KOM2125 [OSRAM]
2fach-Silizium-PIN Fotodiode in SMT; 2fach - Silizium -PIN Fotodiode在SMT
| 型号： | KOM2125 |
| 厂家： | 
OSRAM GMBH |
| 描述： | 2fach-Silizium-PIN Fotodiode in SMT |
| 文件： | 总5页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2fach-Silizium-PIN Fotodiode in SMT
2-Chip Silicon PIN Photodiode in SMT
KOM 2125
KOM 2125 FA
KOM 2125
KOM 2125 FA
Wesentliche Merkmale
Features
• Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm und bei 880 nm
(KOM 2125 FA)
• Especially suitable for applications from
400 nm to 1100 nm and of 880 nm
(KOM 2125 FA)
• Kurze Schaltzeit (typ. 25 ns)
• geeignet für Vapor-Phase Löten und
IR-Reflow-Löten
• Short switching time (typ. 25 ns)
• Suitable for vapor-phase and IR-reflow
soldering
• SMT-fähig
• Suitable for SMT
Anwendungen
Applications
• Nachlaufsteuerungen
• Kantenführung
• Follow-up controls
• Edge drives
• Industrieelektronik
• „Messen/Steuern/Regeln“
• Industrial electronics
• For control and drive circuits
Typ
Type
Bestellnummer
Ordering Code
KOM 2125
Q62702-K0047
Q62702-P5313
KOM 2125 FA
2001-02-21
1
KOM 2125, KOM 2125 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Top; Tstg
– 40 … + 80
°C
Operating and storage temperature range
Sperrspannung
Reverse voltage
VR
60
V
Verlustleistung, TA = 25 °C
Ptot
150
mW
Total power dissipation
Kennwerte (TA = 25 °C)
Characteristics (TA = 25 °C)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
KOM 2125
KOM 2125 FA
Fotostrom
Photocurrent
VR = 5 V, Normlicht/standard light A Diode A IP
40 (> 30)
100 (> 75)
–
–
–
–
µA
µA
T = 2856 K, Ev = 1000 Ix
Diode B
VR = 5 V, λ = 870 nm,Ee = 1mW/cm2 Diode A IP
26 (> 20)
70 (> 50)
Diode B
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λS max
850
900
nm
nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
λ
400 … 1100 750 ... 1100
Spectral range of sensitivity
S = 10% of Smax
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Diode A
Diode B
4
10
4
10
mm2
A
Abmessung der
bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area Diode B L × W
Diode A L × B
2 × 2
2 × 5
2 × 2
2 × 5
mm × mm
mm × mm
Abstand Chipoberfläche zu Vergußoberfläche
0.3
0.3
mm
H
Distance chip front to case seal
Halbwinkel
Half angle
ϕ
± 60
± 60
Grad
deg.
Dunkelstrom, VR = 10 V
Diode A IR
5 (≤ 30)
5 (≤ 30)
nA
Dark current
Diode B
10 (≤ 30)
10 (≤ 30)
2001-02-21
2
KOM 2125, KOM 2125 FA
Kennwerte (TA = 25 °C)
Characteristics (TA = 25 °C) (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
KOM 2125
KOM 2125 FA
Leerlaufspannung
Open-circuit voltage
Ev = 1000 Ix, Normlicht/standard light A
VO
VO
350 (> 300)
–
–
mV
mV
Ee = 1 mW/cm2, λ = 850 nm
350 (> 300)
Kurzschlussstrom
Short-circuit current
Normlicht/standard light A
T = 2856 K, Ev = 1000 Ix
λ = 870 nm, Ee = 1 mW/cm2
Diode A ISC
Diode B
Diode A ISC
Diode B
38
95
–
–
–
24
66
µA
µA
–
Anstiegszeit/Abfallzeit
Rise and fall time
Diode A tr, tf
Diode B
18
25
18
25
ns
RL = 50 Ω; VR = 5 V;
λ = 850 nm; IP = 800 µA
Durchlassspannung, IF = 100 mA; E = 0
VF
1.0
1.0
V
Forward voltage
Kapazität
Diode A C0
40
40
pF
Capacitance
Diode B
100
100
VR = 0 V; f = 1 MHz; E = 0
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV
– 2.6
– 2.6
mV/K
%/K
Temperaturkoeffizient von IP
Temperature coefficient of IP
Normlicht/standard light A
λ = 850 nm
TCI
0.18
–
–
0.2
Rauschäquivalente
Strahlungsleistung
Noise equivalent power
VR = 10 V
Diode A NEP
Diode B
6.4 × 10– 14
9.1 × 10– 14
6.4 × 10– 14
9.1 × 10– 14
W
-----------
Hz
Nachweisgrenze, VR = 10 V
Detection limit
Diode A D*
Diode B
3.1 × 1012
3.5 × 1012
3.1 × 1012
3.5 × 1012
cm × Hz
--------------------------
W
2001-02-21
3
KOM 2125, KOM 2125 FA
Relative Spectral Sensitivity
KOM 2125, Srel = f (λ)
Relative Spectral Sensitivity
Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit Voltage VO = f (Ev)
KOM 2125 FA, Srel = f (λ)
OHF01430
100
Srel
%
80
70
60
50
40
30
20
10
0
400
600
800
1000 nm 1200
λ
Dark Current, IR = f (VR), E = 0
normalized to 10 V/25 °C
Capacitance
C = f (VR), f = 1 MHz, E = 0
Dark Current IR = f (TA), VR = 10 V,
E = 0, normalized to TA = 25 °C
Directional Characteristics
Total Power Dissipation
S
rel = f (ϕ)
Ptot = f (TA)
40
30
20
10
0
OHF01402
ϕ
1.0
50
0.8
0.6
0.4
60
70
0.2
0
80
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2001-02-21
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KOM 2125, KOM 2125 FA
Maßzeichnung
Package Outlines
Photosensitive area
A = 2 (0.079) x 2 (0.079)
B = 5 (0.197) x 2 (0.079)
0.9 (0.035)
Chip position
0.7 (0.028)
5.2 (0.205)
0...0.1 (0...0.004)
0.3 (0.012)
5.0 (0.197)
2
3
A
B
Active area
1
8.5 (0.335)
1.2 (0.047)
1.1 (0.043)
Cathode
8.2 (0.323)
GEOY6860
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
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Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2001-02-21
5
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