SZNSP8814MTWTAG [ONSEMI]
用于高速数据线的低电容浪涌保护;
| 型号： | SZNSP8814MTWTAG |
| 厂家： | 
ONSEMI |
| 描述： | 用于高速数据线的低电容浪涌保护 局域网 测试 光电二极管 |
| 文件： | 总10页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
SZNSP8814
ESD and Surge Protection
Device
Low Capacitance Surge Protection for
High Speed Data
The SZNSP8814 surge protector is designed specifically to protect
10/100 and GbE Ethernet signals from high levels of surge current.
Low clamping voltage under high surge conditions make this device
an ideal solution for protecting voltage sensitive lines leading to
Ethernet transceiver chips. Low capacitance combined with
flow-through style packaging allows for easy PCB layout and matched
trace lengths necessary to maintain consistent impedance between
high-speed differential lines.
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WDFNW8
CASE 515AE
Features
• Protection for the Following IEC Standards:
IEC 61000−4−2 (ESD) 30 kV (Contact)
IEC 61000−4−5 (Lightning) 35 A (8/20 ms)
• Flow−Thru Routing Scheme
MARKING DIAGRAM
4WM
G
• Low Capacitance: 2 pF Max (I/O to I/O)
• UL Flammability Rating of 94 V−0
4W = Specific Device Code
• Wettable Flank Package for optimal Automated Optical Inspection
M
G
= Date Code
= Pb−Free Package
(AOI)
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable*
ORDERING INFORMATION
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
†
Device
Package
Shipping
Compliant
SZNSP8814MTWTAG WDFNW8 3000 / Tape &
(Pb−Free) Reel
Typical Applications
• 10/100 and GbE Ethernet
• MagJacks®/Integrated Magnetics
• Notebooks/Desktops/Servers
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
−55 to +125
−55 to +150
260
Unit
°C
Operating Junction Temperature Range
Storage Temperature Range
T
J
T
stg
°C
Lead Solder Temperature −
Maximum (10 Seconds)
T
L
°C
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
ISO 10605 330 pF / 330 W Contact
ISO 10605 330 pF / 2 kW Contact
ISO 10605 150 pF / 2 kW Contact
ESD
30
30
30
30
30
kV
A
Maximum Peak Pulse Current
I
PP
8/20 ms @ T = 25°C
35
14
A
10/700 ms @ T = 25°C
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of survivability specs.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
July, 2019 − Rev. 0
SZNSP8814/D
SZNSP8814
Pin2Pin3 Pin6 Pin7
GND
I/O
GND
I/O
GND
GND
=
I/O
I/O
GND
GND
Pins 1, 4, 5, 8
Note: Common GND – Only minimum of 1 GND connection required
Figure 1. Pin Schematic
ELECTRICAL CHARACTERISTICS
A
I
(T = 25°C unless otherwise noted)
I
PP
Symbol
Parameter
Working Peak Voltage
V
RWM
R
V
DYN
I
Maximum Reverse Leakage Current @ V
R
RWM
V
BR
Breakdown Voltage @ I
V
V
V
T
CL BR RWM
V
I
R
I
T
I
Test Current
CL
T
V
Holding Reverse Voltage
Holding Reverse Current
Dynamic Resistance
Maximum Peak Pulse Current
HOLD
HOLD
R
I
DYN
R
DYN
I
PP
I
PP
Uni−Directional Surge Protection
V
C
Clamping Voltage @ I
PP
V
= V
+ (I * R
)
C
HOLD
PP
DYN
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Parameter
Symbol
Conditions
Any I/O to GND (Note 1)
I = 10 mA, GND to All IO Pins
Min
Typ
Max
3.0
1.1
5.0
0.5
Unit
V
Reverse Working Voltage
Forward Voltage
V
RWM
V
F
0.5
3.2
0.85
3.5
V
F
Breakdown Voltage
V
BR
I = 1 mA, I/O to GND
T
V
Reverse Leakage Current
Clamping Voltage (Note 2)
I
R
V
RWM
= 3.0 V, I/O to GND
mA
V
V
C
I
PP
I
PP
I
PP
I
PP
= 1 A
4.0
6.0
8.0
10
5.0
6.5
10
= 10 A
= 25 A
= 35 A
15
Clamping Voltage
V
IEC61000−4−2, 8 kV Contact
See Figures 7 and 14
1.5 2.0
5.0
C
Junction Capacitance
C
V
R
V
R
= 0 V, f = 1 MHz between I/O Pins
pF
J
= 0 V, f = 1 MHz between I/O Pins and GND
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Surge protection devices are normally selected according to the working peak reverse voltage (V
than the DC or continuous peak operating voltage level.
), which should be equal or greater
RWM
2. Any I/O to GND (8/20 ms pulse).
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2
SZNSP8814
20
18
t = rise time to peak value [8 ms]
t = decay time to half value [20 ms]
f
r
Peak
Value
100
16
14
12
10
8
IO−IO
Half Value
50
0
IO−GND
6
4
2
0
0 t
r
t
f
0
5
10
15
I
20
25
30
35
(A)
TIME (ms)
pk
Figure 2. IEC61000−4−5 8/20 ms Pulse
Figure 3. Clamping Voltage vs. Peak Pulse Current
Waveform
(tp = 8/20 ms per Figure 2)
20
t = rise time to peak value [10 ms]
t = decay time to half value [700 ms]
f
r
18
16
14
12
10
8
Peak
Value
100
IO−IO
Half Value
50
0
6
IO−GND
4
2
0
0 t
r
t
f
0
2
4
6
8
10 12
I (A)
pk
14 16 18
20
TIME (ms)
Figure 5. Clamping Voltage vs. Peak Pulse Current
Figure 4. IEC61000−4−5 10/700 ms Pulse
(tp = 10/700 ms per Figure 4)
Waveform
90
80
70
60
50
40
30
20
10
0
10
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−10
−20
0
20
40
60
80
100
120 140
−20
0
20
40
60
80
100
120 140
TIME (ns)
TIME (ns)
Figure 6. IEC61000−2−4 +8 kV Contact
Figure 7. IEC61000−2−4 −8 kV Contact
Clamping Voltage
Clamping Voltage
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3
SZNSP8814
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
I
peak
First Peak
Current
(A)
100%
90%
Test Volt-
age (kV)
Current at
30 ns (A)
Current at
60 ns (A)
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
I @ 30 ns
22.5
30
12
16
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 8. IEC61000−4−2 Spec
Device
Under
Test
Oscilloscope
ESD Gun
50 W
Cable
50 W
Figure 9. Diagram of ESD Clamping Voltage Test Setup
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
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4
SZNSP8814
20
18
16
14
12
10
8
10
10
8
−20
−18
−16
−14
−12
−10
−8
8
6
6
4
4
6
−6
4
2
−4
2
2
−2
0
0
0
0
0
8
0
8
1
2
3
4
5
6
7
1
2
3
4
5
6
7
VOLTAGE (V)
VOLTAGE (V)
Figure 10. Positive TLP IV Curve
Figure 11. Negative TLP IV Curve
NOTE: TLP parameter: Z = 50 W, t = 100 ns, t = 300 ps, averaging window: t = 30 ns to t = 60 ns.
0
p
r
1
2
50 W Coax
Cable
Transmission Line Pulse (TLP) Measurement
L
Attenuator
S
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 12. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 13 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
÷
50 W Coax
Cable
I
M
V
M
10 MW
DUT
V
C
Oscilloscope
Figure 12. Simplified Schematic of a Typical TLP
System
Figure 13. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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5
SZNSP8814
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
1.E−11
1.E−12
IO−GND
IO−IO
−2
−1
0
1
2
3
4
5
6
0
0.5
1.0
1.5
V
Bias
2.0
(V)
2.5
3.0
3.5
V (V)
Figure 14. IV Characteristics
Figure 15. CV Characteristics
IO−GND
IO−GND
Figure 16. RF Insertion Loss
Figure 17. Capacitance Over Frequency
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6
SZNSP8814
1
2
3
4
5
6
DFN8
7
8
Black = Top Layer
Red = Other Layer
Figure 18. 10/100 Ethernet Layout Diagram and Flow−thru Routing Scheme
MagJack is a trademark of Bel Fuse Inc.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFNW8 2.2x2, 0.575P
CASE 515AE
ISSUE O
DATE 16 AUG 2018
GENERIC
MARKING DIAGRAM*
XX M
G
XX = Specific Device Code
M
= Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON96898G
WDFNW8 2.2x2, 0.575P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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