SZESD9901MX2WT5G [ONSEMI]
ESD Protection - In-Vehicle NetworksAutomotive Qualified Low CapacitanceHigh Speed Data Network Protection;
| 型号： | SZESD9901MX2WT5G |
| 厂家： | 
ONSEMI |
| 描述： | ESD Protection - In-Vehicle NetworksAutomotive Qualified Low CapacitanceHigh Speed Data Network Protection |
| 文件： | 总6页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD Protection - In-Vehicle
Networks
Automotive Qualified Low Capacitance
High Speed Data Network Protection
SZESD9901
The SZESD9901 protects sensitive automotive electronics from
ESD, Surge, and other harmful transient events. This device is
designed for compliance to OPEN Alliance 100/1000 BASE−T1
Ethernet, and other high speed data networks. Device is suitable for
ESD protection on the connector side of the transceiver PHY.
www.onsemi.com
MARKING
DIAGRAM
Features
X2DFNW2
CASE 711BG
DAM
• High Trigger Voltage ≥ 100 V
• X2DFN 1.0 x 0.6 mm Package
DA = Specific Device Code
• Wettable Flank Package for Optimal Automated Optical Inspection
M
= Date Code
(AOI)
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
PIN CONNECTIONS
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
PIN 1
PIN 2
Compliant
Typical Applications
• Open Alliance 100/1000 BASE−T1 Ethernet
• In Vehicle Networking (IVN)
• High Speed Data Networks
ORDERING INFORMATION
†
Device
SZESD9901MX2WT5G X2DFNW2 8,000 / Tape
(Pb−Free) & Reel
Package
Shipping
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
−55 to +150
−55 to +150
260
Unit
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Operating Junction Temperature Range
Storage Temperature Range
T
J
T
stg
°C
Lead Solder Temperature − Maximum
T
L
°C
(10 Seconds)
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
ISO 10605 150 pF / 330 W Contact*
ISO 10605 330 pF / 330 W Contact
ISO 10605 330 pF / 2 kW Contact
ISO 10605 150 pF / 2 kW Contact
* minimum number of discharges > 1000
ESD
30
30
30
30
30
30
kV
Maximum Peak Pulse Current 8/20 ms
I
pp
2.2
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Complies with the Following Standards:
• ISO7637−2, Jumpstart, Load Dump
• Open Alliance 100/1000 BASE−T1 Ethernet
• ISO7637−3, Pulse 2a 85 V, 3a 3b 150 V
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
July, 2021 − Rev. 1
SZESD9901/D
SZESD9901
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Parameter
Reverse Working Voltage
Reverse Leakage Current
Reverse Holding Voltage
ESD Trigger Voltage (Note 2)
Reverse Peak Pulse Current
Channel Capacitance
Symbol
Conditions
I/O Pin to GND
= 25 V
Min
Typ
Max
25
Unit
V
V
RWM
I
R
V
RWM
1
200
nA
V
V
HOLD
V
trigger
I/O Pin to GND
25
100
V
I
PP
per IEC61000−4−5 (8x20 ms)
= 0 V, f = 1 MHz
2.2
2.6
A
C
V
R
2.3
0.4
pF
W
Jio−gnd
Dynamic Resistance (Note 2)
R
I/O to GND, GND to I/O
DYN
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. For test procedure see Figure 6 and application note AND8307/D.
2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z = 50 W, t = 100 ns, t = 1 ns, averaging window: t = 70 ns to t = 90 ns.
0
p
r
1
2
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2
SZESD9901
5
4
3
2
1
0
100.0
80.0
60.0
40.0
20.0
0.0
−30 −25 −20 −15 −10 −5
0
5
10 15 20 25 30
0
25
50
75
100
125
150
TEMPERATURE (°C)
V
Bias
, (V)
Figure 3. Steady State Power Derating
Figure 21. CV Characteristics
28
26
24
22
20
18
16
14
12
10
8
10
8
6
4
6
4
2
2
0
0
150
0
25
50
75
V , (V)
100
125
C
Figure 4. Positive TLP IV Curve
−28
−26
−24
−22
−20
−18
−16
−14
−12
−10
−8
10
8
6
4
2
−6
−4
−2
0
0
0
25
50
75
V , (V)
100
125
150
C
Figure 5. Negative TLP IV Curve
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3
SZESD9901
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
I
peak
Test Volt- First Peak Current at
age (kV) Current (A) 30 ns (A)
Current at
60 ns (A)
100%
90%
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
I @ 30 ns
22.5
30
12
16
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 6. IEC61000−4−2 Spec
50 W Coax
Cable
Transmission Line Pulse (TLP) Measurement
L
Attenuator
S
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 7. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 8 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
÷
50 W Coax
Cable
I
M
V
M
10 MW
DUT
V
C
Oscilloscope
Figure 7. Simplified Schematic of a Typical TLP
System
Figure 8. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X2DFNW2 1.0x0.6, 0.65P
CASE 711BG
ISSUE C
SCALE 8:1
DATE 13 SEP 2019
GENERIC
MARKING DIAGRAM*
XXM
XX = Specific Device Code
M
= Date Code
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON15241G
X2DFNW2 1.0X0.6, 0.65P
PAGE 1 OF 1
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ESD Protection - In-Vehicle NetworksAutomotive Qualified Low CapacitanceHigh Speed Data Network Protection
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