TIP31BG [ONSEMI]

NPN Bipolar Power Transistor;


型号：	TIP31BG
厂家：	ONSEMI
描述：	NPN Bipolar Power Transistor 局域网开关晶体管功率双极晶体管
文件：	总6页 (文件大小：87K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TIP31, TIP31A, TIP31B, TIP31C,

(NPN), TIP32, TIP32A, TIP32B,

TIP32C, (PNP)

Complementary Silicon

Plastic Power Transistors

http://onsemi.com

Designed for use in general purpose amplifier and switching

applications.

3 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

40−60−80−100 VOLTS,

40 WATTS

Features

• Collector−Emitter Saturation Voltage −

= 1.2 Vdc (Max) @ I = 3.0 Adc

CE(sat)

• Collector−Emitter Sustaining Voltage −

= 40 Vdc (Min) − TIP31, TIP32

= 60 Vdc (Min) − TIP31A, TIP32A

= 80 Vdc (Min) − TIP31B, TIP32B

= 100 Vdc (Min) − TIP31C, TIP32C

CEO(sus)

MARKING

DIAGRAM

• High Current Gain − Bandwidth Product

= 3.0 MHz (Min) @ I = 500 mAdc

• Compact TO−220 AB Package

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

TO−220AB

CASE 221A

STYLE 1

TIP3xxG

AYWW

Symbol

Value

Unit

Collector − Emitter Voltage TIP31, TIP32

TIP31A, TIP32A

Vdc

CEO

TIP31B, TIP32B

100

TIP31C, TIP32C

Collector−Base Voltage

TIP31, TIP32

TIP31A, TIP32A

TIP31B, TIP32B

TIP31C, TIP32C

Vdc

TIP3xx = Device Code

= 1, 1A, 1B, 1C,

2, 2A, 2B, 2C,

= Assembly Location

= Year

100

Emitter−Base Voltage

Collector Current

5.0

Vdc

Adc

Continuous

Peak

3.0

5.0

= Work Week

Pb−Free Package

Base Current

1.0

Adc

Total Power Dissipation

@ T = 25_C

0.32

W/_C

ORDERING INFORMATION

Derate above 25_C

See detailed ordering and shipping information in the package

Total Power Dissipation

dimensions section on page 2 of this data sheet.

@ T = 25_C

2.0

0.016

Derate above 25_C

W/_C

Unclamped Inductive Load Energy (Note 1)

Operating and Storage Junction

Temperature Range

T , T

–65 to

+150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. I = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V = 10 V, R = 100 W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

September, 2005 − Rev. 10

TIP31A/D

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Ambient

Symbol

Max

62.5

Unit

_C/W

Thermal Resistance, Junction−to−Case

3.125

ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(I = 30 mAdc, I = 0)

TIP31, TIP32

−

Vdc

CEO(sus)

TIP31A, TIP32A

TIP31B, TIP32B

TIP31C, TIP32C

100

Collector Cutoff Current (V = 30 Vdc, I = 0)

TIP31, TIP32, TIP31A, TIP32A

CEO

−

0.3

mAdc

Collector Cutoff Current (V = 60 Vdc, I = 0)

TIP31B, TIP31C, TIP32B, TIP32C

Collector Cutoff Current

(V = 40 Vdc, V = 0)

mAdc

CES

TIP31, TIP32

TIP31A, TIP32A

TIP31B, TIP32B

TIP31C, TIP32C

−

200

(V = 60 Vdc, V = 0)

(V = 80 Vdc, V = 0)

(V = 100 Vdc, V = 0)

Emitter Cutoff Current (V = 5.0 Vdc, I = 0)

−

1.0

mAdc

−

EBO

ON CHARACTERISTICS (Note 2)

DC Current Gain (I = 1.0 Adc, V = 4.0 Vdc)

−

DC Current Gain (I = 3.0 Adc, V = 4.0 Vdc)

Collector−Emitter Saturation Voltage (I = 3.0 Adc, I = 375 mAdc)

CE(sat)

−

1.2

1.8

Vdc

Base−Emitter On Voltage (I = 3.0 Adc, V = 4.0 Vdc)

BE(on)

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (I = 500 mAdc, V = 10 Vdc, f

= 1.0 MHz)

3.0

−

MHz

−

test

Small−Signal Current Gain (I = 0.5 Adc, V = 10 Vdc, f = 1.0 kHz)

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION

Device

Package

Shipping

TIP31

TO−220

50 Units / Rail

TIP31G

TO−220

(Pb−Free)

TIP31A

TO−220

50 Units / Rail

TIP31AG

TO−220

(Pb−Free)

TIP31B

TO−220

50 Units / Rail

TIP31BG

TO−220

(Pb−Free)

TIP31C

TO−220

50 Units / Rail

TIP31CG

TO−220

(Pb−Free)

TIP32

TO−220

50 Units / Rail

TIP32G

TO−220

(Pb−Free)

TIP32A

TO−220

50 Units / Rail

TIP32AG

TO−220

(Pb−Free)

TIP32B

TO−220

50 Units / Rail

TIP32BG

TO−220

(Pb−Free)

TIP32C

TO−220

50 Units / Rail

TIP32CG

TO−220

(Pb−Free)

http://onsemi.com

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

40 4.0

30 3.0

20 2.0

10 1.0

100

120

140

160

T, TEMPERATURE (°C)

Figure 1. Power Derating

TURN−ON PULSE

APPROX

+11 V

2.0

1.0

I /I = 10

T = 25°C

SCOPE

0.7

0.5

t @ V = 30 V

EB(off)

0.3

t @ V = 10 V

<< C

APPROX

+11 V

−4.0 V

≤ 7.0 ns

0.1

100 < t < 500 ms

0.07

0.05

t @ V

= 2.0 V

t < 15 ns

EB(off)

0.03

0.02

DUTY CYCLE ≈ 2.0%

APPROX −9.0 V

TURN−OFF PULSE

0.03 0.05

0.1

0.3 0.5

1.0

3.0

I , COLLECTOR CURRENT (AMP)

and R VARIED TO OBTAIN DESIRED CURRENT LEVELS.

Figure 2. Switching Time Equivalent Circuit

Figure 3. Turn−On Time

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TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

1.0

0.7

D = 0.5

0.5

0.3

0.2

0.1

0.07

0.05

(pk)

= r(t) R

JC(t)

0.05

0.02

(t) = 3.125°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

0.03

0.02

0.01

0.02

− T = P

(pk) JC(t)

J(pk)

DUTY CYCLE, D = t /t

1 2

SINGLE PULSE

0.05 1.0

0.01

0.2

0.5

1.0

2.0

5.0

100

200

500

1.0 k

t, TIME (ms)

Figure 4. Thermal Response

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

5.0

breakdown. Safe operating area curves indicate I − V

100ꢀms

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

5.0ꢀms

2.0

1.0ꢀms

SECONDARY BREAKDOWN

LIMITED @ T ≤ 150°C

THERMAL LIMIT @ T = 25°C

1.0

0.5

The data of Figure 5 is based on T

variable depending on conditions. Second breakdown pulse

= 150_C; T is

J(pk)

limits are valid for duty cycles to 10% provided T

(SINGLE PULSE)

BONDING WIRE LIMIT

J(pk)

v 150_C.

may be calculated from the data in

J(pk)

TIP31A, TIP32A

TIP31B, TIP32B

TIP31C, TIP32C

0.2

0.1

CURVES APPLY

BELOW RATED V

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

CEO

5.0

100

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

3.0

300

= I

B1 B2

I /I = 10

2.0

T = +ꢂ25°C

C B

t ′

200

t ′ = t − 1/8 t

1.0

t @ V = 30 V

f CC

T = 25°C

0.7

0.5

100

0.3

0.2

t @ V = 10 V

f CC

0.1

0.07

0.05

0.03

0.03 0.05 0.07 0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

0.1

0.2 0.3 0.5

1.0

2.0 3.0 5.0

20 30 40

I , COLLECTOR CURRENT (AMP)

V , REVERSE VOLTAGE (VOLTS)

Figure 6. Turn−Off Time

Figure 7. Capacitance

http://onsemi.com

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

500

300

2.0

T = 25°C

T = 150°C

= 2.0 V

1.6

1.2

0.8

0.4

25°C

100

I = 0.3 A

1.0 A

3.0 A

−55°C

7.0

5.0

0.03 0.05 0.07 0.1

0.3

0.5 0.7 1.0

3.0

1.0

2.0

5.0

100 200

500 1000

I , COLLECTOR CURRENT (AMP)

I , BASE CURRENT (mA)

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

1.4

1.2

1.0

0.8

+ꢂ2.5

+ꢂ2.0

+ꢂ1.5

+ꢂ1.0

T = 25°C

*APPLIES FOR I /I ≤ h /2

T = −ꢂ65°C TO +ꢂ150°C

C B

+ꢂ0.5

*q FOR V

VC CE(sat)

@ I /I = 10

C B

BE(sat)

0.6

0.4

0.2

−ꢂ0.5

−ꢂ1.0

−ꢂ1.5

@ V = 2.0 V

FOR V

@ I /I = 10

C B

CE(sat)

−ꢂ2.0

−ꢂ2.5

0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0

0.003 0.005 0.01 0.02

0.05 0.1 0.2 0.3 0.5

1.0 2.0 3.0

I , COLLECTOR CURRENT (AMPS)

I , COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

Figure 11. Temperature Coefficients

= 30 V

I = 10 x I

CES

T = 150°C

≈ I

CES

100°C

I = 2 x I

CES

−1

−2

−3

REVERSE

FORWARD

(TYPICAL I VALUES

CES

OBTAINED FROM FIGURE 12)

25°C

CES

−

0.4

−

−0

.2 −ꢂ0.1

+ꢂ0.1 +ꢂ0.2 +ꢂ0.3 +ꢂ0.4 +ꢂ0.5 +ꢂ0.6

100

120

140

160

, BASE−EMITTER VOLTAGE (VOLTS)

T , JUNCTION TEMPERATURE (°C)

Figure 12. Collector Cut−Off Region

Figure 13. Effects of Base−Emitter Resistance

http://onsemi.com

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

SEATING

PLANE

−T−

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

−−−

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

−−−

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

−−−

−−− 0.080

2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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PUBLICATION ORDERING INFORMATION

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Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

TIP31A/D

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TIP31BG [ONSEMI]

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TIP31BNPN

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TIP31BU2

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