SZNUP2124MXWTBG [ONSEMI]
24V Dual Line CAN/CAN-FD Bus Protector;
| 型号： | SZNUP2124MXWTBG |
| 厂家： | 
ONSEMI |
| 描述： | 24V Dual Line CAN/CAN-FD Bus Protector |
| 文件： | 总11页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Dual Line CAN/CAN-FD
Bus Protector
XDFNW3
DUAL BIDIRECTIONAL
VOLTAGE SUPPRESSOR
SZNUP2124
1
2
3
The SZNUP2124 has been designed to protect both CAN and
CAN−FD transceivers from ESD and other harmful transient voltage
events. This device provides two channels of bidirectional protection
in a single, ultra−compact XDFNW3 1x1 mm package. The
combination of low turn−on voltage and low dynamic resistance
XDFNW3
CASE 521AC
(R ) gives the system designer a low cost option for improving
dyn
system reliability by working in conjunction with transceivers
utilizing advanced internal ESD structures.
PIN 1
PIN 2
PIN 3
Features
• Low Reverse Leakage Current (< 100 nA)
• Low Parasitic Capacitance (< 6 pF) for High Signal Integrity of
CAN_H
CAN_L
CAN−FD Data Rates
CAN
Transceiver
CAN Bus
• 175°C T
− Rated for High Temperature, Mission Critical
J(max)
Applications
• IEC Compatibility:
IEC 61000−4−2 (ESD): Level 4
IEC 61000−4−4 (EFT): 50 A (5/50 ns)
SZNUP2124
IEC 61000−4−5 (Lighting) 3.0 A (8/20 ms)
• ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A (1/50 ms)
• ISO 7637−3, Repetitive Electrical Fast Transient (EFT)
EMI Surge Pulses, 50 A (5/50 ns)
MARKING DIAGRAM
• Flammability Rating UL 94 V−0
24M
• Wettable Flank Package for optimal Automated Optical Inspection
(AOI)
24
M
= Specific Device Code
= Month Code
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Compliant
Applications
• Automotive Networks
♦ CAN / CAN−FD
♦ Low and High−Speed CAN
♦ Fault Tolerant CAN
♦ LIN
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
October, 2022 − Rev. 4
SZNUP2124/D
SZNUP2124
MAXIMUM RATINGS (T = 25°C, unless otherwise specified)
J
Symbol
Rating
Value
Unit
PPK
Peak Power Dissipation
W
8/20 ms Double Exponential Waveform (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
120
T
T
−55 to 175
−55 to 175
260
°C
°C
°C
J
J
L
T
Lead Solder Temperature (10 s)
ESD
Human Body Model (HBM)
16
28
28
24
30
30
kV
kV
kV
kV
kV
kV
IEC 61000−4−2 Contact
IEC 61000−4−2 Air
ISO 10605 Contact (330 pF / 330 W)
ISO 10605 Contact (330 pF / 2 kW)
ISO 10605 Contact (150 pF / 2 kW)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise specified)
J
Symbol
Parameter
Reverse Working Voltage
Breakdown Voltage
Test Conditions
Min
Typ
Max
24
Unit
V
V
RWM
(Note 2)
I = 1 mA (Note 3)
V
BR
26
27
33
V
T
I
Reverse Leakage Current
Clamping Voltage
V
= 24 V
100
40
nA
V
R
RWM
V
I
PP
= 1 A (8/20 ms Waveform),
C
(Note 4)
I
Maximum Peak Pulse Current
Capacitance
8/20 ms Waveform (Note 4)
3.0
A
PP
CJ
V
R
V
R
= 0 V, f = 1 MHz (Line to GND)
= 5 V, f = 1 MHz (Line to GND)
10
6.0
pF
DC
Diode Capacitance Matching
V
R
= 0 V, f = 1 MHz (Note 5)
0.25
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surge protection devices are normally selected according to the working peak reverse voltage (V
than the DC or continuous peak operating voltage level.
), which should be equal or greater
RWM
3. V is measured at pulse test current I .
BR
T
4. Pulse waveform per Figure 1.
5. DC is the percentage difference between C of lines 1 and 2 measured according to the test condition given in the electrical characteristics
J
table.
ORDERING INFORMATION
†
†
Device
Part Orientation
Package
Shipping
SZNUP2124MXWTAG*
SZNUP2124MXWTBG*
Pin 1 − Upper Left
Pin 1 − Upper Right
XDFNW3
(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
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2
SZNUP2124
TYPICAL PERFORMANCE CURVES
(T = 25°C unless otherwise noted)
J
1E−02
1E−03
1E−04
1E−05
1E−06
1E−07
1E−08
1E−09
1E−10
1E−11
10
8
6
4
2
0
1E−12
1E−13
−40
−30
−20 −10
0
10
20
30
40
−30 −25 −20 −15 −10 −5
0
5
10 15 20 25 30
V (V)
V
BIAS
(V)
Figure 1. IV Characteristics
Figure 2. CV Characteristics
1E−07
1E−08
1E−09
100
90
80
70
60
50
40
150°C
55°C
85°C
25°C
30
20
1E−10
1E−11
10
0
0
0
5
10
15
20
25
30
25
50
75
100
125
150
175
V , REVERSE BIAS VOLTAGE (V)
R
TEMPERATURE (°C)
Figure 4. Steady State Power Derating
Figure 3. IR vs. Temperature Characteristics
60
50
40
30
20
10
0
110
100
90
WAVEFORM
PARAMETERS
t = 8 ms
r
80
t = 20 ms
d
c−t
70
60
50
40
30
20
10
IO−GND
t = I /2
d
PP
0
0
5
10
15
t, TIME (ms)
20
25
30
0
1
2
3
4
I
(A)
PP
Figure 5. Pulse Waveform (8/20 ms)
Figure 6. Clamping Voltage vs. Peak Pulse Current
(8/20 ms)
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3
SZNUP2124
TYPICAL PERFORMANCE CURVES
(T = 25°C unless otherwise noted)
J
100
80
20
0
−20
60
40
20
−40
−60
0
−80
−20
−100
−20
0
20 40 60 80 100 120 140 160 180 200
TIME (ns)
−20
0
20 40 60 80 100 120 140 160 180 200
TIME (ns)
Figure 7. IEC61000−4−2 +8 kV Contact ESD
Figure 8. IEC61000−4−2 −8 kV Contact ESD
Clamping Voltage
Clamping Voltage
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4
SZNUP2124
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
I
peak
First Peak
Current
(A)
100%
90%
Test Volt-
age (kV)
Current at
30 ns (A)
Current at
60 ns (A)
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
I @ 30 ns
22.5
30
12
16
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 9. IEC61000−4−2 Spec
Device
Under
Test
Oscilloscope
ESD Gun
50 W
Cable
50 W
Figure 10. Diagram of ESD Clamping Voltage Test Setup
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
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SZNUP2124
20
18
16
14
12
10
8
10
10
8
−20
−18
−16
−14
−12
−10
−8
8
6
6
4
4
6
−6
4
2
−4
2
2
−2
0
0
0
0
0
50
0
50
10
20
30
40
10
20
30
40
VOLTAGE (V)
VOLTAGE (V)
Figure 11. Positive TLP IV Curve
Figure 12. Negative TLP IV Curve
NOTE: TLP parameter: Z = 50 W, t = 100 ns, t = 300 ps, averaging window: t = 30 ns to t = 60 ns.
0
p
r
1
2
50 W Coax
Cable
Transmission Line Pulse (TLP) Measurement
L
Attenuator
S
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 13. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 14 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
÷
50 W Coax
Cable
I
M
V
M
10 MW
DUT
V
C
Oscilloscope
Figure 13. Simplified Schematic of a Typical TLP
System
Figure 14. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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SZNUP2124
APPLICATIONS
Background
bidirectional surge protection device in a compact
XDFNW3 package. This device is based on
Zener technology that optimizes the active area of a PN
junction to provide robust protection against transient EMI
surge voltage and ESD. The SZNUP2124 has been tested to
EMI and ESD levels that exceed the specifications of
popular high speed CAN and CAN−FD networks.
The Controller Area Network (CAN) is a serial
communication protocol designed for providing reliable
high speed data transmission in harsh environments. surge
protection diodes provide a low cost solution to conducted
and radiated Electromagnetic Interference (EMI) and
Electrostatic Discharge (ESD) noise problems. The noise
immunity level and reliability of CAN transceivers can be
easily increased by adding external surge protection diodes
to prevent transient voltage failures.
CAN Physical Layer Requirements
Table 1 provides a summary of the system requirements
for a CAN transceiver. The ISO 11898−2 physical layer
specification forms the baseline for most CAN systems.
The SZNUP2124 provides a surge protection solution for
CAN data communication lines. The SZNUP2124 is a dual
Table 1. Transceiver Requirements for High−Speed CAN Networks
Parameter
ISO 11898−2
−3.0 V / 16 V
Min / Max Bus Voltage
(12 V System)
Common Mode Bus Voltage
CAN_L:
−2.0 V (min)
2.5 V (nom)
CAN_H:
2.5 V (nom)
7.0 V (max)
Transmission Speed
1.0 Mb/s @ 40 m
125 kb/s @ 500 m
ESD
Not specified, recommended w $8.0 kV (contact)
ISO 7637−3, pulses ‘a’ and ‘b’
EMI Immunity
Popular Applications
Automotive, Truck, Medical and Marine Systems
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7
SZNUP2124
EMI Specifications
61000−4 and ISO 7637 tests are similar; however, the IEC
standard was created as a generic test for any electronic
system, while the ISO 7637 standard was designed for
vehicular applications. The IEC61000−4−4 Electrical Fast
Transient (EFT) specification is similar to the ISO 7637−3
pulse 3a and b tests and is a requirement of SDS CAN
systems. The IEC 61000−4−5 test is used to define the power
absorption capacity of a surge protection device and long
duration voltage transients such as lightning. Table 2
provides a summary of the ISO 7637 and IEC 61000−4−X
test specifications. Table 3 provides the SZNUP2124’s ESD
test results.
The EMI protection level provided by the surge protection
device can be measured using the International Organization
for Standardization (ISO) 7637−2 and −3 specifications that
are representative of various noise sources. The ISO 7637−2
specification is used to define the susceptibility to coupled
transient noise on a 12 V power supply, while ISO 7637−3
defines the noise immunity tests for data lines. The ISO 7637
tests also verify the robustness and reliability of a design by
applying the surge voltage for extended durations.
The IEC 61000−4−X specifications can also be used to
quantify the EMI immunity level of a CAN system. The IEC
Table 2. ISO 7637 and IEC 61000−4−X Test Specifications
Test
Waveform
Test Specifications
SZNUP2124 Results
Simulated Noise Source
V = 0 to −100 V
I
= 1.75 A
DUT (Note 1) in parallel with
inductive load that is
disconnected from power
supply.
s
max
_
I
= 10 A
V
= TBD V
max
clamp max
duration
t
= 5000 pulses
Pulse 1
t
= 5000 pulses
duration
R = 10 W, t = 1.0 ms,
i
r
t
= 2000 ms, t = 2.5 s,
d_10%
1
ISO 7637−2
t = 200 ms, t = 100 ms
2
3
12 V Power Supply Lines
(Note 2)
V = 0 to +50 V
I
= 9.5 A
DUT in series with inductor
(wire harness) that is
disconnected from load.
s
max
coupled onto 14 V battery
V
_
= TBD V
clamp max
duration
I
= 10 A
t
= 5000 pulses
max
Pulse 2a
Ri = 2 W, t = 1.0 ms,
r
t
= 5000 pulses
duration
t
= 50 ms, t = 2.5 s,
d_10%
1
t = 200 ms
2
V = −60 V
max
I
= 50 A (Note 4)
Switching noise of inductive
loads.
s
max
Pulse ‘a’
Pulse ‘b’
V
_
= TBD V
I
= 1.2 A
clamp max
t
= 60 minutes
duration
ISO 7637−3
t
= 10 minutes
duration
R = 50 W, t = 5.0 ns,
d_10%
t = 10 ms, t = 90 ms
2
i
r
Repetitive data line fast
transients (Note 3)
V = +40 V
s
max
t
= 100 ns, t = 100 ms,
1
I
= 0.8 A
3
t
= 10 minutes
duration
V
= 2.0 kV
= 40 A
(Note 5)
Switching noise of inductive
loads.
open circuit
short circuit
I
(Level 4 = Severe Industrial
Environment)
IEC 61000−4−4
R = 50 W, t < 5.0 ns,
i
r
Data Line EFT
t
= 50 ns, t
= 15 ms,
d_50%
burst
f
= 2.0 to 5.0 kHz,
repeat
burst
t
= 300 ms
= 1 minute
t
duration
V
= 1.2/50 ms,
= 8/20 ms
I
= 8.0 A
Lightning, nonrepetitive
power line and load
switching
open circuit
short circuit
max
I
IEC 61000−4−5
R = 50 W
i
1. DUT = device under test.
2. Test specifications were taken from ISO7637−2: 2004 version.
3. Test specifications were taken from ISO7637−3: 1995 version.
4. DUT was tested to ISO7637−2: 2004 pulse 3a,b specification for more rigorous test.
5. The EFT immunity level was measured with test limits beyond the IEC 61000−4−4 test, but with the more severe test conditions of
ISO 7637−3.
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8
SZNUP2124
Table 3. SZNUP2124 ESD Test Results
ESD Specification
Test
Test Level
Pass / Fail
Human Body Model
Contact
Contact
8 kV
Pass
Pass
Pass
12.5 kV
12.5 kV
IEC 61000−4−2
Non−contact (Air Discharge)
Surge protection Diode Protection Circuit
CAN_H
CAN_L
ESD diodes provide protection to a transceiver by
clamping a surge voltage to a safe level. ESD diodes have
high impedance below and low impedance above their
breakdown voltage. An ESD diode has its junction
optimized to absorb the high peak energy of a transient
event, while a standard diode is designed and specified to
clamp a steady state voltage.
CAN
Transceiver
CAN Bus
NUP2124L
Figure 15 provides an example of a dual bidirectional
ESD diode array that can be used for protection with the
high−speed CAN network. The clamping voltage of the
composite device is equal to the breakdown voltage of the
diode that is reversed biased, plus the diode drop of the
second diode that is forwarded biased.
Figure 15. CAN ESD Circuit
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SZNUP2124
PACKAGE DIMENSIONS
XDFNW3 1x1, 0.65P
CASE 521AC
ISSUE A
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10
SZNUP2124
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