TIL113SM_技术文档

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December 2014

4N29M, 4N30M, 4N32M, 4N33M, H11B1M,TIL113M

6-Pin DIP General Purpose Photodarlington Optocoupler

Features

Description

■ High Sensitivity to Low Input Drive Current

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and

TIL113M have a gallium arsenide infrared emitter opti-

cally coupled to a silicon planar photodarlington.

■ Meets or Exceeds All JEDEC Registered

Speciﬁcations

■ Safety and Regulatory Approvals:

– UL1577, 4,170 VAC

for 1 Minute

RMS

■ DIN-EN/IEC60747-5-5, 850 V Peak Working

Insulation Voltage

Applications

■ Low Power Logic Circuits

■ Telecommunications Equipment

■ Portable Electronics

■ Solid State Relays

■ Interfacing Coupling Systems of Different Potentials

and Impedances

Schematic

ANODE 1

6 BASE

6

1

CATHODE

N/C

COLLECTOR

2

3

5

4

1

6

EMITTER

1

Figure 2. Package Outlines

Figure 1. Schematic

4NXXM, H11B1M, TIL113M Rev. 1.0.4

www.fairchildsemi.com

Safety and Insulation Ratings

As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit

data. Compliance with the safety ratings shall be ensured by means of protective circuits.

Parameter

Characteristics

< 150 V

< 300 V

I–IV

Installation Classiﬁcations per DIN VDE

0110/1.89 Table 1, For Rated Mains Voltage

RMS

Climatic Classiﬁcation

55/100/21

2

Pollution Degree (DIN VDE 0110/1.89)

Comparative Tracking Index

175

Symbol

Parameter

Value

Unit

Input-to-Output Test Voltage, Method A, V

x 1.6 = V

,

IORM

PR

1360

V

peak

Type and Sample Test with t = 10 s, Partial Discharge < 5 pC

m

V

PR

Input-to-Output Test Voltage, Method B, V

x 1.875 = V

,

IORM

PR

1594

100% Production Test with t = 1 s, Partial Discharge < 5 pC

m

V

Maximum Working Insulation Voltage

Highest Allowable Over-Voltage

850

6000

≥ 7

V

IORM

peak

V

IOTM

peak

External Creepage

mm

°C

External Clearance

≥ 7

External Clearance (for Option TV, 0.4" Lead Spacing)

Distance Through Insulation (Insulation Thickness)

≥ 10

≥ 0.5

175

350

800

DTI

(1)

T

Case Temperature

S

(1)

I

Input Current

mA

mW

Ω

S,INPUT

(1)

P

Output Power

S,OUTPUT

(1)

9

R

Insulation Resistance at T , V = 500 V

> 10

IO

S

IO

Note:

1. Safety limit values – maximum values allowed in the event of a failure.

4NXXM, H11B1M, TIL113M Rev. 1.0.4

www.fairchildsemi.com

2

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol

Parameter

Value

Unit

TOTAL DEVICE

T

Storage Temperature

-40 to +125

-40 to +100

-40 to +125

260 for 10 seconds

270

°C

STG

T

Operating Temperature

Junction Temperature

Lead Solder Temperature

OPR

T

°C

J

T

°C

SOL

Total Device Power Dissipation @ T = 25°C

mW

mW/°C

A

P

D

Derate Above 25°C

3.3

EMITTER

I

Continuous Forward Current

Reverse Voltage

80

3

mA

V

F

V

R

I (pk)

Forward Current – Peak (300 µs, 2% Duty Cycle)

3.0

120

2.0

A

F

LED Power Dissipation @ T = 25°C

mW

mW/°C

A

P

D

Derate above 25°C

DETECTOR

BV

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Collector Breakdown Voltage

30

V

CEO

CBO

ECO

5

V

Detector Power Dissipation @ T = 25°C

150

2.0

150

mW

mW/°C

mA

A

P

D

Derate Above 25°C

I

Continuous Collector Current

C

4NXXM, H11B1M, TIL113M Rev. 1.0.4

www.fairchildsemi.com

3

Electrical Characteristics

T = 25°C Unless otherwise speciﬁed.

A

Individual Component Characteristics

Symbol

EMITTER

Parameter

Test Conditions

Device

Min. Typ. Max. Unit

4NXXM

1.2

1.5

100

10

V

(2)

V

Input Forward Voltage

I = 10 mA

F

H11B1M,

TIL113M

F

0.8

V

V = 3.0 V

4NXXM

0.001

150

µA

pF

R

(2)

I

Reverse Leakage Current

H11B1M,

TIL113M

R

V = 6.0 V

R

(2)

C

Capacitance

V = 0V, f = 1.0 MHz

All

F

DETECTOR

4NXXM,

TIL113M

30

25

30

5.0

7

60

V

Collector-Emitter Breakdown

Voltage

BV

I

I = 1.0 mA, I = 0

(2)

CEO

CBO

ECO

C

B

H11B1M

Collector-Base Breakdown

I = 100 µA, I = 0

All

100

10

(2)

C

E

Voltage

4NXXM

Emitter-Collector Breakdown

I = 100 µA, I = 0

(2)

H11B1M,

TIL113M

E

B

Voltage

10

Collector-Emitter Dark

V

= 10 V, Base Open

CE

All

1

100

nA

(2)

CEO

Current

Notes:

2. Indicates JEDEC registered data.

4NXXM, H11B1M, TIL113M Rev. 1.0.4

www.fairchildsemi.com

4

Electrical Characteristics ^(Continued)

T = 25°C Unless otherwise speciﬁed.

A

Transfer Characteristics

Symbol

Parameter

Test Conditions

Device

Min.

Typ. Max.

Unit

DC CHARACTERISTICS

4N32M,

4N33M

50 (500)

10 (100)

mA (%)

I = 10 mA, V = 10 V,

F

CE

I = 0

4N29M,

4N30M

B

Collector Output

Current

I

(3)(4)(5)

C(CTR)

I = 1 mA, V = 5 V

H11B1M

TIL113M

4NXXM

5 (500)

mA (%)

F

CE

I = 10 mA, V = 1 V

30 (300)

mA (%)

F

CE

1.0

1.25

1.0

V

I = 8 mA, I = 2.0 mA

F

C

(3)(5)

V

Saturation Voltage

TIL113M

H11B1M

CE(SAT)

I = 1 mA, I = 1 mA

F

C

AC CHARACTERISTICS

I = 200 mA, I = 50 mA,

4NXXM,

TIL113M

F

C

5.0

µs

V

= 10 V, R = 100 Ω

CC

L

t

Turn-on Time

Turn-off Time

on

off

I = 10 mA, V = 10 V,

F

CE

H11B1M

25

R = 100 Ω

L

4N32M,

4N33M,

TIL113M

100

40

µs

I = 200 mA, I = 50 mA,

F

C

V

= 10 V, R = 100 Ω

CC

L

t

4N29M,

4N30M

I = 10 mA, V = 10 V,

F

CE

H11B1M

18

30

µs

R = 100 Ω

L

(6)(7)

BW

Notes:

kHz

Bandwidth

3. Indicates JEDEC registered data.

4. The current transfer ratio(I / I ) is the ratio of the detector collector current to the LED input current.

C

F

5. Pulse test: pulse width = 300 µs, duty cycle ≤ 2.0% .

6. I adjusted to I = 2.0 mA and I = 0.7 mA rms.

F

C

7. The frequency at which I is 3 dB down from the 1 kHz value.

C

Isolation Characteristics

Symbol

Characteristic

Test Conditions

Min.

Typ.

Max.

Unit

V

C

R

Input-Output Isolation Voltage t = 1 Minute

4170

VAC

RMS

ISO

Isolation Capacitance

Isolation Resistance

V

= 0 V, f = 1 MHz

0.2

pF

I-O

11

= 500 VDC, T = 25°C

10

Ω

A

4NXXM, H11B1M, TIL113M Rev. 1.0.4

www.fairchildsemi.com

5

Typical Performance Curves

1.8

1.7

1.6

1.5

1.4

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

V

T

= 5.0 V

= 25°C

Normalized to

= 10 mA

CE

A

I

F

T

= -55°C

= 25°C

= 100°C

A

1.3

1.2

1.1

1.0

A

0

2

4

6

8

10

12

14

16

18

20

1

10

100

I

F

- LED FORWARD CURRENT (mA)

I - FORWARD CURRENT (mA)

F

Figure 4. Normalized CTR vs. Forward Current

Figure 3. LED Forward Voltage vs. Forward Current

1.4

1.2

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

I

F

= 20 mA

I

= 5 mA

F

I

F

= 10 mA

I

F

= 5 mA

1.0

0.8

0.6

0.4

0.2

I

= 10 mA

F

I

= 20 mA

F

V

= 5.0 V

CE

Normalized to

= 10 mA

I

F

T

A

= 25°C

-60

-40

-20

0

20

40

60

80

100

10

100

1000

T

A

- AMBIENT TEMPERATURE (°C)

R

- BASE RESISTANCE (kΩ)

BE

Figure 5. Normalized CTR vs. Ambient Temperature

Figure 6. CTR vs. RBE (Unsaturated)

100

10

1

1.0

0.9

T

A

= 25˚C

V

CE

= 0.3 V

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

I

= 20 mA

= 10 mA

F

I

F

= 2.5 mA

I

F

0.1

0.01

I

F

= 5 mA

I

F

= 20 mA

I

F

= 5 mA

I

F

= 10 mA

0.001

0.01

0.1

1

10

100

1000

I

C

- COLLECTOR CURRENT (mA)

R - BASE RESISTANCE (k Ω)

BE

Figure 7. CTR vs. RBE (Saturated)

Figure 8. Collector-Emitter Saturation Voltage

vs. Collector Current

4NXXM, H11B1M, TIL113M Rev. 1.0.4

www.fairchildsemi.com

6

Typical Performance Curves (Continued)

1000

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

I

V

T

= 10 mA

F

V

10 V

CC =

= 10 V

CC

= 25°C

I

R

= 2 mA

= 100 Ω

C

L

A

100

10

1

T

off

T

f

T

on

T

r

0.1

1

10

100

10

100

R

1000

10000

100000

R-LOAD RESISTOR (kΩ)

- BASE RESISTANCE (kΩ)

BE

Figure 9. Switching Speed vs. Load Resistor

Figure 10. Normalized t vs. R

on BE

10000

1000

100

10

1.4

V

= 10 V

C

CE

= 25°

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

T

A

1

V

10 V

= 2 mA

= 100 Ω

CC =

I

C

L

0.1

R

0.01

0.001

0

20

40

60

80

100

10

100

1000

10000

100000

R - BASE RESISTANCE (kΩ)

BE

T

A

- AMBIENT TEMPERATURE (°C)

Figure 11. Normalized t vs. R

Figure 12. Dark Current vs. Ambient Temperature

off

BE

Switching Time Test Circuit and Waveform

V_CC= 10 V

INPUT PULSE

I_C

I_F

R_L

10%

INPUT

OUTPUT

OUTPUT PULSE

90%

R_BE

t_r

t_f

t_off

t_on

I_{F to produce}I_{C = 2 mA}

Adjust

Figure 13. Switching Time Test Circuit and Waveform

4NXXM, H11B1M, TIL113M Rev. 1.0.4

www.fairchildsemi.com

7

Reflow Profile

300

260°C

280

260

240

220

200

180

160

140

120

100

80

> 245°C = 42 s

Time above

183°C = 90 s

°C

1.822°C/s Ramp-up rate

60

40

33 s

20

0

60

120

180

270

360

Time (s)

Figure 14. Reﬂow Proﬁle

4NXXM, H11B1M, TIL113M Rev. 1.0.4

www.fairchildsemi.com

8

Ordering Information

Part Number

Package

Packing Method

4N29M

DIP 6-Pin

Tube (50 Units)

4N29SM

SMT 6-Pin (Lead Bend)

Tube (50 Units)

4N29SR2M

4N29VM

Tape and Reel (1000 Units)

Tube (50 Units)

DIP 6-Pin, DIN EN/IEC60747-5-5 Option

4N29SVM

4N29SR2VM

4N29TVM

SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option

DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option

Tube (50 Units)

Tape and Reel (1000 Units)

Tube (50 Units)

Note:

8. The product orderable part number system listed in this table also applies to the 4N30M, 4N32M, 4N33M, H11B1M,

and TIL113M devices.

Marking Information

1

2

4N29

6

V X YY Q

5

3

4

Figure 15. Top Mark

Table 1. Top Mark Deﬁnitions

1

2

3

4

5

6

Fairchild Logo

Device Number

DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)

One-Digit Year Code, e.g., “4”

Digit Work Week, Ranging from “01” to “53”

Assembly Package Code

4NXXM, H11B1M, TIL113M Rev. 1.0.4

www.fairchildsemi.com

9

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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1


型号：	TIL113SM
厂家：	ONSEMI
描述：	6 引脚 DIP 光电达林顿输出光耦合器光电
文件：	总14页 (文件大小：399K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TIL113SM [ONSEMI]

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