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TIG065E8-TL-H [ONSEMI]

IGBT，N 沟道，400V，150A，VCE(sat)；4.2V，单 ECH8;
TIG065E8-TL-H
型号： TIG065E8-TL-H
厂家： ONSEMI    ONSEMI
描述：

IGBT，N 沟道，400V，150A，VCE(sat)；4.2V，单 ECH8

双极性晶体管
文件： 总8页 (文件大小：479K)
中文：  中文翻译
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Ordering number : ENA1862A  
TIG065E8  
N-Channel IGBT  
http://onsemi.com  
( );  
400V, 150A, V  
sat 4.2V, Single ECH8  
CE  
Features  
•
•
Low-saturation voltage  
Low voltage drive (2.5V)  
•
•
•
•
•
Enhansment type  
Built-in Gate-to-Emitter protection diode  
Mounting Height 0.9mm, Mounting Area 8.12mm2  
Halogen free compliance  
dv / dt guarantee  
*
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Collector-to-Emitter Voltage  
Gate-to-Emitter Voltage (DC)  
Gate-to-Emitter Voltage (Pulse)  
Collector Current (Pulse)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
V
I
400  
±4  
CES  
GES  
GES  
V
PW≤1ms  
±5  
V
V
GE  
CE  
=2.5V, C =100 F  
150  
400  
150  
A
μ
CP  
M
Maximum Collector-to-Emitter dv / dt  
Channel Temperature  
dv / dt  
Tch  
V
≤320V, starting Tch=25 C  
V / s  
μ
°
C
°
°
Storage Temperature  
Tstg  
-40 to +150  
C
: Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), will be 100% screen-detected in the circuit shown as Fig. 1.  
*
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: ECH8  
7011A-004  
• JEITA, JEDEC  
: -  
• Minimum Packing Quantity : 3000 pcs./reel  
Top View  
2.9  
TIG065E8-TL-H  
Packing Type: TL  
Marking  
0.15  
8
5
ZE  
0 to 0.02  
LOT No.  
TL  
4
1
0.65  
0.3  
Electrical Connection  
8
7
6
5
1 : Emitter  
2 : Emitter  
3 : Emitter  
4 : Gate  
5 : Collector  
6 : Collector  
7 : Collector  
8 : Collector  
ECH8  
1
2
3
4
Bottom View  
Semiconductor Components Industries, LLC, 2013  
September, 2013  
60612 TKIM/N2410PJ TKIM TC-00002514 No. A1862-1/8  
TIG065E8  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
V
min  
400  
max  
Collector-to-Emitter Breakdown Voltage  
Collector-to-Emitter Cutoff Current  
Gate-to-Emitter Leakage Current  
Gate-to-Emitter Threshold Voltage  
Collector-to-Emitter Saturation Voltage  
Input Capacitance  
V
I
I =2mA, V =0V  
C GE  
(BR)CES  
V
V
=320V, V =0V  
GE  
10  
A
A
μ
CES  
GES  
CE  
GE  
I
=±4V, V =0V  
CE  
±10  
0.9  
7
μ
V
V
(off)  
V
=10V, I =1mA  
0.4  
V
GE  
CE  
CE  
C
(sat)  
I
=100A, V =2.5V  
4.2  
3100  
30  
V
C
GE  
Cies  
pF  
pF  
pF  
Output Capacitance  
Coes  
Cres  
V
=10V, f=1MHz  
CE  
Reverse Transfer Capacitance  
23  
Fig.1 Large Current R Load Switching Circuit  
R
L
C
M
+
V
CC  
R
G
TIG065E8  
V
GE  
100kΩ  
Note1. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device of gate-series  
resistance R when it is turned off.  
G
Ordering Information  
Device  
Package  
ECH8  
Shipping  
memo  
TIG065E8-TL-H  
3,000pcs./reel  
Pb Free and Halogen Free  
I
-- V  
I
-- V  
GE  
C
CE  
C
150  
125  
100  
75  
150  
125  
100  
75  
Tc=25°C  
V
=10V  
CE  
50  
50  
25  
0
25  
0
0
1
2
3
4
5
6
7
8
9
10  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
Collector-to-Emitter Voltage, V  
CE  
-- V IT16024  
Gate-to-Emitter Voltage, V  
GE  
-- V  
IT16025  
No. A1862-2/8  
TIG065E8  
V
-- V  
V
-- V  
CE  
GE  
CE  
GE  
10  
9
10  
9
Tc= --25°C  
Tc=25°C  
8
8
7
7
6
6
5
5
4
4
3
3
2
2
1
0
1
0
0
0.5  
1.0  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
Gate-to-Emitter Voltage, V  
-- V  
Gate-to-Emitter Voltage, V  
-- V  
IT16026  
IT16027  
GE  
GE  
V
-- V  
V
(sat) -- Tc  
CE  
GE  
CE  
10  
9
10  
9
Tc=75°C  
8
8
7
7
6
6
5
5
4
4
3
3
2
2
1
0
1
0
100  
0
0.5  
1.0  
--50  
--25  
0
25  
50  
75  
125  
150  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
Gate-to-Emitter Voltage, V  
-- V  
Case Temperature, Tc -- °C  
IT16028  
IT16029  
GE  
V
(off) -- Tc  
Cies, Coes, Cres -- V  
GE  
CE  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
10000  
V
=10V  
f=1MHz  
7
5
CE  
I =1mA  
C
Cies  
3
2
1000  
7
5
3
2
100  
7
5
3
2
0.1  
0
10  
--50  
--25  
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
IT16031  
-- V  
Case Temperature, Tc -- °C  
IT16030  
Collector-to-Emitter Voltage, V  
CE  
SW Time -- I  
CP  
SW Time -- R  
G
10000  
10000  
Switching test circuit Fig.1  
Switching test circuit Fig.1  
7
5
7
V
V
R
=2.5V  
=320V  
=140Ω  
V
V
I
=2.5V  
=320V  
=150A  
GE  
CC  
G
GE  
CC  
CP  
5
3
2
3
2
C
=100μF  
C
=100μF  
M
M
PW=50μs  
PW=50μs  
1000  
1000  
7
5
7
5
f)  
t (of  
d
3
2
3
2
100  
10  
100  
2
3
5
7
2
3
5
7
0
20  
40  
60  
80  
100 120 140 160 180 200  
100  
1000  
IT16032  
Collector Current (Pulse), I  
CP  
-- A  
Gate Series Resistance, R -- Ω  
IT16033  
G
No. A1862-3/8  
TIG065E8  
dv / dt -- R  
I
-- V  
GE  
G
CP  
600  
500  
400  
300  
200  
180  
160  
140  
120  
100  
80  
V
C
=320V  
Switching test circuit Fig.1  
CE  
=100μF  
V
V
=2.5V  
=320V  
=150A  
M
GE  
CC  
Tc=25°C  
I
CP  
Tc=70°C  
60  
40  
100  
0
20  
0
0
50  
100  
150  
200  
250  
300  
350  
IT16103  
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5  
Gate Series Resistance, R -- Ω  
Gate-to-Emitter Voltage, V  
GE  
-- V  
IT16104  
G
C
-- I  
C
-- I  
CP  
M
CP  
M
300  
250  
200  
150  
100  
500  
450  
400  
350  
300  
250  
200  
150  
100  
V
V
=320V  
=2.5V  
V
V
=320V  
=3V  
CE  
GE  
CE  
GE  
Tc=70°C  
Tc=70°C  
Tc=25°C  
Tc=25°C  
50  
0
50  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
IT16036  
IT16037  
Collector Current (Pulse), I  
CP  
-- A  
Collector Current (Pulse), I -- A  
CP  
dv / dt -- Turn OFF I  
C
500  
400  
300  
200  
Tc=25°C  
≤320V  
V
CE  
100  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Turn OFF Collector Current, Turn OFF I -- A  
IT16038  
C
No. A1862-4/8  
TIG065E8  
Definition of dv/dt  
dv/dt is defined as the maximum slope of the below V  
curve during turn-off period.  
CE  
dv/dt= V / t= V /100ns  
Δ Δ  
Δ
CE  
CE  
Overall waveform  
Enlarged picture of turn-off period  
Turn-off period  
V,I  
V
CE  
Turn off V  
CE  
t=100ns  
Δ
I
C
I
CP  
V
Δ
CE  
Turn off I  
C
V
CE  
I
C
t
IT15323  
Definition of Switching Time  
V
GE  
V
:90%  
GE  
V
:10%  
GE  
t
V
CE  
V
:90%  
CE  
V
:10%  
V
:10%  
CE  
CE  
t
t (on)  
t
t (off)  
d
d
r
I
C
I
:90%  
C
I
:10%  
C
t
t
f
IT15324  
No. A1862-5/8  
TIG065E8  
Embossed Taping Specification  
TIG065E8-TL-H  
No. A1862-6/8  
TIG065E8  
Outline Drawing  
Land Pattern Example  
TIG065E8-TL-H  
Mass (g) Unit  
Unit: mm  
0.02  
mm  
* For reference  
0.4  
0.65  
No. A1862-7/8  
TIG065E8  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no  
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical  
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PS No. A1862-8/8  

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