TIP125 [ONSEMI]
Plastic Medium-Power Complementary Silicon Transistors; 塑料中功率互补硅晶体管
| 型号： | TIP125 |
| 厂家： | 
ONSEMI |
| 描述： | Plastic Medium-Power Complementary Silicon Transistors |
| 文件： | 总7页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIP120, TIP121, TIP122
(NPN); TIP125, TIP126,
TIP127 (PNP)
Preferred Devices
Plastic Medium−Power
Complementary Silicon
Transistors
http://onsemi.com
Designed for general−purpose amplifier and low−speed switching
applications.
DARLINGTON
5 AMPERE
Features
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100 VOLTS, 65 WATTS
• High DC Current Gain −
h
= 2500 (Typ) @ I
= 4.0 Adc
FE
C
• Collector−Emitter Sustaining Voltage − @ 100 mAdc
V
= 60 Vdc (Min) − TIP120, TIP125
= 80 Vdc (Min) − TIP121, TIP126
= 100 Vdc (Min) − TIP122, TIP127
MARKING
DIAGRAM
CEO(sus)
4
• Low Collector−Emitter Saturation Voltage −
V
CE(sat)
= 2.0 Vdc (Max) @ I = 3.0 Adc
C
= 4.0 Vdc (Max) @ I = 5.0 Adc
C
TO−220AB
TIP12xG
AYWW
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Pb−Free Packages are Available*
CASE 221A
STYLE 1
1
2
3
TIP12x = Device Code
x
A
Y
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
September, 2005 − Rev. 6
TIP120/D
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
MAXIMUM RATINGS
TIP120,
TIP125
TIP121,
TIP126
TIP122,
TIP127
Rating
Symbol
Unit
Vdc
Vdc
Vdc
Adc
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
60
60
80
80
5.0
100
100
CEO
V
CB
EB
V
Collector Current − Continuous
− Peak
I
5.0
8.0
C
Base Current
I
120
mAdc
B
Total Power Dissipation @ T = 25_C
P
P
65
0.52
W
C
D
D
Derate above 25_C
W/_C
W
W/_C
mJ
Total Power Dissipation @ T = 25_C
2.0
0.016
A
Derate above 25_C
Unclamped Inductive Load Energy (Note 1)
E
50
Operating and Storage Junction, Temperature Range
T , T
–ꢀ65 to +ꢀ150
_C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
1.92
62.5
Unit
_C/W
_C/W
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
q
JC
R
q
JA
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. I = 1 A, L = 100 mH, P.R.F. = 10 Hz, V = 20 V, R = 100 W
C
CC
BE
ORDERING INFORMATION
Device
Package
Shipping
TIP120
TO−220
50 Units / Rail
50 Units / Rail
TIP120G
TO−220
(Pb−Free)
TIP121
TO−220
50 Units / Rail
50 Units / Rail
TIP121G
TO−220
(Pb−Free)
TIP122
TO−220
50 Units / Rail
50 Units / Rail
TIP122G
TO−220
(Pb−Free)
TIP125
TO−220
50 Units / Rail
50 Units / Rail
TIP125G
TO−220
(Pb−Free)
TIP126
TO−220
50 Units / Rail
50 Units / Rail
TIP126G
TO−220
(Pb−Free)
TIP127
TO−220
50 Units / Rail
50 Units / Rail
TIP127G
TO−220
(Pb−Free)
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2
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(I = 100 mAdc, I = 0)
V
Vdc
CEO(sus)
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
C
B
60
80
100
−
−
−
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
I
I
mAdc
mAdc
mAdc
CEO
CBO
EBO
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
CE
B
−
−
−
0.5
0.5
0.5
(V = 40 Vdc, I = 0)
CE
B
(V = 50 Vdc, I = 0)
CE
B
Collector Cutoff Current
(V = 60 Vdc, I = 0)
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
CB
E
−
−
−
0.2
0.2
0.2
(V = 80 Vdc, I = 0)
CB
E
(V = 100 Vdc, I = 0)
CB
E
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
−
2.0
BE
C
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
−
(I = 0.5 Adc, V = 3.0 Vdc)
C
CE
1000
1000
−
−
(I = 3.0 Adc, V = 3.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 3.0 Adc, I = 12 mAdc)
V
Vdc
Vdc
CE(sat)
C
B
−
−
2.0
4.0
(I = 5.0 Adc, I = 20 mAdc)
C
B
Base−Emitter On Voltage
(I = 3.0 Adc, V = 3.0 Vdc)
V
−
2.5
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
h
fe
4.0
−
−
(I = 3.0 Adc, V = 4.0 Vdc, f = 1.0 MHz)
C
CE
Output Capacitance
(V = 10 Vdc, I = 0, f = 0.1 MHz
C
ob
pF
TIP125, TIP126, TIP127
TIP120, TIP121, TIP122
CB
E
−
−
300
200
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
T
A
T
C
4.0 80
3.0 60
2.0 40
1.0 20
T
C
T
A
0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
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3
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
5.0
V
CC
−ꢀ30 V
PNP
NPN
t
s
R
D MUST BE FAST RECOVERY TYPE, eg:
& R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
3.0
2.0
B
1
ꢁ1N5825 USED ABOVE I ≈ 100 mA
B
R
C
SCOPE
ꢁMSD6100 USED BELOW I ≈ 100 mA
B
t
f
TUT
1.0
V
2
R
B
0.7
0.5
approx
8.0 V
D
1
≈ 8.0 k
51
≈ 120
0.3
0.2
0
t
r
V
1
V
= 30 V
I /I = 250
CC
+ꢀ4.0 V
approx
−12 V
C B
25 ms
I
= I
for t and t , D is disconnected
0.1
0.07
0.05
B1 B2
d
r
1
and V = 0
For NPN test circuit reverse all polarities.
T = 25°C
J
2
t , t ≤ 10 ns
f
DUTY CYCLE = 1.0%
r
t @ V
d
= 0
BE(off)
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
(pk)
Z
= r(t) R
q
JC
q
JC(t)
0.1
R
= 1.92°C/W MAX
q
JC
0.07 0.05
0.05
0.02
0.03
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
1
t
2
T
− T = P
C
Z
q
(pk) JC(t)
J(pk)
DUTY CYCLE, D = t /t
1 2
0.02
0.01
SINGLE PULSE
0.05 0.1
0.01
0.01
0.02
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500 1.0 k
t, TIME (ms)
Figure 4. Thermal Response
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4
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
20
10
There are two limitations on the power handling ability of
100 ms
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I − V
500 ms
dc
C
CE
5.0
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
2.0
1.0
0.5
T = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
J
1ꢂms
The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse
= 150_C; T is
J(pk)
C
@ T = 25°C (SINGLE PULSE)
C
5ꢂms
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
0.2
0.1
limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C.
T
may be calculated from the data in
CEO
J(pk)
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown
0.05
0.02
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Active−Region Safe Operating Area
10,000
5000
300
T = 25°C
J
3000
2000
200
1000
500
C
ob
T
= 25°C
= 4.0 Vdc
CE
C
100
70
300
200
V
I
C
= 3.0 Adc
C
ib
100
50
50
PNP
NPN
30
20
PNP
NPN
10
30
1.0
2.0
5.0 10
20
50 100 200
500 1000
0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
100
f, FREQUENCY (kHz)
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Small−Signal Current Gain
Figure 7. Capacitance
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5
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
NPN
PNP
TIP120, TIP121, TIP122
TIP125, TIP126, TIP127
20,000
10,000
20,000
V
= 4.0 V
V
= 4.0 V
CE
CE
10,000
7000
5000
5000
T = 150°C
J
T = 150°C
J
3000
2000
3000
2000
25°C
25°C
1000
500
−ꢀ55°C
1000
700
500
−ꢀ55°C
300
200
300
200
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 8. DC Current Gain
3.0
2.6
2.2
1.8
1.4
1.0
3.0
T = 25°C
J
T = 25°C
J
I
= 2.0 A
4.0 A
6.0 A
I = 2.0 A
C
C
2.6
2.2
1.8
1.4
1.0
4.0 A
6.0 A
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
I , BASE CURRENT (mA)
B
I , BASE CURRENT (mA)
B
Figure 9. Collector Saturation Region
3.0
2.5
2.0
1.5
1.0
0.5
3.0
T = 25°C
T = 25°C
J
J
2.5
2.0
V
@ I /I = 250
C B
BE(sat)
1.5
1.0
0.5
V
@ V = 4.0 V
CE
BE
V
@ V = 4.0 V
CE
BE
V
@ I /I = 250
C B
BE(sat)
V
@ I /I = 250
C B
CE(sat)
V
@ I /I = 250
C B
CE(sat)
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 10. “On” Voltages
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6
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
C
B
F
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
T
S
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
1
2
3
U
H
G
H
J
K
L
L
R
N
Q
R
S
T
V
J
G
D
U
V
Z
N
−−− 0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
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TIP120/D
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