SFH9201-2/3 [OSRAM]
Reflexlichtschranke Reflective Interrupter; Reflexlichtschranke反光灭弧
| 型号： | SFH9201-2/3 |
| 厂家： | 
OSRAM GMBH |
| 描述： | Reflexlichtschranke Reflective Interrupter |
| 文件： | 总10页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Reflexlichtschranke
Reflective Interrupter
SFH 9201
Wesentliche Merkmale
Features
• Optimaler Arbeitsabstand 1 mm bis 5 mm
• IR-GaAs-Lumineszenzdiode in Kombination
mit einem Si-NPN-Fototransistor
• Optimal operating distance 1 mm to 5 mm
• IR-GaAs-emitter in combination with a Silicon
NPN phototransistor
• Tageslichtsperrfilter
• Daylight cut-off filter
• Geringe Sättigungsspannung
• Low saturation voltage
• Sender und Empfänger galvanisch getrennt
• Lötmethode: IR-Reflow Löten
• Vorbehandlung nach JEDEC Level 4
• Emitter and detector electrically isolated
• Soldering Methode: IR Reflow Soldering
• Preconditioning acc. to JEDEC Level 4
Anwendungen
Applications
• Positionsmelder
• Position reporting
• Endabschaltung
• End position switch
• Drehzahlüberwachung, -regelung
• Bewegungssensor
• Speed monitoring and regulating
• Motion transmitter
Typ
Type
Bestellnummer
Ordering Code
ICE [mA]
(IF = 10 mA, VCE = 5 V, d = 1 mm)
SFH 9201
Q62702-P5038
Q62702-P5056
Q62702-P5057
0.25 … 2.00
0.40 … 1.25
0.63 … 2.00
SFH 9201-2/3
SFH 9201-3/4
2004-09-23
1
SFH 9201
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Sender (GaAs-Diode)
Emitter (GaAs diode)
Sperrspannung
Reverse voltage
VR
IF
5
V
Vorwärtsgleichstrom
Forward current
50
80
mA
mW
Verlustleistung
Ptot
Power dissipation
Empfänger (Si-Fototransistor)
Detector (silicon phototransistor)
Dauer-Kollektor-Emitter-Sperrspannung
Continuous collector-emitter voltage
VCE
VCE
VEC
IC
16
30
7
V
Kollektor-Emitter-Sperrspannung, (t ≤ 2 min)
Collector-emitter voltage, (t ≤ 2 min)
Emitter-Kollektor-Sperrspannung
Emitter-collector voltage
Kollektorstrom
Collector current
10
100
mA
Verlustleistung
Ptot
mW
Total power dissipation
Reflexlichtschranke
Light Reflection Switch
Lagertemperatur
Storage temperature range
Tstg
TA
– 40 … + 100 °C
Umgebungstemperatur
– 40 … + 100
Ambient temperature range
Verlustleistung
Power dissipation
Ptot
ESD
150
2
mW
KV
Elektrostatische Entladung
Electrostatic discharge
Umweltbedingungen / Environment conditions
3 K3 acc. to EN 60721-3-3 (IEC 721-3-3)
2004-09-23
2
SFH 9201
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Sender (IR-GaAs-Diode)
Emitter (IR-GaAs diode)
Durchlaβspannung
Forward voltage
IF = 50 mA
VF
1.25 (≤ 1.65)
0.01 (≤ 1)
25
V
Sperrstrom
Reverse current
VR = 5 V
IR
µA
pF
K/W
Kapazität
Capacitance
VR = 0 V, f = 1 MHz
CO
Wärmewiderstand1)
RthJA
270
Thermal resistance1)
Empfänger (Si-Fototransistor)
Detector (silicon phototransistor)
Kapazität
Capacitance
CCE
ICEO
IP
10
pF
V
CE = 5 V, f = 1 MHz
Kollektor-Emitter-Reststrom
Collector-emitter leakage current
3 (≤ 200)
3.5
nA
V
CE = 20 V
Fotostrom (Fremdlichtempfindlichkeit)
Photocurrent (outside light density)
mA
K/W
V
CE = 5 V, EV = 1000 Lx
Wärmewiderstand1)
RthJA
270
Thermal resistance1)
2004-09-23
3
SFH 9201
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Reflexlichtschranke
Light Reflection Switch
Kollektor-Emitterstrom
Collector-emitter current
ICE min.
ICE typ.
0.25
0.70
mA
mA
Kodak neutral white test card, 90% Reflexion
IF = 10 mA; VCE = 5 V; d = 1 mm
Kollektor-Emitter-Sättigungsspannung
Collector-emitter-saturation voltage
Kodak neutral white test card, 90% Reflexion
IF = 10 mA; d = 1 mm; IC = 85 µA
VCE sat
0.15 (≤ 0.6)
V
1)
Montage auf PC-Board mit > 5 mm2 Padgröβe
1)
Mounting on pcb with > 5 mm2 pad size
d
Reflector
with 90% reflexion
(Kodak neutral white
test card)
OHM02257
2004-09-23
4
SFH 9201
Schaltzeiten (TA = 25 °C, VCC = 5 V, IC = 1 mA1), RL = 1 kΩ)
Switching Times
RL
VCC
Ι F
Ι C
Output
OHM02258
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Einschaltzeit
Turn-on time
tein
ton
65
50
55
50
µs
Anstiegzeit
Rise time
tr
µs
µs
µs
Ausschaltzeit
Turn-off time
taus
toff
Abfallzeit
Fall time
tf
1)
IC eingestellt über den Durchlaβstrom der Sendediode, den Reflexionsgrad und den Abstand des Reflektors vom
Bauteil (d)
1)
IC as a function of the forward current of the emitting diode, the degree of reflection and the distance between
reflector and component (d)
2004-09-23
5
SFH 9201
IC
ICmax
Collector Current --------- = f(d)
Permissible Power Dissipation for
Diode and Transistor Ptot = f (TA )
Switching Characteristics t = f (RL)
TA = 25 °C, IF = 10 mA
OHO00785
OHL00945
OHO02255
10 3
160
mW
100
Total power dissipation
Ι C
Ptot
Ι C max
t
%
Ι
µ
s
C = 100 µA
80
60
40
120
t on
Detector
100
t off
Emitter
80
10 2
t on
t off
60
40
20
0
Ι
C = 1 mA
20
Kodak neutral
white test card
Mirror
10 1
10 -1
0
0
20
40
60
80 ˚C 100
10 0
k
Ω
10 1
0
1
2
3
4 mm 5
TA
RL
d
Max. Permissible Forward Current
Transistor Capacitance (typ.)
Collector Current IC = f (IF), spacing
d to reflector = 1 mm, 90% reflection
IF = f (TA)
C
CE = f (VCE), TA = 25 °C, f = 1 MHz
OHO00374
OHL00986
OHO00783
50
120
3.0
mA
mA
IF
pF
Ι C
100
80
60
40
20
0
2.5
2.0
1.5
1.0
CCE
40
35
30
25
20
15
10
5
VCE = 5 V
0.5
0
0
10 -2
10 -1
10 0
10 1
VCE
V
10 2
0
4
8
12
16 mA 20
Ι F
0
20
40
60
80 ˚C 100
TA
Forward Voltage (typ.) of the
Diode VF = f (T)
Relative Spectral Emission of
Emitter (GaAs) Irel = f (λ) and
Detector (Si) Srel = f (λ)
Output Characteristics (typ.)
IC = f (VCE), spacing to reflector:
d = 1 mm, 90% reflection, TA = 25 °C
OHO00781
OHO02256
OHO00786
2.0
1.30
100
Ι F = 25 mA
Ι rel
V
VF
Ι C
mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Srel
%
1.25
80
Ι F = 20 mA
Ι
F = 20 mA
10 mA
1.20
1.15
1.10
1.05
60
40
20
0
Ι F = 15 mA
Ι F = 10 mA
5 mA
Detector
Ι
F = 5 mA
Emitter
900
1
0.1
100
101
V
-40 -20
0
20
40
60
C
100
700
800
1000 nm 1100
VCE
T
λ
2004-09-23
6
SFH 9201
Maßzeichnung
Package Outlines
6.2 (0.244)
5.8 (0.228)
0.2 M
A
4.2 (0.165)
3.8 (0.150)
B
3.4 (0.134)
3.0 (0.118)
A
Sender/Emitter
(0.4 (0.016) typ.)
6
5
4
1
2
3
Chip Positionen
Empfänger/Receiver
0.1 M
B
GPLY0504
Type
1
2
3
4
5
6
SFH 9201
Anode
–
Emitter
Collector
–
Cathode
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
2004-09-23
7
SFH 9201
Empfohlenes Lötpaddesign
Recommended Solder Pad
IR-Reflow Löten
IR REflow Soldering
1.2 (0.047)
Padgeometrie
für verbesserte
Wärmeableitung
Paddesign
for improved
Heat dissipation
3.9 (0.154)
Cu-Fläche >5 mm2
Cu-area >5 mm2
Lötstopplack
Solder resist
OHPY0030
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
2004-09-23
8
SFH 9201
Löthinweise
Soldering Conditions
Bauform
Type
Drypack
Level acc.
to
IPS-stand.
020
Tauch-, Schwalllötung
Dip, Wave Soldering
Reflowlötung
Reflow Soldering
Kolbenlötung
Iron Soldering
Peak Temp. Max. Time in Peak Temp. Max. Time
(Iron temp.)
(solderbath) Peak Zone
n. a.
(package
temp.)
in Peak
Zone
SFH 9201
4
–
245 °C
10 sec.
n.a.
Bitte Verarbeitungshinweise für SMT-Bauelemente beachten!
Please observe the handling guidelines for SMT devices!
IR-Reflow Lötprofil
(nach IPC 9501)
IR Reflow Soldering Profile (acc. to IPC 9501)
OHLY0597
300
C
250
200
150
100
50
T
240-245 C
10-40 s
183 C
120 to 180 s
ramp-down rate up to 6 K/s
defined for Preconditioning: up to 6 K/s
ramp-up rate up to 6 K/s
defined for Preconditioning: 2-3 K/s
0
0
50
100
150
200
s
2
t
2004-09-23
9
SFH 9201
Gurtung / Polarität und Lage
siehe Dokument: Short Form Katalog: Gurtung und
Verpackung - SMT-Bauelemente - Gehäuse:SMT RLS
Methode of Taping / Polarity and Orientation see document: Short Form Catalog: Tape and Reel -
SMT-Components - Package: SMT-RLS
Published by OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
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incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component used in a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2004-09-23
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