SZSMF10AT3G [ONSEMI]
DIODE TVS DIODE, Transient Suppressor;
| 型号： | SZSMF10AT3G |
| 厂家： | 
ONSEMI |
| 描述： | DIODE TVS DIODE, Transient Suppressor 电视 |
| 文件： | 总6页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMF5.0AT1G Series,
SZSMF5.0AT1G Series
200 W Transient
Voltage Suppressor
SOD-123 Flat Lead Package
http://onsemi.com
The SMF5.0AT1G Series is designed to protect voltage sensitive
components from high voltage, high energy transients. Excellent
clamping capability, high surge capability, low zener impedance and
fast response time. Because of its small size, it is ideal for use in
cellular phones, portable devices, business machines, power supplies
and many other industrial/consumer applications.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
5 − 58 VOLTS
200 WATT PEAK POWER
Features
Stand−off Voltage: 5 − 58 Volts
Peak Power − 200 Watts @ 1 ms (SMF5.0A − SMF58A)
Low Leakage
Response Time is Typically < 1 ns
SOD−123FL
CASE 498
PLASTIC
ESD Rating of Class 3 (> 16 kV) per Human Body Model
ESD Rating of Level 4 (8 kV Contact Discharge) per IEC61000−4−2
EFT (Electrical Fast Transients) Rating of 40 A per IEC61000−4−4
Low Profile − Maximum Height of 1.0 mm
Small Footprint − Footprint Area of 8.45 mm
Supplied in 8 mm Tape and Reel − 3,000 Units per Reel
Cathode Indicated by Polarity Band
1
2
2
1: CATHODE
2: ANODE
MARKING DIAGRAM
Lead Orientation in Tape: Cathode Lead to Sprocket Holes
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
xx M G
1
2
G
CATHODE
ANODE
Pb−Free Packages are Available*
xx = Device Code (Refer to page 3)
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V−0
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260C
Device Meets MSL 1 Requirements
ORDERING INFORMATION
†
Device
Package
Shipping
SMFxxxAT1G
SOD−123FL
(Pb−Free)
3,000 /
Tape & Reel
SZSMFxxxAT3G SOD−123FL
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
February, 2012 − Rev. 5
SMF5.0AT1/D
SMF5.0AT1G Series, SZSMF5.0AT1G Series
MAXIMUM RATINGS
Rating
Maximum P Dissipation (PW−10/1000 ms) (Note 1) SMF5.0A − SMF58A
Symbol
Value
200
Unit
W
P
pk
P
pk
pk
Maximum P Dissipation @ T = 25C, (PW−8/20 ms) (Note 2)
1000
W
pk
A
DC Power Dissipation
@ T = 25C (Note 3)
P
385
4.0
mW
mW/C
C/W
A
D
Derate above 25C
Thermal Resistance, Junction−to−Ambient (Note 3)
Thermal Resistance, Junction−to−Lead (Note 3)
Operating and Storage Temperature Range
R
325
q
JA
R
26
C/W
C
q
Jcathode
T , T
−55 to +150
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non−repetitive current pulse at T = 25C, per waveform of Figure 2.
A
2. Non−repetitive current pulse at T = 25C, per waveform of Figure 3.
A
3. Mounted with recommended minimum pad size, DC board FR−4.
ELECTRICAL CHARACTERISTICS (T = 25C unless
A
I
otherwise noted, V = 3.5 V Max. @ I (Note 4) = 12 A)
F
F
I
F
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
V
C
PP
V
C
V
V
V
Working Peak Reverse Voltage
BR RWM
RWM
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V
I
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
I
PP
V
F
Forward Voltage @ I
F
Uni−Directional TVS
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
duty cycle = 4 pulses per minute maximum.
http://onsemi.com
2
SMF5.0AT1G Series, SZSMF5.0AT1G Series
ELECTRICAL CHARACTERISTICS (T = 30C unless otherwise noted, V = 1.25 Volts @ 200 mA)
L
F
V
RWM
(V)
V
BR
@ I (V) (Note 6)
I
T
I
R
@ V
V
I
(A)
T
RWM
C(Max)
PP(Max)
(Note 5)
5
Min
Nom
6.7
Max
(mA)
10
10
10
10
1
(mA)
400
400
250
100
50
25
5
(V)
(Note 7)
21.7
19.4
17.9
16.7
15.5
14.7
13.0
11.8
11.0
10.1
9.3
Device*
SMF5.0AG
SMF6.0AG
SMF6.5AG
SMF7.0AG
SMF7.5AG
SMF8.0AG
SMF9.0AG
SMF10AG
SMF11AG
SMF12AG
SMF13AG
SMF14AG
SMF15AG
SMF18AG
SMF20AG
SMF22AG
SMF24AG
SMF26AG
SMF28AG
SMF30AG
SMF33AG
SMF36AG
SMF48AG
SMF51AG
SMF58AG
Marking
KE
KG
KK
KM
KP
KR
KV
KX
KZ
6.4
6.67
7.22
7.78
8.33
8.89
10
7
9.2
6
7.02
7.6
7.37
7.98
8.6
10.3
11.2
12
6.5
7
8.2
7.5
8
8.77
9.36
10.55
11.7
12.85
14
9.21
9.83
11.1
12.3
13.5
14.7
15.9
17.2
18.5
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
58.9
62.7
71.2
12.9
13.6
15.4
17
1
9
1
10
11
12
13
14
15
18
20
22
24
26
28
30
33
36
48
51
58
11.1
12.2
13.3
14.4
15.6
16.7
20
1
2.5
2.5
2.5
1
1
18.2
19.9
21.5
23.2
24.4
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
77.4
82.4
93.6
LE
1
LG
LK
15.15
16.4
17.6
21
1
1
1
8.6
LM
LT
1
1
8.2
1
1
6.8
LV
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40
23.35
25.6
28.1
30.4
32.8
35.1
38.7
42.1
56.1
59.7
67.8
1
1
6.2
LX
1
1
5.6
LZ
1
1
5.1
ME
MG
MK
MM
MP
MX
MZ
NG
1
1
4.8
1
1
4.4
1
1
4.1
1
1
3.8
1
1
3.4
53.3
56.7
64.4
1
1
2.6
1
1
2.4
1
1
2.1
5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (V
than the DC or continuous peak operating voltage level.
) which should be equal to or greater
RWM
6. V measured at pulse test current I at ambient temperature of 25C.
BR
T
7. Surge current waveform per Figure 2 and derate per Figure 3.
*Include SZ-prefix devices where applicable.
http://onsemi.com
3
SMF5.0AT1G Series, SZSMF5.0AT1G Series
TYPICAL PROTECTION CIRCUIT
Z
in
LOAD
V
in
V
L
10,000
1000
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50%
P
t
r
OF I
.
RSM
100
t 10 ms
r
PEAK VALUE − I
RSM
I
RSM
2
HALF VALUE −
50
0
100
10
t
P
1.0
10
100
t , PULSE WIDTH (ms)
1000
10,000
0
1
2
3
4
t, TIME (ms)
P
Figure 1. Pulse Rating Curve
Figure 2. 10 X 1000 ms Pulse Waveform
160
140
120
100
90
80
70
60
50
40
30
20
t
r
PEAK VALUE I
@ 8 ms
RSM
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
100
80
HALF VALUE I /2 @ 20 ms
RSM
60
t
P
40
20
0
10
0
0
25
50
75
100
125
150
0
20
40
t, TIME (ms)
60
80
T , AMBIENT TEMPERATURE (C)
A
Figure 3. 8 X 20 ms Pulse Waveform
Figure 4. Pulse Derating Curve
http://onsemi.com
4
SMF5.0AT1G Series, SZSMF5.0AT1G Series
400
350
1
0.7
0.5
300
0.3
0.2
250
PULSE WIDTH
10 ms
200
150
100
0.1
0.07
0.05
1 ms
0.03
0.02
100 ms
50
0
10 ms
10 20
0.01
0.1 0.2
0.5
1
2
5
50 100
0
25
50
75
100
125
150 175
D, DUTY CYCLE (%)
T, TEMPERATURE (C)
Figure 6. Steady State Power Derating
Figure 5. Typical Derating Factor for Duty Cycle
1000
1.2
1.0
0.8
0.6
0.4
MEASURED @ ZERO BIAS
100
MEASURED @ 50% V
RWM
10
1
0.2
0
1
10
100
1000
−55
25
85
150
WORKING PEAK REVERSE VOLTAGE (VOLTS)
T, TEMPERATURE (C)
Figure 7. Forward Voltage
Figure 8. Capacitance versus Working Peak
Reverse Voltage
http://onsemi.com
5
SMF5.0AT1G Series, SZSMF5.0AT1G Series
PACKAGE DIMENSIONS
SOD−123FL
CASE 498−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
q
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION
OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.
MILLIMETERS
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
D
DIM
A
A1
b
c
D
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0
NOM
0.95
0.05
0.90
0.15
1.65
2.70
0.75
3.60
−
MAX
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8
1.00
0.10
1.10
0.20
1.80
2.90
0.95
3.80
8
A1
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
E
L
L
H
E
q
b
SOLDERING FOOTPRINT*
0.91
0.036
H
E
q
1.22
0.048
c
2.36
0.093
4.19
mm
inches
0.165
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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SMF5.0AT1/D
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