SZESDM3551MXT5G [ONSEMI]
ESD 保护二极管，CC及 SBU保护 (5.5 V – USB 3.x)，21 pF;
| 型号： | SZESDM3551MXT5G |
| 厂家： | 
ONSEMI |
| 描述： | ESD 保护二极管，CC及 SBU保护 (5.5 V – USB 3.x)，21 pF 二极管 |
| 文件： | 总9页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
5.5 V ESD Protection Diode
Micro−Packaged Diodes for ESD Protection
X3DFN2 (0201)
CASE 152AF
ESDM3551
The ESDM3551 is designed to protect voltage sensitive components
that require low capacitance from ESD and transient voltage events.
Excellent clamping capability, low capacitance, low leakage, and fast
response time, make these parts ideal for ESD protection on designs
where board space is at a premium.
X2DFN2 (0402)
CASE 714AB
MARKING DIAGRAMS
Features
Low Clamping Voltage
Small Body Outline Dimensions:
− 0201: 0.62 mm x 0.32 mm
− 0402: 1.00 mm x 0.60 mm
PIN 1
M
5
M
= Specific Device Code
= Date Code
Low Body Height: 0.3 mm
Stand−off Voltage: 5.5 V
IEC61000−4−2 Level 4 ESD Protection
JJ M
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
JJ = Specific Device Code
= Date Code
M
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
USB ID Line Protection
mSD Card Protection
Audio Line Protection
GPIO
2
1
ORDERING INFORMATION
MAXIMUM RATINGS
†
Device
Package Shipping
Rating
Symbol
Value
Unit
ESDM3551MXT5G
ESDM3551N2T5G
SZESDM3551N2T5G
X3DFN2
(Pb−Free)
10000 /
Tape & Reel
IEC 61000−4−2 Contact
IEC 61000−4−2 Air
ISO 10605 150 pF/2 kW
ISO 10605 330 pF/2 kW
ISO 10605 330 pF/330 W
ESD
30
30
30
30
30
kV
X2DFN2
(Pb−Free)
8000 / Tape
& Reel
Total Power Dissipation on FR−5 Board
P
D
250
mW
(Note 1) @ T = 25C
A
X2DFN2
(Pb−Free)
8000 / Tape
& Reel
Thermal Resistance, Junction−to−Ambient
R
400
−55 to +150
260
C/W
C
q
JA
Junction and Storage Temperature Range
T , T
J stg
X3DFN2
(Pb−Free)
SZESDM3551MXT5G
10000 /
Tape & Reel
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
See Application Note AND8308/D for further description of survivability specs.
Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
November, 2022 − Rev. 6
ESDM3551/D
ESDM3551
ELECTRICAL CHARACTERISTICS
(T = 25C unless otherwise noted)
A
I
I
PP
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
PP
I
T
I
V
R
BR RWM
V
Clamping Voltage @ I
V
C
V
C
PP
V
I
V
V
V
R
T
RWM BR C
V
RWM
Working Peak Reverse Voltage
I
I
R
Maximum Reverse Leakage Current @ V
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
PP
I
T
Bi−Directional TVS
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
A
Parameter
Symbol
Conditions
Min
Typ
Max
5.5
7.0
0.1
6.0
8.2
Unit
V
Reverse Working Voltage
Breakdown Voltage (Note 2)
Reverse Leakage Current
Clamping Voltage (Note 3)
Clamping Voltage (Note 3)
Peak Pulse Current (Note 3)
V
RWM
V
BR
I = 1 mA
5.6
V
T
I
R
V
RWM
= 5.5 V
mA
V
V
C
I
I
t
= 1 A
PP
PP
V
C
= 8 A
V
I
PP
= 8/20 ms
P
9.9
A
I
PP
= 16 A
Clamping Voltage
TLP (Note 4)
V
C
7.5
V
IEC 61000−4−2 Level 4 equivalent
(8 kV Contact, 15 kV Air)
Junction Capacitance
Dynamic Resistance
Insertion Loss
C
V
= 0 V, f = 1 MHz
21
pF
W
J
R
R
TLP Pulse
f = 10 MHz
0.11
0.01
DYN
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
3. Non−repetitive current pulse at T = 25C, per IEC61000−4−5 waveform.
A
4. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z = 50 W, t = 100 ns, t = 4 ns, averaging window; t = 30 ns to t = 60 ns.
0
p
r
1
2
TYPICAL CHARACTERISTICS
40
35
30
25
20
15
10
5
5
0
−5
−10
−15
−20
−25
−30
−35
−40
0
−5
−20
0
20
40
60
TIME (ns)
80
100
120 140
−20
0
20
40
60
80
100
120 140
TIME (ns)
Figure 1. ESD Clamping Voltage Screenshot
Figure 2. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Negative 8 kV Contact per IEC61000−4−2
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2
ESDM3551
TYPICAL CHARACTERISTICS (continued)
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
1.E−11
25
20
15
10
5
0
−10 −8
−6
−4 −2
0
2
4
6
8
10
−5 −4
−3 −2 −1
0
1
2
3
4
5
V
R
(V)
V
BIAS
(V)
Figure 3. IV Characteristics
Figure 4. CV Characteristics
1
0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
−1
−2
−3
−4
−5
−6
−7
−8
−9
−10
1.0E+07
1.0E+08
1.0E+09 0.0E+00
5.0E+08
1.0E+09
1.5E+09 2.0E+09
FREQUENCY
FREQUENCY (Hz)
Figure 5. RF Insertion Loss
Figure 6. Capacitance over Frequency
20
10
−20
−18
−16
−14
−12
−10
−8
10
8
18
16
14
12
10
8
8
6
4
6
4
6
−6
4
2
0
−4
2
0
2
−2
0
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
VOLTAGE (V)
VOLTAGE (V)
Figure 7. Positive TLP I−V Curve
Figure 8. Negative TLP I−V Curve
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3
ESDM3551
TYPICAL CHARACTERISTICS (continued)
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
I
PK
(A)
I
PK
(A)
Figure 9. Positive Clamping Voltage vs. Peak Pulse
Figure 10. Negative Clamping Voltage vs. Peak
Current (tp = 8/20 ms)
Pulse Current (tp = 8/20 ms)
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4
ESDM3551
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
I
peak
First Peak
Current
(A)
100%
90%
Test Volt-
age (kV)
Current at
30 ns (A)
Current at
60 ns (A)
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
I @ 30 ns
22.5
30
12
16
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 11. IEC61000−4−2 Spec
Oscilloscope
ESD Gun
TVS
50 W
Cable
50 W
Figure 12. Diagram of ESD Test Setup
ESD Voltage Clamping
clearly defined in the spec how to specify a clamping voltage
at the device level. onsemi has developed a way to examine
the entire voltage waveform across the ESD protection
diode over the time domain of an ESD pulse in the form of
an oscilloscope screenshot, which can be found on the
datasheets for all ESD protection diodes. For more
information on how onsemi creates these screenshots and
how to interpret them please refer to AND8307/D.
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
100
t
r
PEAK VALUE I
@ 8 ms
RSM
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I /2 @ 20 ms
RSM
t
P
10
0
0
20
40
t, TIME (ms)
60
80
Figure 13. 8 X 20 ms Pulse Waveform
www.onsemi.com
5
ESDM3551
50 W Coax
Cable
Transmission Line Pulse (TLP) Measurement
L
Attenuator
S
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 14. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 15 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
50 W Coax
Cable
I
M
V
M
10 MW
DUT
V
C
Oscilloscope
Figure 14. Simplified Schematic of a Typical TLP
System
Figure 15. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X3DFN2, 0.62x0.32, 0.355P, (0201)
CASE 152AF
ISSUE B
DATE 13 JAN 2023
SCALE 8:1
GENERIC
MARKING DIAGRAM*
PIN 1
XM
X = Specific Device Code
M = Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON56472E
X3DFN2, 0.62X0.32, 0.355P, (0201)
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X2DFN2 1.0x0.6, 0.65P
CASE 714AB
ISSUE B
DATE 21 NOV 2017
SCALE 8:1
NOTES:
0.10
C
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
A B
E
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
PIN 1
INDICATOR
MILLIMETERS
DIM MIN
NOM MAX
A
A1
b
D
E
e
L
0.34
−−−
0.45
0.95
0.55
0.37
0.03
0.50
1.00
0.60
0.65 BSC
0.25
0.40
0.05
0.55
1.05
0.65
0.05
C
TOP VIEW
NOTE 3
A
0.10
0.10
C
0.20
0.30
C
GENERIC
MARKING DIAGRAM*
A1
SEATING
PLANE
C
SIDE VIEW
XX M
e
b
XX = Specific Device Code
e/2
M
0.05
C A B
M
= Date Code
1
RECOMMENDED
2X
L
0.05
SOLDER FOOTPRINT*
M
C A B
1.20
2X
BOTTOM VIEW
2X
0.47
0.60
PIN 1
DIMENSIONS: MILLIMETERS
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON98172F
X2DFN2 1.0X0.6, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
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