TF256TH3TL [ONSEMI]
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, HALOGEN FREE, ULTRA SMALL, VTFP, SC-106A, 3 PIN;
| 型号： | TF256TH3TL |
| 厂家： | 
ONSEMI |
| 描述： | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, HALOGEN FREE, ULTRA SMALL, VTFP, SC-106A, 3 PIN |
| 文件： | 总5页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1617A
SANYO Sem iconductors
DATA S HEET
N-channel Silicon Juncton FET
Electret Condenser Microphone
Applications
TF256TH
Features
•
High gain : G =2.7dB typ (V =2V, R =2.2k , Cin=5pF, V =10mV, f=1kHz)
Ω
V
CC
L
IN
•
•
•
•
•
Ultrasmall package facilitates miniaturization in end products
Best suited for use in electret condenser microphone for audio equipments and telephones
Excellent transient characteristics
Adoption of FBET process
Halogen free compliance
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Gate-to-Drain Voltage
Gate Current
Symbol
Conditions
Ratings
Unit
V
V
--20
10
GDO
I
mA
mA
mW
G
Drain Current
I
1
D
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
100
150
D
Tj
C
C
°
Tstg
--55 to +150
°
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: VTFP
7031-001
• JEITA, JEDEC
: SC-106A
• Minimum Packing Quantity : 8,000 pcs./real
Top View
1.4
0.25
3
Packing Type: TL
Marking
3
N
2
1
0.1
TL
0.2
1
2
0.45
Electrical Connection
1
Bottom View
3
1 : Drain
2 : Source
3 : Gate
2
SANYO : VTFP
http://semicon.sanyo.com/en/network
10511 TKIM TC-00002535/N2509GB TKIM TC-00002097
No. A1617-1/5
TF256TH
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
Rank
min
--20
max
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
V
I
=--100
A
V
V
μ
(BR)GDO
G
V
(off)
V
=2V, I =1
A
μ
--0.1
100
140
240
0.75
--0.35
--1.0
GS
DS
D
3
4
5
180
280
450
Drain Current
I
*
V
=2V, V =0V
DS GS
A
μ
DSS
Forward Transfer Admittance
Input Capacitance
yfs
V
=2V, V =0V, f=1kHz
GS
1.7
3.1
1.0
mS
pF
pF
|
|
DS
Ciss
Crss
V
=2V, V =0V, f=1MHz
GS
DS
Reverse Transfer Capacitance
V
=2V, V =0V, f=1MHz
GS
DS
[Ta=25°C, V =2.0V, R =2.2k , Cin=5pF, See specified Test Circuit.]
Ω
CC
L
3
4
5
3
4
5
1.0
2.0
Voltage Gain
G
V
=10mV, f=1kHz
dB
V
IN
3.0
--0.5
--0.6
--0.9
--1.0
--1.3
--2.0
--1.0
Reduced Voltage Characteristic
Frequency Characteristic
G
V
IN
=10mV, f=1kHz, V =2.0V 1.5V
dB
dB
%
Δ
Δ
→
VV
CC
Gvf
f=1kHz to 110Hz
3
4
5
1.4
0.9
Total Harmonic Distortion
Output Noise Voltage
THD
V
=30mV, f=1kHz
=0V, A curve
IN
IN
0.35
--105
V
NO
V
--100
dB
: The TF256TH is classified by I
as follows : (unit : A)
μ
*
DSS
Marking
Rank
N3
3
N4
4
N5
5
I
100 to 180
140 to 280
240 to 450
DSS
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
2.2kΩ
V
=2.0V
CC
V
=1.5V
CC
33μF
5pF
+
V
THD
VTVM
OSC
I
D
-- V
DS
I
-- V
D GS
500
400
350
300
250
200
150
100
V
=2V
DS
450
400
350
300
250
200
150
100
50
0
50
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
--0.50 --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0.05
0
Drain-to-Source Voltage, V
DS
-- V
IT15213
Gate-to-Source Voltage, V -- V
GS
IT16271
No. A1617-2/5
TF256TH
I
D
-- V
GS
| yfs | -- I
DSS
2.5
2.0
1.5
1.0
450
400
350
300
250
200
150
100
V
=2V
V
V
=2V
=0V
DS
DS
GS
f=1kHz
0.5
0
50
0
--0.50 --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0.05
0
50
100
150
200
250
300
350
400
450
500
Gate-to-Source Voltage, V
-- V
IT15215
Drain Current, I -- μA
DSS
IT16272
GS
V
GS
(off) -- I
DSS
Ciss -- V
DS
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
10
V
I
=2V
=1μA
V
=0V
DS
D
GS
f=1MHz
7
5
3
2
0.05
0
1.0
3
5
7
2
3
5
7
2
50
100
150
200
250
300
350
400
450
500
1.0
10
Drain Current, I
DSS
-- μA
Drain-to-Source Voltage, V
DS
-- V
IT16273
IT15218
G
-- I
Crss -- V
V
DSS
DS
3
2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
G
: V =2V
CC
V
=0V
V
GS
f=1MHz
V
=10mV
IN
f=1kHz
R =2.2kΩ
Cin=5pF
L
I
: V =2V
DSS DS
1.0
7
5
0
3
--0.5
3
5
7
2
3
5
7
2
50
100
150
200
250
300
350
400
450
500
1.0
10
IT15219
Drain-to-Source Voltage, V
-- V
Drain Current, I -- μA
DSS
IT16274
DS
G
-- V
CC
G
-- Cin
V
V
7
10
G
: V =10mV
IN
G : V =2V
V CC
V
6
5
8
6
f=1kHz
V
=10mV
IN
R =2.2kΩ
f=1kHz
R =2.2kΩ
L
Cin=5pF
L
4
4
3
2
2
0
1
--2
--4
--6
0
--1
--2
--3
--8
--10
0
1
2
3
4
5
6
0
2
4
6
8
10
12
14
16
IT16276
IT16275
Electret Capacitance, Cin -- pF
Supply Voltage, V
CC
-- V
No. A1617-3/5
TF256TH
ΔG
-- I
DSS
THD -- V
IN
VV
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
100
7
5
ΔG
: V =2V→1.5V
THD : V =2V
CC
VV CC
V
=10mV
f=1kHz
IN
f=1kHz
3
2
R =2.2kΩ
L
R =2.2kΩ
Cin=5pF
L
Cin=5pF
10
7
5
I
: V =2V
DSS DS
3
2
1.0
7
5
3
2
--1.4
--1.6
0.1
0
50
100
150
200
IT16278
50
100
150
200
250
300
350
400
450
500
Drain Current, I
DSS
-- μA
IT16277
Input Voltage, V
-- mV
IN
THD -- I
DSS
P
-- Ta
D
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
120
100
80
THD : V =2V
CC
V
=30mV
IN
f=1kHz
R =2.2kΩ
L
Cin=5pF
I
: V =2V
DSS DS
60
40
20
0
0.2
0
50
100
150
200
250
300
350
400
450
500
0
20
40
60
80
100
120
140
160
Drain Current, I
-- μA
IT16279
Ambient Temperature, Ta -- °C
IT15227
DSS
No. A1617-4/5
TF256TH
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
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aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
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human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
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party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of January, 2011. Specifications and information herein are subject
to change without notice.
PS No. A1617-5/5
相关型号：
TF256TH4TL
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, HALOGEN FREE, ULTRA SMALL, VTFP, SC-106A, 3 PIN
ONSEMI
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