TIP47TU [ONSEMI]
1.0 A, 250 V NPN Bipolar Power Transistor;
| 型号： | TIP47TU |
| 厂家： | 
ONSEMI |
| 描述： | 1.0 A, 250 V NPN Bipolar Power Transistor 晶体管 功率双极晶体管 |
| 文件： | 总6页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by TIP47/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for line operated audio output amplifier, Switchmode power supply
drivers and other switching applications.
*Motorola Preferred Device
•
•
•
250 V to 400 V (Min) — V
CEO(sus)
1 A Rated Collector Current
1.0 AMPERE
POWER TRANSISTORS
NPN SILICON
Popular TO–220 Plastic Package
MAXIMUM RATINGS
Rating
250–300–350–400 VOLTS
40 WATTS
Symbol TIP47
TIP48
300
TIP49
350
TIP50
400
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
250
350
CEO
V
400
450
500
CB
V
EB
5.0
Collector Current — Continuous
Peak
I
C
1.0
2.0
Base Current
I
B
0.6
Adc
Total Power Dissipation
P
D
@ T = 25 C
40
0.32
Watts
W/ C
C
Derate above 25 C
Total Power Dissipation
P
D
@ T = 25 C
2.0
0.016
Watts
W/ C
A
CASE 221A–06
TO–220AB
Derate above 25 C
Unclamped Inducting Load
Energy (See Figure 8)
E
20
mJ
Operating and Storage Junction
Temperature Range
T , T
J stg
–65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
3.125
62.5
Unit
C/W
C/W
Thermal Resistance, Junction to Case
R
θJC
θJA
Thermal Resistance, Junction to Ambient
R
T
T
C
A
4
3
2
40
30
20
T
C
T
A
1
0
10
0
0
20
40
60
100
120
C)
140
160
80
T
, CASE TEMPERATURE (°
C
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
TIP47
TIP48
TIP49
TIP50
V
250
300
350
400
—
—
—
—
Vdc
CEO(sus)
(I = 30 mAdc, I = 0)
C
B
Collector Cutoff Current
I
mAdc
mAdc
CEO
(V
CE
(V
CE
(V
CE
(V
CE
= 150 Vdc, I = 0)
TIP47
TIP48
TIP49
TIP50
—
—
—
—
1.0
1.0
1.0
1.0
B
= 200 Vdc, I = 0)
B
= 250 Vdc, I = 0)
B
= 300 Vdc, I = 0)
B
Collector Cutoff Current
I
CES
(V
CE
(V
CE
(V
CE
(V
CE
= 350 Vdc, V
= 400 Vdc, V
= 450 Vdc, V
= 500 Vdc, V
= 0)
= 0)
= 0)
= 0)
TIP47
TIP48
TIP49
TIP50
—
—
—
—
1.0
1.0
1.0
1.0
BE
BE
BE
BE
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
—
1.0
mAdc
—
EBO
BE
C
ON CHARACTERISTICS (1)
DC Current Gain
h
FE
(I = 0.3 Adc, V
(I = 1.0 Adc, V
C
= 10 Vdc)
= 10 Vdc)
30
10
150
—
C
CE
CE
Collector–Emitter Saturation Voltage
(I = 1.0 Adc, I = 0.2 Adc)
V
—
1.0
Vdc
Vdc
CE(sat)
C
B
Base–Emitter On Voltage
(I = 1.0 Adc, V = 10 Vdc)
V
BE(on)
—
1.5
C
CE
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
10
25
—
—
MHz
—
T
(I = 0.1 Adc, V
C CE
= 10 Vdc, f = 2.0 MHz)
Small–Signal Current Gain
(I = 0.2 Adc, V = 10 Vdc, f = 1.0 kHz)
h
fe
C
CE
(1) Pulse Test: Pulse width
300 µs, Duty Cycle
2.0%.
TURN–ON PULSE
APPROX
+11 V
1.0
0.5
V
V
CC
R
R
T
J
= 25
= 200 V
°C
C
V
I
CC
/I = 5.0
V
0
SCOPE
in
EB(off)
C B
in
V
t
r
B
t
0.2
0.1
1
t
3
C
<< C
jd
eb
APPROX
+11 V
t
d
–4.0 V
t
≤
7.0 ns
1
0.05
100 < t < 500
µ
s
V
2
in
t
< 15 ns
3
0.02
0.01
DUTY CYCLE
APPROX –9.0 V
≈ 2.0%
t
2
TURN–OFF PULSE
and R VARIED TO OBTAIN DESIRED CURRENT LEVELS.
0.02
0.05
0.1
0.2
0.5
1.0
2.0
I
, COLLECTOR CURRENT (AMPS)
C
R
B
C
Figure 2. Switching Time Equivalent Circuit
Figure 3. Turn–On Time
2
Motorola Bipolar Power Transistor Device Data
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
0.1
(pk)
Z
R
= r(t) R
θ
θ
θ
JC(t)
JC
JC
°C/W MAX
0.05
0.02
0.07
0.05
= 3.125
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.03
0.02
t
1
2
0.01
0.02
T
– T = P
Z
J(pk)
C
(pk) θ
JC(t)
20
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.05
0.01
0.01
1.0
0.2
0.5
1.0
2.0
5.0
10
50
100
200
500
1.0 k
t, TIME (ms)
Figure 4. Thermal Response
5.0
T
≤ 25°C
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
C
2.0
1.0
0.5
100 µs
down. Safe operating area curves indicate I – V
limits of
C
CE
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
1.0 ms
dc
500 µs
0.2
0.1
The data of Figure 5 is based on T
= 150 C; T is
C
J(pk)
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ 25
BONDING WIRE LIMITED
°C
J(pk)
may be calculated from the data in
0.05
0.02
150 C.
T
J(pk)
TIP47
TIP48
TIP49
TIP50
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
CURVES APPLY
BELOW RATED V
CEO
5.0
10
20
50
100
200
500
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Active Region Safe Operating Area
5.0
+4.5
t
s
*APPLIES FOR I /I
≤
h
/5
C B
FE
+3.5
+2.5
+1.5
2.0
1.0
T
V
= 25°C
J
= 200 V
0.5
CC
/I = 5.0
+25
°
C to +150°C
I
C B
+0.5
0
–0.5
θ
θ
FOR V
CE(sat)
VC
t
f
0.2
0.1
–55°C to +25°C
+25°
C to +150
°C
–1.5
–2.5
FOR V
VB
BE
–55°C to +25
°C
0.05
0.02
0.05
0.1
0.2
0.5
1.0
2.0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
I
, COLLECTOR CURRENT (AMPS)
C
I
, COLLECTOR CURRENT (AMPS)
C
Figure 6. Turn–Off Time
Figure 7. Temperature Coefficients
3
Motorola Bipolar Power Transistor Device Data
t
≈ 3 ms
w
V
MONITOR
TUT
CE
(SEE NOTE A)
0 V
INPUT
VOLTAGE
–5 V
R
=
Ω
BB1
150
100 mH
MJE171
100 ms
0.63 A
50
V
C
= 20 V
CC
MONITOR
COLLECTOR
CURRENT
INPUT
I
R
100
=
Ω
=
0 V
50
BB2
V
CER
R
0.1
=
Ω
S
V
0
BB2
V
= 10 V
BB1
COLLECTOR
VOLTAGE
10 V
V
CE(sat)
Note A: Input pulse width is increased until I
= 0.63 A.
CM
Figure 8. Inductive Load Switching
200
1.4
V
= 10 V
CE
1.2
1.0
0.8
0.6
0.4
100
T
= 150
°
C
J
60
40
25°
C
V
@ I /I = 5.0 V
C B
BE(sat)
20
10
–55°C
V
@ V = 4 V
CE
BE(on)
6.0
4.0
0.2
0
V
@ I /I = 5.0 V
C B
CE(sat)
2.0
0.02
0.04 0.06
I
0.1
0.2
0.4 0.6
1.0
2.0
0.02
0.04 0.06
I
0.1
0.2
0.4 0.6
1.0
2.0
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
C
C
Figure 9. DC Current Gain
Figure 10. “On” Voltages
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
5
Motorola Bipolar Power Transistor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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