TIP29A [ONSEMI]
Complementary Silicon Plastic Power Transistors; 互补硅塑料功率晶体管
| 型号： | TIP29A |
| 厂家： | 
ONSEMI |
| 描述： | Complementary Silicon Plastic Power Transistors |
| 文件： | 总5页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIP29, A, B, C (NPN),
TIP30, A, B, C (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications. Compact TO−220 AB package.
http://onsemi.com
Features
1 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
40, 60, 80, 100 VOLTS,
80 WATTS
• Pb−Free Packages are Available*
MAXIMUM RATINGS
29
30
29A
30A
29B
30B
29C
30C
Rating
Symbol
Unit
Collector − Emitter
V
CEO
40
60
80
100
Vdc
Voltage
MARKING
DIAGRAM
Collector − Base Voltage
Emitter − Base Voltage
V
40
60
80
100
Vdc
Vdc
Adc
CB
V
5.0
EB
Collector Current
− Continuous
− Peak
I
C
4
1.0
3.0
TO−220AB
CASE 221A
STYLE 1
TIPxxxG
AYWW
Base Current
I
0.4
Adc
B
Total Power Dissipation
P
D
STYLE 1:
PIN 1. BASE
30
0.24
W
W/°C
@ T = 25°C
C
1
Derate above 25°C
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2
3
Total Power Dissipation
P
D
@ T = 25°C
Derate above 25°C
2.0
0.016
W
W/°C
A
Unclamped Inductive
Load Energy (Note 1)
E
32
mJ
TIPxxx = Device Code:
29, 29A, 29B, 29C
30, 30A, 30B, 30C
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Operating and Storage
Junction Temperature
Range
T , T
–65 to +150
°C
J
stg
A
Y
WW
G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
62.5 °C/W
4.167 °C/W
q
JA
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
R
q
JC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. This rating based on testing with L = 20 mH, R = 100 W, V = 10 V, I =
C
BE
CC
C
1.8 A, P.R.F = 10 Hz
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
October, 2011 − Rev. 11
TIP29B/D
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
COLLECTOR
COLLECTOR
BASE
BASE
≈ 8.0 k ≈ 120
≈ 8.0 k ≈ 120
EMITTER
EMITTER
Figure 1. Darlington Circuit Schematic
ORDERING INFORMATION
Device
Package
Shipping
TIP29
TO−220
50 Units / Rail
50 Units / Rail
TIP29G
TO−220
(Pb−Free)
TIP29A
TO−220
50 Units / Rail
50 Units / Rail
TIP29AG
TO−220
(Pb−Free)
TIP29B
TO−220
50 Units / Rail
50 Units / Rail
TIP29BG
TO−220
(Pb−Free)
TIP29C
TO−220
50 Units / Rail
50 Units / Rail
TIP29CG
TO−220
(Pb−Free)
TIP30
TO−220
50 Units / Rail
50 Units / Rail
TIP30G
TO−220
(Pb−Free)
TIP30A
TO−220
50 Units / Rail
50 Units / Rail
TIP30AG
TO−220
(Pb−Free)
TIP30B
TO−220
50 Units / Rail
50 Units / Rail
TIP30BG
TO−220
(Pb−Free)
TIP30C
TO−220
50 Units / Rail
50 Units / Rail
TIP30CG
TO−220
(Pb−Free)
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2
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I = 30 mAdc, I = 0) (Note 2)
V
CEO(sus)
Vdc
C
B
TIP29, TIP30
TIP29A, TIP30A
TIP29B, TIP30B
TIP29C, TIP30C
40
60
80
−
−
−
−
100
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
mAdc
CEO
TIP29, TIP29A, TIP30, TIP30A
TIP29B, TIP29C, TIP30B, TIP30C
−
−
0.3
0.3
CE
B
(V = 60 Vdc, I = 0)
CE
B
Collector Cutoff Current
(V = 40 Vdc, V = 0)
I
mAdc
CES
TIP29, TIP30
TIP29A, TIP30A
TIP29B, TIP30B
TIP29C, TIP30C
CE
EB
−
−
−
−
200
200
200
200
(V = 60 Vdc, V = 0)
CE
EB
(V = 80 Vdc, V = 0)
CE
EB
(V = 100 Vdc, V = 0)
CE
EB
Emitter Cutoff Current (V = 5.0 Vdc, I = 0)
I
−
1.0
mAdc
BE
C
EBO
ON CHARACTERISTICS (Note 2)
DC Current Gain (I = 0.2 Adc, V = 4.0 Vdc)
h
FE
40
15
−
75
−
C
CE
DC Current Gain (I = 1.0 Adc, V = 4.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage (I = 1.0 Adc, I = 125 mAdc)
V
CE(sat)
−
−
0.7
1.3
Vdc
Vdc
C
B
Base−Emitter On Voltage (I = 1.0 Adc, V = 4.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 3)
(I = 200 mAdc, V = 10 Vdc, f = 1.0 MHz)
f
3.0
20
−
−
MHz
T
C
CE
test
Small−Signal Current Gain (I = 0.2 Adc, V = 10 Vdc, f = 1.0 kHz)
h
fe
−
C
CE
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%
3. f = ⎪h ⎪• f
test
T
fe
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3
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
3.0
2.0
500
300
I
= I
B1 B2
I /I = 10
T = 150°C
V
CE
= 2.0 V
C B
J
t ′
s
t ′ = t - 1/8 t
f
s
s
1.0
0.7
0.5
T = 25°C
J
25°C
t @ V = 30 V
f CC
100
70
-ꢀ55°C
50
0.3
0.2
t @ V = 10 V
CC
f
30
10
0.1
0.07
0.05
7.0
5.0
0.03
0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
0.03 0.05 0.07 0.1
0.5 0.7 1.0
3.0
0.3
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 2. DC Current Gain
Figure 3. Turn−Off Time
TURN-ON PULSE
V
CC
2.0
1.0
APPROX
+11 V
R
C
I /I = 10
C B
T = 25°C
J
t @ V = 30 V
CC
SCOPE
r
V
0.7
0.5
in
V 0
in
R
B
V
EB(off)
t
1
0.3
t @ V = 10 V
CC
r
C
<< C
jd
eb
t
3
APPROX
+11 V
-ꢀ4.0 V
t ≤ 7.0 ns
1
0.1
0.07
0.05
100 < t < 500 ms
t @ V
d
= 2.0 V
2
t < 15 ns
EB(off)
V
in
3
DUTY CYCLE ≈ 2.0%
APPROX -ꢀ9.0 V
0.03
0.02
t
2
R and R VARIED TO OBTAIN
B
C
DESIRED CURRENT LEVELS.
TURN-OFF PULSE
0.03 0.05 0.07 0.1
0.3
0.5 0.7 1.0
3.0
I , COLLECTOR CURRENT (AMP)
C
Figure 4. Switching Time Equivalent Circuit
Figure 5. Turn−On Time
10
3.0
0.1
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
T = 150°C
J
breakdown. Safe operating area curves indicate I − V
C
CE
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
1 ms
The data of Figure 6 is based on T
= 150°C; T is
dc
J(pk)
C
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
SECOND BREAKDOWN LIMITED
THERMALLY LIMITED @ T = 25°C
BONDING WIRE LIMITED
J(pk)
5 ms
C
v 150°C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
TIP29, 30
CURVES APPLY BELOW
RATED V
TIP29A, 30A
TIP29B, 30B
TIP29C, 30C
CEO
0.1
1.0
4.0
10
20
40
100
V
CE
, COLLECTOR-EMITTER VOLTAGE, (VOLTS)
Figure 6. Active Region Safe Operating Area
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4
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.91
4.09
2.66
4.10
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.036
0.161
0.105
0.161
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
K
Q
Z
1
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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TIP29B/D
相关型号：
TIP29A-6264
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