RS7213-33NLNSCP
更新时间：2024-09-18 12:25:44
品牌：ORISTER
描述：300mA High Speed, Low Noise LDO with Fast Enable and Fast Discharge Function
概述
数据手册RS7213-33NLNSCP 概述
300mA High Speed, Low Noise LDO with Fast Enable and Fast Discharge Function 300毫安高速，低噪声LDO具有快速启动和快速放电功能
RS7213-33NLNSCP 数据手册
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PDF下载Page No. : 1/9
RS7213
300mA High Speed, Low Noise LDO with Fast Enable and Fast Discharge Function
General Description
The RS7213 series is a low‐dropout linear regulator with ON/OFF control that operates in the input voltage range from
+1.8V to +5.5V and delivers 300mA output current.
The fixed output voltage is preset at an internally trimmed voltage 1.8V, 2.5V, or 3.3V. Other options 1.0V, 1.2V, 1.5V, 2.2V,
3.0V and 3.6V are available by special order only.
The RS7213 consists of a 0.87V bandgap reference, an error amplifier, and a P‐channel pass transistor. Other features
include short‐circuit protection, thermal shutdown protection, fast respond and fast discharge functions. The RS7213 series
devices are available in SOT‐25 & SC‐70‐5 packages.
Features
Applications
● Operating Voltage Range：+1.8V to +5.5V
● Output Voltages：+0.9V to +5.0V (0.1V Step)
● Dropout Voltage：90mV@100mA (Typ.)
● Fast Response in Power‐on Transient：35μS (Typ.)
● Low Current Consumption：30μA (Typ.)
● Shutdown Current：0.7μA (Typ.)
● ±2% Output Voltage Accuracy (special ±1%highly
accurate), VOUT≧1.8V
● Low ESR Capacitor Compatible
● High Ripple Rejection：70dB (Typ.)
● Output Current Limit Protection：500mA (Typ.)
● Short Circuit Protection：70mA (Typ.)
● Thermal Overload Shutdown Protection
● Control Output ON/OFF Function
● Battery‐powered equipment
● Voltage regulator for microprocessor
● Voltage regulator for LAN cards
● Wireless Communication equipment
● Audio/Video equipment
● Post Regulator for Switching Power
● Home Electric/Electronic Appliance
● CDMA/GSM Cellular Handsets
● Laptop, Palmtops, Notebook Computers
● Portable Information Application
● SOT‐25 & SC‐70‐5 Packages
● RoHS Compliant and 100% Lead (Pb)‐Freeand Green
(Halogen Free with Commercial Standard)
Application Circuits
This integrated circuit can be damaged by ESD. Orister Corporation recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
DS‐RS7213‐02 September, 2009
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Page No. : 2/9
Pin Assignment
SOT‐25
SC‐70‐5
PACKAGE
PIN
1
2
3
4
SYMBOL
VIN
GND
EN
DESCRIPTION
Regulator Input Pin
Ground Pin
Chip Enable Pin
No Connection
SOT‐25
NC
5
VOUT
Regulator Output Pin
PACKAGE
PIN
1
2
3
4
SYMBOL
VIN
GND
EN
DESCRIPTION
Regulator Input Pin
Ground Pin
Chip Enable Pin
No Connection
SC‐70‐5
NC
5
VOUT
Regulator Output Pin
Ordering Information
DEVICE
DEVICE CODE
XX is nominal output voltage (for example, 18 = 1.8V, 33 = 3.3V, 285 = 2.85V).
EEE is CE Input Logic & Discharge Function Selection : (see CE & Discharge Function Selection
Table)
YY is package designator :
NE : SOT‐25
RS7213‐XX EEE YY Z
SC : SC‐70‐5
Z is Lead Free designator :
P: Commercial Standard, Lead (Pb) Free and Phosphorous (P) Free Package
G: Green (Halogen Free with Commercial Standard)
CE & Discharge Function Selection Table
EEE
CODE
NHF
NLF
NHN
NLN
UHF
ULF
EN Type
EEE
CODE
UHN
ULN
DHF
DLF
EN Type
Discharge
Discharge
Type 1
None
None
None
None
Type 2
Type 1
Pull High
Pull High
Pull Low
Pull Low
Pull Low
Pull Low
Type 2
High Active
Low Active
High Active
Low Active
High Active
Low Active
Fast
Fast
Normal
Normal
Fast
High Active
Low Active
High Active
Low Active
High Active
Low Active
Normal
Normal
Fast
Fast
Normal
Normal
Pull High
Pull High
DHN
DLN
Fast
DS‐RS7213‐02 September, 2009
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Block Diagram
Absolute Maximum Ratings
Parameter
Symbol
VIN
ILIMIT
TJ
Ratings
6.0
0.5
Units
V
Input Voltage VIN to GND
Output Current Limit, I(LIMIT)
Junction Temperature
A
+155
oC
SOT‐25
SC‐70‐5
SOT‐25
SC‐70‐5
250
333
400
200
Thermal Resistance
oC/W
θJA
Power Dissipation
PD
mW
Operating Ambient Temperature
Storage Temperature
Lead Temperature (soldering, 10sec)
NOTES：
TOPR
TSTG
‐
‐40 ~ +125
‐55~+150
+260
oC
oC
oC
1
The power dissipation values are based on the condition that junction temperature TJ and ambient temperature TA difference is
100°C.
2
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress
ratings only, and function operation of the device at these or any other conditions beyond those indicated under “recommended
operating conditions” is not implied. Exposure to absolute‐maximum –rated conditions for extended periods may affect device
reliability.
DS‐RS7213‐02 September, 2009
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Page No. : 4/9
Electrical Characteristics (VIN=5V, TA=25°C, unless otherwise specified)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VIN
Input Voltage
‐
1.8
‐
5.5
V
VIN=VOUT+1.0V, IOUT=1mA,
VOUT≧1.8V
VIN=VOUT+1.0V, IOUT=1mA,
‐2%
‐35
+2%
+35
V
VOUT
Output Voltage
VOUT
mV
V
OUT＜1.8V, VIN＞2.4V
VOUT+1.0V≦VIN≦5.5V, VIN≧2.4V
OUT=300mA, VOUT＞2.0V
IMAX
VDROP
ΔVLINE
ΔVLOAD
IQ
ISD
ISC
PSRR
eN
Output Current (see NOTE 1)
Dropout Voltage
300
‐
‐
‐
‐
‐
‐
‐
‐
1.6
‐
‐
‐
‐
300
0.2
0.01
30
0.7
70
70
40
‐
‐
500
0.3
0.02
50
1.0
‐
‐
‐
‐
mA
mV
%/V
%/mA
uA
uA
mA
dB
uV(rms)
V
I
Line Regulation
Load Regulation
Ground Pin Current
Shutdown Current
Short Circuit Current
Ripple Rejection
VOUT+1.0V≦VIN≦5.5V, IOUT=1mA
VIN=VOUT+1V, 1mA≦IOUT≦100mA
ILOAD=0mA to 300mA, VIN=VOUT+1V
VIN=VOUT+1V, EN=0V, No Load
‐
IOUT=30mA, F=1KHz, COUT=1uF
IOUT=100mA , F=1KHz, COUT=1uF
VIN≦5.0V
Output Noise
VIH
VIL
RDIS
TDIS
EN Pin Input Voltage “H”
EN Pin Input Voltage “L”
Discharge Resistor
Discharge Time
VIN≦5.0V
VEN=0V
VOUT=3.3V to 0V, COUT=1uF
‐
30
70
0.3
100
100
V
Ω
us
ppm/
TC
Temperature Characteristics
IOUT=1mA, ‐25°C≦TOPR≦+85°C
‐
±100
‐
oC
TSD
THYS
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
‐
‐
‐
‐
150
30
‐
‐
oC
oC
NOTES：
1
Measured using a double sided board with 1” x 2” square inches of copper area connected to the GND pins for “heat spreading”.
DS‐RS7213‐02 September, 2009
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Detail Description
The RS7213 is a low‐dropout linear regulator. The device provides preset 1.8V, 2.5V and 3.3V output voltages for output
current up to 300mA. Other mask options for special output voltages are also available. As illustrated in function block
diagram, it consists of a 0.87V bandgap reference, an error amplifier, a P‐channel pass transistor and an internal feedback
voltage divider.
The bandgap reference for is connected to the error amplifier, which compares this reference with the feedback voltage and
amplifies the voltage difference. If the feedback voltage is lower than the reference voltage, the pass transistor’s gate is
pulled lower, which allows more current to pass to the output pin and increases the output voltage. If the feedback voltage is
too high, the pass transistor’s gate is pulled up to decrease the output voltage.
The output voltage is feed back through an internal resistor divider connected to VOUT pin. Additional blocks include an
output current limiter, thermal sensor, and shutdown logic.
Internal P‐channel Pass Transistor
The RS7213 features a P‐channel MOSFET pass transistor. Unlike similar designs using PNP pass transistors, P‐channel
MOSFETs require no base drive, which reduces quiescent current. PNP‐based regulators also waste considerable current in
dropout when the pass transistor saturates, and use high base‐drive currents under large loads. The RS7213 does not suffer
from these problems and consumes only 30μA (Typ.) of current consumption under heavy loads as well as in dropout
conditions.
Enable Function
EN pin starts and stops the regulator. When the EN pin is switched to the power off level, the operation of all internal circuit
stops, the build‐in P‐channel MOSFET output transistor between pins VIN and VOUT is switched off, allowing current
consumption to be drastically reduced. The VOUT pin enters the GND level through the internal discharge path between VOUT
and GND pins.
Operating Region and Power Dissipation
Maximum power dissipation of the RS7213 depends on the thermal resistance of the case and circuit board, the temperature
difference between the die junction and ambient air, and the rate of airflow. The power dissipation across the devices is P =
IOUT x (VIN‐VOUT). The resulting maximum power dissipation is:
(T
J
− T
A
)
(T
J
− T )
JA
A
PMAX
=
=
θ
JC + θCA
θ
Where (TJ‐TA) is the temperature difference between the RS7213 die junction and the surrounding air, θJC is the thermal
resistance of the package chosen, and θCA is the thermal resistance through the printed circuit board, copper traces and
other materials to the surrounding air. For better heat‐sinking, the copper area should be equally shared between the VIN,
VOUT, and GND pins.
The thermal resistance θJA of SOT‐25 package of RS7213 is 250°C/W. Based on a maximum operating junction temperature
125°C with an ambient of 25°C, the maximum power dissipation will be:
(T
J
− T
A
)
(125 − 25)
PMAX
=
=
= 0.40W
θ
JC + θCA
250
Thermal characteristics were measured using a double sided board with 1”x2” square inches of copper area connected to the
GND pin for “heat spreading”.
Dropout Voltage
A regulator’s minimum input‐output voltage differential, or dropout voltage, determines the lowest usable supply voltage. In
battery‐powered systems, this will determine the useful end‐of‐life battery voltage. The RS7213 use a P‐ channel MOSFET
pass transistor, its dropout voltage is a function of drain‐to‐source on‐resistance RDS(ON) multiplied by the load current.
VDROPOUT = VIN − VOUT = RDS(ON) ×IOUT
DS‐RS7213‐02 September, 2009
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Page No. : 6/9
SOT‐25 Dimension
NOTES:
A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion.
D. Falls within JEDEC MO‐193 variation AB (5 pin).
DS‐RS7213‐02 September, 2009
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Page No. : 7/9
SC‐70‐5 Dimension
NOTES:
A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion. Mold flash and protrusion shall not exceed 0.15 per side.
D. Falls within JEDEC MO‐203 variation AA.
DS‐RS7213‐02 September, 2009
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Page No. : 8/9
Soldering Methods for Orister’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface‐mount devices
Figure 1: Temperature profile
t
P
Critical Zone
to T
TP
T
L
P
Ramp-up
TL
t
L
Tsmax
Tsmin
t
S
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp‐up rate (TL to TP)
Preheat
Sn‐Pb Eutectic Assembly
Pb‐Free Assembly
<3oC/sec
<3oC/sec
‐ Temperature Min (Tsmin
)
100oC
150oC
150oC
200oC
‐ Temperature Max (Tsmax
‐ Time (min to max) (ts)
Tsmax to TL
)
60~120 sec
60~180 sec
‐ Ramp‐up Rate
<3oC/sec
<3oC/sec
Time maintained above:
‐ Temperature (TL)
‐ Time (tL)
183oC
217oC
60~150 sec
240oC +0/‐5oC
60~150 sec
260oC +0/‐5oC
Peak Temperature (TP)
Time within 5oC of actual Peak
10~30 sec
20~40 sec
Temperature (tP)
Ramp‐down Rate
Time 25oC to Peak Temperature
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Peak temperature
245oC ±5oC
260oC +0/‐5oC
Dipping time
5sec ±1sec
5sec ±1sec
Pb‐Free devices.
DS‐RS7213‐02 September, 2009
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Page No. : 9/9
Important Notice:
© Orister Corporation
Orister cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an Orister product.
No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied.
Orister reserves the right to make changes to their products or specifications or to discontinue any product or service
without notice. Except as provided in Orister’s terms and conditions of sale, Orister assumes no liability whatsoever, and
Orister disclaims any express or implied warranty relating to the sale and/or use of Orister products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. In order to minimize risks associated with the customer’s applications, adequate design and
operating safeguards must be provided by the customer to minimize inherent or procedural hazards. Testing and other
quality control techniques are utilized to the extent Orister deems necessary to support this warranty. Specific testing of
all parameters of each device is not necessarily performed.
Orister and the Orister logo are trademarks of Orister Corporation. All other brand and product names appearing in this
document are registered trademarks or trademarks of their respective holders.
DS‐RS7213‐02 September, 2009
www.Orister.com
RS7213-33NLNSCP 相关器件
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| RS7213-33UHNSCP | ORISTER | 300mA High Speed, Low Noise LDO with Fast Enable and Fast Discharge Function | 获取价格 |
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| RS7213-33ULFNEG | ORISTER | 300mA High Speed, Low Noise LDO with Fast Enable and Fast Discharge Function | 获取价格 |
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