TND027SW-TL-2H [ONSEMI]
低压侧电源开关，灯，电磁和电机驱动，双 SOIC8;
| 型号： | TND027SW-TL-2H |
| 厂家： | 
ONSEMI |
| 描述： | 低压侧电源开关，灯，电磁和电机驱动，双 SOIC8 开关 电机 驱动 电源开关 |
| 文件： | 总9页 (文件大小：349K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN7437D
TND027SW
Excellent Power Device
Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving, Dual SOIC8
http://onsemi.com
Features
•
•
•
•
•
•
N-channel MOSFET built in
Overheat protection (Self recovery type)
Halogen free compliance
Overcurrent protection (Self recovery type current limiting function)
Overvoltage protection
Incorporates two sets of circuit
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Output Current
Symbol
Conditions
Ratings
Unit
V
V
60
1.5
DS
(DC)
I
A
O
Input Voltage
V
--0.3 to +10
1.3
V
IN
When mounted on ceramic substrate (1200mm2 0.8mm) 1unit
W
W
V
×
Allowable Power Dissipation
P
D
When mounted on ceramic substrate (1200mm2 0.8mm)
1.7
×
Operating Supply Voltage
Operating Temperature
Junction Temperature
Storage Temperature
V
DS
(opr)
40
Topr
Tj
--40 to +85
150
°C
°C
°C
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: SOIC8
7072-003
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
4.9
TND027SW-TL-2H
0.22
8
5
Packing Type: TL
Marking
TND
027
1 : GND1
2 : IN1
3 : GND2
4 : IN2
TL
LOT No.
1
4
1.27
0.254 (GAGE PLANE)
0.445
5 : OUT2
6 : OUT2
7 : OUT1
8 : OUT1
Block Diagram
OUT(D)
Overcurrent
protective
circuit
Overvoltage
protective circuit
SOIC8
Output current
control
IN
Gate
shutdown
circuit
Overheat
protective
circuit
ESD
protective
circuit
GND(S)
Semiconductor Components Industries, LLC, 2013
August, 2013
D0512 TKIM TC-00002832/O2611 TKIM/D2607IP TIIM TC-00001114/ No.7437-1/9
O2203 TSIM/51503 TSIM TA-100479
TND027SW
at Ta=25°C
Electrical Characteristics
Ratings
typ.
Parameter
Drain-to-Source Clamp Voltage
Output-OFF Current
Symbol
clamp
Conditions
Unit
V
min.
60
max.
V
V
=0V, I =1mA
DS,
IN O
I
1
V
=0V, V =50V
10
A
A
μ
DSS
IN DS
I
2
V
=0V, V =12V
5
2.0
10
μ
DSS
IN DS
Input Threshold Voltage
V
V
DS
=5V, I =1mA
1.0
4
1.5
V
(th)
IN
O
Protection Circuit Operating Input Voltage
Drain-to-Source ON Resistance
Input Current (Output On)
V
(opr)
IN
V
Ω
R
(on)
V =5V, I =1A
IN O
0.3
0.4
0.6
190
9.0
9.0
DS
I
V
IN
=5V
mA
°C
A
IN
Over-Heat Detecting Temperature
Over-Current Detecting Current
Over-Current Limit (Peak)
Tj(sd)
Is
V
IN
=5V, I =1A
O
120
3.0
3.0
10
150
6.0
6.0
V
IN
=5V
I
V
IN
=5V
A
LMT
clamp
Input Clamp Voltage
V
I
IN
=1mA
V
IN,
Notes : 1. Overcurrent protection circuit limits the output current to the range of overcurrent limit value.
2. During overheat protecting operation, output current is turned off.
Ordering Information
Devices
Package
SOIC8
Shipping
memo
TND027SW-TL-2H
2,500pcs./reel
Pb Free and Halogen Free
R
(on) -- V
R
(on) -- Ta
DS
IN
DS
0.5
0.4
0.3
0.2
1.0
0.8
0.6
0.4
0.2
I
=1A
I =1A
O
O
0.1
0
0
0
--50
--25
0
25
50
75
100
IT05233
2
4
6
8
10
12
IT05234
Ambient Temperature, Ta -- °C
Input Voltage, V
-- V
IN
I
-- Ta
I
-- V
IN
IN
IN
0.12
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Ta=25°C
V
=5V
IN
0.10
0.08
0.06
0.04
0.02
0
I
(normal)
IN
0
0
--50
--25
0
25
50
75
100
IT05235
2
4
6
8
10
Ambient Temperature, Ta -- °C
Input Voltage, V
IN
-- V
IT05236
No.7437-2/9
TND027SW
I
S
-- Ta
I
S
-- V
IN
9
8
7
6
5
4
9
8
7
6
5
Ta=25°C
4
3
3
--50
--25
--25
--25
--25
0
25
50
75
100
4
5
6
7
8
9
10
IT05238
IT05237
Input Voltage, V
IN
-- V
Ambient Temperature, Ta -- °C
I
-- Ta
I
-- V
IN
LMT
LMT
9
8
7
6
5
4
12
10
8
Ta=25°C
6
4
2
0
3
--50
0
25
50
75
100
IT05239
4
5
6
7
8
9
10
Ambient Temperature, Ta -- °C
Input Voltage, V
IN
V
-- V
IT05240
V
, clamp -- Ta
, clamp -- Ta
IN
DS
70
13
12
11
10
V
=0V
=1mA
I
=1mA
IN
IN
I
O
68
66
64
62
60
9
8
58
56
--50
0
25
50
75
100
--50
--25
0
25
50
75
100
Ambient Temperature, Ta -- °C
IT05241
Ambient Temperature, Ta -- °C
IT05242
V
(th) -- Ta
IN
I
O
-- V
IN
2.0
1.8
1.6
1.4
1.2
2.0
V
=24V
V
=5V
=1mA
DS
DS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I
O
1.0
0.8
0.2
0
--50
0
25
50
75
100
IT05243
1
2
3
Ambient Temperature, Ta -- °C
Input Voltage, V
IN
-- V
IT05244
No.7437-3/9
TND027SW
Tj(sd) -- V
IN
160
158
156
154
152
150
148
146
144
142
140
4.0
4.5
5.0
5.5
6.0
Input Voltage, V
IN
-- V
IT05245
P (Circuit2) -- P (Circuit1)
P -- Ta
D
D
D
1.4
1.3
1.2
1.8
1.7
1.6
When mounted on ceramic substrate
(1200mm2×0.8mm)
Total Dissipation
1unit
1.4
1.3
1.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.4
0.2
0
0.2
0
0
0.5
1.0
1.3
1.5
--40
--20
0
20
40
60
80
100
IT05248
Allowable Power Dissipation, P (Circuit1) -- W IT05247
Ambient Temperature, Ta -- °C
D
Sample Application Circuit
AC24V
AC100V
Lamp
Lamp
Lamp
OUT 1
IN 1
OUT 2
IN 2
OUT
TND027SW
5V 5V
5V
IN
Micro-
controller
Micro-
controller
Micro-
controller
TND027SW
GND
GND 1, 2
Another Sample Application Circuit (Solenoid drive)
AC24V
AC100V
Solenoid
OUT
Solenoid
OUT 1
OUT 2
IN 2
IN
5V 5V
IN 1
5V
Micro-
controller
Micro-
controller
Micro-
controller
TND027SW
GND
TND027SW
GND 1, 2
No.7437-4/9
TND027SW
Operation Description
•
The output power MOSFET will be turned on when the input voltage exceeds the input threshold voltage (4 to 6V
is recommended), and then the lamp will be turned on by the current flowing to the lamp. Conversely, the output
power MOSFET will be turned off when the input voltage goes below the input threshold voltage, and the lamp
will be turned off.
•
•
The inrush current that occurs during normal lamp operation is limited to a preset value by the built-in overcurrent
protecting circuit, which makes the lamp life longer.
The internal overcurrent protection function limits the current of output power MOSFET when output current of at
least the overcurrent detecting current value flows at load short. Besides, if the device temperature exceeds the
allowable power dissipation, overheat protection function protects the power switch from being broken down by
turning off the current of output power MOSFET when Tj comes to 150°C (typical).
•
As an example of application circuit, DC voltage can also be controlled as a solenoid drive.
Addition
•
The diode between OUT and GND in the block diagram is parasitic diode of the MOSFET.
•
Not apply a voltage on IN terminal during the period when OUT voltage is lower then GND voltage when driving
a solenoid or a motor.
•
Be sure connect a diode between OUT terminal and GND terminal when you want to apply a voltage on IN terminal
under the above-stated state (that is, OUT Voltage < GND Voltage).
No.7437-5/9
TND027SW
Taping Specification
TND027SW-TL-2H
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No.7437-7/9
TND027SW
Outline Drawing
Land Pattern Example
TND027SW-TL-2H
Mass (g) Unit
Unit: mm
0.082
mm
* For reference
0.65
1.27
No.7437-8/9
TND027SW
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
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harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
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PS No.7437-9/9
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