TIP42CTU [ONSEMI]
PNP外延硅晶体管;
| 型号： | TIP42CTU |
| 厂家： | 
ONSEMI |
| 描述： | PNP外延硅晶体管 局域网 PC 开关 晶体管 功率双极晶体管 |
| 文件： | 总6页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIP41, TIP41A, TIP41B,
TIP41C (NPN); TIP42, TIP42A,
TIP42B, TIP42C (PNP)
Complementary Silicon
Plastic Power Transistors
http://onsemi.com
Designed for use in general purpose amplifier and switching
applications.
6 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
40-60-80-100 VOLTS,
65 WATTS
Features
•ꢀESD Ratings:
Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
•ꢀEpoxy Meets UL 94 V-0 @ 0.125 in
•ꢀPb-Free Packages are Available*
MAXIMUM RATINGS
Rating
MARKING
DIAGRAM
Symbol
Value
Unit
Collector-Emitter Voltage
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
V
CEO
40
60
80
100
Vdc
4
Collector-Base Voltage
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
V
40
60
80
100
Vdc
TO-220AB
CASE 221A
STYLE 1
CB
TIP4xxG
AYWW
1
2
3
Emitter-Base Voltage
Collector Current-
V
5.0
Vdc
Adc
EB
Continuous
Peak
I
6.0
10
C
TIP4xx = Device Code
= 1, 1A, 1B, 1C
2, 2A, 2B, 2C
Base Current
I
2.0
Adc
B
xx
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
65
0.52
W
W/°C
C
D
A
= Assembly Location
= Year
Y
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
2.0
0.016
W
W/°C
A
D
WW
G
= Work Week
= Pb-Free Package
Unclamped Inductive Load Energy
(Note 1)
E
62.5
mJ
Operating and Storage Junction,
Temperature Range
T , T
J
–ꢁ65 to
+150
°C
stg
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
1.67
57
Unit
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
q
JC
R
q
JA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. I = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V = 10 V, R = 100 W.
BE
C
CC
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©ꢀ Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 7
1
Publication Order Number:
TIP41A/D
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 2)
(I = 30 mAdc, I = 0)
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
V
40
60
-
-
-
-
Vdc
CEO(sus)
C
B
80
100
Collector Cutoff Current
(V = 30 Vdc, I = 0)
(V = 60 Vdc, I = 0)
I
mAdc
CEO
TIP41, TIP41A, TIP42, TIP42A
TIP41B, TIP41C, TIP42B, TIP42C
-
-
0.7
0.7
CE
B
CE
B
Collector Cutoff Current
(V = 40 Vdc, V = 0)
(V = 60 Vdc, V = 0)
I
mAdc
CES
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
-
-
-
-
400
400
400
400
CE
EB
CE
EB
(V = 80 Vdc, V = 0)
CE EB
(V = 100 Vdc, V = 0)
CE
EB
Emitter Cutoff Current (V = 5.0 Vdc, I = 0)
BE C
I
-
1.0
mAdc
-
EBO
ON CHARACTERISTICS (Note 2)
DC Current Gain (I = 0.3 Adc, V = 4.0 Vdc)
h
FE
30
15
-
75
C
CE
DC Current Gain (I = 3.0 Adc, V = 4.0 Vdc)
C
CE
Collector-Emitter Saturation Voltage (I = 6.0 Adc, I = 600 mAdc)
B
V
CE(sat)
-
-
1.5
2.0
Vdc
Vdc
C
Base-Emitter On Voltage (I = 6.0 Adc, V = 4.0 Vdc)
CE
V
BE(on)
C
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product (I = 500 mAdc, V = 10 Vdc, f
CE
= 1.0
f
T
3.0
20
-
-
MHz
-
C
test
MHz)
Small-Signal Current Gain (I = 0.5 Adc, V = 10 Vdc, f = 1.0 kHz)
CE
h
fe
C
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device
Package
Shipping
TIP41
TO-220
50 Units / Rail
50 Units / Rail
TIP41G
TO-220
(Pb-Free)
TIP41A
TO-220
50 Units / Rail
50 Units / Rail
TIP41AG
TO-220
(Pb-Free)
TIP41B
TO-220
50 Units / Rail
50 Units / Rail
TIP41BG
TO-220
(Pb-Free)
TIP41C
TO-220
50 Units / Rail
50 Units / Rail
TIP41CG
TO-220
(Pb-Free)
TIP42
TO-220
50 Units / Rail
50 Units / Rail
TIP42G
TO-220
(Pb-Free)
TIP42A
TO-220
50 Units / Rail
50 Units / Rail
TIP42AG
TO-220
(Pb-Free)
TIP42B
TO-220
50 Units / Rail
50 Units / Rail
TIP42BG
TO-220
(Pb-Free)
TIP42C
TO-220
50 Units / Rail
50 Units / Rail
TIP42CG
TO-220
(Pb-Free)
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2
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
T
A
T
C
4.0 80
3.0 60
2.0 40
1.0 20
T
C
T
A
0
0
0
20
40
60
100
120
140
160
80
T, TEMPERATURE (°C)
Figure 1. Power Derating
V
CC
+ꢂ30 V
2.0
T = 25°C
1.0
J
R
C
25 ms
V
CC
I /I = 10
= 30 V
0.7
0.5
SCOPE
+11 V
0
C B
R
B
0.3
0.2
t
r
-ꢂ9.0 V
D
1
t , t ≤ 10 ns
0.1
0.07
0.05
r
f
DUTY CYCLE = 1.0%
t @ V
d
≈ 5.0 V
-ꢂ4 V
BE(off)
R and R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
B
0.03
0.02
D MUST BE FAST RECOVERY TYPE, e.g.:
1
ꢃꢃ1N5825 USED ABOVE I ≈ 100 mA
0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0 6.0
B
ꢃꢃMSD6100 USED BELOW I ≈ 100 mA
B
I , COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Time Test Circuit
Figure 3. Turn-On Time
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3
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
0.1
0.07
0.05
(pk)
Z
= r(t) R
q
JC
q
JC(t)
0.05
0.02
R
= 1.92°C/W MAX
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.03
0.02
t
1
2
T
- T = P
C
Z
q
(pk) JC(t)
0.01
J(pk)
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.05
0.01
0.01
0.02
1.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
t, TIME (ms)
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I - V
0.5ꢁms
5.0
C
CE
1.0ꢁms
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
3.0
2.0
T = 150°C
J
CURVES APPLY BELOW RATED V
CEO
SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
5.0ꢁms
1.0
0.5
The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse
= 150°C; T is
J(pk)
C
THERMAL LIMITATION @ T = 25°C
C
(SINGLE PULSE)
limits are valid for duty cycles to 10% provided T
may be calculated from the data in
J(pk)
J(pk)
v 150°C.
T
0.3
0.2
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1
5.0
10
20
40
60
80 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active-Region Safe Operating Area
5.0
300
T = 25°C
J
3.0
2.0
T = 25°C
J
200
V
CC
I /I = 10
= 30 V
C B
t
s
I = I
B1 B2
1.0
C
C
ib
0.7
0.5
100
70
0.3
0.2
t
f
ob
50
0.1
0.07
0.05
30
0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0 6.0
0.5
1.0
2.0 3.0
5.0
10
20 30
50
I , COLLECTOR CURRENT (AMP)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Turn-Off Time
Figure 7. Capacitance
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4
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
500
2.0
T = 25°C
300
200
J
V
CE
= 2.0 V
1.6
1.2
0.8
0.4
0
T = 150°C
J
100
70
25°C
I = 1.0 A
C
2.5 A
5.0 A
50
30
20
-ꢂ55°C
10
7.0
5.0
0.06 0.1
0.2 0.3 0.4 0.6
1.0
2.0
4.0 6.0
10
20 30
50
100
200 300 500
1000
I , COLLECTOR CURRENT (AMP)
C
I , BASE CURRENT (mA)
B
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
2.0
1.6
1.2
0.8
0.4
0
+ꢂ2.5
+ꢂ2.0
+ꢂ1.5
T = 25°C
J
*APPLIES FOR I /I ≤ h /4
C B
FE
+ꢂ1.0
+ꢂ0.5
0
+ꢂ25°C to +ꢂ150°C
*ꢂq FOR V
VC
CE(sat)
-ꢂ55°C to +ꢂ25°C
+ꢂ25°C to +ꢂ150°C
V
V
@ I /I = 10
C B
BE(sat)
-ꢂ0.5
-ꢂ1.0
-ꢂ1.5
-ꢂ2.0
-ꢂ2.5
V
@ V = 4.0 V
CE
BE
q
FOR V
BE
VB
-ꢂ55°C to +ꢂ25°C
@ I /I = 10
C B
CE(sat)
0.06 0.1
0.2 0.3 0.4 0.6
1.0
2.0 3.0 4.0 6.0
0.06 0.1
0.2 0.3
0.5
1.0
2.0 3.0 4.0 6.0
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
3
2
1
0
10
10
10
10
10ꢁM
V
= 30 V
CE
V
CE
= 30 V
1.0ꢁM
100ꢁk
10ꢁk
I = 10 x I
C
CES
T = 150°C
J
100°C
I
C
≈ I
CES
25°C
I = I
C
-1
-2
-3
CES
I = 2 x I
C
CES
10
10
10
1.0ꢁk
0.1ꢁk
REVERSE
FORWARD
(TYPICAL I VALUES
CES
OBTAINED FROM FIGURE 12)
-ꢂ0.3 -ꢂ0.2 -ꢂ0.1
V
0
+ꢂ0.1 +ꢂ0.2 +ꢂ0.3 +ꢂ0.4 +ꢂ0.5 +ꢂ0.6 +ꢂ0.7
20
40
60
80
100
120
140
160
, BASE-EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
BE
J
Figure 12. Collector Cut-Off Region
Figure 13. Effects of Base-Emitter Resistance
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5
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
PACKAGE DIMENSIONS
TO-220
CASE 221A-09
ISSUE AE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
-T-
C
B
F
T
S
INCHES
DIM MIN
MILLIMETERS
4
MAX
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
A
K
Q
Z
1
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
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TIP41A/D
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