
130
140
60
60
66
66
72
72
73.2
80.2
79
79
3. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.
Z
*Include SZ-prefix devices where applicable.
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3
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
A
F
F
Max Reverse
Leakage
Current
Z
ZT
(W) @
q
VZ
(mV/k)
@ I = 5 mA
I
ZT
= 5 mA
V
Z
(Volts) @ I
= 5 mA
ZT
C (pF)
I
V
R
(Note 4)
Max
80
(Note 4)
Nom
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
12
R
ZT
@ V =0,
Device
Marking
@
R
Min
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
11.8
14.7
15.7
17.6
21.6
23.5
Max
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
12.2
15.3
16.3
18.4
22.4
24.5
mA
Volts
2
Min
Max
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7
f = 1 MHz
260
225
200
185
155
140
135
130
130
110
Device
BZX84B4V7LT1G
T10
T11
T12
T13
T14
T15
T16
T17
T18
T22
T19
T20
T24
T25
3
2
1
3
2
1
−3.5
−2.7
−2
BZX84B5V1LT1G
BZX84B5V6LT1G
BZX84B6V2LT1G
BZX84B6V8LT1G
BZX84B7V5LT1G
BZX84B8V2LT1G
BZX84B9V1LT1G
BZX84B12LT1G
BZX84B15LT1G
BZX84B16LT1G
BZX84B18LT1G
BZX84B22LT1G
BZX84B24LT1G
60
2
40
2
10
4
0.4
15
4
1.2
15
5
2.5
15
0.7
0.5
5
3.2
15
6
3.8
25
0.1
8
6
10
15
30
0.05
0.05
0.05
0.05
0.05
10.5
11.2
12.6
15.4
16.8
9.2
13
16
40
10.4
12.4
16.4
18.4
14
105
100
85
18
45
16
22
55
20
24
70
22
80
4. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.
Z
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
A
F
F
Max Reverse
Leakage
Current
Z
ZT
(W) @
q
VZ
(mV/k)
@ I = 2 mA
I
ZT
= 2 mA
(Note 4)
V
(Volts) @ I
= 2 mA
Z
ZT
C (pF)
I
V
R
(Note 4)
Nom
27
R
ZT
@ V =0,
Device
@
R
Min
Max
Max
mA
0.05
Volts
Min
21.4
Max
f = 1 MHz
Marking
Device*
BZX84B27LT1G
T27
26.5
27.5
80
18.9
25.3
70
*Include SZ-prefix devices where applicable.
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4
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
100
10
1
TYPICAL T VALUES
C
TYPICAL T VALUES
C
V @ I
Z
ZT
V @ I
Z
ZT
2
1
0
-1
-ꢀ2
-ꢀ3
2
3
4
5
6
7
8
9
10
11
12
10
100
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 1. Temperature Coefficients
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
(Temperature Range −55°C to +150°C)
1000
100
10
1
1000
100
10
T = 25°C
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
J
I
Z(AC)
f = 1 kHz
= 0.1 I
Z(DC)
I = 1 mA
Z
5 mA
20 mA
75°C 25°C
0.6 0.7
0°C
150°C
0.5
1
0.4
1
10
V , NOMINAL ZENER VOLTAGE
100
0.8
0.9
1.0
1.1
1.2
V , FORWARD VOLTAGE (V)
F
Z
Figure 3. Effect of Zener Voltage on
Zener Impedance
Figure 4. Typical Forward Voltage
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5
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
TYPICAL CHARACTERISTICS
1000
1000
T = 25°C
A
100
10
0 V BIAS
1 V BIAS
100
1
+150°C
BIAS AT
50% OF V NOM
0.1
0.01
Z
10
1
+ꢀ25°C
-ꢀ55°C
0.001
0.0001
0.00001
1
10
100
0
10
20
30
40
50
60
70
80
90
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 5. Typical Capacitance
Figure 6. Typical Leakage Current
100
10
100
10
T = 25°C
A
T = 25°C
A
1
1
0.1
0.01
0.1
0.01
10
30
50
70
90
0
2
4
6
8
10
12
V , ZENER VOLTAGE (V)
Z
V , ZENER VOLTAGE (V)
Z
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
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6
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
SEE VIEW C
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
3
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
−−−
MAX
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
10°
c
1
2
b
0.25
e
q
H
A
E
q
L
STYLE 8:
A1
PIN 1. ANODE
L1
VIEW C
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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