T2322BG [ONSEMI]

Sensitive Gate Triacs Silicon Bidirectional Thyristors; 敏感的门双向可控硅硅双向晶闸管


型号：	T2322BG
厂家：	ONSEMI
描述：	Sensitive Gate Triacs Silicon Bidirectional Thyristors 敏感的门双向可控硅硅双向晶闸管触发装置可控硅三端双向交流开关栅局域网
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T2322B

Sensitive Gate Triacs

Silicon Bidirectional Thyristors

Designed primarily for ac power switching. The gate sensitivity of

these triacs permits the use of economical transistorized or integrated

circuit control circuits, and it enhances their use in low-power phase

control and load-switching applications.

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TRIACS

2.5 AMPERES RMS

200 VOLTS

Features

• Very High Gate Sensitivity

• Low On-State Voltage at High Current Levels

• Glass-Passivated Chip for Stability

• Small, Rugged Thermopad Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

• Pb−Free Package is Available*

MT2

MT1

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off-State Voltage (Note 1)

(T = 25 to 110°C, Gate Open)

200

DRM,

RRM

TO−225AA

(formerly TO−126)

CASE 077

On-State RMS Current (T = 70°C)

2.5

T(RMS)

(Full Cycle Sine Wave 50 to 60 Hz)

STYLE 5

Peak Non−Repetitive Surge Current (One

TSM

Full Cycle, Sine Wave 60 Hz, T = 70°C)

Circuit Fusing Consideration (t = 8.3 ms)

I t

2.6

A s

MARKING DIAGRAM

Peak Gate Power

(Pulse Width ≤ 10 ms, T = 70°C)

Average Gate Power (t = 8.3 ms, T = 70°C)

0.5

YWW

2322BG

G(AV)

Peak Gate Current

(Pulse Width = 10 ms, T = 70°C)

Operating Junction Temperature Range

Storage Temperature Range

−40 to +110

−40 to +150

8.0

°C

= Year

= Work Week

stg

Mounting Torque (6-32 Screw) (Note 2)

−

in. lb.

T2322B = Device Code

= Pb−Free Package

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

PIN ASSIGNMENT

1. V

and V

for all types can be applied on a continuous basis. Blocking

DRM

RRM

Main Terminal 1

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

2. Torque rating applies with use of torque washer (Shakeproof WD19523 or

equivalent). Mounting Torque in excess of 6 in. lb. does not appreciably

lower case-to-sink thermal resistance. Main terminal 2 and heat-sink

contact pad are common.

Main Terminal 2

Gate

ORDERING INFORMATION

Device

T2322B

T2322BG

Package

Shipping

TO225AA

500 Units/Box

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO225AA

(Pb−Free)

Publication Order Number:

May, 2006 − Rev. 5

T2322/D

T2322B

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

3.5

Unit

°C/W

°C

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Sec

260

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

DRM,

RRM

(V = Rated V , V Gate Open)

T = 25°C

−

0.2

0.75

DRM

RRM;

T = 110°C

ON CHARACTERISTICS

Peak On-State Voltage (Note 3)

−

1.7

−

2.2

(I = "10 A)

Gate Trigger Current (Continuous dc)

(V = 12 V, R = 100 W)

All Quadrants

Gate Trigger Voltage (Continuous dc)

−

0.15

−

1.0

−

2.2

−

(V = 12 Vdc, R = 100 W, T = 25°C)

Gate Non−Trigger Voltage

(V = 12 V, R = 100 W, T = 110°C)

Holding Current

1.8

2.5

(V = 12 V, I (Initiating Current) = "200 mA, Gate Open)

Gate Controlled Turn-On Time

−

(V = Rated V

, I = 10 A pk, I = 60 mA, tr = 0.1 msec)

DRM TM

DYNAMIC CHARACTERISTICS

Critical Rate-of-Rise of Off-State Voltage

(V = Rated V , Exponential Waveform, T = 100°C)

dv/dt

100

4.0

−

V/ms

DRM

Critical Rate-of-Rise of Commutation Voltage

(V = Rated V , I = 3.5 A pk, Commutating

dv/dt(c)

1.0

DRM TM

di/dt = 1.26 A/ms, Gate Unenergized, T = 90°C)

3. Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 2%.

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T2322B

Voltage Current Characteristic of Triacs

(Bidirectional Device)

+ Current

Quadrant 1

MainTerminal 2 +

Symbol

Parameter

Peak Repetitive Forward Off State Voltage

Peak Forward Blocking Current

DRM

on state

at V

RRM

Peak Repetitive Reverse Off State Voltage

Peak Reverse Blocking Current

RRM

Maximum On State Voltage

Holding Current

+ Voltage

off state

at V

DRM

Quadrant 3

MainTerminal 2 −

Quadrant Definitions for a Triac

MT2 POSITIVE

(Positive Half Cycle)

(+) MT2

Quadrant II

Quadrant I

(−) I

(+) I

GATE

MT1

REF

−

+ I

(−) MT2

Quadrant III

Quadrant IV

(+) I

(−) I

GATE

MT1

REF

MT1

REF

−

MT2 NEGATIVE

(Negative Half Cycle)

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

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T2322B

PACKAGE DIMENSIONS

TO−225

CASE 77−09

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077−01 THRU −08 OBSOLETE, NEW STANDARD

077−09.

−B−

−A−

INCHES

DIM MIN MAX

MILLIMETERS

2 3

MIN

10.80

7.50

2.42

0.51

2.93

MAX

11.04

7.74

2.66

0.66

3.30

0.425

0.295

0.095

0.020

0.115

0.435

0.305

0.105

0.026

0.130

0.094 BSC

2.39 BSC

0.050

0.015

0.575

0.095

0.025

0.655

1.27

0.39

14.61

2.41

0.63

16.63

TYP

0.148

0.045

0.025

0.145

0.040

0.158

0.065

0.035

0.155

−−−

3.76

1.15

0.64

3.69

1.02

4.01

1.65

0.88

3.93

−−−

0.25 (0.010)

D 2 PL

0.25 (0.010)

STYLE 5:

PIN 1. MT 1

2. MT 2

3. GATE

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

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Phone: 81−3−5773−3850

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

T2322/D

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T2322BG [ONSEMI]

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