TF252-5-TL-H [ONSEMI]
N 沟道 JFET，20V，140 至 350uA，1.4mS，USFP;
| 型号： | TF252-5-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 JFET，20V，140 至 350uA，1.4mS，USFP |
| 文件： | 总7页 (文件大小：329K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0841B
TF252
N-Channel JFET
http://onsemi.com
20V, 140 to 350 A, 1.4mS, USFP
μ
Features
•
High gain : G =1.0dB typ (V =2V, R =2.2k , Cin=5pF, V =10mV, f=1kHz)
Ω
V
CC
L
IN
•
•
•
•
•
•
•
Ultrasmall package facilitates miniaturization in end products [1.0mm 0.6mm 0.27mm (max 0.3mm)]
Best suited for use in Electret Condenser Microphone for audio equipments and telephones
Excellent voltage characteristics
Excellent transient characteristics
Adoption of FBET process
×
×
Halogen free compliance
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Gate-to-Drain Voltage
Gate Current
Symbol
Conditions
Ratings
Unit
V
V
--20
10
GDO
I
mA
mA
mW
G
Drain Current
I
1
D
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
30
D
Tj
150
C
C
°
°
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: USFP
7055-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 10,000 pcs./reel
TF252-4-TL-H
TF252-5-TL-H
0.6
Packing Type: TL
Marking
0.11
0.2
3
3
0 to 0.02
TL
D
1
2
0.15
0.175
1
2
Electrical Connection
1
1
2
1 : Drain
2 : Source
3 : Gate
3
3
USFP
2
Semiconductor Components Industries, LLC, 2013
August, 2013
O1012 TKIM/92612 TKIM/70407GB TIIM TC-00000793 No. A0841-1/7
TF252
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--20
max
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
V
I
=--100
A
V
V
μ
(BR)GDO
(off)
G
V
V
=2V, I =1
A
--0.1
140*
0.8
--0.4
--1.0
μ
GS
DS
D
Drain Current
I
V
=2V, V =0V
350*
A
μ
DSS
yfs
DS GS
Forward Transfer Admittance
Input Capacitance
V
=2V, V =0V, f=1kHz
GS
1.4
3.1
mS
pF
pF
|
|
DS
Ciss
Crss
V
=2V, V =0V, f=1MHz
GS
DS
Reverse Transfer Capacitance
0.95
[Ta=25°C, V =2V, R =2.2k , Cin=5pF, See specified Test Circuit.]
Ω
CC
L
Voltage Gain
G
V
=10mV, f=1kHz
1.0
dB
dB
dB
%
V
IN
Reduced Voltage Characteristic
Frequency Characteristic
G
VV
Gvf
V
=10mV, f=1kHz, V =2.0V 1.5V
--0.6
--2.0
--1.0
Δ
Δ
→
IN
f=1kHz to 110Hz
CC
Total Harmonic Distortion
Output Noise Voltage
THD
V
=30mV, f=1kHz
=0V, A curve
IN
0.65
IN
V
NO
V
--106
--102
dB
: The TF252 is classified by I
as follows : (unit : A)
*
μ
DSS
Rank
4
5
I
140 to 240
210 to 350
DSS
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
2.2kΩ
V
V
=2V
CC
CC
=1.5V
33μF
5pF
+
V
THD
VTVM
OSC
Ordering Information
Device
Package
USFP
Shipping
memo
TF252-4-TL-H
10,000pcs./reel
10,000pcs./reel
Pb Free and Halogen Free
TF252-5-TL-H
USFP
I
-- V
I
-- V
DS
D
DS
D
300
250
200
150
100
350
300
250
200
150
100
50
50
0
--0.30V
--0.4V
0
0
0
0.5
1.0
1.5
2.0
IT12440
1
2
3
4
5
Drain-to-Source Voltage, V
DS
-- V
Drain-to-Source Voltage, V
DS
-- V
IT12441
No. A0841-2/7
TF252
I
-- V
I
-- V
GS
D
GS
D
400
350
300
250
200
150
100
400
350
300
250
200
150
100
V
=2V
V
=2V
DS
DS
50
0
50
0
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
0
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
0
IT12443
Gate-to-Source Voltage, V
GS
-- V
IT12442
Gate-to-Source Voltage, V
-- V
GS
⏐yfs⏐ -- I
V
GS
(off) -- I
DSS
DSS
--0.60
--0.55
--0.50
--0.45
--0.40
--0.35
--0.30
1.7
1.6
1.5
1.4
1.3
1.2
V
=2V
=1μA
V
V
=2V
=0V
DS
DS
GS
I
D
f=1kHz
1.1
1.0
--0.25
--0.20
100
150
200
250
300
350
400
100
150
200
250
300
350
400
Zero-Gate Voltage Drain Current, I
DSS
-- μA IT12444
Zero-Gate Voltage Drain Current, I
DSS
-- μA IT12445
Ciss -- V
Crss -- V
DS
DS
10
3
2
V
=0V
V
GS
=0V
GS
f=1MHz
f=1MHz
7
5
1.0
3
2
7
5
1.0
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
1.0
10
1.0
10
IT12446
IT12447
Drain-to-Source Voltage, V
-- V
Drain-to-Source Voltage, V -- V
DS
DS
G
-- I
ΔG -- I
VV DSS
V
DSS
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
G
I
: V =2V
CC
IN
f=1kHz
ΔG
: V =2V 1.5V
=10mV
V
VV CC
V
=10mV
V
IN
f=1kHz
R =2.2kΩ
R =2.2kΩ
L
L
Cin=5pF
Cin=5pF
: V =2V
I
: V =2V
DSS DS
DSS DS
--0.9
--1.0
--0.2
--0.4
100
150
200
250
300
350
400
100
150
200
250
300
350
400
Zero-Gate Voltage Drain Current, I
DSS
-- μA IT12448
Zero-Gate Voltage Drain Current, I -- μA IT12449
DSS
No. A0841-3/7
TF252
THD -- V
THD -- I
DSS
IN
2
1.4
1.2
1.0
0.8
0.6
0.4
THD : V =2V
CC
THD : V =2V
CC
f=1kHz
V
=30mV
IN
10
R =2.2kΩ
f=1kHz
L
7
5
Cin=5pF
R =2.2kΩ
L
I
: V =2V
Cin=5pF
DSS DS
I
: V =2V
3
2
DSS DS
1.0
7
5
3
2
0.2
0
0.1
0
50
100
150
200
IT12450
100
150
200
250
300
350
400
Input Voltage, V
IN
-- mV
Zero-Gate Voltage Drain Current, I -- μA IT12451
DSS
P
-- Ta
D
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT12452
No. A0841-4/7
TF252
Taping Specification
TF252-4-TL-H, TF252-5-TL-H
No. A0841-5/7
TF252
Outline Drawing
Land Pattern Example
TF252-4-TL-H, TF252-5-TL-H
Mass (g) Unit
(0.0005) mm
Unit: mm
0.3
0.2
0.2
No. A0841-6/7
TF252
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PS No. A0841-7/7
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