SZNZQA5V6AXV5T1G [ONSEMI]
低电容 ESD 阵列;
| 型号： | SZNZQA5V6AXV5T1G |
| 厂家： | 
ONSEMI |
| 描述： | 低电容 ESD 阵列 局域网 测试 光电二极管 瞬态抑制器 |
| 文件： | 总5页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NZQA5V6AXV5 Series
Transient Voltage Suppressors
ESD Protection Diode with Low Clamping
Voltage
This integrated transient voltage suppressor device (TVS) is
designed for applications requiring transient overvoltage protection. It
is intended for use in sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment, and
other applications. Its integrated design provides very effective and
reliable protection for four separate lines using only one package.
These devices are ideal for situations where board space is at a premium.
Features
• Low Clamping Voltage
• Small SOT−553 SMT Package
• Stand Off Voltage: 3 V
• Low Leakage Current
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1
2
3
5
4
• Four Separate Unidirectional Configurations for Protection
• ESD Protection: IEC61000−4−2: Level 4 ESD Protection
MILSTD 883C − Method 3015−6: Class 3
• Complies to USB 1.1 Low Speed & Full Speed Specifications
SOT−553
CASE 463B
PLASTIC
• These are Pb−Free Devices
Benefits
• Provides Protection for ESD Industry Standards: IEC 61000, HBM
• Protects Four Lines Against Transient Voltage Conditions
• Minimize Power Consumption of the System
MARKING DIAGRAM
• Minimize PCB Board Space
Typical Applications
• Instrumentation Equipment
• Serial and Parallel Ports
xx M G
G
• Microprocessor Based Equipment
• Notebooks, Desktops, Servers
• Cellular and Portable Equipment
xx
M
G
= Device Code
= Date Code*
= Pb−Free Package
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
(Note: Microdot may be in either location)
Characteristic
Symbol
Value
20
Unit
W
mW
Peak Power Dissipation (Note 1)
Steady State Power − 1 Diode (Note 2)
P
PK
P
D
380
ORDERING INFORMATION
Thermal Resistance,
Junction−to−Ambient
Above 25°C, Derate
R
327
3.05
°C/W
mW/°C
q
JA
†
Device
Package
Shipping
NZQA5V6AXV5T1
SOT−553* 4000/Tape & Reel
Maximum Junction Temperature
T
150
°C
°C
Jmax
NZQA5V6AXV5T1G SOT−553* 4000/Tape & Reel
NZQA6V8AXV5T1 SOT−553* 4000/Tape & Reel
NZQA6V8AXV5T1G SOT−553* 4000/Tape & Reel
Operating Junction and Storage
Temperature Range
T T
J
−55 to
+150
stg
Lead Solder Temperature (10 seconds
duration)
T
260
°C
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Non−repetitive current per Figure 5.
NZQA6V8AXV5T3
SOT−553* 16000/Tape & Reel
NZQA6V8AXV5T3G SOT−553* 16000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2. Only 1 diode under power. For all 4 diodes under power, P will be 25%.
D
Mounted on FR−4 board with min pad.
See Application Note AND8308/D for further description of
survivability specs.
*This package is inherently Pb−Free.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
September, 2009 − Rev. 7
NZQA5V6AXV5/D
NZQA5V6AXV5 Series
ELECTRICAL CHARACTERISTICS
I
(T = 25°C unless otherwise noted)
A
I
F
Symbol
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
I
PP
V
C
PP
V
C
V
V
V
Working Peak Reverse Voltage
BR RWM
RWM
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V
I
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
QV
Maximum Temperature Coefficient of V
Forward Current
I
PP
BR
BR
I
F
Uni−Directional
V
F
Forward Voltage @ I
F
Z
Maximum Zener Impedance @ I
Reverse Current
ZT
ZT
I
ZK
Z
Maximum Zener Impedance @ I
ZK
ZK
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Typ
Typ
Capacitance Capacitance
@ 0 V Bias
(pF)
(Note 3)
@ 3 V Bias
(pF)
(Note 3)
Breakdown
Voltage
Leakage
V
C
Max @ I
(Note 4)
Current
@ V
RM
PP
V
@ 1 mA (V)
I
V
C
BR
RM
Per
I
V
(V)
I
IEC61000−4−2
(Note 5)
Device
Marking Min Nom Max
RWM
C
PP
(mA)
(A)
V
RWM
Typ
Max
Typ
Max
Device
NZQA5V6AXV5
5P
5.3
5.6
5.9
3.0
1.0
13
1.6
13
17
7.0
11.5
Figures 1 and 2
(See Below)
NZQA6V8AXV5
6H
6.47
6.8
7.14
4.3
1.0
13
1.6
12
15
6.7
9.5
3. Capacitance of one diode at f = 1 MHz, V = 0 V, T = 25°C
R
A
4. Surge current waveform per Figure 5.
5. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 1. ESD Clamping Voltage Screenshot
Figure 2. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Negative 8 kV Contact per IEC61000−4−2
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2
NZQA5V6AXV5 Series
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
I
peak
Test
Voltage
(kV)
First Peak
Current
(A)
100%
90%
Current at
30 ns (A)
Current at
60 ns (A)
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
I @ 30 ns
22.5
30
12
16
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 3. IEC61000−4−2 Spec
Oscilloscope
ESD Gun
TVS
50 W
Cable
50 W
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
100
t
r
PEAK VALUE I
@ 8 ms
RSM
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I /2 @ 20 ms
RSM
t
P
10
0
0
20
40
t, TIME (ms)
60
80
Figure 5. 8 X 20 ms Pulse Waveform
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3
NZQA5V6AXV5 Series
TYPICAL ELECTRICAL CHARACTERISTICS − NZQA6V8AXV5
100
110
100
90
80
70
60
50
40
30
20
10
10
0
1
0
25
50
75
100
125
150
1
10
100
1000
t, TIME (ms)
T , AMBIENT TEMPERATURE (°C)
A
Figure 7. Power Derating Curve
Figure 6. Pulse Width
0.16
0.14
0.12
0.10
0.08
0.06
0.04
14
12
10
8
T = 25°C
A
6
4
2
0
0.02
0
−60 −40 −20
0
20
40
60
80
100
0
1
2
3
4
5
6
T, TEMPERATURE (°C)
BIAS VOLTAGE (V)
Figure 8. Reverse Leakage versus
Temperature
Figure 9. Capacitance
1
0.1
0.01
T = 25°C
A
0.001
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V , FORWARD VOLTAGE (V)
F
Figure 10. Forward Voltage
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4
NZQA5V6AXV5 Series
PACKAGE DIMENSIONS
SOT−553, 5 LEAD
CASE 463B−01
ISSUE B
D
−X−
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
L
5
4
3
E
−Y−
H
MILLIMETERS
INCHES
NOM
0.022
0.009
0.005
E
DIM
A
b
c
D
E
MIN
0.50
0.17
0.08
1.50
1.10
NOM
0.55
MAX
MIN
MAX
0.024
0.011
0.007
0.067
0.051
1
2
0.60
0.27
0.18
1.70
1.30
0.020
0.007
0.003
0.059
0.043
0.22
0.13
b 5 PL
c
1.60
0.063
0.047
e
M
0.08 (0.003)
X Y
1.20
e
L
0.50 BSC
0.20
1.60
0.020 BSC
0.008
0.063
0.10
1.50
0.30
1.70
0.004
0.059
0.012
0.067
H
E
STYLE 2:
PIN 1. CATHODE
2. COMMON ANODE
3. CATHODE 2
4. CATHODE 3
5. CATHODE 4
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,
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NZQA5V6AXV5/D
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