SFH4510_02 [OSRAM]
GaAs Infrared Emitters (950 nm) in SMR㈢ Package; 砷化镓红外发射器在SMR㈢包( 950纳米)![SFH4510_02](http://pdffile.icpdf.com/pdf1/p00115/img/icpdf/SFH4510_630837_icpdf.jpg)
型号: | SFH4510_02 |
厂家: | ![]() |
描述: | GaAs Infrared Emitters (950 nm) in SMR㈢ Package |
文件: | 总7页 (文件大小:77K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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GaAs-IR-Lumineszenzdioden (950 nm) in SMR® Gehäuse
GaAs Infrared Emitters (950 nm) in SMR® Package
SFH 4510
SFH 4515
SFH 4510
SFH 4515
Wesentliche Merkmale
Features
• GaAs-LED mit sehr hohem Wirkungsgrad
• SMR® (Surface Mount Radial) Gehäuse
• Für Oberflächenmontage geeignet
• Gegurtet lieferbar
• Gehäusegleich mit Fotodiode SFH 2500/
SFH 2505
• Very highly efficient GaAs-LED
• SMR® (Surface Mount Radial) package
• Suitable for surface mounting (SMT)
• Available on tape and reel
• Same package as photodiode SFH 2500/
SFH 2505
• Hohe Zuverlässigkeit
• High reliability
• Gute spektrale Anpassung an
Si-Fotoempfänger
• Spectral match with silicon photodetectors
• UL-approval
• UL-Freigabe
Anwendungen
Applications
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern
• Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
• IR remote control of hi-fi and TV-sets, video
tape recorders, dimmers
• Remote control for steady and varying intensity
• Sensor technology
• Discrete interrupters
• Sensorik
• Discrete optocouplers
• Diskrete Lichtschranken
• Diskrete Optokoppler
Typ
Bestellnummer Gehäuse
Type
Ordering Code Package
SFH 4510
SFH 4515
Q62702-P1798
Q62702-P1821
5-mm-SMR®-Gehäuse (T 1 3/4), schwarzes Epoxy-
Gießharz, Anschlüsse (SFH 4510 gebogen, SFH 4515 gerade)
im 2.54-mm-Raster (1/10’’), Kathodenkennzeichnung: siehe
Maßzeichnung.
5 mm SMR® package (T 1 3/4), black-colored epoxy resin, solder
tabs (SFH 4510 bent, SFH 4515 straight) lead spacing 2.54 mm
(1/10’’), cathode marking: see package outline.
2002-01-24
1
SFH 4510, SFH 4515
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Top; Tstg
– 40 … + 100
°C
Operating and storage temperature range
Sperrspannung
Reverse voltage
VR
5
V
Durchlaßstrom
Forward current
IF (DC)
IFSM
100
3
mA
A
Stoßstrom, tp = 10 µs, D = 0
Surge current
Verlustleistung
Power dissipation
Ptot
150
300
mW
K/W
Wärmewiderstand Sperrschicht - Umgebung bei RthJA
Montage auf FR4 Platine, Padgröße je 20 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 20 mm2 each
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA
λpeak
950
nm
Spektrale Bandbreite bei 50% von Ιmax
Spectral bandwidth at 50% of Ιmax
IF = 100 mA
∆λ
55
nm
Abstrahlwinkel
Half angle
ϕ
± 14
Grad
deg.
Aktive Chipfläche
Active chip area
0.09
mm2
mm
µs
A
Abmessungen der aktiven Chipfläche
Dimension of the active chip area
L × B
L × W
0.3 × 0.3
0.5
Schaltzeiten, Ie von 10% auf 90% und von 90% auf tr, tf
10%, bei IF = 100 mA, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from 90%
to 10%, IF = 100 mA, RL = 50 Ω
2002-01-24
2
SFH 4510, SFH 4515
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Kapazität
Co
25
pF
Capacitance
VR = 0 V, f = 1 MHz
Durchlaßspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VF
VF
1.30 (≤ 1.5)
2.30 (≤ 2.8)
V
V
Sperrstrom,
Reverse current
VR = 5 V
IR
0.01 (≤ 1)
µA
Gesamtstrahlungsfluß,
Total radiant flux
Φe
22
mW
IF = 100 mA, tp = 20 ms
Temperaturkoeffizient von Ie bzw. Φe, IF = 100 mA TCI
Temperature coefficient of Ie or Φe, IF = 100 mA
– 0.5
– 2
%/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA
TCV
mV/K
nm/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA
TCλ
0.3
2002-01-24
3
SFH 4510, SFH 4515
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.001 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.001 sr
Bezeichnung
Parameter
Symbol
Werte
Values
Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie typ
Ie min
50
≥ 25
mW/sr
mW/sr
Strahlstärke
Ie typ
450
mW/sr
Radiant intensity
IF = 1 A, tp = 100 µs
2002-01-24
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SFH 4510, SFH 4515
Ιe
= f (IF)
Relative Spectral Emission
Irel = f (λ)
Radiant Intensity
Max. Permissible Forward Current
IF = f (TA)
Ιe 100 mA
Single pulse, tp = 20 µs
OHF01534
OHR01551
102
125
OHRD1938
100
%
A
mA
IF
Ι e
Ι e 100 mA
Ι rel
100
75
50
25
0
80
101
60
40
20
0
100
10-1
10-2
10-3
10-2
10-1
100
Ι F
A
101
880
920
960
1000
nm
λ
1060
0
10 20 30 40 50 60 70 80 ˚C 100
T
Forward Current
Permissible Pulse Handling
IF = f (VF), single pulse, tp = 20 µs
Capability IF = f (τ), TA = 25 °C,
duty cycle D = parameter
OHR01554
10 1
10 4
OHR00860
t p
mA
5
A
Ι F
Ι F
t p
T
Ι F
D
=
10 0
10 -1
10 -2
10 -3
D
0.005
0.01
=
T
0.02
0.05
10 3
5
0.1
0.2
0.5
DC
10 2
0
1
2
3
4
5
6
V
8
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2
t p
VF
Radiation Characteristics Ιrel = f (ϕ)
40
30
20
10
0
OHF00265
1.0
50
0.8
0.6
0.4
60
70
0.2
0
80
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2002-01-24
5
SFH 4510, SFH 4515
Maßzeichnung
Package Outlines
SFH 4510
Chip position
4.5 (0.177)
3.9 (0.154)
7.5 (0.295)
5.5 (0.217)
((3.2) (0.126))
2.8 (0.110)
2.05 (0.081)
1.95 (0.077)
R
((R2.8 (0.110))
2.4 (0.094)
((3.2) (0.126))
3.7 (0.146)
6.0 (0.236)
5.4 (0.213)
3.3 (0.130)
14.7 (0.579)
13.1 (0.516)
4.5 (0.177)
3.9 (0.154)
Cathode/
Collector
7.7 (0.303)
7.1 (0.280)
GEOY6968
SFH 4515
Chip position
4.5 (0.177)
3.9 (0.154)
((3.2) (0.126))
((R2.8 (0.110))
8.0 (0.315)
7.4 (0.291)
2.05 (0.081)
R
1.95 (0.077)
((3.2) (0.126))
15.5 (0.610)
14.7 (0.579)
6.0 (0.236)
5.4 (0.213)
4.5 (0.177)
3.9 (0.154)
Cathode/
Collector
7.7 (0.303)
7.1 (0.280)
GEOY6969
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
2002-01-24
6
SFH 4510, SFH 4515
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2002-01-24
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SFH4511
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
OSRAM
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