SZNUP3125WTT3G [ONSEMI]

32V 双线路 CAN 总线保护器，采用 SC-70 (SOT-323) 封装;


型号：	SZNUP3125WTT3G
厂家：	ONSEMI
描述：	32V 双线路 CAN 总线保护器，采用 SC-70 (SOT-323) 封装
文件：	总6页 (文件大小：206K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CAN Bus Protector,

Dual Line

NUP3125, SZNUP3125

The SZ/NUP3125 has been designed to protect the CAN transceiver

in 24 V designs from ESD and other harmful surge protection events.

This device provides bidirectional protection for each data line with a

single compact SC−70 (SOT−323) package, giving the system

designer a low cost option for improving system reliability and

meeting stringent EMI requirements.

www.onsemi.com

MARKING

DIAGRAM

Features

• 120 W Peak Power Dissipation per Line (8/20 ms Waveform)

• Diode Capacitance Matching

SC−70

CASE 419

42MG

• Low Reverse Leakage Current (< 100 nA)

• IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4

− IEC 61000−4−4 (EFT): 50 A – 5/50 ns

− IEC 61000−4−5 (Lighting) 2.0 A (8/20 ms)

• Flammability Rating UL 94 V−0

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

= Specific Device Code

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

PIN 1

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

PIN 3

PIN 2

Applications

• Automotive Networks

♦ CAN / CAN−FD

♦ Low and High−Speed CAN

♦ Fault Tolerant CAN

♦ Trucks

CAN_H

CAN_L

CAN

Transceiver

CAN Bus

SZ/NUP3125

• Industrial Control Networks

♦ Smart Distribution Systems (SDS)

♦ DeviceNet

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

July, 2021 − Rev. 2

NUP3125/D

NUP3125, SZNUP3125

MAXIMUM RATINGS (T = 25°C, unless otherwise specified)

Symbol

Rating

Value

120

Unit

Peak Power Dissipation, 8/20 ms Double Exponential Waveform (Note 1)

Operating Junction Temperature Range

Storage Temperature Range

−55 to 150

260

°C

Lead Solder Temperature (10 s)

°C

ESD

Human Body Model (HBM)

Machine Model (MM)

IEC 61000−4−2 (Contact)

IEC 61000−4−2 (Air)

8.0

1.6

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Non−repetitive current pulse per Figure 1.

ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise specified)

Symbol

Parameter

Reverse Working Voltage

Breakdown Voltage

Test Conditions

Min

−

Typ

−

Max

Unit

RWM

(Note 2)

I = 1 mA (Note 3)

35.6

−

Reverse Leakage Current

Clamping Voltage

RWM

= 32 V

100

8/20 ms Waveform (Note 4)

= 1 A

= 2 A

−

Maximum Peak Pulse Current

Capacitance

8/20 ms Waveform (Note 4)

−

2.0

= 0 V, f = 1 MHz (Line to GND)

= 5 V, f = 1 MHz (Line to GND)

= 5 V, f = 1 MHz (Line to GND),

5.7

4.5

5.0

6.0

T = 150°C

Diode Capacitance Matching

= 0 V, 5 MHz (Note 5)

−

0.26

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Surge protection devices are normally selected according to the working peak reverse voltage (V

than the DC or continuous peak operating voltage level.

), which should be equal or greater

RWM

3. V is measured at pulse test current I .

4. Pulse waveform per Figure 1.

5. DC is the percentage difference between C of lines 1 and 2 measured according to the test conditions given in the electrical characteristics

table.

ORDERING INFORMATION

†

Device

Package

Shipping

NUP3125WTT1G

SC−70

(Pb−Free)

3000 / Tape & Reel

SZNUP3125WTT1G

NUP3125WTT3G

SC−70

3000 / Tape & Reel

10000 / Tape & Reel

(Pb−Free)

SC−70

(Pb−Free)

SZNUP3125WTT3G

SC−70

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

www.onsemi.com

NUP3125, SZNUP3125

TYPICAL PERFORMANCE CURVES

(T = 25°C unless otherwise noted)

110

100

WAVEFORM

PARAMETERS

t = 8 ms

t = 20 ms

25°C

65°C

c−t

t = I /2

−55°C

125°C

t, TIME (ms)

ZENER VOLTAGE (V)

Figure 1. Pulse Waveform, 8/20 ms

Figure 2. IV Characteristics

2.5

2.0

1.5

1.0

Pulse Waveform

8 x 20 ms per

Figure 1

65°C

125°C

25°C

−55°C

0.5

V , CLAMPING VOLTAGE (V)

I , LEAKAGE CURRENT (nA)

Figure 4. Clamping Voltage vs. Peak Pulse Current

Figure 3. IR vs Temperature Characteristics

120

100

−60

−30

120

150 180

TEMPERATURE (°C)

Figure 5. Temperature Power Dissipation Derating

www.onsemi.com

NUP3125, SZNUP3125

Surge Protection Diode Circuit

breakdown voltage of the diode that is reversed biased, plus

the diode drop of the second diode that is forwarded biased.

Surge protection diodes provide protection to a

transceiver by clamping a surge voltage to a safe level. Surge

protection diodes have high impedance below and low

impedance above their breakdown voltage. A surge

protection Zener diode has its junction optimized to absorb

the high peak energy of a transient event, while a standard

Zener diode is designed and specified to clamp a

steady state voltage.

CAN_H

CAN

Transceiver

CAN Bus

CAN_L

SZ/NUP3125

Figure 6 provides an example of a dual bidirectional surge

protection diode array that can be used for protection with

the high−speed CAN network. The bidirectional array is

created from four identical Zener TVS diodes. The

clamping voltage of the composite device is equal to the

Figure 6. High−Speed and Fault Tolerant CAN Surge

Protection Circuit

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SC−70 (SOT−323)

CASE 419

ISSUE R

DATE 11 OCT 2022

SCALE 4:1

GENERIC

MARKING DIAGRAM

XX MG

= Specific Device Code

= Date Code

= Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

STYLE 1:

STYLE 2:

PIN 1. ANODE

2. N.C.

3. CATHODE

STYLE 3:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 4:

STYLE 5:

PIN 1. ANODE

2. ANODE

3. CATHODE

CANCELLED

PIN 1. CATHODE

2. CATHODE

3. ANODE

STYLE 6:

STYLE 7:

PIN 1. BASE

STYLE 8:

PIN 1. GATE

2. SOURCE

3. DRAIN

STYLE 9:

STYLE 10:

STYLE 11:

PIN 1. EMITTER

PIN 1. ANODE

PIN 1. CATHODE

2. ANODE

PIN 1. CATHODE

2. CATHODE

2. BASE

2. EMITTER

2. CATHODE

3. COLLECTOR

3. CATHODE-ANODE

3. ANODE-CATHODE

3. CATHODE

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98ASB42819B

SC−70 (SOT−323)

PAGE 1 OF 1

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ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

www.onsemi.com/support/sales



SZNUP3125WTT3G [ONSEMI]

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