SFH-4860 [OSRAM]
GaAlAs Light Emitting Diode;
| 型号： | SFH-4860 |
| 厂家： | 
OSRAM GMBH |
| 描述： | GaAlAs Light Emitting Diode |
| 文件： | 总9页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2015-12-23
GaAlAs Light Emitting Diode (660 nm)
Version 1.3
SFH 4860
Features:
•
•
•
•
•
Fabricated in a liquid phase epitaxy process
Cathode is electrically connected to the case
High reliability
Spectral match with silicon photodetectors
Hermetically sealed package
Applications
•
•
•
•
Photointerrupters
IR remote control
Sensor technology
Light curtains
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which
can be hazardous to the human eye. Products which incorporate these devices have to follow the safety
precautions given in IEC 60825-1 and IEC 62471.
Ordering Information
Type:
Radiant Intensity
Ie [mW/sr]
Ordering Code
IF = 50 mA, tp = 20 ms
1.3 (≥ 0.63)
SFH 4860
Q62702P5053
Note:
18 A3 DIN 870 (TO-18), flat glass cap, lead spacing 2.54 mm (1/10’’) anode making: projection at package
bottom
2015-12-23
1
Version 1.3
SFH 4860
Maximum Ratings (TA = 25 °C)
Parameter
Symbol
Top; Tstg
Tj
Values
Unit
°C
°C
V
Operation and storage temperature range
Junction temperature
Reverse voltage
-40 ... 100
125
3
VR
Forward current
IF
50
1
mA
A
Surge current
(tp ≤ 10 µs, D = 0)
IFSM
Power consumption
Ptot
140
450
160
mW
Thermal resistance junction - ambient
Thermal resistance junction - case
RthJA
RthJC
K / W
K / W
Characteristics (TA = 25 °C)
Parameter
Symbol
Values
Unit
Peak wavelength
(typ)
(typ)
λpeak
660
nm
(IF = 50 mA, tP = 20 ms)
Spectral bandwidth at 50% of Imax
(IF = 50 mA, tp = 20 ms)
∆λ
25
nm
Half angle
(typ)
(typ)
ϕ
± 50
°
Dimensions of active chip area
L x W
0.325 x 0.325
mm x
mm
Rise and fall time of Ie ( 10% and 90% of Ie max
)
(typ)
(typ)
tr, tf
C0
100
25
ns
(IF = 50 mA, RL = 50 Ω)
Capacitance
(VR = 0 V, f = 1 MHz)
pF
Forward voltage
(typ (max)) VF
IR
2 (≤ 2.8)
0.01 (≤ 10)
3
V
(IF = 50 mA, tP = 20 ms)
Reverse current
(VR = 3 V)
ꢀA
Total radiant flux
(IF=50 mA, tp=20 ms)
(typ)
(typ)
(typ)
(typ)
Φe
mW
% / K
mV / K
nm / K
Temperature coefficient of Ie or Φe
(IF = 50 mA, tp = 20 ms)
TCI
TCV
TCλ
-0.4
Temperature coefficient of VF
(IF = 50 mA, tp = 20 ms)
-3
Temperature coefficient of wavelength
(IF = 50 mA, tp = 20 ms)
0.16
2015-12-23
2
Version 1.3
SFH 4860
Grouping (TA = 25 °C)
Group
Min Radiant Intensity
IF = 50 mA, tp = 20 ms
Ie, min [mW / sr]
Typ Radiant Intensity
IF = 1 A, tp = 100 µs
Ie, typ [mW / sr]
15
SFH 4860
0.63
Note:
measured at a solid angle of Ω = 0.01 sr
Relative Spectral Emission 1) page 8
Radiant Intensity 1) page 8
Ie / Ie(50mA) = f(IF), single pulse, tp = 20 µs, TA =
25°C
Irel = f(λ), TA = 25°C
OHR01869
100
OHR01870
102
%
Ι rel
Ι e
80
Ι e 50 mA
101
100
10-1
10-2
60
40
20
0
600
650
700
nm
λ
750
100
101
102
mA
Ι F
103
2015-12-23
3
Version 1.3
SFH 4860
Max. Permissible Forward Current
IF, max = f(TC), RthJC = 160 K / W
Max. Permissible Forward Current
IF, max = f(TA), RthJA = 450 K / W
OHR00390
OHR00391
120
120
mA
Ι F mA
Ι F
100
100
80
60
40
20
0
80
60
40
20
0
0
20
40
60
80
100 ˚C 130
0
20
40
60
80
100 ˚C 130
TA
TA
Forward Current 1) page 8
IF = f(VF), single pulse, tp = 100 µs, TA= 25°C
Permissible Pulse Handling Capability
IF = f(tp), TA = 25 °C, duty cycle D = parameter
OHR01872
10 4
mA
OHR01871
103
t P
mA
Ι F
t P
T
Ι F
ΙF
D =
T
D =
10 3
0.005
0.01
0.02
0.05
102
101
100
0.1
0.2
10 2 0.5
DC
10 1
10 -5 10 -4 10 -3 10 -2 10 -1
s
t P
10 1
0
1
2
3
4
5
6
VF
V 7
2015-12-23
4
Version 1.3
SFH 4860
Radiation Characteristics 1) page 8
Irel = f(ϕ), TA= 25°C
40
30
20
10
0
OHR00389
1.0
50
0.8
0.6
0.4
60
70
0.2
0
80
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
Package Outline
Chip position
(2.7)
14.5
12.5
1.1
0.9
1.1
0.9
Cathode
4.05
3.45
5.5
5.2
Flat glass cap
ø2.54
GMO06983
Dimensions in mm (inch).
2015-12-23
5
Version 1.3
SFH 4860
Package
Metal Can (TO-18), solder tabs lead spacing 2.54 mm (1/10"), anode marking: projection at package
bottom
Approximate Weight:
25.0 mg
Recommended Solder Pad
Dimensions in mm.
Note:
pad 1: anode
2015-12-23
6
Version 1.3
SFH 4860
TTW Soldering
IEC-61760-1 TTW
OHA04645
300
˚C
10 s max., max. contact time 5 s per wave
T
Continuous line: typical process
Dotted line: process limits
250
235 ˚C - 260 ˚C
First wave
Second wave
∆T < 150 K
200
150
100
50
Cooling
Preheating
ca. 3.5 K/s typical
ca. 2 K/s
130 ˚C
120 ˚C
100 ˚C
ca. 5 K/s
Typical
0
0
20
40
60
80
100
120
140
160
180
200
220 s 240
t
Disclaimer
Language english will prevail in case of any discrepancies or deviations between the two language wordings.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances.
For information on the types in question please contact our Sales Organization.
If printed or downloaded, please find the latest version in the Internet.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any
costs incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose!
Critical components* may only be used in life-support devices** or systems with the express written approval of
OSRAM OS.
*) A critical component is a component used in a life-support device or system whose failure can reasonably be
expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that
device or system.
**) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or
maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be
endangered.
2015-12-23
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Version 1.3
SFH 4860
Glossary
1)
Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or
calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily
correspond to the actual parameters of each single product, which could differ from the typical data and calculated
correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data
will be changed without any further notice.
2015-12-23
8
Version 1.3
SFH 4860
Published by OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com © All Rights Reserved.
2015-12-23
9
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