TF414T5G [ONSEMI]
N-Channel JFET, 40V, 50 to 130µA, 0.11mS, SOT-883;
| 型号： | TF414T5G |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel JFET, 40V, 50 to 130µA, 0.11mS, SOT-883 |
| 文件： | 总3页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA2259B
TF414
N-Channel JFET
http://onsemi.com
40V, 50 to 130A, 0.11mS, SOT-883
Features
Electrical Connection
Small I
: max 500pA (V = 20V, V =0V)
GS DS
GSS
Small Ciss : typ 0.7pF (V =10V, V =0V, f=1MHz)
DS GS
3
Ultrasmall package facilitates miniaturization in end products
Halogen free compliance
1 : Source
2 : Drain
3 : Gate
Applications
Top view
1
2
Impedance conversion, infrared sensor applications
Specifications
Marking
Absolute Maximum Ratings at Ta = 25C
Parameter
Drain to Source Voltage
Gate to Drain Voltage
Gate Current
Symbol
Value
Unit
V
V
40
40
10
DSS
GDS
3
1
V
I
V
A4 M
= Date Code
mA
G
M
I
Drain Current
1
mA
D
SO2T-883
P
Power Dissipation
Junction Temperature
Storage Temperature
100
150
mW
D
Tj
C
C
Tstg
55 to +150
This product is designed to “ESD immunity < 200V*”,
so please take care when handling. * Machine Model
Ordering & Package Information
Device
TF414T5G
Package
Shipping
8,000
Pb-free and
SOT-883
pcs. / reel
Halogen Free
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta 25C
Value
Parameter
Symbol
Conditions
Unit
min
40
typ
max
V
I
= 10μA, V =0V
Gate to Drain Breakdown Voltage
Gate to Source Leakage Current
Cutoff Voltage
V
pA
V
(BR)GDS
G
DS
I
V
V
V
V
= 20V, V =0V
500
GSS
GS
DS
V
I
(off)
= 10V, I = 1μA
1.4
4.0
GS
DS
DS
DS
D
= 10V, V
= 0V
Drain Current
50
130
A
mS
pF
pF
DSS
| yfs |
Ciss
GS
= 10V, V =0V, f = 1kHz
Forward Transfer Admittance
Input Capacitance
0.05
0.11
0.7
GS
V
= 10V, V
= 0V, f = 1MHz
GS
DS
Reverse Transfer Capacitance
Crss
0.3
Semiconductor Components Industries, LLC, 2014
January, 2014
12814HK TC-00003085/D1813HK/D1113HK GB No.A2259-1/3
TF414
I
D
-- V
I
-- V
DS
DS
D
120
100
80
120
100
80
60
60
40
40
--0.6V
20
0
20
0
0
1
2
3
4
5
0
5
10
15
20
25
30
IT16762
Drain-to-Source Voltage, V
DS
-- V
IT16761
Drain-to-Source Voltage, V
-- V
DS
I
D
-- V
V
(off) -- I
GS
GS
DSS
--2.2
120
100
80
V
=10V
DS
V
=10V
DS
I =1.0μA
D
--2.0
--1.8
--1.6
--1.4
60
40
--1.0
20
0
--0.8
--0.4
40
60
80
100
120
140
HD131113
--2.0
--1.5
--1.0
--0.5
0
Drain Current, I
DSS
-- μA
Gate-to-Source Voltage, V
GS
-- V
IT16764
|
y
fs | -- I
Ciss -- V
DS
DSS
0.14
1.0
V
=0V
GS
f=1MHz
V
V
=10V
=0V
DS
GS
0.13
0.12
0.11
7
f=1kHz
5
0.10
0.09
3
2
0.08
0.07
0.06
0.1
0.1
40
60
80
100
120
140
HD131113
2
3
5
7
2
3
5
7
2
3
5 7
1.0
10
100
IT16767
Drain Current, I
-- μA
Drain-to-Source Voltage, V -- V
DSS
DS
P
-- Ta
Crss -- V
D
DS
1.0
120
100
V
=0V
GS
f=1MHz
7
5
80
60
40
3
2
20
0
0.1
0.1
2
3
5
7
2
3
5
7
2
3
5 7
0
20
40
60
80
100
120
140
160
1.0
10
100
IT16768
Drain-to-Source Voltage, V
DS
-- V
HD131212
Ambient Temperature, Ta -- °C
No.A2259-2/3
TF414
Package Dimensions
unit : mm
SOT-883 (XDFN3), 1.0x0.6, 0.35P
CASE 506CB
ISSUE A
NOTES:
A B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
PIN ONE
REFERENCE
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
E
MILLIMETERS
0.10
0.10
C
C
DIM MIN
0.340 0.440
A1 0.000 0.030
MAX
A
TOP VIEW
b
D
D2
e
0.075 0.200
0.950 1.075
0.620 BSC
0.350 BSC
0.550 0.675
NOTE 3
A
C
0.10
0.10
C
E
E2 0.425 0.550
L
0.170 0.300
C
3X
GENERIC
MARKING DIAGRAM*
A1
SIDE VIEW
SEATING
PLANE
XX M
D2
XX = Specific Device Code
E2
M
= Date Code
e/2
1
e
*This information is generic. Please refer
to device data sheet for actual part
3X
L
2X
b
M
M
0.10
0.05
C A B
C
BOTTOM VIEW
RECOMMENDED
SOLDER FOOTPRINT*
1.10
0.41
2X
0.43
1
0.55
2X
PACKAGE
OUTLINE
0.20
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
MountingTechniques Reference Manual, SOLDERRM/D.
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PS No.A2259-3/3
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