UMA6NT2G [ONSEMI]
UMA6NT2G;
| 型号： | UMA6NT2G |
| 厂家： | 
ONSEMI |
| 描述： | UMA6NT2G |
| 文件： | 总6页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UMA4NT1, UMA6NT1
Preferred Devices
Dual Common Emitter Bias
Resistor Transistors
PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
http://onsemi.com
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the UMC2NT1 series, two
BRT devices are housed in the SOT−353 package which is ideal for
low power surface mount applications where board space is at a
premium.
3
2
1
R1
R1
Q1
Q2
4
5
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MARKING
DIAGRAM
5
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q
A
1
d
Ux
and Q , − minus sign for Q (PNP) omitted)
2
1
SC−88A/SOT−353
CASE 419A
STYLE 7
Rating
Collector-Base Voltage
Symbol
Value
50
Unit
1
2
3
V
CBO
V
CEO
Vdc
Vdc
Ux = Device Marking
Collector-Emitter Voltage
Collector Current
50
x
d
= 0 or 1
= Date Code
I
C
100
mAdc
THERMAL CHARACTERISTICS
ORDERING INFORMATION
Thermal Resistance − Junction-to-Ambient
(surface mounted)
R
833
°C/W
°C
θ
JA
†
Device
Package
SOT−323
SOT−323
Shipping
Operating and Storage Temperature
Range
T , T
J
−65 to
+150
stg
UMA4NT1
UMA6NT1
3000/Tape & Reel
3000/Tape & Reel
Total Package Dissipation
P
*150
mW
D
@ T = 25°C (Note 1.)
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
UMA4NT1
UMA6NT1
U0
U1
10
47
∞
∞
Preferred devices are recommended choices for future use
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
March, 2004 − Rev. 2
UMA4NT1/D
UMA4NT1, UMA6NT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = 50 V, I = 0)
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V = 50 V, I = 0)
CB
B
CEO
Emitter-Base Cutoff Current
(V = 6.0, I = 5.0 mA)
UMA4NT1
UMA6NT1
I
−
−
−
−
0.9
0.2
EBO
EB
C
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I = 10 µA, I = 0)
V
V
50
50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
Collector-Emitter Breakdown Voltage (I = 2.0 mA, I = 0)
C
B
(BR)CEO
DC Current Gain
(V = 10 V, I = 5.0 mA)
UMA4NT1
UMA6NT1
h
FE
160
160
250
250
−
−
CE
C
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
−
−
−
−
−
0.25
0.2
−
Vdc
Vdc
Vdc
kW
C
B
CE(SAT)
Output Voltage (on) (V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
OL
CC
B
L
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kW)
V
OH
4.9
CC
B
L
Input Resistor
UMA4NT1
UMA6NT1
R1
7.0
33
10
47
13
61
250
200
150
100
50
0
R
= 833°C/W
θ
JA
−50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
http://onsemi.com
2
UMA4NT1, UMA6NT1
TYPICAL ELECTRICAL CHARACTERISTICS − UMA4NT1
10
1000
I /I = 10
C
B
25°C
T = 75°C
A
−25°C
100
T = 75°C
1
0.1
A
25°C
−25°C
10
1
V
CE
= 10 V
0.01
0
10
20
30
40
50
60
70
80
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
10
1
12
10
8
f = 1 MHz
= 0 mA
T = 25°C
A
I
E
75°C
T = −25°C
A
6
4
25°C
0.1
2
0
V
O
= 5 V
5
0.01
0
5
10
15
20
25
30
35
40
45
0
1
2
3
4
6
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
IN
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
http://onsemi.com
3
UMA4NT1, UMA6NT1
TYPICAL ELECTRICAL CHARACTERISTICS − UMA6NT1
10
1000
I /I = 10
C
B
T = 75°C
A
25°C
−25°C
1
0.1
−25°C
25°C
T = 75°C
A
100
V
CE
= 10 V
10
0.01
0
10
20
30
40
50
60
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 6. VCE(sat) versus IC
Figure 7. DC Current Gain
100
10
1
12
10
8
75°C
T = −25°C
f = 1 MHz
= 0 mA
T = 25°C
A
I
E
A
25°C
6
4
0.1
0.01
2
0
V
O
= 5 V
0.001
0
5
10
15
20
25
30
35
40
45
0
1
2
3
4
5
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
IN
Figure 8. Output Capacitance
Figure 9. Output Current versus Input Voltage
http://onsemi.com
4
UMA4NT1, UMA6NT1
PACKAGE DIMENSIONS
SC−88A/SOT−353
5−LEAD PACKAGE
CASE 419A−02
ISSUE G
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
G
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5
4
3
−B−
S
INCHES
DIM MIN MAX
MILLIMETERS
1
2
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
M
M
B
0.2 (0.008)
D 5 PL
0.026 BSC
0.65 BSC
−−−
0.004
0.004
0.004
0.010
0.012
−−−
0.10
0.10
0.10
0.25
0.30
N
K
N
S
0.008 REF
0.20 REF
0.079
0.087
2.00
2.20
J
STYLE 7:
PIN 1. BASE
2. EMITTER
C
3. BASE
4. COLLECTOR
5. COLLECTOR
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
UMA4NT1, UMA6NT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
UMA4NT1/D
相关型号：
UMA6NTR
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, UMT5, SC-88A, 5 PIN
ROHM
UMA6TL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MINIMOLD, UM5, 5 PIN
ROHM
UMA6TR
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MINIMOLD, UM5, 5 PIN
ROHM
UMA7.0AE3
Trans Voltage Suppressor Diode, 500W, 7V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, ULTRAMITE, 2 PIN
MICROSEMI
UMA7.0CAE3
Trans Voltage Suppressor Diode, 500W, 7V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, ULTRAMITE, 2 PIN
MICROSEMI
UMA7.5AE3
Trans Voltage Suppressor Diode, 500W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, ULTRAMITE, 2 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明