SPLLL90 [OSRAM]

Hybrid Pulsed Laser Diode with Integrated Driver Stage 25 W Peak Power; 混合型脉冲激光二极管集成驱动级25瓦峰值功率


型号：	SPLLL90
厂家：	OSRAM GMBH
描述：	Hybrid Pulsed Laser Diode with Integrated Driver Stage 25 W Peak Power 混合型脉冲激光二极管集成驱动级25瓦峰值功率光电二极管激光二极管脉冲驱动
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中文：	中文翻译
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Hybride Impuls-Laserdiode mit integrierter Treiberstufe 25 W Spitzenleistung

Hybrid Pulsed Laser Diode with Integrated Driver Stage 25 W Peak Power

Lead (Pb) Free Product - RoHS Compliant

SPL LL90

Besondere Merkmale

Features

• Kleines kostengünstiges Plastik-Gehäuse

• Integriert sind ein FET und Kondensatoren zur

Impulsansteuerung

• InAlGaAs/GaAs kompressiv verspannte

Quantenfilmstruktur

• Low cost, small size plastic package

• Integrated FET and capacitors for pulse control

• Strained InAlGaAs/GaAs QW-structures

• High power large-optical-cavity laser structure

• Laser aperture 200 µm x 2 µm

• Hochleistungslaser mit „Large-Optical-Cavity“

(LOC) Struktur

• High-speed operation (< 30 ns pulse width)

• Low supply voltage (< 20 V)

• Laserapertur 200 µm x 2 µm

• Schneller Betrieb (< 30 ns Impulsbreite)

• Niedrige Versorgungsspannung (< 20 V)

Applications

• Range finding

• Security, surveillance

• Illumination, ignition

• Testing and measurement

Anwendungen

• Entfernungsmessung

• Sicherheit, Überwachung

• Beleuchtung, Zündung

• Test- und Messsysteme

Safety advices

Depending on the mode of operation, these

devices emit highly concentrated non visible

infrared light which can be hazardous to the

Sicherheitshinweise

Je nach Betriebsart emittieren diese Bauteile human eye. Products which incorporate these

hochkonzentrierte, nicht sichtbare Infrarot- devices have to follow the safety precautions

Strahlung, die gefährlich für das menschliche given in IEC 60825-1 “Safety of laser products”

Auge sein kann. Produkte, die diese Bauteile

enthalten, müssen gemäß den Sicherheits-

richtlinien der IEC-Norm 60825-1 behandelt

werden.

Typ

Type

Opt. Spitzenausgangsleistung Wellenlänge

Bestellnummer

Ordering Code

Opt. Peak Power

Wavelength

SPL LL90

2007-04-04

25 W

905 nm

Q62702P5367

SPL LL90

Grenzwerte (kurzzeitiger Betrieb) (T_A= 25 °C)

Maximum Ratings (short time operation)

Parameter

Symbol

Werte

Values

Einheit

Unit

min.

max.

Spitzenausgangsleistung

Peak output power

P_opt

V_C

–

Ladespannung (V_G= 15 V)

Charge voltage (V_G= 15 V)

Gate-Spannung

Gate voltage

V_G

– 20

–

+ 20

0.1

Tastverhältnis

Duty cycle

°C

d.c.

T_op

T_stg

T_s

Betriebstemperatur

Operating temperature

- 40

–

+ 85

+ 100

+ 260

Lagertemperatur

Storage temperature

Löttemperatur (t_max= 10 s)

Soldering temperature (t_max= 10 s)

2007-04-04

SPL LL90

Optische Kennwerte (T_A= 25 °C)

Optical Characteristics

Parameter

Symbol

Werte

Values

Einheit

Unit

min.

typ.

max.

Zentrale Emissionswellenlänge¹⁾

Emission wavelength¹⁾

Spektralbreite (Halbwertsbreite)¹⁾

Spectral width (FWHM)¹⁾

Spitzenausgangsleistung¹⁾

Peak output power¹⁾

895

905

915

Δλ

–

P_opt

U_{C, th}

1.2

1.5

2.0

Ladespannung an der Laserschwelle

Charge Voltage at laser threshold

Anstiegs- und Abfallzeit (10% … 90%)^{1), 2)}

Rise and fall time (10% … 90%)^{1), 2)}

t_r,

t_f

–

Austrittsöffnung

Aperture size

w × h

–

200 × 2

–

μm²

Strahldivergenz (Halbwertsbreite) parallel zum

pn-Übergang¹⁾

θ_||

Grad

deg.

Beam divergence (FWHM) parallel to pn junction¹⁾

Strahldivergenz (Halbwertsbreite) senkrecht zum θ_⊥

pn-Übergang¹⁾

Grad

deg.

Beam divergence (FWHM) perpendicular to

pn-junction¹⁾

Temperaturkoeffizient der Wellenlänge

Temperature coefficient of wavelength

∂λ / ∂T

–

0.30

200

4.0

0.32

–

nm/K

K/W

Thermischer Widerstand

Thermal resistance

R_th

Einschaltpunkt der Gate-Spannung

Switch on gate voltage

V_{G on}

–

Werte beziehen sich auf folgende Standardbetriebsbedingung: 30 ns Pulsbreite, 1 kHz Pulswiederholrate, 16 V

Ladespannung, 15 V Gate-Spannung und 25°C Umgebungstemperatur. Der Laser wird angesteuert mit dem

MOSFET-Treiber Elantec EL7104C.

Values refer to the following standard operating conditions: 30 ns pulse width, 1 kHz pulse repetition rate, 16 V

charge voltage, 15 V gate voltage and 25 °C ambient temperature. The laser is driven by the MOSFET driver Elantec

EL7104C.

Die Schaltgeschwindigkeit ist abhängig von Strom und Geschwindigkeit, mit der die Gate-Kapazität (typ. 300 pF)

des internen Transistors geladen wird. Geringere Anstiegs- und Abfallzeiten erhält man bei reduzierter optischer

Spitzenleistung (siehe Diagramme auf Seite 5)

Switching speed at gate depends on current and speed, charging the gate capacitance (typ. 300 pF) of the internal

transistor. Reduced rise and fall times occur at reduced optical peak power (see diagrams on page 5)

2007-04-04

SPL LL90

Optical output power P_optvs charge voltage V_c

(t_p= 30 ns)

Optical spectrum, relative intensity I_relvs.

wavelength λ (P_opt= 25 W, t_p= 30 ns)

OHL01910

OHL01939

100

opt

I_rel

860

880

900

920 nm 940

V_c

Far-field distribution parallel to junction

Far-field distribution perpendicular to

I_relvs. angle θ_||

junction I_relvs. angle θ_⊥

OHL01945

OHL01944

1.00

I_rel

0.75

0.50

0.25

0.75

0.50

0.25

-40 -30 -20 -10

10 20 Deg 40

-40 -30 -20 -10

10 20 Deg 40

2007-04-04

SPL LL90

Optical pulse form for variing trigger pulse

widths (MOSFET driver Elantec EL7104C)

Optical pulse width vs. trigger pulse width

(MOSFET driver Elantec EL7104C)

OHL01942

OHL01940

opt

Trigger Pulse

Width

4 ns

10 ns

15 ns

20 ns

30 ns

40 ns

80 ns

10 20 30 40 50 60 ns 80

Trigger Pulse Width

20 40 60 80 100 ns 140

Optical peak power, fall and rise time vs. pulse

width (MOSFET driver Elantec EL7104C)

Optical peak power vs. optical pulse energy

(MOSFET driver Elantec EL7104C)

OHL01943

^OHL0194140

opt

Peak Power

Fall Time

Rise Time

10 15 20 25 30 ns 40

0.2 0.4 0.6 0.8 1.0

Optical Pulse Energy

µJ 1.4

Pulse Width FWHM

2007-04-04

SPL LL90

Maßzeichnung

Package Outlines

±0.2 (0.008)

2.4 (0.094)

±0.2 (0.008)

4.9 (0.193)

±0.2 (0.008)

1.35 (0.053)

±0.3 (0.012)

1.05 (0.041)

R0.3 (0.012)

Laser Diode

±0.2 (0.008)

±0.1 (0.004)

5 (0.197)

±0.2 (0.008)

2.5 (0.098)

Surface

not flat

0 (0.000)

±0.1 (0.004)

0 (0.000)

±0.1 (0.004)

0 (0.000)

V_C

FET

Trigger

V_G

Laser diode

±0.1 (0.004)

0.5 (0.020)

0.6 (0.024)

0.4 (0.016)

GND

spacing 2.54 (0.100)

GWOY6124

R0.25 (0.010)

Maße in mm (inch) / Dimensions in mm (inch).

2007-04-04

SPL LL90

Published by

OSRAM Opto Semiconductors GmbH

Wernerwerkstrasse 2, D-93049 Regensburg

www.osram-os.com

The information describes the type of component and shall not be considered as assured characteristics.

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substances. For information on the types in question please contact our Sales Organization.

Packing

Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.

By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing

material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs

incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical

components ¹, may only be used in life-support devices or systems ²with the express written approval of OSRAM OS.

¹A critical component is a component usedin a life-support device or system whose failure can reasonably be expected

to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

²Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain

and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

2007-04-04

SPLLL90 [OSRAM]

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