US2KA [ONSEMI]
超快速表面贴装整流器;型号: | US2KA |
厂家: | ONSEMI |
描述: | 超快速表面贴装整流器 |
文件: | 总5页 (文件大小:244K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Super Fast Surface Mount
Rectifiers
US2AA-US2MAꢀ
Features
• Glass Passivated Chip Junction
• High Surge Capacity
• Low Forward Voltage Drop
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• Fast Switching with Reverse Recovery Time: 50∼75 ns Maximum
• UL Flammability 94 V − 0 Classification
• MSL 1 per J−STD−020
1
2
Cathode
Anode
• RoHS Compliant / Green Molding Compound
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
1
2
Table 1. ORDERING INFORMATION
Packing
SMA/DO−214AC
COLOR BAND DENOTES CATHODE
Method
Part Number
Top Mark
Package
US2AA,
NRVUS2AA*
US2AA
DO−214AC (SMA)
Tape and Reel
MARKING DIAGRAM
US2BA,
US2BA
US2DA
US2FA
US2GA
US2JA
US2KA
US2MA
DO−214AC (SMA)
DO−214AC (SMA)
DO−214AC (SMA)
DO−214AC (SMA)
DO−214AC (SMA)
DO−214AC (SMA)
DO−214AC (SMA)
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
NRVUS2BA*
US2DA,
NRVUS2DA*
$Y&Z&3
US2XA
US2FA,
NRVUS2FA*
US2GA,
NRVUS2GA*
$Y
&Z
&3
US2XA
X
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Specific Device Code
= A/B/D/F/G/J/K/M
US2JA,
NRVUS2JA*
US2KA,
NRVUS2KA*
US2MA,
NRVUS2MA*
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
February, 2021 − Rev. 4
US2AA/D
US2AA−US2MA
Table 2. ABSOLUTE MAXIMUM RATINGS
US2
AA
US2
BA
US2
DA
US2
FA
US2
GA
US2
JA
US2
KA
US2
MA
Symbol
Parameter
Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Unit
V
V
V
50
35
50
100
70
200
140
200
300
210
300
400
280
400
600
420
600
800
560
800
1000
700
RRM
V
RMS
V
DC
DC Blocking Voltage
100
1000
V
I
Average Forward Rectified Current
1.5
50
A
F(AV)
I
Peak Forward Surge Current,
8.3 ms Single Half−Sine Wave,
Superimposed on Rated Load
A
FSM
T
Operating Junction Temperature Range
Storage Temperature Range
−55 to +150
−55 to +150
°C
°C
J
T
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 3. THERMAL CHARACTERISTICS (NOTE 1) (Values are at T = 25°C unless otherwise noted)
A
Symbol
Parameter
Value
189
31
Unit
°C/W
°C/W
R
Typical Thermal Resistance, Junction−to−Ambient
q
JA
Y
JL
Typical Thermal Characteristics, Junction−to−Lead (with Reference to Cathode Pin)
1. Device mounted at minimum pad.
Table 4. ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted)
A
Value
US2 US2 US2 US2 US2 US2 US2
US2
MA
AA
BA
DA
FA
GA
JA
KA
Symbol
Parameter
Unit
V
F
Maximum Instantaneous Forward Voltage (Note2)
1.0
1.3
1.7
V
at Rated I
F(AV)
I
R
Maximum Re-
verse Current
TJ = 25°C
5
mA
TJ = 125°C
100
at Rated V
R
t
Maximum Reverse Recovery Time (Note 3)
Typical Junction Capacitance (Note 4)
50
50
75
30
ns
rr
C
pF
J
2. Pulse test with PW = 300 ms, 1% duty cycle
3. Reverse recovery test conditions: I = 0.5 A, I = 1.0 A, I = 0.25 A
F
R
RR
4. Measured at 1 Mhz and applied reverse voltage of 4.0 V D.C.
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2
US2AA−US2MA
TYPICAL PERFORMANCE CHARACTERISTICS
TJ=125
RESISTIVE OR
INDUCTIVE LOAD
TJ=25
LEAD TEMPERATURE (oC)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Figure 1. Forward Current Derating Curve
Figure 2. Typical Reverse Characteristics
8.3ms Single Half Sine Wave
US2AA−US2FA
US2GA
US2JA−US2MA
NUMBER OF CYCLES AT 60 Hz
FORWARD VOLTAGE (V)
Figure 3. Maximum Non−Repetitive Forward
Figure 4. Typical Forward Characteristics
Surge Current
f=1.0MHz
Vslg=50mVp−p
US2AA−US2GA
US2JA−US2MA
REVERSE VOLTAGE (V)
Figure 5. Typical Forward Characteristics
Figure 6. Typical Forward Characteristics
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMA
CASE 403AE
ISSUE O
DATE 31 AUG 2016
5.60
4.80
M
B
B
0.13
B
C
B
A
2.65
2.95
2.50
1.65
1.20
1.75
4.30
4.75
4.00
B
A
LAND PATTERN RECOMMENDATION
TOP VIEW
2.50 MAX
A
2.20
1.90
NOTES:
A. EXCEPT WHERE NOTED, CONFORMS
TO JEDEC DO214 VARIATION AC.
0.30
0.05
B
DOES NOT COMPLY JEDEC STANDARD
VALUE.
0.203
0.050
B
C
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH AND TIE BAR
PROTRUSIONS.
E. DIMENSIONS AND TOLERANCE AS
PER ASME Y14.5−2009.
E. LAND PATTERN STD. DIOM5025X231M
2.05
1.95
M
0.13
C
B
A
SIDE VIEW
8 °
0 °
R0.15 4X
GAGE PLANE
0.45
0.41
0.15
1.52
0.75
8 °
0 °
DETAIL A
SCALE 20 : 1
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13440G
SMA
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
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