SPL-LL90-3 [OSRAM]
Hybrid Pulsed Laser Diode with Integrated Driver Stage 70 W Peak Power;
| 型号： | SPL-LL90-3 |
| 厂家： | 
OSRAM GMBH |
| 描述： | Hybrid Pulsed Laser Diode with Integrated Driver Stage 70 W Peak Power |
| 文件： | 总8页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2017-05-24
Hybrid Pulsed Laser Diode with Integrated Driver Stage 70 W Peak Power
Version 1.2
SPL LL90_3
Features:
•
•
•
•
•
•
Low cost, small size plastic package
Integrated FET and capacitors for pulse control
Strained InAIGaAs/GaAs QW-structures
High power large-optical-cavity laser structure
Nanostack laser technology including multiple epitaxially stacked emitters
The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification
for Automotive Grade Discrete Semiconductors.
High-speed operation (< 30 ns pulse width)
•
•
Low supply voltage (< 20 V)
Applications
•
•
•
•
Range finding
Security, surveillance
Illumination, ignition
Testing and measurement
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which
can be hazardous to the human eye. Products which incorporate these devices have to follow the safety
precautions given in IEC 60825-1 "Safety of laser products".
Ordering Information
Type:
Number of
emitters
Peak wavelength Peak output
power
Ordering Code
λpeak
905
Popt
70
SPL LL90_3
3
Q65110A1009
2017-05-24
1
Version 1.2
SPL LL90_3
Maximum Ratings (short time operation / kurzzeitiger Betrieb, TA = 25 °C)
Parameter
Symbol
Ppeak
VC
Values
80
Unit
W
Peak output power
Charge voltage
(VG = 15 V)
20
V
Gate voltage
VG
dc
Top
Tj
-20 ... 20
0.1
V
Duty cycle
%
Operating temperature
Junction temperature 1) page 7
Storage temperature range
-40 ... 100
105
°C
°C
°C
°C
Tstg
Ts
-40 ... 100
260
Soldering temperature
(tmax = 10 s)
Characteristics (TA = 25 °C)
Parameter
Symbol
Values
Unit
min typ max
Emission wavelength 2) page 7
Spectral width (FWHM) 2) page 7
Peak output power 2) page 7
λpeak
∆λ
Popt
UC, th
tP
895 905 915 nm
7
nm
W
V
60
4
70
4.5
40
10
45
80
5
Charge voltage at laser threshold
Pulse width (FWHM) 2) page 7 , 3) page 7
Rise time 2) page 7 , 3) page 7
37
7
43 ns
13 ns
50 ns
tr
Fall Time 2) page 7 , 3) page 7
tf
40
Jitter (regarding trigger signal and optical pulse)
Aperture size
tj
170 500 ps
w x h
200
µm x
µm
°
x 10
Beam divergence (FWHM) parallel to pn-junction
Θ||
Θ⊥
12
27
15
30
18
33
2) page 7
Beam divergence (FWHM) perpendicular to
pn-junction 2) page 7
°
Temperature coefficient of wavelength
Thermal resistance
∆λ / ∆T
Rth
0.3 0.33 nm / K
200
5
K / W
V
Switch on gate voltage
VG on
2017-05-24
2
Version 1.2
SPL LL90_3
Optical Output Power vs. Charge Voltage
Popt = f(VC), tp = 30 ns
Relative Spectral Emission
Irel = f(λ), Popt = 70 W, tp = 30 ns
OHL01910
OHL01909
100
90
W
80
1 kHz
P
Irel
opt
70
60
50
40
30
20
10
0
75
25 kHz
50
25
0
0
5
10
15
20 V 25
860
880
900
920 nm 940
VC
λ
Far-Field Distribution Parallel to pn-Junction
Far-Field Distribution Perpendicular to
pn-Junction
Irel = f(ΘII), Popt = 70 W, tp = 30 ns
Irel = f(Θ ), Popt = 70 W, tp = 30 ns
OHL01906
⊥
1.00
OHL01907
1.00
Irel
Irel
0.75
0.75
0.50
0.25
0
0.50
0.25
0
-40 -30 -20 -10
0
10 20 Deg 40
-40 -30 -20 -10
0
10 20 Deg 40
θ
θ
2017-05-24
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Version 1.2
SPL LL90_3
Optical Output Power vs. Charge Voltage
Popt = f(VC), tp = 30 ns, PRF = 1 kHz
Max. Charge Voltage vs. Ambient Temperature
VCmax = f(TA), tp = 30 ns, VC ≤ 19 V, chip temp. ≤
105 °C
OHL01908
90
OHL01904
W
80
20
TA
=
V
18
-40 ˚C
-20 ˚C
0 ˚C
20 ˚C
40 ˚C
60 ˚C
80 ˚C
100 ˚C
P
opt
70
60
50
40
30
20
10
0
V
C max 16
10 kHz
14
20 kHz
30 kHz
40 kHz
12
10
8
6
4
2
0
5
10
15
20 V 25
0
-40 -20
0
20 40 60 80 ˚C 120
VC
TA
Peak Output Power at Max. Charge Voltage vs.
Ambient Temperature
Popt = f(TA), tp = 30 ns
OHL01905
80
W
70
P
opt
60
1 kHz
10 kHz
50
20 kHz
30 kHz
40 kHz
40
30
20
10
0
-40 -20
0
20 40 60 80 ˚C 120
TA
2017-05-24
4
Version 1.2
SPL LL90_3
Package Outline
ref. to leadframe centerline
±0.2 (0.008)
2.4 (0.094)
±5˚
0˚
±0.2 (0.008)
±0.2 (0.008)
1.35 (0.053)
4.9 (0.193)
±0.3 (0.012)
1.05 (0.041)
R0.3 (0.012)
Laser Diode
±0.2 (0.008)
±0.1 (0.004)
5 (0.197)
1
2
3
±0.2 (0.008)
2.5 (0.098)
Surface
not flat
0.5 (0.020)
0 (0.000)
±0.1 (0.004)
spacing 1.27 (0.050)
±0.1 (0.004)
0 (0.000)
±0.1 (0.004)
0 (0.000)
±0.1 (0.004)
0 (0.000)
VC
2
1
FET
D
Trigger
VG
G
S
C
C
Laser diode
3 GND
±0.1 (0.004)
0.5 (0.020)
0.6 (0.024)
0.4 (0.016)
spacing 2.54 (0.100)
R0.25 (0.010)
GWOY7046
Dimensions in mm (inch).
2017-05-24
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Version 1.2
SPL LL90_3
Disclaimer
Language english will prevail in case of any discrepancies or deviations between the two language wordings.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances.
For information on the types in question please contact our Sales Organization.
If printed or downloaded, please find the latest version in the Internet.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any
costs incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose!
Critical components* may only be used in life-support devices** or systems with the express written approval of
OSRAM OS.
*) A critical component is a component used in a life-support device or system whose failure can reasonably be
expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that
device or system.
**) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or
maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be
endangered.
2017-05-24
6
Version 1.2
SPL LL90_3
Glossary
1)
Junction temperature: Limited due to plastic package, not due to laser chip.
2)
Standard operating conditions: > 50 ns pulse width, 1 kHz pulse repetition rate, 18.5 V charge voltage, 15 V
gate voltage and 25 °C ambient temperature. The laser is driven by the MOSFET driver Elantec EL7104C.
3)
Switching speed: Switching speed at gate depends on current and speed, charging the gate capacitance (typ.
300 pF) of the internal transistor. Reduced pulse widths, rise and fall times occur at trigger pulse widths < 50 ns.
This also reduces the optical peak power.
2017-05-24
7
Version 1.2
SPL LL90_3
Published by OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com © All Rights Reserved.
2017-05-24
8
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