SZP6SMB39CAT3G [ONSEMI]
600 Watt SMB Transient Voltage Suppressor, 39 V, Bidirectional 600 Watt SMB Transient Voltage Suppressor, 39 V, Bidirectional, SMB, 2500-REEL;
| 型号： | SZP6SMB39CAT3G |
| 厂家： | 
ONSEMI |
| 描述： | 600 Watt SMB Transient Voltage Suppressor, 39 V, Bidirectional 600 Watt SMB Transient Voltage Suppressor, 39 V, Bidirectional, SMB, 2500-REEL 光电二极管 |
| 文件： | 总6页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P6SMB11CAT3G Series,
SZP6SMB11CAT3G Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
http://onsemi.com
Bidirectional*
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
9.4−78 VOLTS
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
SURMETIC package and is ideally suited for use in
600 WATT PEAK POWER
communication systems, automotive, numerical controls, process
controls, medical equipment, business machines, power supplies and
many other industrial/consumer applications.
Features
SMB
CASE 403A
PLASTIC
Working Peak Reverse Voltage Range − 9.4 to 77.8 V
Standard Zener Breakdown Voltage Range − 11 to 91 V
Peak Power − 600 W @ 1 ms
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 mA Above 10 V
MARKING DIAGRAM
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
AYWW
xxC G
G
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available**
xxC = Device Code
Mechanical Characteristics:
A
Y
= Assembly Location
= Year
CASE: Void-Free, Transfer-Molded, Thermosetting Plastic
FINISH: All External Surfaces are Corrosion Resistant and Leads are
Readily Solderable
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
LEADS: Modified L−Bend Providing More Contact Area to Bond Pads
POLARITY: Polarity Band Will Not be Indicated
MOUNTING POSITION: Any
ORDERING INFORMATION
†
Device
Package
Shipping
P6SMBxxCAT3G
SMB
2,500 /
(Pb−Free)
Tape & Reel
SZP6SMBxxCAT3G
SMB
2,500 /
(Pb−Free)
Tape & Reel
The “T3” suffix refers to a 13 inch reel.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices.
**For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
February, 2012 − Rev. 12
P6SMB11CAT3/D
P6SMB11CAT3G Series, SZP6SMB11CAT3G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T = 25C, Pulse Width = 1 ms
Symbol
Value
Unit
P
PK
600
W
L
DC Power Dissipation @ T = 75C Measured Zero Lead Length (Note 2)
P
3.0
40
25
W
mW/C
C/W
L
D
Derate Above 75C
Thermal Resistance, Junction−to−Lead
R
q
JL
DC Power Dissipation (Note 3) @ T = 25C
P
0.55
4.4
226
W
mW/C
C/W
A
D
Derate Above 25C
Thermal Resistance, Junction−to−Ambient
R
q
JA
Operating and Storage Temperature Range
T , T
−65 to +150
C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive
2. 1 square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
ELECTRICAL CHARACTERISTICS
(T = 25C unless otherwise noted)
A
I
I
PP
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
PP
I
T
I
V
R
BR RWM
V
C
V
V
Clamping Voltage @ I
PP
C
V
I
R
T
V
V
V
RWM BR C
V
RWM
Working Peak Reverse Voltage
I
I
R
Maximum Reverse Leakage Current @ V
RWM
V
Breakdown Voltage @ I
BR
T
I
PP
I
Test Current
T
Bi−Directional TVS
QV
Maximum Temperature Coefficient of V
BR
BR
ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Breakdown Voltage
V @ I (Note 6)
C PP
V
RWM
I
R
@
C
typ
V
BR
Volts (Note 5)
@ I
V
C
I
PP
(Note 4)
V
RWM
(Note 7)
QV
T
BR
Device
Min
Nom
Max
mA
Volts
mA
Volts
Amps
%/C
pF
Marking
Device*
P6SMB11CAT3G
P6SMB12CAT3G
11C
12C
9.4
10.2
5
5
10.5
11.4
11.05
12
11.6
12.6
1
1
15.6
16.7
38
36
0.075
0.078
865
800
P6SMB15CAT3G
P6SMB16CAT3G
P6SMB18CAT3G
P6SMB20CAT3G
15C
16C
18C
20C
12.8
13.6
15.3
17.1
5
5
5
5
14.3
15.2
17.1
19
15.05
16
15.8
16.8
18.9
21
1
1
1
1
21.2
22.5
25.2
27.7
28
27
24
22
0.084
0.086
0.088
0.09
645
610
545
490
18
20
P6SMB22CAT3G
P6SMB24CAT3G
P6SMB27CAT3G
P6SMB30CAT3G
22C
24C
27C
30C
18.8
20.5
23.1
25.6
5
5
5
5
20.9
22.8
25.7
28.5
22
24
27.05
30
23.1
25.2
28.4
31.5
1
1
1
1
30.6
33.2
37.5
41.4
20
18
0.09
0.094
0.096
0.097
450
415
370
335
16
14.4
P6SMB33CAT3G
P6SMB36CAT3G
P6SMB39CAT3G
P6SMB43CAT3G
33C
36C
39C
43C
28.2
30.8
33.3
36.8
5
5
5
5
31.4
34.2
37.1
40.9
33.05
36
39.05
43.05
34.7
37.8
41
1
1
1
1
45.7
49.9
53.9
59.3
13.2
12
11.2
10.1
0.098
0.099
0.1
305
280
260
240
45.2
0.101
P6SMB47CAT3G
P6SMB51CAT3G
P6SMB56CAT3G
P6SMB62CAT3G
47C
51C
56C
62C
40.2
43.6
47.8
53
5
5
5
5
44.7
48.5
53.2
58.9
47.05
51.05
56
49.4
53.6
58.8
65.1
1
1
1
1
64.8
70.1
77
9.3
8.6
7.8
7.1
0.101
0.102
0.103
0.104
220
205
185
170
62
85
P6SMB68CAT3G
P6SMB75CAT3G
P6SMB82CAT3G
68C
75C
82C
58.1
64.1
70.1
5
5
5
64.6
71.3
77.9
68
75.05
82
71.4
78.8
86.1
1
1
1
92
103
113
6.5
5.8
5.3
0.104
0.105
0.105
155
140
130
4. A transient suppressor is normally selected according to the working peak reverse voltage (V
the DC or continuous peak operating voltage level.
), which should be equal to or greater than
RWM
5. V measured at pulse test current I at an ambient temperature of 25C.
BR
T
6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data − 600 Watt at the beginning of this group.
7. Bias Voltage = 0 V, F = 1 MHz, T = 25C
J
*Include SZ-prefix devices where applicable.
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2
P6SMB11CAT3G Series, SZP6SMB11CAT3G Series
100
10
PULSE WIDTH (t ) IS DEFINED AS
P
THAT POINT WHERE THE PEAK
NONREPETITIVE
t 10 ms
rꢀ
PULSE WAVEFORM
SHOWN IN FIGURE 2
CURRENT DECAYS TO 50% OF
I .
PP
100
50
0
PEAK VALUE - I
PP
I
PP
2
HALF VALUE -
1
t
P
0.1
0.1 ms
1 ms
10 ms
100 ms
1 ms
10 ms
0
1
2
3
4
5
t , PULSE WIDTH
P
t, TIME (ms)
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
1000
100
10
160
140
120
P6SMB11CAT3G
P6SMB18CAT3G
P6SMB47CAT3G
100
80
P6SMB91CAT3G
60
40
20
0
T = 25C
f = 1 MHz
J
1
0
25
50
75
100
125
150
1
10
100
T , AMBIENT TEMPERATURE (C)
A
BIAS VOLTAGE (VOLTS)
Figure 3. Pulse Derating Curve
Figure 4. Typical Junction Capacitance vs. Bias
Voltage
TYPICAL PROTECTION CIRCUIT
Z
in
LOAD
V
in
V
L
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3
P6SMB11CAT3G Series, SZP6SMB11CAT3G Series
APPLICATION NOTES
Response Time
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated with
the capacitance of the device and an overshoot condition
associated with the inductance of the device and the inductance
of the connection method. The capacitive effect is of minor
importance in the parallel protection scheme because it only
produces a time delay in the transition from the operating
voltage to the clamp voltage as shown in Figure 4.
The inductive effects in the device are due to actual turn-on
time (time required for the device to go from zero current to full
current) and lead inductance. This inductive effect produces an
overshoot in the voltage across the equipment or component
being protected as shown in Figure 5. Minimizing this
overshoot is very important in the application, since the main
purpose for adding a transient suppressor is to clamp voltage
spikes. The SMB series have a very good response time,
typically < 1 ns and negligible inductance. However, external
inductive effects could produce unacceptable overshoot.
Proper circuit layout, minimum lead lengths and placing the
Some input impedance represented by Z is essential to
in
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
Duty Cycle Derating
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves of
Figure 6. Average power must be derated as the lead or ambient
temperature rises above 25C. The average power derating
curve normally given on data sheets may be normalized and
used for this purpose.
At first glance the derating curves of Figure 6 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
V
in
(TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
V
V
in
(TRANSIENT)
V
L
V
L
V
in
t
d
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 5.
Figure 6.
1
0.7
0.5
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
0.02
100 ms
10 ms
10 20
D, DUTY CYCLE (%)
0.01
0.1 0.2
0.5
1
2
5
50 100
Figure 7. Typical Derating Factor for Duty Cycle
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4
P6SMB11CAT3G Series, SZP6SMB11CAT3G Series
UL RECOGNITION
The entire series has Underwriters Laboratory
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric
Recognition for the classification of protectors (QVGQ2)
under the UL standard for safety 497B and File #E210057.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
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5
P6SMB11CAT3G Series, SZP6SMB11CAT3G Series
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE H
H
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
E
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
H
E
L
L1
MIN
1.90
0.05
1.96
0.15
3.30
4.06
5.21
0.76
NOM
2.20
0.10
2.03
0.23
3.56
4.32
5.44
1.02
MAX
MIN
NOM
0.087
0.004
0.080
0.009
0.140
0.170
0.214
0.040
MAX
0.090
0.007
0.087
0.012
0.156
0.181
0.220
0.063
2.28
0.19
2.20
0.31
3.95
4.60
5.60
1.60
0.075
0.002
0.077
0.006
0.130
0.160
0.205
0.030
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
0.51 REF
0.020 REF
A
A1
c
L
L1
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
mm
inches
ǒ
Ǔ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SURMETIC is a registered trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
P6SMB11CAT3/D
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