Q62703Q0148 [OSRAM]

IR-Lumineszenzdiode Infrared Emitter; IR- Lumineszenzdiode红外发射器
Q62703Q0148
型号: Q62703Q0148
厂家: OSRAM GMBH    OSRAM GMBH
描述:

IR-Lumineszenzdiode Infrared Emitter
IR- Lumineszenzdiode红外发射器

文件: 总8页 (文件大小:143K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IR-Lumineszenzdiode  
Infrared Emitter  
Lead (Pb) Free Product - RoHS Compliant  
LD 271  
LD 271 H  
LD 271 L  
LD 271 LH  
Wesentliche Merkmale  
Features  
• GaAs-LED in 5mm radial-Gehäuse  
• Typische Peakwellenlänge 950nm  
• Hohe Zuverlässigkeit  
• GaAs-LED in 5mm radial package (T 1 3/4)  
• Typical peak wavelength 950nm  
• High reliability  
• Mit verschiedenen Beinchenlängen lieferbar  
• Variante mit “stand-off” lieferbar  
• TTW Löten geeignet  
• Available with two different lead lengths  
• Version with stand-off available  
• Suitable for TTW soldering  
Anwendungen  
Applications  
• IR-Fernsteuerung von Fernseh- und  
Rundfunkgeräten, Videorecordern,  
Lichtdimmern  
• Gerätefernsteuerungen für Gleich- und  
Wechsellichtbetrieb  
• IR remote control of hi-fi and TV-sets, video  
tape recorders, dimmers  
• Remote control for steady and varying intensity  
• Sensor technology  
• Discrete interrupters  
• Sensorik  
• Diskrete Lichtschranken  
Typ  
Type  
Bestellnummer  
Ordering Code  
Strahlstärkegruppierung 1) (IF = 100mA, tp = 20 ms)  
Radiant intensity grouping 1)  
Ie (mW/sr)  
LD 271  
Q62703Q0148  
Q62703Q0833  
Q62703Q0256  
Q62703Q0838  
15 (>10)  
LD 271 L  
LD 271 H  
LD 271 LH  
>16  
1) gemessen bei einem Raumwinkel Ω = 0.01 sr  
measured at a solid angle of Ω = 0.01 sr  
2007-04-04  
1
LD 271, LD 271 H, LD 271 L, LD 271 LH  
Grenzwerte  
Maximum Ratings  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Betriebs- und Lagertemperatur  
Top; Tstg  
– 40 + 100  
°C  
Operating and storage temperature range  
Sperrspannung  
Reverse voltage  
VR  
5
V
Durchlaßstrom  
Forward current  
IF  
130  
3.5  
220  
330  
mA  
A
Stoßstrom, tp = 10 μs, D = 0  
Surge current  
IFSM  
Ptot  
Verlustleistung  
Power dissipation  
mW  
K/W  
Wärmewiderstand  
Thermal resistance  
RthJA  
Kennwerte (TA = 25 °C)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Wellenlänge der Strahlung  
Wavelength at peak emission  
IF = 100 mA, tp = 20 ms  
λpeak  
950  
nm  
Spektrale Bandbreite bei 50% von Imax  
Spectral bandwidth at 50% of Imax  
IF = 100 mA  
Δλ  
55  
nm  
Abstrahlwinkel  
Half angle  
ϕ
± 25  
Grad  
deg.  
Aktive Chipfläche  
Active chip area  
0.25  
mm2  
mm²  
mm  
μs  
A
Abmessungen der aktiven Chipfläche  
Dimensions of the active chip area  
L × B  
L × W  
0.5 × 0.5  
4.0 4.6  
1
Abstand Chipoberfläche bis Linsenscheitel  
Distance chip front to lens top  
H
Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf  
auf 10%, bei IF = 100 mA, RL = 50 Ω  
Switching times, Ie from 10% to 90% and from  
90% to 10%, IF = 100 mA, RL = 50 Ω  
2007-04-04  
2
LD 271, LD 271 H, LD 271 L, LD 271 LH  
Kennwerte (TA = 25 °C)  
Characteristics (cont’d)  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Kapazität, VR = 0 V, f = 1 MHz  
Co  
40  
pF  
Capacitance  
Durchlaßspannung  
Forward voltage  
IF = 100 mA, tp = 20 ms  
IF = 1 A, tp = 100 μs  
VF  
VF  
1.30 (1.5)  
1.90 (2.5)  
V
V
Sperrstrom, VR = 5 V  
IR  
0.01 (1)  
μA  
Reverse current  
Gesamtstrahlungsfluß  
Total radiant flux  
Φe  
18  
mW  
IF = 100 mA, tp = 20 ms  
Temperaturkoeffizient von Ie bzw. Φe,  
IF = 100 mA  
TCI  
– 0.55  
%/K  
Temperature coefficient of Ie or Φe,  
IF = 100 mA  
Temperaturkoeffizient von VF, IF = 100 mA  
Temperature coefficient of VF, IF = 100 mA  
TCV  
TCλ  
– 1.5  
0.3  
mV/K  
nm/K  
Temperaturkoeffizient von λ, IF = 100 mA  
Temperature coefficient of λ, IF = 100 mA  
Gruppierung der Strahlstärke Ie in Achsrichtung  
gemessen bei einem Raumwinkel Ω = 0.01 sr  
Grouping of Radiant Intensity Ie in Axial Direction  
at a solid angle of Ω = 0.01 sr  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
LD 271  
LD 271 H  
LD 271 L  
LD 271 LH  
Strahlstärke  
Radiant intensity  
IF = 100 mA, tp = 20 ms  
IF = 1 A, tp = 100 μs  
Ie  
Ie typ.  
15 (> 10)  
120  
> 16  
mW/sr  
mW/sr  
2007-04-04  
3
LD 271, LD 271 H, LD 271 L, LD 271 LH  
Ιe  
= f (IF)  
Relative Spectral emission  
Irel = f (λ)  
Radiant Intensity  
Max. Permissible Forward Current  
IF = f (TA)  
Ιe 100 mA  
Single pulse, tp = 20 μs  
OHO00364  
OHRD1938  
OHR01038  
10 2  
200  
100  
%
Ιe  
Ι F  
mA  
Ιe (100 mA)  
Ι rel  
160  
140  
120  
100  
80  
80  
10 1  
60  
40  
20  
0
10 0  
60  
40  
20  
10 -1  
0
10 -2  
10 -1  
10 0  
A
10 1  
880  
920  
960  
1000  
nm  
1060  
0
20  
40  
60  
80  
TA  
C 100  
λ
Ι F  
Forward Current  
Permissible Pulse Handling  
IF = f (VF), single pulse, tp = 20 μs  
Capability IF = f (τ), TC = 25 °C,  
duty cycle D = parameter  
OHR00257  
10 4  
OHR01041  
10 1  
mA  
t p  
A
Ι F  
Ι F  
t p  
T
ΙF  
D =  
5
T
typ.  
max.  
10 0  
10 -1  
10 -2  
D =  
0.05  
0.1  
0.005  
0.01  
0.02  
10 3  
5
0.2  
0.5  
DC  
10 2  
10 -5 10 -4 10 -3 10 -2 10 -1 10 0  
s
10 2  
1
1.5  
2
2.5  
3
3.5  
4
VF  
V 4.5  
t P  
Radiation Characteristics Irel = f (ϕ)  
40  
30  
20  
10  
0
OHR01879  
1.0  
0.8  
0.6  
0.4  
0.2  
0
50  
60  
70  
80  
90  
100  
1.0  
0.8  
0.6  
0.4  
0
20  
40  
60  
80  
100  
120  
2007-04-04  
4
LD 271, LD 271 H, LD 271 L, LD 271 LH  
Maßzeichnung  
Package Outlines  
9.0 (0.354)  
8.2 (0.323)  
LD 271 / LD 271 H  
7.8 (0.307)  
7.5 (0.295)  
5.9 (0.232)  
5.5 (0.217)  
Area not flat  
0.6 (0.024)  
0.4 (0.016)  
4.8 (0.189)  
1.8 (0.071)  
1.2 (0.047)  
0.6 (0.024)  
0.4 (0.016)  
Cathode  
4.2 (0.165)  
25.2 (0.992)  
24.2 (0.953)  
11.6 (0.457)  
11.2 (0.441)  
Chip position  
GEXY6239  
LD 271 L / LD 271 LH  
Cathode  
29 (1.142)  
9.0 (0.354)  
27 (1.063)  
8.2 (0.323)  
7.8 (0.307)  
1.8 (0.071)  
1.2 (0.047)  
7.5 (0.295)  
5.9 (0.232)  
5.5 (0.217)  
0.6 (0.024)  
0.4 (0.016)  
Area not flat  
Chip position  
4.8 (0.189)  
4.2 (0.165)  
GEOY6645  
Maße in mm (inch) / Dimensions in mm (inch).  
Gehäusefarbe: grau  
Brechungsindex Verguss: 1.53  
Package Colour: grey  
Refractive index resin: 1.53  
2007-04-04  
5
LD 271, LD 271 H, LD 271 L, LD 271 LH  
Lötbedingungen  
Soldering Conditions  
Wellenlöten (TTW)  
TTW Soldering  
(nach CECC 00802)  
(acc. to CECC 00802)  
OHLY0598  
300  
C
10 s  
Normalkurve  
standard curve  
250  
200  
150  
100  
50  
T
235 C ... 260 C  
Grenzkurven  
limit curves  
2. Welle  
2. wave  
1. Welle  
1. wave  
ca 200 K/s  
2 K/s  
5 K/s  
100 C ... 130 C  
Zwangskühlung  
2 K/s  
forced cooling  
0
0
50  
100  
150  
200  
s
250  
t
Empfohlenes Lötpaddesign Wellenlöten (TTW)  
Recommended Solder Pad  
TTW Soldering  
4 (0.157)  
OHLPY985  
Maße in mm (inch) / Dimensions in mm (inch).  
2007-04-04  
6
LD 271, LD 271 H, LD 271 L, LD 271 LH  
Published by  
OSRAM Opto Semiconductors GmbH  
Wernerwerkstrasse 2, D-93049 Regensburg  
www.osram-os.com  
© All Rights Reserved.  
The information describes the type of component and shall not be considered as assured characteristics. All typical data  
and graphs are basing on sample base, but don't represent the production range. If required, e.g. because of technical  
improvements, the typ. data will be changed without any further notice.  
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain  
dangerous substances. For information on the types in question please contact our Sales Organization.  
Packing  
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.  
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing  
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs  
incurred.  
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical  
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.  
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected  
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.  
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain  
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.  
2007-04-04  
7
Mouser Electronics  
Related Product Links  
720-LD271L-H - Osram Opto Semiconductor LD 271 LH  

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