首页 |元器件品牌

TIP47BC [ONSEMI]

1A, 250V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN;
TIP47BC
型号： TIP47BC
厂家： ONSEMI    ONSEMI
描述：

1A, 250V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

局域网 开关 晶体管
文件： 总6页 (文件大小：114K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
TIP47G, TIP48G, TIP50G  
High Voltage NPN Silicon  
Power Transistors  
This series is designed for line operated audio output amplifier,  
SWITCHMODE power supply drivers and other switching  
applications.  
http://onsemi.com  
Features  
• Popular TO−220 Plastic Package  
• These Devices are Pb−Free and are RoHS Compliant*  
• Complementary to the MJE5730 and MJE5731 Series  
1.0 AMPERE  
POWER TRANSISTORS  
NPN SILICON  
250−300−400 VOLTS  
40 WATTS  
MAXIMUM RATINGS  
Rating  
Symbol TIP47 TIP48 TIP50 Unit  
Collector − Emitter Voltage  
Collector − Base Voltage  
Emitter − Base Voltage  
Collector Current − Continuous  
Collector Current − Peak  
Base Current  
V
250  
350  
300  
400  
5.0  
1.0  
2.0  
0.6  
400  
500  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Adc  
CEO  
COLLECTOR  
2,4  
V
CB  
V
EB  
I
C
1
I
BASE  
CM  
I
B
3
Total Power Dissipation  
P
P
EMITTER  
D
@ T = 25_C  
40  
0.32  
C
W
W/_C  
Derate above 25_C  
MARKING  
DIAGRAM  
Total Power Dissipation  
D
@ T = 25_C  
2.0  
0.016  
C
W
Derate above 25_C  
W/_C  
mJ  
Unclamped Inducting Load  
Energy (See Figure 8)  
E
20  
4
Operating and Storage  
T , T  
−65 to +150  
_C  
J
stg  
TIPxxG  
AYWW  
Junction Temperature Range  
TO−220AB  
CASE 221A  
STYLE 1  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1
2
3
TIPxx  
xx  
A
Y
WW  
G
= Device Code  
= 47, 48, or 50  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
Junction−to−Case  
R
3.125  
°C/W  
q
JC  
Thermal Resistance,  
Junction−to−Ambient  
R
62.5  
°C/W  
q
JA  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 − Rev. 10  
TIP47/D  
TIP47G, TIP48G, TIP50G  
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector−Emitter Sustaining Voltage (Note 1)  
(I = 30 mAdc, I = 0)  
TIP47  
TIP48  
TIP50  
V
250  
300  
400  
−
−
−
Vdc  
CEO(sus)  
C
B
Collector Cutoff Current  
(V = 150 Vdc, I = 0)  
I
mAdc  
mAdc  
CEO  
TIP47  
TIP48  
TIP50  
CE  
B
−
−
−
1.0  
1.0  
1.0  
(V = 200 Vdc, I = 0)  
CE  
B
(V = 300 Vdc, I = 0)  
CE  
B
Collector Cutoff Current  
(V = 350 Vdc, V = 0)  
I
CES  
TIP47  
TIP48  
TIP50  
CE  
BE  
−
−
−
1.0  
1.0  
1.0  
(V = 400 Vdc, V = 0)  
CE  
BE  
(V = 500 Vdc, V = 0)  
CE  
BE  
Emitter Cutoff Current  
(V = 5.0 Vdc, I = 0)  
I
−
1.0  
mAdc  
EBO  
BE  
C
ON CHARACTERISTICS (Note 1)  
DC Current Gain  
h
FE  
−
(I = 0.3 Adc, V = 10 Vdc)  
C
CE  
30  
10  
150  
−
(I = 1.0 Adc, V = 10 Vdc)  
C
CE  
Collector−Emitter Saturation Voltage  
(I = 1.0 Adc, I = 0.2 Adc)  
V
−
1.0  
1.5  
Vdc  
Vdc  
CE(sat)  
C
B
Base−Emitter On Voltage  
(I = 1.0 Adc, V = 10 Vdc)  
V
BE(on)  
−
C
CE  
DYNAMIC CHARACTERISTICS  
Current−Gain − Bandwidth Product  
f
10  
25  
−
−
MHz  
T
(I = 0.1 Adc, V = 10 Vdc, f = 2.0 MHz)  
C
CE  
Small−Signal Current Gain  
(I = 0.2 Adc, V = 10 Vdc, f = 1.0 kHz)  
h
−
fe  
C
CE  
1. Pulse Test: Pulse width v 300 ms, Duty Cycle v 2.0%.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
TIP47G  
TO−220  
50 Units / Rail  
50 Units / Rail  
50 Units / Rail  
50 Units / Rail  
(Pb−Free)  
TIP48G  
TIP49G  
TIP50G  
TO−220  
(Pb−Free)  
TO−220  
(Pb−Free)  
TO−220  
(Pb−Free)  
http://onsemi.com  
2
 
TIP47G, TIP48G, TIP50G  
T
A
T
C
4
3
2
40  
30  
20  
T
C
T
A
1
0
10  
0
0
20  
40  
60  
100  
120  
140  
160  
80  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
TURN-ON PULSE  
APPROX  
+11 V  
1.0  
V
V
CC  
R
R
T = 25°C  
J
C
0.5  
V
CC  
I /I = 5.0  
= 200 V  
V 0  
in  
SCOPE  
C B  
in  
V
t
EB(off)  
r
B
t
1
0.2  
0.1  
t
3
C
<< C  
jd  
eb  
APPROX  
+11 V  
t
d
-ꢀ4.0 V  
t ≤ 7.0 ns  
1
0.05  
100 < t < 500 ms  
V
in  
2
t < 15 ns  
3
0.02  
0.01  
DUTY CYCLE ≈ 2.0%  
APPROX -ꢀ9.0 V  
t
2
TURN-OFF PULSE  
0.02  
0.05  
0.1  
0.2  
0.5  
1.0  
2.0  
I , COLLECTOR CURRENT (AMPS)  
C
R and R VARIED TO OBTAIN DESIRED CURRENT LEVELS.  
B C  
Figure 2. Switching Time Equivalent Circuit  
Figure 3. Turn−On Time  
1.0  
0.7  
0.5  
D = 0.5  
0.3  
0.2  
0.2  
0.1  
P
(pk)  
0.1  
Z
= r(t) R  
q
JC  
q
JC(t)  
0.05  
0.02  
0.07  
0.05  
R
= 3.125°C/W MAX  
q
JC  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
READ TIME AT t  
t
1
0.03  
0.02  
t
2
1
0.01  
T
- T = P  
C
Z
q
(pk) JC(t)  
J(pk)  
DUTY CYCLE, D = t /t  
1 2  
SINGLE PULSE  
0.01  
0.01  
0.02  
0.05  
1.0  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
500  
1.0 k  
t, TIME (ms)  
Figure 4. Thermal Response  
http://onsemi.com  
3
 
TIP47G, TIP48G, TIP50G  
5.0  
There are two limitations on the power handling ability of  
a transistor: average junction temperature and second  
breakdown. Safe operating area curves indicate I − V  
limits of the transistor that must be observed for reliable  
operation, i.e., the transistor must not be subjected to greater  
dissipation than the curves indicate.  
T
≤ 25°C  
C
2.0  
1.0  
0.5  
100ꢂms  
500ꢂms  
C
CE  
1.0ꢂms  
dc  
The data of Figure 5 is based on T  
variable depending on conditions. Second breakdown pulse  
limits are valid for duty cycles to 10% provided T  
= 150_C; T is  
0.2  
0.1  
J(pk)  
C
SECONDARY BREAKDOWN LIMITED  
THERMALLY LIMITED @ 25°C  
BONDING WIRE LIMITED  
J(pk)  
0.05  
0.02  
v 150_C. T  
may be calculated from the data in  
J(pk)  
TIP47  
TIP48  
TIP50  
Figure 4. At high case temperatures, thermal limitations will  
reduce the power that can be handled to values less than the  
limitations imposed by second breakdown.  
CURVES APPLY  
BELOW RATED V  
CEO  
5.0  
10  
V
20  
50  
100  
200  
500  
, COLLECTOR-EMITTER VOLTAGE (VOLTS)  
CE  
Figure 5. Active Region Safe Operating Area  
5.0  
+ꢀ4.5  
t
s
*APPLIES FOR I /I ≤ h /5  
C B  
FE  
+ꢀ3.5  
+ꢀ2.5  
+ꢀ1.5  
2.0  
1.0  
0.5  
T = 25°C  
J
V
CC  
I /I = 5.0  
= 200 V  
+ꢀ25°C to +ꢀ150°C  
C B  
+ꢀ0.5  
0
-ꢀ0.5  
q
FOR V  
CE(sat)  
VC  
t
f
0.2  
0.1  
-ꢀ55°C to +ꢀ25°C  
+ꢀ25°C to +ꢀ150°C  
-ꢀ1.5  
-ꢀ2.5  
q
FOR V  
BE  
VB  
-ꢀ55°C to +ꢀ25°C  
1.0 2.0  
0.05  
0.02  
0.05  
0.1  
0.2  
0.5  
1.0  
2.0  
0.02  
0.05  
0.1  
0.2  
0.5  
I , COLLECTOR CURRENT (AMPS)  
C
I , COLLECTOR CURRENT (AMPS)  
C
Figure 6. Turn−Off Time  
Figure 7. Temperature Coefficients  
t
≈ 3 ms  
(SEE NOTE A)  
w
V
CE  
MONITOR  
TUT  
0 V  
INPUT  
VOLTAGE  
-ꢀ5 V  
R
=
BB1  
100 mH  
= 20 V  
MJE171  
100 ms  
150 W  
0.63 A  
50  
V
CC  
COLLECTOR  
CURRENT  
INPUT  
I MONITOR  
C
R
=
0 V  
50  
BB2  
100 W  
V
CER  
R =  
S
V
0
=
BB2  
V
BB1  
= 10 V  
0.1 W  
COLLECTOR  
VOLTAGE  
10 V  
V
CE(sat)  
Note A: Input pulse width is increased until I  
= 0.63 A.  
CM  
Figure 8. Inductive Load Switching  
http://onsemi.com  
4
 
TIP47G, TIP48G, TIP50G  
200  
100  
V
CE  
= 10 V  
T = 150°C  
J
60  
40  
25°C  
20  
10  
-ꢀ55°C  
6.0  
4.0  
2.0  
0.02  
0.04 0.06  
0.1  
0.2  
0.4 0.6  
1.0  
2.0  
I , COLLECTOR CURRENT (AMPS)  
C
Figure 9. DC Current Gain  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
@ I /I = 5.0 V  
C B  
BE(sat)  
V
@ V = 4 V  
CE  
BE(on)  
0.2  
0
V
@ I /I = 5.0 V  
C B  
CE(sat)  
0.02  
0.04 0.06  
0.1  
0.2  
0.4 0.6  
1.0  
2.0  
I , COLLECTOR CURRENT (AMPS)  
C
Figure 10. “On” Voltages  
http://onsemi.com  
5
TIP47G, TIP48G, TIP50G  
PACKAGE DIMENSIONS  
TO−220  
CASE 221A−09  
ISSUE AG  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION Z DEFINES A ZONE WHERE ALL  
BODY AND LEAD IRREGULARITIES ARE  
ALLOWED.  
SEATING  
PLANE  
−T−  
C
B
F
T
S
INCHES  
DIM MIN MAX  
MILLIMETERS  
4
1
MIN  
14.48  
9.66  
4.07  
0.64  
3.61  
2.42  
2.80  
0.36  
12.70  
1.15  
4.83  
2.54  
2.04  
1.15  
5.97  
0.00  
1.15  
---  
MAX  
15.75  
10.28  
4.82  
0.91  
4.09  
2.66  
4.10  
0.64  
14.27  
1.52  
5.33  
3.04  
2.79  
1.39  
6.47  
1.27  
---  
A
B
C
D
F
0.570  
0.380  
0.160  
0.025  
0.142  
0.095  
0.110  
0.014  
0.500  
0.045  
0.190  
0.100  
0.080  
0.045  
0.235  
0.000  
0.045  
---  
0.620  
0.405  
0.190  
0.036  
0.161  
0.105  
0.161  
0.025  
0.562  
0.060  
0.210  
0.120  
0.110  
0.055  
0.255  
0.050  
---  
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080  
2.04  
N
STYLE 1:  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
4. COLLECTOR  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,  
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC  
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without  
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications  
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC  
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for  
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where  
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and  
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,  
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture  
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
TIP47/D  

相关型号：

TIP47BD

 1A, 250V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ONSEMI

TIP47BG

 TRANSISTOR 1 A, 250 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ONSEMI

TIP47BU

 1A, 250V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ONSEMI

TIP47BV

 TRANSISTOR 1 A, 250 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ONSEMI

TIP47C

 Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
MOTOROLA

TIP47D1

 Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
MOTOROLA

TIP47DW

 1A, 250V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ONSEMI

TIP47G

 High Voltage NPN Silicon Power Transistors

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ONSEMI

TIP47J69Z

 Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
FAIRCHILD

TIP47L

 1A, 250V, NPN, Si, POWER TRANSISTOR, TO-220AB

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
MOTOROLA

TIP47LEADFREE

 Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
CENTRAL

TIP47N

 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
MOTOROLA
©2020 ICPDF网 联系我们和版权申明