TIP147TU [ONSEMI]
10 A, 100 V PNP Darlington Bipolar Power Transistor;
| 型号： | TIP147TU |
| 厂家： | 
ONSEMI |
| 描述： | 10 A, 100 V PNP Darlington Bipolar Power Transistor 局域网 晶体管 |
| 文件： | 总6页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
October 2009
TIP145 / TIP146 / TIP147
PNP Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.)
• Industrial Use
• Complement to TIP140/141/142
Equivalent Circuit
C
B
TO-3P
1.Base 2.Collector 3.Emitter
1
R1
R2
E
R1 ≅ 8kΩ
R2 ≅ 0.12kΩ
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage : TIP145
- 60
- 80
- 100
V
V
V
: TIP146
: TIP147
Collector-Emitter Voltage : TIP145
- 60
- 80
- 100
V
V
V
VCEO
: TIP146
: TIP147
VEBO
IC
ICP
IB
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
- 5
- 10
- 15
- 0.5
125
150
V
A
A
A
PC
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
W
°C
°C
TJ
TSTG
- 65 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
© 2009 Fairchild Semiconductor Corporation
TIP145 / TIP146 / TIP147 Rev. B1
www.fairchildsemi.com
1
Electrical Characteristics* TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP145
: TIP146
: TIP147
IC = - 30mA, IB = 0
- 60
- 80
- 100
V
V
V
ICEO
Collector Cut-off Current
: TIP145
V
V
CE = - 30V, IB = 0
CE = - 40V, IB = 0
- 2
- 2
- 2
mA
mA
mA
: TIP146
: TIP147
VCE = - 50V, IB = 0
ICBO
Collector Cut-off Current
: TIP145
: TIP146
: TIP147
VCB = - 60V, IE = 0
- 1
- 1
- 1
mA
mA
mA
VCB = - 80V, IE = 0
CB = - 100V, IE = 0
V
IEBO
hFE
Emitter Cut-off Current
VBE = - 5V, IC = 0
- 2
mA
DC Current Gain
VCE = - 4V,IC = - 5A
VCE = - 4V, IC = - 10A
1000
500
VCE(sat)
Collector-Emitter Saturation Voltage
IC = - 5A, IB = - 10mA
IC = - 10A, IB = - 40mA
- 2
- 3
V
V
VBE(sat)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Delay Time
IC = - 10A, IB = - 40mA
VCE = - 4V, IC = - 10A
- 3.5
- 3
V
VBE(on)
V
tD
0.15
0.55
2.5
μs
μs
μs
μs
VCC = - 30V, IC = - 5A
IB1= -20mA, IB2 = 20mA
RL = 6Ω
tR
Rise Time
tSTG
tF
Storage Time
Fall Time
2.5
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
© 2009 Fairchild Semiconductor Corporation
TIP145 / TIP146 / TIP147 Rev. B1
www.fairchildsemi.com
2
Typical Performance Characteristics
-10
-9
100000
10000
1000
VCE = -4V
-8
IB = -1800μA
-7
-6
-5
-4
-3
-2
-1
-0
IB = -1600μA
IB = -1400μA
IB = -1200μA
IB = -2000μA
IB = -1000μA
IB = -800μA
IB = -600μA
IB = -400μA
100
-0.1
-0
-1
-2
-3
-4
-5
-1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
-1000
-100
-10
IC=-500IB
f=0.1MHz
VBE(sat)
VCE(sat)
-1
-0.1
-0.01
-0.1
-1
-10
-100
-1
-10
-100
-1000
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
150
125
100
75
-100
-10
-1
50
TIP145
TIP146
TIP147
25
-0.1
0
-1
-10
-100
-1000
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
Figure 6. Power Derating
© 2009 Fairchild Semiconductor Corporation
TIP145 / TIP146 / TIP147 Rev. B1
www.fairchildsemi.com
3
5.00
4.60
13.80
13.40
1.65
1.45
3.30
3.10
16.20
15.40
5.20
4.80
R0.50
3°
16.96
16.56
20.10
19.70
18.90
18.50
7.20
6.80
3°
4°
1
3
2.00
1.60
3.70
3.30
1.85
2.60
2.20
20.30
19.70
2.20
1.80
3.20
2.80
1.20
0.80
M
0.55
0.75
0.55
5.45
5.45
NOTES: UNLESS OTHERW ISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAW ING FILE NAME: TO3PN03AREV2.
F) FAIRCHILD SEMICONDUCTOR.
R0.50
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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